Effect of temperature on the current–voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors

Transport of electrons within a quantum cascade photodetector structure takes place with the help of the scattering of electrons by phonons. By calculating scattering rates of the electrons mediated by longitudinal optical phonons (the dominant scattering mechanism), current–voltage characteristic of a quantum cascade photodetector is calculated. The results indicate that with the increase of bias voltage dark current increases rapidly, then the increase becomes slow at higher voltages, whilst photocurrent remains approximately constant with only slight variations in its magnitude. With the increase of temperature from 80 K to 160 K dark current increases by about two orders of magnitude while photocurrent varies slightly, so that at the illuminating power of 1 mW/m² photocurrent density increases in mean from 1.10×10⁻⁹ A/cm² at 80 K to 1.14×10⁻⁹ A/cm² at 160 K and then decreases to 1.03×10⁻⁹ A/cm² at 240 K. Thus the responsivity of the detector varies only slightly with temperature. However owing to the decrease in the resistivity of the photodetector with the increase of temperature, Johnson noise limited detectivity decreases considerably.     

Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N⁺-InP/n⁰-In_0.53Ga_0.47As/p⁺-In_0.53Ga_0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS? and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS? from SILVACO® international. The photodetector exhibits a high quantum efficiency ～90%, responsivity ～1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ～5 × 10⁹ cm Hz^1/2 W^?1at wavelength 1.55–1.65 μm, dark current of the order of 10^?11 A at reverse bias of 1.5 V and 10^?13–10^?12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10^?14 W.     

Zero bias PIN photodetector based on gradient band distribution and doping gradient profile

Zero bias photodetector which was suitable for top-illuminated and side-illuminated was fabricated. Maximal bandwidth-efficiency product (BEP) value could be achieved when the epitaxial layer structure was optimized. The 3-dB bandwidth of the zero bias was 12.27 GHz, which was numerically above 80% of that maximum value. The measured external quantum efficiency of the photodetector was 17% at the zero bias and 1550 nm. The dark current of the photodetector with 12-μm diameter was less than 9 × 10⁻⁸ A at a reverse bias of 0.1 V. The influence of doping gradient profile on photodetector performance was illustrated by simulation comparison. The important aspects of the design of the high-speed low-bias photodetector were explained. The phenomenon of the photodetector at the reverse bias which was not the higher the better was explained. The improvement in performance of the photodetector was discussed. The fabrication process and the testing process were described in detail.     

Relaxation and thermal vibrations at the NaF(100) surface

The relaxation and the thermal vibrations of the NaF(100) surface are investigated in the temperature range between 25 K and 230 K by means of low-energy electron diffraction (LEED) and a subsequent I(V) structure analysis based on the tensor LEED approach (TLEED). According to the experiments, the NaF(100) surface is not significantly relaxed and has the ideal truncated bulk structure. The thermal vibrational amplitudes of the ions in the topmost layer are significantly enhanced compared to the bulk by a factor of 1.35 ± 0.15 and are equal within the error-bars for Na⁺ and F^? ions. Moreover, the relaxation and the dynamics of the NaF(100) surface are investigated using periodic density functional theory (DFT) calculations using pseudopotentials. In agreement with the experimental findings, the calculated relaxation of the NaF(100) surface is weak with static shifts of the ions of 0.01 Å to 0.02 Å. In the topmost layer, the Na⁺ ions are predicted to be slightly inward shifted, whereas the F^? ions are outward shifted, in accordance to predictions of previous shell-model calculations. A Born Oppenheimer molecular dynamics (BO-MD) simulation of the dynamics at the NaF(100) surface leads to a smaller enhancement of thermal motions of the ions at the surface compared to the experiment.     

1/f Noise QWIPs and nBn detectors

The low-frequency noise is a ubiquitous phenomenon and the spectral power density of this fluctuation process is inversely proportional to the frequency of the signal. We have measured the 1/f noise of a 640 × 512 pixel quantum well infrared photodetector (QWIP) focal plane array (FPA) with 6.2 μm peak wavelength. Our experimental observations show that this QWIP FPA’s 1/f noise corner frequency is about 0.1 mHz. With this kind of low frequency stability, QWIPs could unveil a new class of infrared applications that have never been imagined before. Furthermore, we present the results from a similar 1/f noise measurement of bulk InAsSb absorber (lattice matched to GaSb substrate) nBn detector array with 4.0 μm cutoff wavelength.     

