Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser

The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350 fs. The saturation intensity of the absorber was found to be 115 μJ/cm² at 1060 nm. The modulation depth of the absorber could be about 7%. Passive mode-locked Nd:YVO₄ laser using this kind of absorber was demonstrated. The largest average output power of the mode-locked laser is 1.4 W at the pump power of 7.8 W. The continuous wave mode-locked pulses with the repetition of 80 MHz were achieved.     

Ultrafast laser performance of Yb3 +: Sc2SiO5 crystal with a single-walled carbon nanotube absorber

Single-walled carbon nanotube (SWCNT) absorber fabricated by vertical evaporation is used in passively mode-locked Yb^3 +:Sc₂SiO₅ (Yb:SSO) ultrafast laser for the first time. The performance of Yb:SSO ultrafast laser with pulse width as short as 880 fs is studied and the average output power is 712 mW. To our knowledge, this is the highest output power of femtosecond lasers with SWCNT-SAs reported. In addition, we firstly demonstrate a passively mode-locked picosecond Yb:SSO laser without inserting any dispersion compensation device. The pulses width is as short as 5.4 ps and the output power is 940 mW.     

2 μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber

We report the first demonstration, to our knowledge, of passive Q-switched mode-locking in a Tm³⁺:YAP laser, operating in the 2 μm broadly spectral region formed with a compact Z-flod cavity. A transmission-type single-walled carbon nanotube saturable absorber (SWCNT–SA) is used for the initiation of the pulse generation. The repetition rate of the Q-switched envelope was 60 kHz at the pump power of 8.6 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of ～92 MHz. A maximum average output power of 761 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally.     

LD-end-pumped passively Q-switched Nd:YAG ceramic laser with single wall carbon nanotube saturable absorber

We report on a LD-end-pumped passively Q-switched Nd:YAG ceramic laser by using a novel single wall carbon nanotube saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric Arc discharge method on quartz substrate with absorption wavelength of 1064 nm. We firstly investigated the continuous wave (CW) laser performance and scattering properties of Nd:YAG ceramic sample. For the case of passively Q-switched operation, a maximum output power of 376 mW was obtained at an incident pump power of 8.68 W at 808 nm, corresponding to an optical–optical conversion efficiency of 4.3%. The repetition rate as the increase of pump power varied from 14 to 95 kHz. The minimum pulse duration of 1.2 μs and maximum pulse energy of 4.5 μJ was generated at a repetition rate of 31.8 kHz.     

Low-cost multiple-walled carbon nanotubes absorber for passively Q-switched and mode-locked Nd:YVO4 laser

A low-cost multiple-walled carbon nanotubes/polyvinyl alcohol (MWCNTs/PVA) absorber was fabricated by the characteristics of high viscosity in large molecule PVA aqueous solution and vertical evaporation technique. Sandwich structured MWCNT/PVA absorber was constructed by a piece of MWCNT absorber, a piece of round quartz and a piece of reflective mirror. We exploited it to realize Q-switched mode locking operation in a diode-pumped Nd:YVO₄ laser. The maximum average output power is about 630 mW.     

An eye-safe KTiAsO4 intracavity optical parametric oscillator driven by a diode pumped composite Nd:YAG/Cr4+:YAG laser

A mini eye-safe KTiAsO₄ intracavity optical parametric oscillator (IOPO) employing the shared cavity configuration and driven by a diode-end-pumped composite Nd:YAG/Cr⁴⁺:YAG laser is demonstrated in this paper. Under an incident laser diode power of 11 W, a maximum average output power of 424 mW at 1534 nm was obtained. The corresponding signal pulse width and repetition rate were 1.2 ns and 16.7 kHz, respectively. The fluctuation of the average signal output power over long-term operation was found to be ±3.0%. A theoretical model for the compact IOPO was also presented in this paper.     

