Separate Mott and liquid-gas transitions in a coulomb gas: Photoexcited germanium

The phase diagram of photoexcited electron-hole (e-h) pairs, which are confined to a strain well in stressed Ge, is investigated via measurements of energy spectra and spatial distributions of e-h recombination luminescence. Above a triple-point temperature of 3.7 ± 0.2K, a Mott (metal-insulator) transition is observed at lower densities than the liquid-gas (LG) transition. The measured critical temperatures of the Mott and LG transitions are 6.5 ± 0.5K and 4.5 ± 0.2K respectively.     

Decay and recondensation of electron-hole liquid in germanium under CO2 laser pulse irradiation: Investigation by microwave conductivity measurements

In microwave conductivity investigations of photoexcited germanium at low temperatures under CO₂ laser pulse irradiation the evaporation of EHL and e-h plasma formation have been observed. This plasma irreversibly vanishes at high CO₂ laser intensities I_CO2 >4 × 10⁵ W cm^?2 but recondenses at low intensities. It was found that complete and irreversible disappearance of EHL is due to the e-h plasma throw out to the crystal boundaries by phonon wind, generated in 10.6 μm radiation absorption whereas at I_CO2 > 10⁶ W cm^?2 it is connected with the crystal lattice heating over the condensation critical temperature. A theoretical analysis of the CO₂ laser produced phonon wind interaction with e-h plasma is briefly presented. By comparing with experimental data on recondensation process the phonon wind efficiency is estimated.     

Time resolved luminescence of CdS at high excitation

We report a study at low temperature of the time resolved luminescence of CdS, excited by two photon absorption. Concerning the so called EHP-LO and P bands, we confirm our results previously obtained on CdSe[1, 2]. (a) At high excitation a broad band (peak position at λ > 495 nm) occurs due to radiative recombination in an electron hole plasma, assisted by the emission of one LO phonon. (b) The simultaneous kinetics of the P line (λ ? 490.5 nm) and A-LO line (λ ? 492.5 nm) are conflicting with the interpretation of the P line as resulting of radiative exciton-exciton collisions. We interpret the P line as due to biexciton recombination.We have studied the luminescence in the (I₂-I₁) region (486nm < λ < 490nm) at low excitation. We observe clearly the following, (a) A broad band (488 nm < λ < 490.5 nm) which corresponds to the gain observed in previous experiments of pulse and probe spectroscopy and interpreted as direct recombination in an electron hole liquid (EHL). (b) After the disappearance of the EHL band, one single line (M_D), which shifts continuously towards the I₂ position during the time resolved kinetics. We suggest it to be connected with the high excitation effect on donor impurities (bound polyexcitons).     

Electron-hole plasma generation and evolution in semiconductors

We discuss various physical problems related to dense electron-hole (e-h) plasmas in silicon-like semiconductors such as: the e-h plasma energy in the quantum and classical limits including the actual band structure; the dielectric constant using the appropriate plasma frequency mass and the variation of the plasma relaxation time due to e-h collisions; the plasma generation including its nonlinear aspect when the e-h density passes the plasma frequency density of the pump beam; the e-h plasma evolution due to Auger recombination and impact ionization as well as the e-h plasma hydrodynamics; finally, we will discuss also the possibility of a very fascinating melting at T=0.     

Fast luminescence processes in KI : In caused by excitation in the a absorption band

The temperature dependence of the decay time (τ) of the luminescence pulses from the 440 nm emission band as well as the rise time (τ_R) of luminescence pulses from the 575 nm emission band has been investigated for KI : In by pulsed light excitation in the A absorption band. From the agreement of τ and τ_R independent of the temperature it can be concluded that the X minimum on the ³T₁₄ adiabatic potential energy surface (APES) is mainly populated by a radiationless transition from the tetragonal T minimum of the same APES.Furthermore, a comparison of parameters for the impurity centre luminescence corresponding to the tetragonal emission band in KI : In and KI : Tl has been drawn.     

Luminescence properties of potassium aluminoborate glasses with copper(I) ions at cryogenic temperatures

Luminescence spectra of potassium aluminoborate glasses with copper(I) ions have been recorded in the temperature range from +20 to ?196°C. It is shown that a decrease in the glass temperature gives rise to thermochromic luminescence, which manifests itself as a red shift of the luminescence band, a value of which reaches 95 nm. This spectral shift is accompanied by a decrease in the luminescence-band amplitude by 30%.     

Coulomb effects on the gain and absorption spectra of the electron-hole plasma in GaAs

Many-body effects due to electron-hole (e-h) attraction and self-energy corrections are investigated on gain and absorption line shapes of degenerate e-h plasma in direct-gap semiconductors. It is demonstrated for GaAs that a large enhancement in experimental gain and absorption coefficients near crossover, which is not reproduced in single-particle treatments, is accounted for by the excitonic e-h interaction. The self-energy corrections, containing the renormalization due to e-e and e-phonon interactions, reduce the direct band gap in GaAs. Their weak $\text{k}$ dependence further improves agreement with experiment.     

