Emission centers in Ca1–xPrxF2+x (x = 0.35) solid solutions

Luminescence spectra of Ca_0.65Pr_0.35F_2.35 solid solutions are studied. It is found that, depending on the excitation energy, different kinds of emission centers appear in these spectra. An interconfigurational 4f ¹5d¹ →4f² luminescence is typical for single Pr³⁺ ions in tetragonal sites. Data on the structure of the solid solutions show that the emission centers involved in ¹S₀ → 4f² transitions can be attributed to Pr³⁺ ions contained in clusters.     

Noncentrosymmetric cubic helical ferromagnets Mn1 ? yFeySi and Fe1 ? xCoxSi

Two systems of noncentrosymmetric cubic helical magnets Mn_{1 − y} Fe _y Si (y = 0.06, 0.08, 0.10) and Fe_{1 − x} Co _x Si (x = 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.50) have been compared. The concentration dependences of the critical temperature and magnetic field have been obtained using small-angle polarized-neutron scattering and analyzed in the framework of the Bak-Jensen model. It has been established that, among the two interactions that play the main role in these systems, i.e., the isotropic symmetric ferromagnetic exchange and the Dzyaloshinskii-Moriya isotropic antisymmetric interaction, the former interaction determines the critical temperature in the Mn_{1 − y} Fe _y Si system and the latter interaction determines this temperature in the Fe_{1 − x} Co _x Si system.     

Synthesis and characterization of ZnxHg1?xSeyS1?y quantum dots

This article describes the synthesis of highly water-soluble Zn _x Hg_1−x Se _y S_1−y quantum dots (QDs) in aqueous solution through a simple photo-assisted reaction between ZnSe QDs and mercury(I) nitrate dihydrate [Hg₂(NO₃)₂·2H₂O]. In order to deduce the optimal synthesis conditions, we varied several parameters, including the concentrations of mercaptosuccinic acid (MSA) and Hg₂(NO₃)₂·2H₂O, the illumination time, and the reaction temperature. When irradiated at temperatures below 80 °C, the ZnSe QDs reacted with the S²⁻ ions formed rapidly from MSA and the Hg²⁺ ions formed from Hg₂ ²⁺ ions to form Zn _x Hg_1−x Se _y S_1−y QDs through a process of photo-etching and surface combination. Under different conditions, we prepared a series of Zn _x Hg_1−x Se _y S_1−y QDs that emit fluorescence at the maximum wavelengths ranging from 405 to 760 nm. Inductively coupled plasma-mass spectrometry and transmission electron microscopy/energy dispersive spectrometry revealed that the content of Hg in the Zn _x Hg_1−x Se _y S_1−y QDs was greater when the synthesis was conducted at higher temperature. The Zn_0.88Hg_0.12Se_0.44S_0.56 QDs exhibit improved photostability than crude ZnSe QDs and possess long lifetimes (τ₁ ~ 38 ns and τ₂ ~ 158 ns).     

Thermal conductivity of single crystals of Ca1 ? xErxF2 + x and Ca1 ? xTmxF2 + x solid solutions

The thermal conductivity of single crystals of Ca_{1 − x} Er _x F_{2 + x} (x = 0.01, 0.05, 0.07, and 0.10) and Ca_{1 − x} Tm _x F_{2 + x} (x = 0.02, 0.04, and 0.06) solid solutions is studied in the temperature ranges 50–300 and 298–673 K. With increasing content of rare-earth elements, the behavior of thermal conductivity in these solid solutions changes from the characteristic of defect single crystals to glasslike. The concentration dependences of thermal conductivity for the two systems differ insignificantly.     

