Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs(100)-(110) facet structures

By the molecular-beam epitaxial (MBE) growth of GaAs on [001]-mesa stripes patterned on GaAs(100) substrates, (110) facets were formed on the mesa edges defining (100)-(110) facet structures. The surface diffusion length of Ga adatoms along the [010] direction on the mesa stripes was obtained for a variety of growth conditions by in-situ scanning microprobe reflection high-energy electron diffraction (μ-RHEED). Using these values and the corresponding growth rate on the GaAs(110) facets, the diffusion length on the (110) plane was estimated. We found that the Ga diffusion length on the (110) plane is longer than that on the (100) and (111)B planes. The long diffusion length on the (110) plane is discussed in terms of the particular surface reconstruction on this plane.     

GaAs initial growth on InAs(001) vicinal surfaces observed by scanning tunneling microscopy

GaAs initial growth on InAs surfaces misoriented by 2° toward the [110] and [1 0] directions was investigated by scanning tunneling microscopy (STM). In the STM images of both InAs vicinal surfaces after GaAs deposition, white lines running in the [1 0] direction, corresponding to the grown GaAs surface, were observed. Almost all of the lines were attached only to steps running in the [110] direction (B-type steps) on both InAs surfaces; that is, the lines were seldom attached to steps running in the [1 0] direction (A-type steps). These results indicate that the B-type steps are more favorable for the sticking of deposited Ga atoms than the A-type steps during GaAs initial growth on InAs vicinal surfaces.     

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

High quality GaAs layers have been grown by low pressure MOVPE on Ge(001) and Ge(001) 9° off oriented in [110] direction by using a thin low temperature (LT) GaAs layer. Investigations of the initial growth step were performed at different V/III ratios and temperatures. To show the good buffer layer quality solar cell structures were grown on off oriented n‐Ge(001) and n‐GaAs(001) substrates. The surface morphology was studied by atomic force microscopy which showed the step‐flow growth mode on 1.2 µm thick GaAs/Ge structures. The crystalline qualities of this structures and the smooth surface morphology were investigated by double crystal X‐ray diffraction (XRD) and atomic force microscopy (AFM). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

A systematic study of the metal-organic vapour-phase epitaxial growth of (GaIn)P and (AlIn)P layers deposited on GaAs substrates with (001) and (110) orientation is presented. Special attention has been paid to the growth on (001)-oriented wafers with different misorientations to the growth direction. The influence of the growth conditions on the properties of the epitaxial layers such as lattice mismatch, alloy composition, photoluminescence (PL) wavelength, FWHMs of PL peaks and atomic ordering is discussed. Layers with mirrorlike surfaces and various degrees of order could be deposited at growth temperatures T_g ranging from 595 °C to 750 °C for (GaIn)P and 720 °C to 800 °C for (AlIn)P. In addition to the influence of T_g on the Ga incorporation during the (GaIn)P growth we found the Ga distribution coefficient k_Ga to be affected by the misorientation of the substrates. k_Ga correlates presumably with the number of kinks and steps on the substrate surface. Transmission electron diffraction (TED) and PL investigations show that the degree of order — often described by the ordering paramter η — depends strongly on T_g the ordering is more pronounced when the layers are deposited on substrates misoriented towards the (1 11) lattice plane. Strong ordering has been observed for (GaIn)P samples grown at 680 °C on substrates 2° misoriented towards the [1 10] direction and at 650 °C on substrates 6° misoriented towards the same direction. For the (AlIn)P samples striking ordering has been found when they were grown at 720 °C.     

Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

For metalorganic chemical vapor deposition, a fast lateral growth rate is observed for the first time on (001) GaAs having round mesas. The lateral growth rate is greater than the vertical growth rate by a factor of 3–5. The lateral growth rates have anisotropy with respect to the crystallographic directions on the (001) surfaces. The fastest growth direction is the [110] and the slowest one is the [ 10]. The [110] and [ 10] growth rates were found to be strongly dependent on growth conditions, though the vertical one is independent. The [110] growth rate decreases with decreasing As pressure, while the [ 10] remains constant. As growth temperature increases, both the [110] and the [ 10] growth rates decrease. A simple model for the lateral growth mechanism is proposed from the consideration of atomic arrangements and the number of dangling bonds at [110] and [ 10] step sites. According to the model, the lateral growth rate is proportional to the number of bonds available for binding Ga atoms at step sites. The model can explain well the anisotropy in the lateral growth rate and its dependence on the growth conditions.     

