Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors

The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.     

Fully printed flexible audio system on the basis of low‐voltage polymeric organic field effect transistors with three layer dielectric

Fully mass printed, flexible and truly polymeric organic field effect transistors consisting of a three layer dielectric made of CYTOP (low‐k), PVA (intermediate) and P(VDF‐TrFE‐CTFE)(high‐k) are introduced. Gravure‐, flexo‐and screen printing were selected as highly productive manufacturing technologies. These OFETs work at strongly reduced voltages and show high field effect mobility (µ = 0.2 cm²/Vs) and remarkable good bias stress stability at very high current density (50 µA/mm). Fully printed OFETs are used for the realization of ring oscillators working in the kHz regime at reduced supply voltage (10 V). In combination with printed fully polymeric piezoelectric loudspeakers, this work shows for the first time fully printed flexible audio systems. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1409–1415     

Surface adsorption effects in the inkjet printing of an aqueous polymer solution on a porous oxide ceramic substrate

The inkjet printing of a polymeric solution into a porous substrate was studied, with the focus on phenomena occurring within the pore space during infiltration. Lines of aqueous polyacrylic acid (PAA) solution were printed onto the surface of porous, high-green-density ceramic powder beds. The PAA is a binder for the ceramic particles, allowing removal of the printed line structure ("primitive") and characterization of the extent of polymer penetration. Large differences in cross section of the retrieved printed structure were observed between ceramic systems and for different specific surface area powders. A mechanism for "filtration" of the polymer by adsorption onto the ceramic particle surfaces during infiltration was proposed. The adsorption of PAA onto Al2O3, SiO2, and TiO2 was characterized via adsorption isotherms, and the trend of primitive cross section with PAA adsorption was consistent with the filtration hypothesis, as was the variation with powder-specific surface area. These results can be generalized to other systems where a solution is inkjet printed onto a porous substrate (e.g., inks on plain paper, porous coated papers, etc.) Utilization of the adsorption effects may allow confinement of the solute molecules (e.g., colorant) to a small region near the substrate surface.     

Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thin-film transistors

The synthesis and physicochemical properties of a new class of thiophene/arenesilole-containing pi-conjugated polymers are reported. Examples of this new polymer class include the following: poly(2,5-bis(3',3' '-dihexylsilylene-2',2' '-bithieno)thiophene) (TS6T1), poly(2,5'-bis(3' ',3' '-dihexylsilylene-2' ',2' '-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' '-dioctylsilylene-1' ',1' '-biphenyl)thiophene) (BS8T1), and poly(2,5'-bis(2' ',2' '-dioctylsilylene-1' ',1' '-biphenyl)bithiophene) (BS8T2). Organic field-effect transistors (OFETs) with hole carrier mobilities as high as 0.02-0.06 cm2/V s in air, low turn-on voltages, and current on/off ratios >105-106 are fabricated using solution processing techniques with the above polymers as the active channel layer. OFETs based on this polymer class exhibit excellent ambient operational stability.     

Rational design of diarylethylene-based polymeric semiconductors for high-performance organic field-effect transistors

Constructing planar, rigid, and high electronically delocalized π-conjugated molecular system is the most basic requirements of obtaining high-performance polymeric semiconductors for organic field-effect transistors (OFETs). In this regard, diarylethylene (DAE)-based polymers show great potential because many substantive progresses related to polymer field-effect transistors had been achieved from the kind of polymer materials in recent years. In the brief review, series of DAE-based polymer are highlighted, based on which several design strategies have been summarized by the way of comparative research method. These strategies have important guiding significance not only for further developing new DAE-based and other polymeric semiconductors for OFETs but also for developing specific polymeric semiconductors for other organic electronics, such as organic photovoltaics and organic light-emitting diodes. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 585–603     

An inkjet printing soft photomask and its application on organic polymer substrates

This article presents a simple, fast and low-cost method to fabricate a flexible UV light photomask. The designed micropatterns were directly printed onto transparent hybrid composite film of biaxially oriented polypropylene coated with silica oxide (BOPP-SiO _x ) by an inkjet printer. Compared to the conventional chrome-mask, it is of advantages such as suitable for non-planar substrates, scalable for large area production, and extreme low cost. Combined with the confined photo-catalytic oxidation (CPO) reaction, the printed flexible BOPP-SiO _x photomask was successfully used to pattern the shape of wettability of organic polymer surfaces, and then polyaniline patterns were deposited on the modified substrates with strong adhesion. With the above photomasks, the polyacrylic acid graft chains were duplicated on the poly (ethylene terephthalate) (PET) and BOPP substrates by photografting polymerization. We grafted polyacrylic acid (PAA) on a non-planar plastic substrate with this soft and thin plastic photomask. Scanning electron microscopy (SEM) and optical microscopy were used to characterize the surface morphology and thickness of ink layers of the printed photomask. Optical microscopy was used to characterize the deposition polyaniline micropatterns. It was found that the desired patterns were precisely printed on the modified polymer films and were applied in modifying organic polymer substrates. The printed photomask could be exploited in the fields such as prototype microfluidics, micro-sensors, optical structures and any other kind of microstructures which does not require high durability and dimensional stability.     

