[Pd/Co-Nb/Pd/Si]多层膜的结构与磁性

用高频溅射法制备了两套[Pd/Co-Nb/Pd/Si]多层膜,分别用X射线衍射和振动样品磁强计做了结构和磁性测量。随Pd层厚度增加(或Co-Nb层厚度减少),Pd层由非晶态过渡到晶态,并观察到Pd的fcc(111)双峰结构,双峰的位置逐渐从两侧向体材料Pd的fcc(111)峰的位置靠近。双峰来源于Co-Nb层与Pb层、Pd层与Si层的晶格失配度以及靠近这两种界面的Pd原子的极化不同。样品的饱和磁化强度随Pd层增厚(或Co-Nb层增厚)从小于同样成分的Co-Nb合金体材料的饱和磁化强度值单调增大到大于体材料     

Co-Zr/Pd多层膜的磁性与结构

Co-Zr/Pd多层膜由高频溅射方法制得．磁性合金Co-Zr层厚度固定为1.8nm，改变Pd层厚度0.5—6nm．由振动样品磁强计测量，发现随Pd层厚度增加，磁化强度发生周期性振荡变化，周期约为1nm，这是由Pd层的极化振荡引起的．经X射线衍射测得Pd层厚度超过1.3nm时，磁性合金Co-Zr层发生晶化，而厚的Co-Zr单层膜是非晶结构．X射线大角衍射图中的超晶格峰表明，在Co-Zr层和Pd层之间存在相关生长．而且还发现，随Pd层厚度增加，样品在垂直膜面方向的晶粒尺寸及fcc（111）面的面间距发生周期性 关键词：     

Intra-layer synchronization in duplex networks

This paper explores the intra-layer synchronization in duplex networks with different topologies within layers and different inner coupling patterns between, within, and across layers. Based on the Lyapunov stability method, we prove theoretically that the duplex network can achieve intra-layer synchronization under some appropriate conditions, and give the thresholds of coupling strength within layers for different types of inner coupling matrices across layers. Interestingly,for a certain class of coupling matrices across layers, it needs larger coupling strength within layers to ensure the intra-layer synchronization when the coupling strength across layers become larger, intuitively opposing the fact that the intra-layer synchronization is seemly independent of the coupling strength across layers. Finally, numerical simulations further verify the theoretical results.     

Surface morphology and local magnetic properties of electrodeposited thin iron layers

Thin iron layers with different thickness were prepared by electrodeposition on the polycrystalline substrate. The surface morphology of the layers, their structure and local magnetic properties were studied using scanning tunneling microscopy (STM), X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS). STM studies revealed the granular structure of the surface of the electrodeposited iron layers with the roughness up to 10 nm. XRD analysis proved that these layers were highly strained. The CEMS spectra showed an in-plane magnetic anisotropy in the iron layers. Isomer shift of the electrodeposited iron was different than that of the -Fe. This difference was attributed to the internal stresses existing in the electrodeposited layers.     

Radial magnetic anisotropy in amorphous electrolytically prepared CoP and FeP cylindrical layers

Conclusion The presence of radial magnetic anisotropy with the local axis of the easy magnetization perpendicular to the surface of the layers may be identified in the amorphous cylindrical CoP layers by means of the study of the domain structure using the Bitter technique. This anisotropy is maintained also after undercritical isothermal annealing. In amorphous cylindrical FeP layers the radial magnetic anisotropy is formed — in contrast to CoP layers — only after isothermal annealing below the crystallization temperature. However, the amorphous-crystalline transformation leads in both layers to an apparent disturbance of radial anisotropy, which may be connected with the character of the crystallization of layers and with the new distribution of internal stresses.Dedicated to Jan Kaczér DrSc on the occasion of his 65th birthday.     

