Micro-machining of silicon wafer in air and under water

Laser ablation micro-machining tests are conducted on silicon wafer, both in air and under flowing water stream, with the use of 355 nm-X AVIA laser. Effects of laser pulse frequency, power level, scan velocity and focal plane position on the associated laser spatter deposition (in air), irradiated areas (under flowing water film) and taper are investigated. It shows that low frequency, i.e. 30–40 kHz, and high peak power result in smaller spatter and irradiated areas, and the hole taper decreases with increase in pulse frequency. Increase in the laser fluence broadens both the areas and increases the hole taper. Both areas enlarge with the increase of scanning velocity of more than 3 mm s^?1. The scan velocity has no effect on hole taper in air environment but inconsistent hole taper is obtained under flowing water stream. Furthermore, moving the focal plane position below the workpiece surface contributes relatively smaller areas of spatter deposition, irradiation and taper in comparison to zero focal plane position. Finally, the differences between laser ablation in air and under water are identified. The reduction in the spatter deposition and irradiated areas around the perimeter of the ablated hole and a smaller taper with the use of laser trepan drilling method in air and under water machining are investigated in this paper.