一种测试微通道板增益均匀性的新方法

本文介绍一种测试微通道板增益均匀性的新方法,从测试原理到测试方法均给予较为详细的说明,并与目前国内采用的测量方法进行了比较。一、引言微通道板的增益均匀性,是指通道板在线性工作时增益空间分布的均匀情况。其均匀性主要与微通道板的工艺结构有关,也与材料、工作状态及清洗所造成的通道表面状态有关。它包含的主要内容为:(1)复丝与复丝之间的增益偏差;(2)复丝边界相     

微通道板及其主要特征性能

简要描述了微通道板的工作原理，介绍了微通道板的主要特征性能及其工作参数，包括厚度、开口面积比、增益及增益均匀性、动态范围、噪声、工作寿命和空间分辨率等，阐述了这些特征性能和参数彼此间的相互关联和相互制约的特殊关系。在此基础上，对影响和制约微通道板名个特征性能和参数的特殊关系及因素作了详细分析。这项工作对进一步认识和协调处理微通道板的各种特征性能和参数有着非常积极的作用。     

微通道板增益对光子计数探测器成像性能影响

微通道板作为二维位置灵敏阳极光子计数探测器中的电子倍增器件,其增益特性直接影响探测器的成像性能。搭建了系统测试平台,测量了微通道板的增益随电压变化曲线,并获得了3块微通道板叠加后的脉冲高度分布曲线。根据测试结果以及脉冲高度分布曲线的能量分辨率与探测器增益的均匀性之间的物理关系,选择合适电压值和增益对探测器的性能进行优化,探测器分辨率由3.56 lp/mm 提高到4.49 lp/mm ,获得了清晰图像,为探测器的研制提供了技术支持。     

大面积高深宽比硅微通道板阵列制作

利用光辅助电化学刻蚀方法,在厚度为425μm的5英寸硅片上,制作成深宽比达50以上的微通道板阵列结构.理论分析了影响微孔阵列形貌形成的关键因素,并结合实验条件,通过调整刻蚀电压值和根据莱曼模型修正实验电流值得到理想的孔壁形貌.结果表明,相比于目前在硅基上制作高深宽微结构的几种技术,光辅助电化学刻蚀方法能够实现孔壁光滑、面积大和深宽比高的微通道板阵列结构的低成本制作.     

大长径比皮料玻璃管加工工艺研究及应用

为满足高增益、低噪声微通道板要求的大长径比皮料玻璃管,采用精密机械整形冷加工工艺提高皮料管的几何均匀性,实现微通道板的性能提升。通过改善机床加工误差、对刀误差以及设计合适的机动夹紧机构可有效控制皮料管内圆精磨加工精度。对磨头转速、背吃刀量、轴向进刀速度及金刚砂磨头粒度4个水平因子开展L16正交试验,得出背吃刀量是影响皮料管内圆精磨加工表面质量的主要因素。选择合适的抛光工艺及工装夹具,最终将皮料管的尺寸变化量控制在1%以内,表面粗糙度Ra值有效控制在0.02 μm。通过Φ25 /6型微通道板制板试验,结果表明:减小皮料管的几何尺寸偏差在一定程度上提高了微通道板阵列一致性、开口面积比一致性,以及增益均匀性,对制造高性能微通道板有较好的借鉴作用。     

两种玻璃微通道阵列的制作技术及比较

微孔玻璃阵列是采用原子层沉积技术制作微通道板的基底板,其微孔阵列的分布均匀性以及每个通道内壁的光滑程度,对其后续制作合格微通道板至关重要。分别采用空芯工艺和实芯腐蚀工艺来制作上述基底板,分析了两种技术的优缺点,阐述了两种方法中的关键技术,并对原子沉积技术制作的微通道板与常规工艺制作的微通道板进行了性能比较,前者的信噪比优于后者。     

电子清刷对微通道板增益及输出信噪比的影响

电子清刷是微通道板生产流程中常用的除气方法,会引起微通道板其他性能参量的变化.为研究电子清刷对微通道板输出信噪比及增益的影响,根据信噪比及增益的定义讨论了微通道板性能参量的测试方法,研制了微通道板参量测试系统.应用微通道板参量测试系统对微通道板进行了电子清刷处理,测试清刷过程中不同阶段微通道板的信噪比及增益变化.实验表明:微通道板增益随清刷时间增加而降低,同时增益稳定性提高;电子清刷过程中微通道板的输出信号及噪音的变化率与微通道板增益的变化率基本相同,输出信噪比基本不变.增益变化是影响清刷过程中信号及噪音变化的主要因素,并且电子清刷对微通道板输出信噪比影响较小.     