Pressure effects on the magnetic behaviour of copper (II) compounds: magnetic ordering of layered organic/inorganic magnets

The high hydrostatic pressure effect on the magnetic properties of the layered hybrid compounds Cu(2)(OH)(3)(C(n)H(2n+1)CO(2))·mH(2)O with distance between magnetic layers of up to 40 ? is studied. It is shown that the temperature of the ferromagnetic ordering decreases linearly with pressure increase. From measurements of susceptibility in the paramagnetic region, using both quantum Heisenberg and Ising exchange coupling models in layers and dipole interaction between layers, the in- and interlayer interactions are deduced. The dipole interactions are calculated and are shown to coincide with the model of Ising interactions in the layers. The value and decrease of T(c) under pressure are mainly driven by the value and decrease of the in-plane interactions. The formation of the long range ordering in the layered sample with dipolar interaction between layers is analysed. As a conclusion it is suggested that for designing high temperature ferromagnetism in layer compounds it is enough to have large in-plane interactions of ions with specific symmetry in layers and weak dipole interactions between layers.     

Synthesis of narrow band gap (V2O5)x-(TiO2)1−x nano-structured layers via micro arc oxidation

V₂O₅-TiO₂ layers with a sheet-like morphology were synthesized by micro arc oxidation process for the first time. Surface morphology and topography of the layers were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM). Phase structure and chemical composition of the layers were also studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques. It was revealed that the composite layers had a sheet-like structure average thickness of which was about 100 nm depending on the applied voltage. The layers consisted of anatase, rutile, and vanadium pentoxide phases fractions of which varied with the applied voltage. The optical properties of the layers were also examined employing a UV-vis spectrophotometer. It was found that the absorption edge of the grown composite layers shifted toward the visible wavelengths when compared to MAO-synthesized pure titania layers. The band gap energy of the composite layers was calculated as 2.58 eV. Furthermore, photo-catalytic performance of the layers was examined by measuring the decomposition rate of methylene blue under ultraviolet and visible irradiations. The results demonstrated that about 90% and 68% of methylene blue solution was decomposed after 120 min ultraviolet and visible irradiations over the composite layers, respectively.     

Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications

In order to study the effect of different buffer layers on the Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films, 10-nm thick (Pb_0.72La_0.28)Ti_0.93O₃ (PLT) and Pb(Zr_0.52Ti_0.48)O₃ buffer layers have been deposited on the Pt(1 1 1)/Ti/SiO₂/Si substrates by pulsed laser deposition, respectively. The top buffer layers were also deposited on PZT thin films with the same thickness of the seed layers in order to enhance the fatigue characteristics of PZT thin films. We compared the results of dielectric constant, hysteresis loops and fatigue resistance characteristics. It was found that the dielectric properties of PZT thin films with PLT buffer layers were improved by comparing with PZT thin films with PZT buffer layers. The polarization characteristics of PZT thin films with PLT buffer layers were observed to be superior to those of PZT thin films using PZT buffer layers. The remanent polarization of PZT thin films showed 36.3 μC/cm² and 2.6 μC/cm² each in the case of use PLT and PZT buffer layers. For the switching polarization endurance analysis, PZT thin films with PLT buffer layers showed more excellent result than that of PZT thin films with PZT buffer layers.     

Insights from angle-resolved photoemission spectroscopy of an undoped four-layered two-gap high-T(c) superconductor

An undoped cuprate with apical fluorine and inner (i) and outer (o) CuO(2) layers is a 60 K superconductor whose Fermi surface has large n- and p-doped sheets with the superconducting gap on the n sheet twice that on the p sheet. The Fermi surface is not reproduced by the local density approximation, but the screening must be substantially reduced due to electronic correlations, and oxygen in the o layers must be allowed to dimple outwards. This charges the i layers by 0.01|e|, causes a 0.4 eV Madelung-potential difference between the i and o layers, quenches the i-o hopping, and localizes the n sheets onto the i layers, thus protecting their d-wave pairs from being broken by scattering on impurities in the BaF layers. The correlation-reduced screening strengthens the coupling to z-axis phonons.     