高性能双极性聚合物半导体材料与晶体管器件

有机聚合物半导体材料与晶体管器件是融合了化学、材料、半导体以及微电子等学科的前沿交叉研究方向.聚合物半导体材料分子是该领域研究的重要内容,其中双极性聚合物分子半导体材料,兼具了电子和空穴的双重载流子输运能力而受到学术界的广泛关注.本文总结了双极性聚合物半导体材料与器件的研究进展,重点介绍了我们在D-A型双极性聚合物分子半导体材料设计、加工技术与器件制备以及功能应用方面的研究工作,并论述了双极性聚合物分子半导体材料与器件研究过程中存在的科学问题及发展方向.     

Inkjet printing of well-defined polymer dots and arrays

Inkjet printing represents a highly promising polymer deposition method, which is used for, for example, the fabrication of multicolor polyLED displays and polymer-based electronics parts. The challenge is to print well-defined polymer structures from dilute solution. We have eliminated the formation of ring stains by printing nonvolatile acetophenone-based inks on a perfluorinated substrate using different polymers. (De)pinning of the contact line of the printed droplet, as related to the choice of solvent, is identified as the key factor that determines the shape of the deposit, whereas the choice of polymer is of minor importance. Adding 10 wt % or more of acetophenone to a volatile solvent (ethyl acetate)-based polymer solution changes the shape of the deposit from ring-like to dot-like, which may be due to the establishment of a solvent composition gradient. Arrays of closely spaced dots have also been printed. The size of the dots is considerably smaller than the nozzle diameter. This may prove a potential strategy for the inkjet printing of submicrometer structures.     

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Low‐operating voltage, high mobility, and stable organic field‐effect transistors (OFETs) using polymeric dielectrics such as pristine poly(4‐vinyl phenol) (PVP) and poly(methyl methacrylate) (PMMA), dissolved in solvents of high dipole moment, have been achieved. High dipole moment solvents such as propylene carbonate and dimethyl sulfoxide used for dissolving the polymer dielectric enhance the charge carrier mobilities by three orders of magnitude in pentacene OFETs compared with low dipole moment solvents. Fast switching circuits with patterned gate PVP‐based pentacene OFETs demonstrated a switching frequency of 75 kHz at input voltages of |5 V|. The frequency response of the OFETs is attributed to a high degree of dipolar‐order in dielectric films obtained from high‐polarity solvents and the resulting energetically ordered landscape for transport. Remarkably, these pentacene‐based OFETs exhibited high stability under bias stress and in air with negligible shifts in the threshold voltage. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013 , 51, 1533–1542     

掺杂在有机场效应晶体管中的应用进展

有机场效应晶体管(OFETs)作为一种新型的电子器件,以其柔性、可大规模简单制备等优势获得了广泛的关注。 但是,OFETs面临着器件性能不足、调控手段复杂等问题。人们尝试使用掺杂对这些问题加以解决。 本文结合本课题组的相关工作,对掺杂技术在OFETs上的应用进行归纳、总结和展望。     

A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics.Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided.The photo-cross-linker,BBP-4,was added into host polymers by simple solution blending process,which was capable of abstracting hydrogen atoms from polymers containing active C―H groups upon exposure to ultraviolet(UV) radiation.The cross-linking can be completed with a relatively long wavelength UV light(365 nm).The approach has been applied to methacrylate and styrenic polymers such as commercial poly(methylmethacrylate)(PMMA),poly(iso-butylmethacrylate)(Pi BMA) and poly(4-methylstyrene)(PMS).The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films.The bottom-gate organic field-effect transistors(OFETs) through all solution processes on plastic substrate were fabricated.The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.     

Photoresponsive n-channel organic field-effect transistors based on a tri-component active layer

Photoresponsive OFETs were fabricated based on a tri-component active layer (NDI2OD-DTYM2, spiropyran and polystyrene). The results demonstrated that these OFETs displayed photoresponsive feature to alternate UV and vis light due to the photoisomerization of spiropyran between the closed-ring state and ionic open-ring state.     

Low-bandgap conjugated polymers based on benzodipyrrolidone with reliable unipolar electron mobility exceeding 1 cm~2 V~(-1) s~(-1)

The employment of an intrinsic quinoidal building block, benzodipyrrolidone(BDP), on constructing conjugated polymers(PBDP-2F and PBDP-2CN) with high electron mobility and unipolar transport characteristic in polyethylenimine ethoxylated(PEIE) modified organic field-effect transistors(OFETs) is reported. The intrinsic quinoidal characteristic and excellent coplanarity of BDP can lower the lowest unoccupied molecular orbital(LUMO) levels and improve ordered interchain packing of the resulting polymers in solid states, which are favorable for electron-injection and transport. By using PEIE as the interlayer to block the hole injection, unipolar n-type transport characteristics with high electron mobility of 0.58 and 1.01 cm~2 V~(-1) s~(-1) were achieved by the OFETs based on PBDP-2F and PBDP-2CN, respectively. More importantly, the extracted mobilities are highly reliable with the reliability factor of above 80%. To the best of our knowledge, PBDP-2CN is the very first quinoid-based conjugated polymer with reliable electron mobility exceeding 1 cm~2 V~(-1) s~(-1). This work represents a significant step in exploring intrinsic quinoidal CPs for application in n-channel OFETs and logic complementary circuits.     