Ba1-xB2-y-zO4SixAlyGaz晶体和频可调谐深紫外飞秒激光器

介绍了一种基于新型非线性晶体Ba_1-xB_2-y-zO₄Si_xAl_yGa_z 的可调谐深紫外飞秒激光光源. 从理论上分析了基频光和倍频光在通过非线性晶体时所造成的空间走离和群速度失配, 为了补偿空间走离以及波长调谐过程中晶体折射造成的光束偏离现象, 将两块相同的倍频晶体成镜像放置来产生二次谐波. 并调节延迟线的长度来补偿基频光和倍频光之间的群速度失配, 从而提高和频转换效率. 然后通过和频方式进行三倍频和四倍频来突破晶体相位匹配条件的限制, 产生了波长低于200 nm的深紫外飞秒激光. 利用钛宝石激光器提供基频光光源, 最终在250–300 nm, 192.5–210 nm 范围内获得了高重频、可调谐超短脉冲紫外和深紫外激光. 并在基频光波长为800 nm时, 得到的二倍频、三倍频和四倍频的功率分别为1.28 W, 194 mW和5.8 mW, 相对于前一级的转换效率依次为46.14%, 15.16%和3%. 采用互相关法测量得到266.7 nm紫外激光的脉冲宽度约为640.4 fs.     

Study of high-temperature oxygen permeability in Sr1 ? xLaxCo0.8 ? yNbyFe0.2O3 ? z perovskites

The oxygen permeability of ceramic SrCo_{0.8 − y} Fe_0.2Nb _y O_{3 − z} (0 ≤ y ≤ 0.2) and La_0.3Sr_0.7Co_0.6Fe_0.2Nb_0.2O_{3 − z} disc membranes as a function of temperature and oxygen partial pressure was studied. Kinetic analysis was performed based on the experimental data on oxygen permeability as a function of oxygen partial pressure.     

Ternary alloys CdyZn1 ? yO and MgxZn1 ? xO as materials for optoelectronics

Thin films of Cd _y Zn_{1 − y} O and Mg _x Zn_{1 − x} O (y = 0−0.35, x = 0−0.45) ternary alloys have been grown by pulsed laser deposition onto sapphire substrates. The record solubility limits of Cd (y = 0.3) and Mg (x = 0.35) have been achieved in hexagonal zinc oxide. The mismatch of the lattice parameters a of Cd_0.2Zn_0.8O and Mg_0.35Zn_0.65O does not exceed 1%; in this case, the band gap discontinuity is 1.3 eV. The surface roughness of the films does not exceed 2.5 nm at x = 0−0.27 and y = 0−0.20.     

Fe掺杂量对双层复合结构BaTi1-zFezO3+δ-Tb1-xDyxFe2-y中磁电耦合的影响

采用溶胶凝胶方法制备了Fe掺杂钛酸钡多晶系列陶瓷BaTi_1-zFe_zO_3+δ(0.005≤z≤0.02) (BTFO).X射线衍射实验显示,所制备的BTFO的结构仍然为四方相钙钛矿.差热分析表明,该BTFO样品的铁电-顺电转变温度及相变潜热随掺杂量z的增加而下降.将该BTFO极化后与Tb_1-xDy_xF 关键词： 磁电耦合 掺杂效应 掺杂钛酸钡     

Co1-xNixSb3-ySey热电输运中晶界和点缺陷的耦合散射效应

结合机械合金化与放电等离子烧结工艺制备了Ni和Se共掺的细晶方钴矿化合物Co_1-xNi_xSb_3-ySe_y,研究了晶界和点缺陷的耦合散射效应对CoSb₃热电输运特性的影响.通过Ni掺杂优化载流子浓度提高功率因子.在x=0.1时,功率因子达到最大值1750μWm^-1K^-2(450℃),是没有掺Ni试样的两倍.晶界和点缺陷的耦合散射机理使晶格热导率急剧下降,其中Co_0.9Ni_0.1Sb_2.85Se_0.15的室温晶格热导率降低至1.67Wm^-1K^-1,接近目前单填充效应所能达到的最低值1.6Wm^-1K^-1,其热电优值ZT在450℃时达到最大值0.53.将Callaway-Von Baeyer点缺陷散射模型嵌入到Nan-Birringer有效介质理论模型,对晶界散射和点缺陷散射的耦合效应对热导率的影响进行了定量分析,模型计算与实验结果符合.理论模型计算表明,当晶粒尺寸下降到50nm同时掺杂引入点缺陷散射后,Co_0.9Ni_0.1Sb_2.85Se_0.15的晶格热导率下降到0.8Wm^-1K^-1. 关键词： 3')" href="#">CoSb₃ Ni和Se掺杂 热电性能 耦合散射效应     