含负折射率介质的一维光子晶体构成的相干热辐射源的辐射特性及控制

电子清刷是微通道板生产流程中常用的除气方法,会引起微通道板其他性能参量的变化.为研究电子清刷对微通道板输出信噪比及增益的影响,根据信噪比及增益的定义讨论了微通道板性能参量的测试方法,研制了微通道板参量测试系统.应用微通道板参量测试系统对微通道板进行了电子清刷处理,测试清刷过程中不同阶段微通道板的信噪比及增益变化.实验表明:微通道板增益随清刷时间增加而降低,同时增益稳定性提高;电子清刷过程中微通道板的输出信号及噪音的变化率与微通道板增益的变化率基本相同,输出信噪比基本不变.增益变化是影响清刷过程中信号及噪音变化的主要因素,并且电子清刷对微通道板输出信噪比影响较小.     

微通道板分辨力提高研究

在微通道板输出端镀制一层逸出功更高的金属膜以覆盖原有的镍铬电极,从而减小微通道板输出电子的动能以及在荧光屏上的弥散,提高微通道板的分辨力。实验结果表明,在微通道板的输出端镀制一层20nm厚的银层(逸出功为4.3eV)后,微光像增强器的分辨力从60lp/mm提高到64lp/mm,提高了6.6%;而镀制一层20nm厚的铂层(逸出功为6.4eV)后,超二代像增强器的分辨力从60lp/mm提高到68lp/mm,提高13%。在分辨力提高的同时,微通道板的增益会下降,镀银和镀铂后的微通道板,增益分别下降到原有值的74%和33%。金属膜的逸出功越高,分辨力提高的百分比越高,增益下降的百分比也越高。所以采用该方法来提高微通道板分辨力时,需要采用高增益的微通道板,从而使微通道板的增益下降以后仍能满足使用要求。     

紫外单光子成像系统增益特性研究

介绍了基于微通道板和楔条形阳极的紫外单光子成像系统的组成和工作原理.利用该系统分别研究了两块和三块微通道板在不同电压下的暗计数特性.实验和拟合结果表明微通道板的暗计数脉冲幅度呈负指数型分布,暗计数率随电压升高而增大.通过测试不同电压下的脉冲幅度分布曲线,发现微通道板增益在较高电压下更加均匀.研究了两块微通道板情况下,微通道板电压和间距对系统分辨率的影响.结果表明,系统分辨率随微通道板电压增加而提高;另外,适当增加微通道板间距也可以提高系统分辨率. 关键词： 单光子计数成像 微通道板 楔条形阳极 分辨率     

半导体玻璃微通道板的研制

介绍了半导体玻璃微通道板的主要性能，并与传统铅硅酸盐玻璃的相关性能进行了比较。阐述了半导体玻璃的研制工艺，研究了利用半导体玻璃材料制备微通道板的工艺途径，开发了靠玻璃本身体电导性质而无需氢还原工艺的微通道板，即半导体玻璃微通道板。研制出孔径为20μm、外径为12mm的半导体玻璃微通道板，实验利用紫外光电法测试了微通道板的增益、闪烁噪声和成像性能。结果表明新型微通道板具有明显的电子增益和低的闪烁噪声，并且通道表面稳定；利用磷硅酸盐玻璃材料可以实现体导电微通道板的制备。     

用气熔压工艺改善6μmMCP的空间结构和视场清晰度

高分辨率微光像增强器对微通道板(MCP)的孔径、空间结构和视场清晰度有着极为严格的技术要求。我们在引进的气熔压设备上，通过对压力、温度、保温保压时间等相互制约的工艺参数进行大量实验，已探索出孔径为6μm、孔间距为8μm的MCP的最佳工艺，即第一平台温度为500℃左右、熔压温度为560～590℃、压力为0.5～0.9Mpa，保温保压时间为60min左右。在光学显微镜和扫描电子显微镜下观察我们制作的MCP，发现复丝排列规整、边界相邻的两排单丝变形较小且排列有序、复丝顶角无畸变(即无扭曲、梅花丝、孔洞、错位)。与Photonis公司同种型号的MCP相比，我们制作的MCP的梅花丝少1／3左右。在标准输入下，我们的MCP增益比较高，增益均匀性有所改善，固定图像噪声在0～1级，视场清晰度得到了较大程度的提高。     

Casting mold patterning for lateral capillary force migration on PDMS microchannel

The casting molds including various shapes within axial and lateral resolution (110 μm and 5 μm) could be precisely fabricated and were suitable for the fabrication of PDMS microchannel possessing the larger inner volume for the purpose of the rapid capillary force migration. The tight bonding between PDMS mold and SiO₂/Si surface not only was governed by the flexibility and the degree of tilted angle (TA) of PDMS microchannel which shows the minimum value at the 0.2 weight ratio (W_r) of curing agent but also efficiently generates the capillary migration.     