Saturable absorber at 940 nm using single wall carbon nanotubes deposited by vertical evaporation technique

The vertical evaporation technique allows us to fabricate aligned single wall carbon saturable absorbers. The nonlinear parameters of the absorber at the wavelength of 940 nm were measured. The measured bi-exponential lifetimes of the absorber are 330 fs and 850 fs, respectively. The saturation intensity and modulation depth were found to be 2000 μJ/cm² and 10% for SWCNT absorber at the direction of alignment, in comparison to 950 μJ/cm² and 7% for the SWCNT solution.     

Diode-pumped passively mode-locked Nd:Lu0.15Y0.85VO4 laser with a single-walled carbon nanotube saturable absorber

Diode-pumped passively mode-locked Nd:Lu_0.15Y_0.85VO₄ laser with a single-walled carbon nanotube saturable absorber was demonstrated for the first time, to our best knowledge. The laser generated 19-ps pulses with maximum output power of 902 mW for the incident pump power of 6.5 W at the central wavelength of 1064 nm, giving an optical conversion efficiency of 14%. The continuous wave mode-locking conditions of single-walled carbon nanotube saturable absorber were analyzed and discussed.     

Compact resonantly intra-cavity pumped tunable Ho:Sc2SiO5 laser

A compact intra-cavity pumped low threshold continuous-wave Ho:Sc₂SiO₅ laser is reported. The characteristics of output wavelength tuning are investigated by use a intra-cavity briefringent (BF) filter. A wavelength tunable range of 140 nm from 2020 to 2160 nm is achieved. For the free-running mode, the laser slope efficiency is 24.8%, when the output central wavelength is 2110 nm. The laser threshold is about 820 mW of incident pump power. With the BF filter, a maximum output power of 870 mW is obtained at the incident pump power of 5 W, corresponding to a slope efficiency of 20.3%. The characteristics of output wavelength verse the crystal temperature are also investigated.     

High-power sixth-harmonic generation of an Nd:YAG laser with KBe2BO3F2 prism-coupled devices

High-power sixth harmonic generation from an Nd:YAG laser (10 ns, 10 kHz) has been achieved with a KBe₂BO₃F₂ (KBBF) prism-coupled device (PCD) containing a 1.95 mm thick KBBF crystal. The highest output power reached 120.5 mW at 177.3 nm, and the highest conversion efficiency from 354.7 to 177.3 nm was 1.82%. Moreover, stable sixth harmonic output with an average power of 22.2 mW was produced by another KBBF-PCD, in which the thickness of the KBBF crystal was 1.51 mm. The highest and stable sixth harmonic output powers are improved by about three and six times compared with the previously published results, respectively.     

Femtosecond single-mode diode-pumped Cr:LiSAF laser mode-locked with single-walled carbon nanotubes

A low threshold Cr:LiSAF laser pumped with an inexpensive single-mode laser diode emitting 120 mW was passively mode-locked with a novel ultrafast saturable absorber mirror based on single-walled carbon nanotubes (SWCNT-SAM). Pulses as short as 122 fs were achieved, tunable across 14 nm. A second pump diode coupled in polarization allowed to shorten the pulse duration to 106 fs, with up to 24-mW output power.     

Fundamental and harmonic mode-locking in erbium-doped fiber laser based on graphene saturable absorber

Graphene-based passively mode-locked erbium doped fiber laser is presented. Multilayer graphene was obtained by mechanical exfoliation of pure graphitic block and deposited on the fiber ferrule. The mode-locking performance was investigated under various laser pumping conditions. The laser could operate at fundamental repetition rate of 16.34 MHz with 844 fs pulse duration and 30 mW average output power. Also harmonic-mode locking of the laser is demonstrated. 294 and 800 MHz repetition rates were obtained (corresponding to the 18th and 49th harmonic of the fundamental repetition frequency, respectively) with nearly transform-limited pulses.     