Microdoping of subsurface gallium arsenide layers with hydrogen ions

A method of microdoping subsurface semiconductor layers with hydrogen ions (protons) with the use of a plasma-beam discharge is suggested. The method was tested on gallium arsenide layers and was proven to be more efficient than other well-known methods used for modifying subsurface layers.     

Standing shear waves in rubberlike layered media

Standing shear waves arising in layered media the shear modulus of which varies in a stepwise manner at the plain boundaries between the layers are considered. A general solution is obtained for the shear wave amplitudes in a resonator with an N-layer structure the lower boundary of which performs harmonic vibrations while a finite-mass plate is attached to the upper boundary. Results of calculations and measurements are presented for a resonator with a structure in which nondeformable metal layers alternate with elastic rubberlike polymer layers. It is shown that the resonance frequencies of such a resonator can be controlled by changing the number of layers and their thicknesses. It is demonstrated, both experimentally and theoretically, that, from the resonance curve of a resonator with a two-layer structure, it is possible to determine the shear modulus of one of the layers under the condition that the elasticity of the other layer is known. The method of separation into a finite number of layers is used to analyze the resonance characteristics of a one-dimensional resonator filled with a rubberlike medium the properties of which continuously vary in the direction perpendicular to the shear displacements. The choice of the number of layers depending on the type of inhomogeneity is analyzed.     

磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响

以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进GaN外延的横向生长,减少了形核岛合并时的界面数量和高度差异,降低了缺陷和位错产生的几率。研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。     

Effect of the anisotropy of a conducting layer on the dispersion law of electromagnetic waves in layered metal-dielectric structures

The dispersion laws of electromagnetic waves in layered periodic metal-dielectric structures with anisotropic metal layers have been theoretically analyzed. It has been found that the anisotropy of metal layers is responsible for the appearance of additional allowed energy bands for photons. It has been shown that these bands correspond to plasma (Langmuir) waves propagating in anisotropic metal layers of the structure. Conditions under which the directions of group and phase velocities of Langmuir waves coincide or are opposite have been determined. It has been shown that the penetration of the electromagnetic field of Langmuir waves into dielectric layers is exponentially weak and this field is primarily concentrated in metal layers, where it oscillates in the direction perpendicular to the plane of the layers.     

Multi-walled carbon nanotube-based transparent conductive layers deposited on polycarbonate substrate

We characterize 10-nm outer diameter multi-walled carbon nanotubes (powder and dispersion), which will be used for the preparation of conductive layers on polycarbonate (PC) substrates. The optical, electrical, and mechanical characterization of the spin-coated deposited layers is shown and compared with results obtained for layers deposited in borosilicate glass substrates. In both glass and plastic, the layers have shown transmittance higher than 78% in the visible range and have passed the tape and pencil standard tests for adherence and hardness, respectively. However, the sheet resistance presented by layers deposited on PC is still much superior to that of layers deposited on glass and sintered at higher temperatures. Nevertheless, the results obtained still allow the use of such layers in antistatic applications.     

Multi-stacked organic light-emitting diodes using zinc oxide nanoparticle interfacial layers

Stacked organic light-emitting diodes (SOLEDs) with 30-nm nanoparticle (NP) interfacial layers were investigated. Zinc oxide (ZnO) was used as an interfacial layer between two green polymer (GP) layers. SOLEDs with NP interfacial layers had higher device efficiency than did a single-unit device due to the high probability of exciton recombination that originated from the Auger electron-assisted energy up-conversion process. Although the current density and luminance of SOLEDs with ZnO NP interfacial layers were smaller than those of the reference device, the efficiency was doubled because of the big band alignment difference and the large band gap between GP and ZnO NP interfacial layers, which induced more radiative-exciton recombination.     