Optical substrate thickness measurement system using hybrid fiber-freespace optics and selective wavelength interferometry

Proposed and demonstrated is a simple few components non-contact thickness measurement system for optical quality semi-transparent samples such as Silicon (Si) and 6H Silicon Carbide (SiC) optical chips used for designing sensors. The instrument exploits a hybrid fiber-freespace optical design that enables self-calibrating measurements via the use of confocal imaging via single mode fiber-optics and a self-imaging type optical fiber collimating lens. Data acquisition for fault-tolerant measurements is accomplished via a sufficiently broadband optical source and a tunable laser and relevant wavelength discriminating optics. Accurate sample thickness processing is achieved using the known material dispersion data for the sample and the few (e.g., 5) accurately measured optical power null wavelengths produced via the sample etalon effect. Thicknesses of 281.1 μm and 296 μm are measured for given SiC and Si optical chips, respectively.     

Silicon nanotips formed by self-assembled Au nanoparticle mask

The Au nanoparticle monolayer is formed by self-assembly technology on the Si substrates terminated with different functional groups. Silicon nanotips were fabricated by a self-assembled gold colloidal particle monolayer as an etch mask. The silicon nanotips with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The Si nanotips on the surface of the 3-aminopropyltrimethoxysilane (APTMS)-treated Si substrate are less-ordered array and uniformity than 3-mercaptopropyltrimethoxysilane (MPTMS)-treated Si substrate at the same etching conditions. The ordered array and uniformity of Si nanotips on the APTMS-modified Si substrate was improved through heat-treatment. This result is implied the different functional groups on the Si surfaces could affect the formation of the Si nanostructures during RIE process. The uniformly nanotip pattern with height of >20 nm is obtained on the etched nanoparticle-coated Si substrate. This method can be applied to patterning a wide variety of thin film materials into tip arrays.     

The plasma characteristics and film formation generated by theelectron cyclotron resonance mechanism

Silicon nitride thin film (SiN_x) is deposited onto the 3 inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from N₂-SiH₄ electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determined by optical emission spectroscopy. From the comparison of the uniformities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is related to that of radical density rather than plasma density. The dependence of the uniformity film thickness on the waveguide mode was also examined     

掺铒硅基材料发光的新途径

关键词：     

High efficiency antireflection coating in MWIR region (3.6–4.9 μm) simultaneously effective for Germanium and Silicon optics

Antireflection coatings have critical importance in thermal imaging system working in MWIR region (3–5 μm) since optics of high refractive index materials are used. Germanium (Ge) and Silicon (Si) optics are used extensively in the MWIR thermal systems. In this paper a study has been carried out on the design and fabrication of multi-substrate antireflection coating effective for Germanium and Silicon optics in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because detector system used in MWIR region has a band selection filter effective in the same wavelength region and atmospheric transmission window in MWIR region is effective in 3–5 μm spectral band. Comprehensive search method was used to design the multilayer stack on the substrate. The coating materials used in the design were Germanium (Ge), Hafnium oxide (HfO₂) and Y-Ba-Fluoride (IR-F625). The fabrication of coating was made in a coating plant fitted with Cryo pump system and residual gas analyzer (RGA). The evaporation was carried out at high vacuum (2–6 × 10^?6 mbar) with the help of electron beam gun system and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 98.5% average transmission in 3.6–4.9 μm band for Germanium and Silicon optics. This work will be helpful in reducing the plant operation time, material and power consumption, as two different kinds of optics are simultaneously coated in a single coating cycle.     

直接液体冷却薄片激光器中抽运光均匀性对光束波前畸变的影响

近年来,直接液体冷却薄片激光器因其体积功率比小,热管理能力强等优势而成为研究热点.本文建立了一套直接液体冷却薄片激光器波前畸变的分析方法.应用该方法研究了直接液体冷却薄片激光器中抽运光均匀性对光束波前畸变的影响.计算分析了均匀性为92%, 80%和70%,且总的抽运功率不变时,激光器高阶像差分布情况.随着均匀性逐渐减弱,激光器中高阶像差逐渐增强,低阶像差量基本保持不变.实验中,设计加入波导和未加入波导结构,构建了均匀性为92%和70%的抽运光分布,分别测量了两种情况下的波前抖动情况以及波前畸变分布,抽运功率为5 k W时,测量获得了整个增益模块的光程差高阶分量(OPD_H),其畸变量均方根(RMS)值为0.66μm和0.79μm,实验结果和理论分析结果基本趋势一致.