Carrier dynamics in GaN at extremely low excited carrier densities

Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor–acceptor pair recombination and conduction band–acceptor recombination in yellow luminescence band formation.     

The kinetics of exciton photoluminescence in mercuric iodide

Time-resolved photoluminescence (TRPL) of red mercuric iodide single crystal is measured at low temperatures and its two-photon luminescence is measured at room temperature. Sharp near band-gap luminescence is observed around 530 nm and was ascribed to radiative annihilation of free and bound excitons; the phonon replica of exciton luminescence are found between 533 and 540 nm at low temperatures. TRPL experiment reveals that near band-gap luminescence comprises fast and slow decay components and shows the different relaxation processes between free and bound exciton annihilation. Luminescence of bound excitons steeply lowers with increasing temperature and disappears about 40 K. A luminescence tail band is observed around 540 nm that is ascribed to defects in the anion sublattice. The temporal behavior of the tail band is described by rate equations very well. A broad luminescent band appears at 630 nm. The decay curves suggest that the luminescence is ascribed to the radiative recombination of donor-acceptor pairs and there are two kinds of mechanisms to control the decay. At room temperature, a luminescent band appears at the band-gap region, which shows the band-gap at room temperature is about 2.125 eV.     

Creation of electronic excitations and defects by vuv radiation (6-40 eV) in wide-gap solids

The processes of multiplication of electronic excitations (MEE), connected with the creation of secondary excitons or electron-hole (e-h) pairs by hot conduction electrons, are realized in wide-gap metal halides and oxides. In oxides, secondary e-h pairs can be also formed by 27-40 v eV photons due to L 1 VV Auger transitions (with the participation of 2s oxygen holes). The excitation spectra of luminescence and the creation spectra of electron F centres or hole V centres have been measured for Na 6 Al 6 Si 6 O 24 (NaI) 2x sodalites and MgO:Be, respectively, at 8-80 v K. A high local density of excitations has been revealed under MEE conditions in KBr and Br sodalites with self-trapping excitons and holes.     

Fermi edge polaritons in a microcavity containing a high density two-dimensional electron gas

Sharp, near band gap lines are observed in the reflection and photoluminescence spectra of GaAs/AlGaAs structures consisting of a modulation doped quantum well (MDQW) that contains a high density two-dimensional electron gas (2DEG) and is embedded in a microcavity (MC). The energy dependence of these lines on the MC-confined photon energy shows level anticrossings and Rabi splittings very similar to those observed in systems of undoped QW's embedded in a MC. The spectra are analyzed by calculating the optical susceptibility of the MDQW in the near band gap spectral range and using it within the transfer matrix method. The calculated reflection spectra indicate that the sharp spectral lines are due to k{ parallel}=0 cavity polaritons that are composed of e-h pair excitations just above the 2DEG Fermi edge and are strongly coupled to the MC-confined photons.     

Recombination centers in TlBr

Luminescence from TIBr single crystals at low temperature has been investigated using continuous X-ray and UV excitation as well as pulsed-electron-beam excitation. Four emission bands were observed consistently at 495, 504, 560 and 650 nm, with relative intensities dependent on sample preparation, mode of excitation and measurement temperature. The 560 nm band is shown to be associated with excess thallium at the sample surface. Deformation of the crystal at low temperature (e.g. 9°K) produces recombination centers giving rise to the 504 nm and 650 nm luminescence. Subsequent annealing at temperatures of the order of 120°K causes a decrease in the 504 nm luminescence and the simultaneous appearance of the 495 nm band. These observations are interpreted in terms of the thermal release of recombination centers from the vicinities of the dislocations where they are generated.     

溶胶-凝胶法制备Ce3+掺杂纳米SiO2材料光致发光研究

通过溶胶-凝胶技术制备了掺杂Ce^3＋离子的纳米SiO2材料,并经较低温度下煅烧,研究其光致发光（PL）性能。X射线衍射（XRD）及透射电子显微镜（TEM）测试结果表明该纳米材料具有非晶态结构,颗粒尺寸为20～30nm。对其光致发光谱的测定显示：经450℃低温煅烧,未掺杂SiO2样品的光致发光谱明显为多峰的宽带结构,而微量Ce^3＋掺杂的样品在230nm激发下存在着唯一的一个很强的、主峰位于346nm左右的紫外发光峰,与未掺杂SiO2及Cu^2＋掺杂SiO2样品的比较表明该发光峰并非常见的Ce^3＋离子的d-f跃迁产生的特征发光带,而是起源于SiO2中的某种本征缺陷中心。通过不同煅烧温度以及不同Ce^3＋离子掺杂量对346nm发光峰强度的影响,讨论该发光峰起源可能的结构模型。     

Stress dependence of electron-hole liquid parameters in silicon

The electron-hole liquid recombination luminescence in silicon is studied as a function of stress up to corresponding valence band splittings of 30 meV for <100>- and <111>-stress directions. EHL densities and exchange-correlation energies as obtained from lineshape fits are in general agreement with recent theoretical data. Systematic deviations in detail, however, indicate that - contrary to simplifying theoretical assumptions - a band structure dependence of the exchange and correlation energy E_xc has to be taken into account.     