High temperature operation of edge-emitting photonic-crystal distributed-feedback quantum cascade lasers at λ∼7.6 μm

We present large-area, edge-emitting, photonic-crystal (PC) distributed-feedback (DFB) quantum cascade lasers (QCLs) emitting at λ∼7.6 μm and operating up to a heat sink temperature of 80 °C. The lasers use the anticrossing of index- and Bragg-guided dispersions of rectangular lattice to control the optical mode in the wafer plane. Single-mode operation with a high signal-to-noise ratio of about 20 dB and narrow beam divergence of 6.2° was obtained. A high peak power of 630 mW at 20 °C and still more than 160 mW at 60 °C was observed. Such a high performance single-mode device is very important to expand the potential applications in the long-wave infrared range.     

Efficient cw violet-light generation in a ring cavity with a periodically poled KTP

In this work, we experimentally demonstrate an efficient cw second harmonic generation (SHG) at 780 nm wavelength with a first-order type-I phase matching periodically poled KTP (PPKTP) crystal in a ring cavity, the wavelength corresponds to the D₂ line of Rb atom transition. The fundamental laser used is a grating-stabilized external cavity diode laser and its frequency is precisely locked to Rb atom transition frequency using the saturated absorption technique. About maximal 6.9 mW UV radiation of 390 nm with a net conversion of 9.5% at an input mode-matched power of 73 mW is generated with one crystal, and about maximal 8.8 mW with the net conversion of 12% is obtained with another crystal; the powers in stable operation are about 1.7 mW and 3.4 mW, respectively. This is, to our best knowledge, the first SHG experiment at 780 nm wavelength with the PPKTP in a ring cavity.     

A diode end-pumped passively Q-switched Nd:YAG/KTA Raman laser

A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5 mm × 5 mm × 25 mm is used as the Raman active medium and its 234 cm^?1 Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1091 nm Raman laser. A 2 mm thick Cr⁴⁺:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5 W, the first-Stokes power of 250 mW is obtained with a pulse repetition frequency of 14.5 kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2 μJ. Pulse width is measured to be 12.6 ns and peak power is 1.4 kW.     

Low-threshold continuous-wave Tm3+:YAlO3 laser

We describe a continuous-wave, low-threshold Tm:YAlO₃ (Tm:YAP) laser operating at 1945 nm with incident threshold pump powers in the 10–20 mW range. The z-cavity containing a 2-mm-long Tm:YAP crystal with 4 at.% Tm³⁺ concentration was end pumped by a continuous-wave Ti:sapphire laser at 795 nm. Tight focusing of the pump and the laser beams enabled low-threshold operation. The power performance of two different cavity configurations with 5-cm radius (R = 5 cm cavity) and 10-cm radius (R = 10 cm cavity) curved mirrors was tested. The best performance was obtained with the R = 10 cm configuration, where, the incident threshold pump power could be lowered to 10 mW after optimizing the polarization direction of the pump beam and by employing double pumping. Theoretical estimation of the threshold power was in good agreement with the experimental observations. The laser could be further tuned from 1842 to 1994 nm.     

All fiber passively mode locked zirconium-based erbium-doped fiber laser

All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia–Yttria–Alumino-silicate fiber doped with erbium ions (Zr–Y–Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.     

Cavity-dumped electro-optical Q-switched Nd:GdVO4 laser with high repetition rate

We reported a cavity-dumped operation of electro-optical Q-switched Nd:GdVO₄ laser at high repetition rates for the first time. A constant 5.5 ns pulse duration was realized. The maximum average output power was 5.1 W at the highest repetition rate of 50 kHz, corresponding to a peak power of 18.5 kW.     

Passively Q-switched a-cut Nd:GdVO4 self-Raman laser with Cr:YAG

A passively Q-switched a-cut Nd:GdVO₄ self-Raman solid-state laser with Cr:YAG saturable absorber was firstly demonstrated. The first Stokes at 1173 nm was successfully obtained. At the maximum incident pump power, the pulse width was about 1.8 ns and the repetition rate was 27.5 kHz. 586.5 nm yellow laser output was also realized by use of an LBO frequency doubling crystal.     

Single transverse mode control of VCSEL by photonic crystal and trench patterning

Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constants and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.