Zn1-x-yNaxCoyO薄膜的脉冲激光沉积制备及表征

采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的ZnO薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明:Na,Co共掺没有改变ZnO的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10%时,峰值最强且红移最明显,发光峰波长为397 nm,薄膜的电阻率最低,达到了8.34×10^-1 Ω ·cm.深入讨论了 关键词： 脉冲激光沉积 1-x-yNa_xCo_yO薄膜')" href="#">Zn_1-x-yNa_xCo_yO薄膜 光电性质 红移     

应变Si1-xGex能带结构研究

采用结合形变势理论的K.P微扰法建立了（001）,（101）和（111）面弛豫Si衬底上生长的应变Si_1-xGe_x（x≤0.5）的能带结构模型,获得了其导带带边能级、价带带边能级、导带劈裂能、价带劈裂能及禁带宽度随Ge组分（x）的函数变化关系,该量化数据对器件研究设计可提供有价值的参考． 关键词： 1-xGe_x')" href="#">应变Si_1-xGe_x K.P 法 能带结构     

Crystal structure and electrical properties of GdxMn1 ? xS and TixMn1 ? xSe solid solutions

Regions of the existence of sulfide Gd _x Mn_{1 − x} S and selenide Ti _x Mn_{1 − x} Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature range 80–900 K. It has been established that the substitution of Gd²⁺ and Ti²⁺ ions for Mn²⁺ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation substitution in solid solutions brings about a change from the hole conduction (α > 0) characteristic of the manganese monosulfide and monoselenide to the electronic conduction (α < 0).     

窄带隙KNb1-xFexO3-δ的室温铁磁性

We have investigated the structure, optical and magnetic properties of ferroelectric KNb_1-xFexO_3-δ (X=0, 0.01, 0.03, 0.05, 0.10, 0.15, 0.20, 0.25) synthesized by a traditional solid-state reaction method. According to the X-ray diffraction and the results of Rietveld refinement, all the samples maintain orthorhombic distorted perovskite structures with Amm2 space group without any secondary phase, suggesting the well incorporation of Fe ions into the KNbO₃ matrix. With the increase of Fe concentration, the band gap of each sample is decreased gradually, which is much smaller than the 3.18 eV band gap of pure KNbO₃. Through X-ray photoelectron spectrum analysis, the increased density of oxygen vacancy and Fe ions may be responsible for the observed decrease in band gap. Compared with the pure KNbO₃, Fe doped samples exhibit room-temperature weak ferromagnetism. The ferromagnetism in KNb_1-xFexO_3-δ with low-concentration dopants (X=0.01-0.10) can be attributed to the bound magnetic polaron mediated exchange. The enhancement of magnetism for the high-concentration (X=0.10-0.20) doped samples may arise from the further increase of magnetic Fe ions.     

The electrical characteristics of MBE n-Hg1–xCdxTe (x?=?0.29–0.31) MIS structures with sharp inhomogeneities in composition

The effect of regions with periodic sharp 48–54 nm thick inhomogeneities in composition on the electrophysical characteristics of MIS structures based on graded-gap n-Hg_1–x Cd _x Te (x = 0.29–0.31) grown by molecular-beam epitaxy is studied. It is found that major electro-physical and photo-electrical characteristics are qualitatively similar for MIS structures based on n-Hg_1–x Cd _x Te with sharp inhomogeneities in composition (barriers) and without “barriers”. It is shown that the electrical characteristics are mostly affected by the “barrier regions” located close to the insulator – semiconductor interface. This effect is manifested in an increase of the effective dielectric thickness, which can be due to the fact that the regions of enhanced composition form potential barriers for electrons, and in a decrease in the relaxation time of non-equilibrium carriers due to recombination at the boundaries of the regions with sharp changes in composition.     