The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs

Light-emitting diodes (LEDs) were formed by hydrothermally growing n-ZnO nanostructures on p-GaN with or without seed layers. The performance of the fabricated LEDs was studied. The seed layers not only have a great influence on the morphology and density of the ZnO nanostructures but also determine the lighting bias and emitting mechanism. The LEDs without seed layers and with sputtered seed layers exhibit light emission only under reverse bias, which is believed due to the GaN buffer layer/p-GaN p–n junction. The LEDs with sol–gel seed layers exhibit light emission under both forward and reverse biases. With the increase of the forward bias, the LEDs first demonstrate a red electroluminescence emission coming from the sol–gel seed layers and then demonstrate an orange emission coming from the ZnO nanorods. The sol–gel seed layer and the interface play a very important role in the electroluminescence.     

Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction

Distributed antireflection (AR) layers with different composition ratios of ITO and SiO(2) formed on an ITO electrode of GaN-based LEDs provide substantial enhancement in light-extraction efficiency. By using the coradio frequency magnetron sputtering deposition, four 50 nm thick AR layers with graduated refractive indices were fabricated. The effect of the AR layers on enhancing the efficiency of the LED device was analyzed by electroluminescence (EL) and I-V measurements. As a result, the EL intensity of the LED device grown on the patterned sapphire substrate with AR layers was increased by up to 13% compared to the conventional patterned sapphire substrate-applied LED device without AR layers at a drive current of 20 mA. The AR layers on top of the LED device gradually changed the refractive indices between ITO (n=2.1) and air (n=1.0), which minimized the total internal reflection of generated light. And no degradation in the electrical characteristic of the LEDs was observed according to the I-V measurements.     

Orientation fluctuation trend of Pt and ZnO layers in film bulk acoustic resonator

ZnO-based film bulk acoustic resonator (FBAR) was fabricated with many ZnO/Pt layers by magnetron sputtering. All the layers are good crystallized and highly textured. By crystallographic test, the orientation fluctuation of Pt layer increases with increasing film thickness or stack layers, whereas that of ZnO layer decreases slightly. It is consistent with ZnO grain c-axis tilting observed using transmission electron microscopy. Due to these good quality layers, the device has a high resonate frequency of 3.94 GHz.     

Ultraviolet wave plates based on monolithic integration of two fully filled and planarized nanograting layers

We successfully fabricated a high-performance half-wave plate for the 405 nm wavelength based on monolithic integration of two nanograting layers. Each of the nanograting layers functions as a quarter-wave plate. Both of the nanograting layers were fully filled and planarized to achieve the monolithic integration. UV-nanoimprint lithography, along with thin-film deposition, high-aspect-ratio reactive ion etching, and trench-filling technologies, was used in fabrication and integration of the individual nanograting layers. High-aspect-ratio nanogratings with sub-50 nm linewidths and 100 nm spacing were fabricated to achieve good optical performance at the near-UV wavelength. The ability to integrate multiple nanostructure-based optical layers opens a path for integrated multifunction devices, as well as a new strategy for driving both miniaturization and cost.     

Fabrication of broadband antireflection coatings using broadband optical monitoring mixed with time monitoring

Multi-layer optical coatings with complex spectrum requirements, such as multi-band pass filters, notch filters, and ultra-broadband antireflection coating, which usually contain very thin layers and sensitive layers, are difficult to be fabricated using a quartz crystal monitoring method or a single wavelength optical monitoring system(SWLOMS). In this paper, a broadband antireflection(AR) coating applied in the wavelength range from 800 nm to 1800 nm was designed and deposited by ion beam sputtering(IBS). Ta_2O_5 and Si O_2 were chosen as high and low refractive index coating materials,respectively. The optimized coating structure contains 9 non-quarter-wave(QW) layers totally with ultra-thin layers and sensitive layers in this coating stack. In order to obtain high transmittance, it is very important to realize the thickness accurate control on these thin layers and sensitive layers. A broadband optical monitoring mixed with time monitoring strategy was successfully used to control the layer thickness during the deposition process. At last, the measured transmittance of AR coating is quite close to the theoretical value. A 0.6% variation in short wavelength edge across the central 180 mm diameter is demonstrated. A spectrum shift of less than 0.5% for 2 continuous runs is also presented.