Unidirectional growth of α‐NiSO4·6H2O crystal by Sankaranarayanan–Ramasamy (SR) method

Large cylindrical [001] direction α‐nickel sulphate hexahydrate crystal with 20 mm diameter and 140 mm length was grown from an aqueous solution by uniaxially solution‐crystallization method of Sankaranarayanan–Ramasamy (SR). The grown crystal was examined by X‐ray diffraction, UV‐Vis‐NIR spectroscopy and TGA/DTA analysis methods.     

Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy

The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5–6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures.     

Solvothermal production of CdS nanorods using polyvinylpyrrolidone as a template

CdS nanorods were solvothermally produced using Cd(NO₃)₂ and S powder in ethylenediamine containing different amounts of polyvinylpyrrolidone (PVP). The phase with hexagonal structure was detected using X‐ray diffraction (XRD) and selected area electron diffraction (SAED). Their SAED patterns were in accordance with those of the simulations. Scanning and transmission electron microscopies (SEM and TEM) revealed the presence of CdS nanorods with their lengths influenced by different amounts of PVP. The nanorods were also characterized using high resolution TEM (HRTEM). They grew in the [001] direction normal to the (002) parallel crystallographic planes composing the nanorods. Raman spectra showed the 1LO (first harmonic) and 2LO (second harmonic) modes at the same wavenumbers although the products were produced under different conditions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of substrate misorientation on triple-period ordering in AlInAs

Substrate misorientation effects on triple-period (TP) ordering in Al_0.48In_0.52As were studied. When AlInAs was grown on a (001) InP substrate misoriented by 4° in the [ 1]A direction, TP-type ordering formed more strongly in the [ 1]A direction than in the [111]A direction. This asymmetric formation of TP-type ordering demonstrates that the step-arrays descending in the [ 0] direction play an important role in TP-type ordering formation in the [ 1]A direction. When AlInAs was grown at a higher temperature on a (001) InP substrate misoriented by 4° in the [ 11]B direction, CuPt-type ordering was formed more strongly in the [ 11]B than in the [1 1]B direction. The importance of the [ 10] step in CuPt-type ordering, which is well established in GaInP systems, was thus reconfirmed in this study on AlInAs.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temperature up to 775 °C. The higher temperatures bring out relaxation mechanisms; interdiffusion and favored migration. The defect structure and the defects which are observed with the increasing annealing temperature were analyzed. Firstly, the in‐plane and out‐of‐plane strains after the annealing of sample were found. Secondly, the structural defect properties such as the parallel X‐ray strain, perpendicular X‐ray strain, misfit, degree of relaxation, x composition, tilt angles and dislocation that are obtained from X‐ray diffraction (XRD) analysis were carried out at every temperature. As a result, we observed that the asymmetric peaks especially in asymmetric (224) plane was affected more than symmetric and asymmetric planes with lower polar or inclination angles due to c‐direction at low temperature. These structural properties exhibit different unfavorable behaviors for every reflection direction at the increasing temperatures. The reason is the relaxation which is caused by spatially inhomogeneous strain distribution with the increasing annealing temperature. In the InGaAs superlattice samples, this process enhances preferential migration of In atoms along the growth direction. Further increase in the annealing temperature leads to the deterioration of the abrupt interfaces in the superlattice and degradation in its structural properties. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Compositional dependence of morphology and lattice parameters during growth of K1‐x(NH4)xH2PO4 mixed crystals

Mixed crystals of ammonium dihydrogen phosphate and potassium dihydrogen phosphate K_1‐x(NH₄)_x H₂PO₄ were grown from aqueous solutions with x = 0.06, 0.09, 0.15, 0.32, 0.42, 0.51, 0.63, 0.70, 0.76, 0.78, 0.84, 0.88, 0.89 and 0.91. The crystal composition that differs from solution was estimated by X‐ray method. Morphology of the crystals changes from tetragonal prism to needles when the incorporation of either of the two components into the other; which also affects the growth rate along the prominent growth directions significantly. Growth along the [001] decreases initially with composition and reached the maximum when x = 0.5; whereas growth along the [100] always showed a decreasing trend with composition and attained a minimum value when x = 0.5. Crystal length along the [001] and [100] and aspect ratio are also compositional dependent. Unit cell parameters determined by X‐ray powder and single crystal analyses revealed that the ‘a ’ parameter shows only a small and linear variation but the ‘c ’ parameter changes significantly with ADP incorporation because of the difference in the effective ionic radius of K⁺ and NH₄⁺ ions and also the possibility of NH₄⁺ ion to form two different kinds of hydrogen bonds in the system. The existence of a pseudo‐cubic cell at the mixing composition x = 0.78 was also revealed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Morphology‐photocatalytic properties‐growth mechanism for ZnO nanostructures via microwave‐assisted hydrothermal synthesis