Vibrational spectroscopy of oxygen on the (100) and (111) surfaces of lanthanum hexaboride

Reflection absorption infrared spectroscopy (RAIRS) and high resolution electron energy loss spectroscopy (HREELS) have been used to study the adsorption of oxygen on the (100) and (111) surfaces of lanthanum hexaboride. Exposure of the surface at temperatures of 95 K and above to O₂ produces atomic oxygen on the surface and yields vibrational peaks in good agreement with those observed in previous HREELS studies. On the La-terminated (100) surface, RAIRS peaks correspond to vibrations of the boron lattice that gain intensity due to a decrease in screening of surface dipoles that accompanies oxygen adsorption. A sharp peak at ～ 734 cm^?1 in the HREEL spectrum shows isotopic splitting with RAIRS into two components at 717 and 740 cm^?1 with full widths at half maxima of only 12 cm^?1. The sharpness of this mode is consistent with its interpretation as a surface phonon that is well separated from both the bulk phonons and other surface phonons of LaB₆. On the boron-terminated LaB₆(111) surface, broad and weak features are assigned to both vibrations of the boron lattice and of boron oxide. On the (100) surface, oxygen blocks the adsorption sites for CO, and adsorbed CO prevents the dissociative adsorption of O₂.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

Cuprous oxide (Cu₂O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu₂O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu₂O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu₂O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu₂O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu₂O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu₂O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm² of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu₂O photodetector as an affordable photosensor in the future.     

Measuring radon flux across active faults: Relevance of excavating and possibility of satellite discharges

Searching for gas exhalation around major tectonic contacts raises important methodological issues such as the role of the superficial soil and the possible long distance transport. These effects have been studied on the Xidatan segment of the Kunlun Fault, Qinghai Province, China, using measurement of the radon-222 and carbon dioxide exhalation flux. A significant radon flux, reaching up to 538 ± 33 mBq m^?2 s^?1 was observed in a 2–3 m deep trench excavated across the fault. On the soil surface, the radon flux varied from 7 to 38 mBq m^?2 s^?1, including on the fault trace, with an average value of 14.1 ± 1.0 mBq m^?2 s^?1, similar to the world average. The carbon dioxide flux on the soil surface, with an average value of 12.9 ± 3.3 g m^?2 day^?1, also remained similar to regular background values. It showed no systematic spatial variation up to a distance of 1 km from the fault, and no clear enhancement in the trench. However, a high carbon dioxide flux of 421 ± 130 g m^?2 day^?1 was observed near subvertical fractured phyllite outcrops on a hill located about 3 km north of the fault, at the boundary of the large-scale pull-apart basin associated with the fault. This high carbon dioxide flux was associated with a high radon flux of 607 ± 35 mBq m^?2 s^?1. These preliminary results indicate that, at the fault trace, it can be important to measure gas flux at the bottom of a trench to remove superficial soil layers. In addition, gas discharges need to be investigated also at some distance from the main fault, in zones where morphotectonics features support associated secondary fractures.     

High quality mid-wavelength infrared InAs/GaSb superlattices by exploring the optimum molecular beam epitaxy growth process

In this paper we report on the growth of mid-wavelength infrared superlattice materials by molecular beam epitaxy. We focused on the effects of process parameters, such as arsenic beam equivalent pressure and shutter sequences, on the key material properties, such as the lattice mismatch and the surface morphology. Though a smaller As beam equivalent pressure helps to reduce the lattice mismatch between the superlattice and the GaSb substrate, the As beam equivalent pressure itself has a lower limit below which the material’s surface morphology will degrade. To achieve fully lattice-matched superlattice materials, a novel shutter sequence in the growth process was designed. With well-designed interface structures, a high quality P-I-N superlattice mid-infrared detector structure was realized. At 77 K the dark current density at −50 mV bias was 2.4 × 10⁻⁸ A/cm² and the resistance-area product (RA) at maximum (−50 mV bias) was 2.4 × 10⁶ Ω cm², and the peak detectivity was then calculated to be 9.0 × 10¹² cm Hz^1/2/W. The background limited infrared photodetector (BLIP) level can be achieved at a temperature of 113 K.     

Vertical and dual-axis vibration of the seated human body: Nonlinearity,cross-axis coupling,and associations between resonances in transmissibility and apparent mass

The vertical apparent mass of the human body exhibits nonlinearity, with the principal resonance frequency reducing as the vibration magnitude increases. Measures of the transmission of vibration to the spine and the pelvis have suggested complex modes are responsible for the dominant resonance during vertical excitation, but the modes present with dual-axis excitation have not been investigated. This study was designed to examine how the apparent mass and transmissibility of the human body depend on the magnitude of vertical excitation and the addition of fore-and-aft excitation, and the relation between the apparent mass and the transmissibility of the body. The movement of the body (over the first, fifth and twelfth thoracic vertebrae, the third lumbar vertebra, and the pelvis) in the fore-and-aft and vertical directions (and in pitch at the pelvis) was measured in 12 male subjects sitting with their hands on their laps during random vertical vibration excitation (over the range 0.25–20 Hz) at three vibration magnitudes (0.25, 0.5 and 1.0 m s^?2 rms). At the highest magnitude of vertical excitation (1.0 m s^?2 rms) the effect of adding fore-aft vibration (at 0.25, 0.5, and 1.0 m s^?2 rms) was investigated. The forces in the vertical and fore-and-aft directions on the seat surface were also measured so as to calculate apparent masses. Resonances in the apparent mass and transmissibility to the spine and pelvis in the fore-and-aft and vertical directions, and pitch transmissibility to the pelvis, shifted to lower frequencies as the magnitude of vertical excitation increased and as the magnitude of the additional fore-and-aft excitation increased. The nonlinear resonant behaviour of the apparent mass and transmissibility during dual-axis vibration excitation suggests coupling between the principal mode associated with vertical excitation and the cross-axis influence of fore-and-aft excitation. The transmissibility measures are consistent with complex modes contributing to motion of the body at the principal resonance: pitch motions of the upper thoracic and lumbar spine, and vertical and fore-aft motion of the pelvis and spine. The mode varies with the magnitude of vertical and fore-and-aft excitation.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Atomic surface diffusion on Pt nanoparticles quantified by high-resolution transmission electron microscopy