一种耐高温憎水聚芳醚的合成与性能初步研究

以双酚芴单体和全氟联苯为原料,通过亲核取代反应,在较低温度(120℃)下直接聚合,得到了一种高分子量的含芴部分含氟的聚芳醚,并用1H-NMR进行表征.合成的聚合物具有好的热稳定性,玻璃化温度达到271℃,5%的热失重为420℃.这些聚合物能溶于四氢呋喃、二氯甲烷、氯仿和DMAC等常见的有机溶剂,通过溶液浇注的方法制备出光滑、柔韧的膜,并利用表面接触角(CA)对膜材料的表面性能进行了表征.用氯仿制备膜的接触角为102°,而用四氢呋喃制备膜的接触角为107°,接触角接近聚四氟乙烯(112°),具有较好的憎水性.     

Solution-processed organic field-effect transistors and unipolar inverters using self-assembled interface dipoles on gate dielectrics

Self-assembled monolayers (SAMs) of polarized and nonpolarized organosilane molecules on gate insulators induced tunable threshold voltage shifting and current modulation in organic field-effect transistors (OFETs) made from solution-deposited 5,5'-bis(4-hexylphenyl)-2,2'-bithiophene (6PTTP6), defining depletion-mode and enhancement-mode operation. p-Channel inverters were made from pairs of OFETs with an enhancement-mode driver and a depletion-mode load to implement full-swing and high-gain organic logic circuits. The experimental results indicate that the shift of the transfer characteristics is governed by the built-in electric field of the SAM. The effect of surface functional groups affixed to the dielectric substrate on the grain appearance and film mobility is also determined.     

有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展

有机场效应晶体管(OFETs)是下一代柔性电子产业的基础元件,具有可弯曲、透明、低成本、可溶液加工等优良特性,并逐渐开始应用于生物传感器、柔性显示等领域。 然而,OFETs仍存在如工作电流小、跨导小、开关比低、空气稳定性差等问题,限制了其进一步的发展。 OFETs器件的性能主要受到导电沟道中电荷和电流分布的影响,若能通过外加手段,调控沟道中的电荷和电流分布,可能获得具有更高性能或新机理的器件。 本文结合课题组内的工作,对国内外该领域的最新进展进行综述和展望。     

Monolayer organic field-effect transistors

Monolayer organic field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer films are generally prepared by thermal evaporation, the Langmuir technique or self-assembly process, etc., but their electrical performance is relatively lower than corresponding thick films. From 2011, the performance of monolayer OFETs has been boosted by using the monolayer molecular crystals(MMCs) as active channels, which opened up a new era for monolayer OFETs. In this review, recent progress of monolayer OFETs, including the preparation of monolayer films, their OFET performance and applications are summarized.Finally, perspectives of monolayer OFETs in the near future are also discussed.     

n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups

Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.     

Influence of molecular weight on the short‐channel effect in polymer‐based field‐effect transistors

In this study, we demonstrate how the intrinsic properties of a polymer can influence the electrical characteristics of organic field‐effect transistors (OFETs). OFETs fabricated with three batches of poly[2‐methoxy,5‐(3′,7′‐dimethyl‐octyloxy)]‐p‐phenylene vinylene (MDMO‐PPV) were investigated. The properties of the polymers were initially investigated using Fourier transform infrared spectroscopy (FTIR), impedance spectroscopy (IS), gel permeation chromotography (GPC), and cyclic voltammetry (CV), respectively. The structure and purity of the polymer batches were found to be very comparable, but the molecular weight (M_n and M_w) and polydispersity (PDI = M_w/M_n), varied between the samples and the HOMO and LUMO levels of the polymers were found to depend on the molecular weight properties. OFETs were then fabricated with the polymers and electrically characterized. It was observed that the channel current and the field‐effect mobility increase with increasing polymer molecular weight. The output characteristics of the transistors, on the other hand, were found to depend on the PDI of the polymer. Saturation of the channel current occurs at higher source–drain voltages and short‐channel behavior was observed to start at longer channel lengths for polymers with a higher PDI. This behavior is observed to be thickness dependent, and the short‐channel behavior was more pronounced for thicker MDMO‐PPV films. These results are explained in terms of influences of chain packing and ordering and high bulk currents on the FET output and transistor parameters. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 50: 117–124, 2012