ZnO nanostructures with various morphologies including rod‐like, sheet‐like, needle‐like and flower‐like structures were successfully synthesized via a fast and facile microwave‐assisted hydrothermal process. Reaction temperature, reaction time and the addition of NaOH were adjusted to obtain ZnO with different morphologies. Scanning electron microscopy(SEM), transmission electron microscope(TEM), X‐ray diffraction (XRD) and ultraviolet spectrophotometer (UV) were used to observe the morphology, crystal structure, ultraviolet absorption and photocatalytic activity of the obtained ZnO. The results indicated that growth rate of ZnO nanostructure along [001] direction was more sensitive to temperature compared with those along [101] and [100] directions. The competition between anionic surfactant and OH⁻ played an important role in the formation of ZnO with various morphologies. Flower‐like ZnO had better ultraviolet absorption property and excellent photocatalytic activity than ZnO in the other morphologies. On the basis of the above results, a possible growth mechanism for the formation of ZnO nanostructures with different morphologies was described.     

Atomic ordering in GaAsSb (0 0 1) grown by metalorganic vapor phase epitaxy

Epitaxial GaAsSb (0 0 1) semiconductor alloys grown by metalorganic vapor phase epitaxy exhibit several spontaneously ordered structures. A superlattice structure with three-fold ordering in the [1 1 0] direction has been previously observed by different groups. CuAu structures with (1 0 0) and (0 1 0) ordering planes have also been reported. The physical origin of CuAu ordering in III–V semiconductors has not yet been explained. In this work we report the effect of growth conditions on CuAu ordering in GaAsSb, including miscut from (0 0 1), growth rate, bismuth surfactant concentration, and growth temperature. These data point to a surface kinetic mechanism not based on dimer strain, but possibly due to one-dimensional ordering at step edges.     

Synthesis and X‐ray structure of two conformational isomers of [Zn(medpt)(SCN)2], medpt = bis (3 – aminopropyl)methylamine

Two conformational isomers of [Zn (medpt)(NCS)₂], medpt=bis(3‐aminopropyl) methylamine, (1) and (2) have been synthesised and the crystal structures are determined using single crystal X‐ray diffraction. The structures of the complexes have been solved by Patterson method and refined by full‐matrix least‐ squares techniques to R1 = 0.0524 for (1) and R1 = 0.0506 for (2), respectively. The geometry around the Zn(II) centre in both isomers is distorted trigonal bipyramidal. The two pendent thiocyanate moieties in (1), with Zn–N–C angles 167.9(4)–173.9(4)º, coordinate the mental centre almost linearly while the corresponding coordinations in (2) are significantly bent [Zn–N–C angles 150.8(3)–153.1(2)°]. Intermolecular N–H…S hydrogen bonds stabilise the crystal packing in the complexes forming infinite chains parallel to the [100] direction. The combinations of molecular chains generate three/two dimensional supramolecular framework in complexes (1) and (2). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Selective area growth of GaAs using a Ga beam with a step-function lateral intensity profile

Selective area growth of GaAs has been carried out in order to investigate the surface diffusion of Ga atoms using molecular beam epitaxy (MBE) with the aid of a Ga beam with a lateral step-function intensity profile. This step-function profile was obtained using a closely fitted GaAs shadow mask. When the mask edge was parallel to [01 ], a (311)A facet was typically observed near the edge of the Ga beam, while in the case of the mask edge parallel to [011], a (111)B facet was formed. MBE growth simulation based on the diffusion model was carried out in order to understand the mechanism of this selective area growth. The calculated results were in good agreement with the experimental results, and the diffusion lengths of Ga atoms were determined to be 0.10 μm along [011] direction on the (100) GaAs surface, 0.37 μm along [233] direction on the (311)A GaAs surface and 0.17 μm along [21 ] direction on the (111)B GaAs surface during MBE growth. These diffusion lengths seem to be smaller than those previously observed, which is probably due to a large V/III ratio in the region of the substrate close to the mask edge.     

Influence of substrate temperature on nitridation of (0 0 1) GaAs using RF-radical source

The mechanism of nitridation of (0 0 1) GaAs surface using RF-radical source was systematically studied with changing substrate temperature, nitridation time and supplying As molecular beam. It was found from atomic forth microscopy (AFM) measurements that supplying As is very important to suppress the re-evaporation of As atoms and to keep the surface smooth. Reflection high-energy electron diffraction (RHEED) measurements shows that surface lattice constant (SLC) of GaAs of 0.565 nm decreases with increasing the substrate temperature and that it finally relaxes to the value of c-GaN of 0.452 nm, at 570 °C in both [1 1 0] and [1¯ 1 0] directions without concerning with the supply of As molecular beam. But, in the medium temperature range (between 350 and 520 °C), SLC of [1 1 0] direction was smaller than that of [1¯ 1 0] direction. This suggests a relation between the surface structure and the relaxing mechanism of the lattice. The valence band discontinuity between the nitridated layer and the GaAs layer was estimated by using X-ray photoemission spectroscopy (XPS). It was between 1.7 and 2.0 eV, which coincides well with the reported value of c-GaN of 1.84 eV. This suggests that the fabricated GaN layer was in cubic structure.     

