Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors |
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Authors: | Min-Hoi Kim Chang-Min Keum |
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Institution: | School of Electrical Engineering, Seoul National University, Seoul, Korea (ROK) |
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Abstract: | The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs. |
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Keywords: | organic field-effect transistor gate insulator interface patterned dielectric nonvolatile memory |
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