应变Ge/Si1-xGex 价带色散模型

基于k·p微扰理论, 通过引入应变哈密顿量作为微扰, 建立了双轴应变Ge/Si_1-xGe_x价带色散关系模型. 模型适于任意晶向弛豫Si_1-xGe_x虚衬底上的应变Ge价带结构, 通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量. 模型的Matlab模拟结果显示, 应变Ge/Si_1-xGe_x价带带边空穴有效质量随Ge组分的增加而减小, 其各向异性比弛豫Ge更加显著. 本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.     

Pb1－xMnxSe薄膜的光学特性

采用分子束外延的方法在BaF₂(111)衬底上制备出了高质量的Pb_1-xMn_xSe(0≤x≤0.0681)薄膜.X射线衍射结果表明，Pb₁-xMn_xSe薄膜为立方相NaCl型结构，没有观察到MnSe相分离现象，薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小，Mn含量由Vegard公式得到.通 关键词： 1-xMn_xSe外延薄膜')" href="#">Pb_1-xMn_xSe外延薄膜 透射光谱 带隙 折射率     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES     

Optical characterization in Pb(Zr1?xTix)1?yNbyO3 ferroelectric ceramic system

In this work, visible photoluminescence was observed at room temperature in a sintered Pb(Zr_1-xTi_x)_1-y Nb_yO₃\mathrm{Pb}(\mathrm{Zr}_{1-x}\mathrm{Ti}_{x})_{1-y} \mathrm{Nb}_{y}\mathrm{O}_{3} perovskite-type structure system, doped with Nb using the next excitation bands 325, 373 and 457 nm. The intensity and energy of such emissions have been studied by changing the Nb concentration (0<y<0.01) and the Ti content (x), with x=0.20,0.40,0.53,0.60 and 0.80, on both sides of the morphotropic phase boundary (MPB) zone. The principal bands become visible at energies of 1.73, 2.56 and 3.35 eV. The results reveal the role of the Nb⁵⁺ ion substitutions by Zr⁴⁺ or Ti⁴⁺ ions and the symmetry presented in the rhombohedral or tetragonal side of the MPB. Raman spectra which are similar for compositions: 20/80, 40/60 and 53/47 (tetragonal phases) show nine bands, centered around 137, 194, 269, 331, 434, 550, 612, 712 and 750 cm⁻¹. The spectra for samples 60/40 and 80/20, rhombohedral phase, show significant differences, only six bands appear, centered around 124, 209, 234, 330, 549 and 682 cm⁻¹. In addition, optical absorption spectroscopy, structural and micro-structural measurements were carried out by using Uv-vis spectroscopy, X-ray diffraction and scanning electron microscopy techniques, respectively. The experimental results of band gap energy, e.g., in our samples are in accordance with the findings by J. Baedi et al. in the calculations of band structure, energy gap and density of states for different phases of Pb(Zr_1−x Ti _x )O₃ using density functional theory (DFT).     

Elektronen-Spin-Resonanz an (La1??xGdyCex)Al2

In the EPR of (La_1––x Gd _y Ce _x )Al₂ a bottleneck in the relaxation of the conduction electrons to the lattice is present at sufficiently high Gd-concentrations. The bottleneck can be broken by decreasing the Gd-concentration or by adding Cerium as a spin-flip-scatterer.g-factor and line broadening are measured for (La_1–y Gd _y )Al₂ and (La_1––x Gd _y Ce _x )Al₂ as a function of temperature and Gd- and Ce-concentrations. The Cerium induced relaxationsrate _eL (Ce) increases linearly with Ce-concentration up tox0.025. This corresponds to the fact, well known by measurements of the Kondo anomalies, that Cerium impurities show no significant interaction up to rather high concentrations.     

LixNayCoO2的制备和热电性质

用固相反应方法，成功地合成了具有交互生长结构的Li_xNa_yCoO₂单相多晶系列样品. 热电势测量表明，该系统的室温热电势比Na_xCoO₂体系约高出60μV/K. 基于空穴载流子具有O2p特征，提出Li_xNa_yCoO₂中额外的热电势来源于氧空穴的占位熵. 关键词： xNa_yCoO₂')" href="#">Li_xNa_yCoO₂ 热电势 热电材料