Defect Structure of Strained Heteroepitaxial In(1—x)Al(x)P Layers Deposited by MOVPE on (001) GaAs Substrates

Weak-beam, large angle convergent beam electron diffraction and high resolution transmission electron microscope experiments have revealed, that after strain relaxation due to plastic deformation dislocation networks can be observed in In_(1—x)Al_(x)P heteroepitaxial layers grown on (001) GaAs substrates under compressive stress. The 60° slip dislocations are mostly dissociated into partials of Shockley type whereas in the particular case of layers grown under tension twins are predominantly formed by successive nucleation and slip of 90° Shockley partials on adjacent {111} glide planes lying inclined to the (001) surface. When a few 90° Shockley partials pile up during extension of twins, then planar incoherent twin boundaries with {112} coincidence planes have been formed during strain relaxation. Due to the space group symmetry ((InAl)P belongs to the space group F4-3m) there is a striking asymmetry in defect formation, i.e. defect nucleation and slip on the planes (111) and (1-1-1) slip of the [1-10] zone are preferred to nucleation and slip on the {111} planes of the [110] zone. Apparently, the occupacy of the atomic sites in the dislocation core with either group-III or group-V atoms is responsible for this behaviour. The nature of the defects implies that their spontaneous nucleation should have taken place at the growing surface. Under tensile strain the 90° Shockley partial is nucleated first and the 30° one trails. Under compressive strain this sequence is reversed. It is evident, for dissociated dislocations lying at the interface always the 30° partial, i.e. the partial with less mobility or with higher friction force, is detained near or directly in the interface. Thus, in layers grown under tension the stacking fault associated with the dissociated 60° dislocation lies inside the GaAs substrate. For layers grown under compression it is located inside the ternary layer.     

Spatially resolved X‐ray diffraction as a tool for strain analysis in laterally modulated epitaxial structures

Spatially resolved X‐ray diffraction (SRXRD) is applied for micro‐imaging of strain in laterally modulated epitaxial structures. In GaAs layers grown by liquid phase epitaxial lateral overgrowth (ELO) on SiO₂‐masked GaAs substrates a downward tilt of ELO wings caused by their interaction with the mask is observed. The distribution of the tilt magnitude across the wings width is determined with μm‐scale spatial resolution. This allows measuring of the shape of the lattice planes in individual ELO stripes. If a large area of the sample is studied the X‐ray imaging provides precise information on the tilt of an individual wing and its distribution. In heteroepitaxial GaSb/GaAs ELO layers local mosaicity in the wing area is found. By the SRXRD the size of microblocks and their relative misorientation were analyzed. Finally, the SRXRD technique was applied to study distribution of localized strain in AlGaN epilayers grown by MOVPE on bulk GaN substrates with AlN mask. X‐ray mapping proves that by mask patterning strain in AlGaN layer can be easily engineered, which opens a way to produce thicker, crack‐free AlGaN layers with a higher Al content needed in GaN‐based laser diodes. All these examples show that high spatial and angular resolutions offered by SRXRD makes the technique a powerful tool to study local lattice distortions in semiconductor microstructures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

InxGa1−xAs/GaAs quantum wire structures grown on GaAs (100) patterned substrates with [001] ridges

In_xGa_1−xAs/GaAs (x = 0.12-0.23) quantum well (QW) structures were grown by molecular beam epitaxy (MBE) on [001] ridges with various widths (1.1-12 μm) of patterned GaAs (100) substrate. The smallest lateral width of the InGaAs/GaAs quantum wire (QWR) structures was estimated to be about 0.1 μm by high-resolution scanning electron microscope (SEM). The In contents of the grown InGaAs/GaAs QWs on the ridges were studied as a function of ridge top width (ridge width of the MBE grown layer) by cathodoluminescence (CL) measurements at 78 K. Compared to the InGaAs QW grown on a flat substrate, the In content of the InGaAs/GaAs QW on the ridge increases from 0.22 to 0.23 when the ridge top width decreases to about 2.9 μm, but it decreases steeply from 0.23 down to 0.12 with a further decrease of the ridge width from 2.9 to 0.05 μm. A simulation of MBE growth of InGaAs on the [001] ridges shows that this reduced In content for narrow ridges is due to a large migration of Ga atoms to the (100) ridge top region from {110} side facets.