Aberration-corrected high-resolution transmission electron microscopy allows for the delocalization-free observation of atomic motions on metallic surfaces and thus enables measurements of the diffusion of single atoms on the surfaces of nanoscopic objects such as nanoparticles. Using this recently introduced method, the diffusion coefficient for surface self-diffusion of Pt nanoparticles is determined through the fluctuating occupation of the particle's atomic columns. This diffusion coefficient is determined to lie in the range D ∼ (10⁻¹⁷ … 10⁻¹⁶) cm²/s.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.     

Manganite heterojunction photodetectors for femtosecond pulse laser measurements

We report a sensitive photodetector, based on a manganite junction La_2/3Ca_1/3MnO₃/Si, for femtosecond (fs) pulse laser energy per pulse and average power measurements. The La_2/3Ca_1/3MnO₃/Si photodetector exhibits D^? (normalized detectivity) greater than 5.229×10⁹ cm Hz^1/2 W^?1. The open-circuit photovoltage and short-circuit photocurrent responsivities reach ～268 V/mJ and ～275 A/mJ for single pulse irradiation, respectively, and the open-circuit photovoltage responsivity reaches ～1.7 V/W for average power illumination. The experimental results make the manganite junction a promising fs laser measurement detector and reference standard for calibrating fs lasers.     

Surface structure of γ-Fe2O3(111)

The surface structure of γ-Fe₂O₃(111) has been investigated with a range of surface techniques. Two different surface structures were discovered depending upon surface preparation techniques. Sputtering followed by annealing in vacuum produced a reduced surface characterised by a (2 × 2) LEED pattern, whereas sputtering followed by annealing in 1 × 10^? 6 mbar oxygen produced a surface characterised by a (√3 × √3)-R30° LEED pattern. The latter appears to be a very low conductivity surface, whereas the former has the band gap expected for maghemite (~ 2.0 eV). We propose that the reduced surface is a magnetite-like layer, whereas the oxidised surface is an Fe₂O₃-like layer.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe₃Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (⩾4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8–10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K₄^eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Néel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (⩽25 ML) films.     

Experimental study of the effect of viscoelastic damping materials on noise and vibration reduction within railway vehicles

Interior noise and vibration reduction has become one important concern of railway operating environments due to the influence of increased speeds and reduced vehicle weights for energy efficiency. Three types of viscoelastic damping materials, bitumen-based damping material, water-based damping coating and butyl rubber damping material, were developed to reduce the vibration and noise within railway vehicles. Two sleeper carriages were furnished with the new materials in different patterns of constrained-layer and free-layer damping treatment. The measurements of vibration and noise were carried out in three running carriages. It is found that the reduction effect of damping treatments depends on the running speed. The unweighted root-mean-square acceleration is reduced by 0.08–0.79 and 0.06–0.49 m/s² for the carriage treated by bitumen-based as well as water-based damping materials and water-based damping material, respectively. The first two materials reduce vibration in a wider frequency range of 63–1000 Hz than the last. It turns out that the damping treatments of the first two reduce the interior noise level by 5–8 dBA within the carriage, and the last damping material by 1–6 dBA. However, the specific loudness analysis of noises shows that the noise components between 125 and 250 Hz are dominant for the overall loudness, although the low-frequency noise is noticeably decreased by the damping materials. The measure of loudness is shown to be more accurate to assess reduction effect of the damping material on the acoustic comfort.     

Micro-machining of silicon wafer in air and under water

Laser ablation micro-machining tests are conducted on silicon wafer, both in air and under flowing water stream, with the use of 355 nm-X AVIA laser. Effects of laser pulse frequency, power level, scan velocity and focal plane position on the associated laser spatter deposition (in air), irradiated areas (under flowing water film) and taper are investigated. It shows that low frequency, i.e. 30–40 kHz, and high peak power result in smaller spatter and irradiated areas, and the hole taper decreases with increase in pulse frequency. Increase in the laser fluence broadens both the areas and increases the hole taper. Both areas enlarge with the increase of scanning velocity of more than 3 mm s^?1. The scan velocity has no effect on hole taper in air environment but inconsistent hole taper is obtained under flowing water stream. Furthermore, moving the focal plane position below the workpiece surface contributes relatively smaller areas of spatter deposition, irradiation and taper in comparison to zero focal plane position. Finally, the differences between laser ablation in air and under water are identified. The reduction in the spatter deposition and irradiated areas around the perimeter of the ablated hole and a smaller taper with the use of laser trepan drilling method in air and under water machining are investigated in this paper.