Temperature-induced transformations in hydrogenated and fluorinated single-wall carbon nanotubes studied by Raman scattering

Raman spectra of hydrogenated and fluorinated single-wall carbon nanotubes (SWCNTs) are measured at ambient temperature before and after heat treatment. The spectra of the as-prepared hydrogenated SWCNTs show a giant structureless band in the visible region that screens the Raman peaks related to the carbon atom vibrations. The onset of this strong band follows the excitation laser line, which is typical of hot luminescence. The intensity of the luminescence background decreases exponentially with the annealing time, while the dependence of the luminescence decay time constant on the annealing temperature is of the Arrhenius type with the activation energy E _a = 465 ± 44 meV. The luminescence background in the Raman spectra of the fluorinated SWCNTs is comparable with the Raman peak intensity and decreases exponentially with the annealing time. The dependence of the decay time constant on the temperature is again of the Arrhenius type with the activation energy E _a = 90 ± 8 meV. The appearance of hot luminescence is related to the upshift of the fundamental energy gap in functionalized SWCNTs and the structural disorder induced by random binding of hydrogen or fluorine atoms. The luminescence background disappears upon annealing in vacuum or in air after removal of hydrogen (fluorine), while the annealed samples still demonstrate large structural disorder.     

X‐ray‐excited optical luminescence and X‐ray absorption fine‐structures studies of CdWO4 scintillator

X‐ray‐excited optical luminescence (XEOL) emission and excitation spectra as well as the EXAFS signal of CdWO₄ were measured in the energy region of the Cd and W absorption edges. From EXAFS refinement, structural parameters such as number of atoms, distance from the absorbing atom and width of coordination shells in the W neighborhood were determined. The role of W–O interactions on the intrinsic luminescence of CdWO₄ is discussed. The efficiencies of conversion, transfer and emission processes involved in the scintillation mechanism showed to be high when self‐trapped excitons are formed locally by direct excitation of W ions. Annihilation of these excitons provides the characteristic scintillation of CdWO₄, a broad band emission with maximum at 500 nm. The presence of two energetically different O positions in the lattice gives rise to the composite structure of the luminescence band, and no influence of extrinsic defects was noticed. A mismatch between the X‐ray absorption coefficient and the zero‐order luminescence curves corroborates that the direct excitation of Cd ions induces secondary electronic excitations not very effective in transferring energy to the luminescent group, WO₆.     

On luminescence stimulated from deep traps using thermally-assisted time-resolved optical stimulation in α-Al2O3:C

We report a study of charge transfer mechanisms of electrons stimulated optically from very deep traps, also known as donor traps, in α-Al₂O₃:C. The investigations were carried out using thermally-assisted time-resolved optical stimulation, thermoluminescence and by way of residual thermoluminescence from the main electron trap. When the charges are optically stimulated from the deep traps, they are redistributed via the conduction band to the main electron trap and the shallow trap from where they are optically or thermally released for recombination at luminescence centres. The luminescence is strongly quenched at high measurement temperature as evident by very short luminescence lifetimes at these temperatures. The main peak due to residual thermoluminescence is located at a higher temperature than the conventional main peak.     

红色Bi4 Ge3 O12晶体在低温下的发光性能

用下降法制备了Bi₄Ge₃O₁₂晶体,发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi₄Ge₃O₁₂晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi₄Ge₃O₁₂在1 150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs。     

CsPbBrI2量子点制备及其光探测器性能

采用热注入法制备空气稳定性良好的CsPbBrI2量子点,以375 nm的脉冲激光作为激发光源研究其光致发光性能.通过旋涂的方式制备相应薄膜,将其作为光敏层应用到光探测器,并对器件的光电子性能和稳定性进行详细研究.结果表明:CsPbBrI2量子点在635nm附近有强烈的荧光效应,光谱发光峰较窄,半峰宽约为35 nm.CsPbBrI2量子点禁带宽度为1.90eV,制备的探测器光检测带宽从紫外光260nm到红光650 nm,光响应度为0.26 A/W,高开/关比高达104,上升/衰减时间为3.5 ms/3.5 ms.在25℃,湿度在25%~35%大气环境下存储60天,性能与初始值相比几乎没有变化.CsPbBrI2量子点具有优异的稳定性、可制备高性能的宽带光检测和易于制造等优点,具备一定的应用前景.     

Macroscopic Quantum State in Optically Driven Semiconductors: Crossover from Electron-Hole BCS to Exciton Bose Condensation

Luminescence spectra from high-density electron-hole ( e-h ) systems at zero temperature are studied. The calculated spectra clearly show the crossover between the e-h BCS state and the exciton Bose-Einstein condensate; this behavior analyzed neither with the BCS-like mean-field theory nor with the interacting Boson model. The strong phase fluctuation associated with the center-of-mass motion of e-h pairs is considered with the generalized random phase approximation combined with the Bethe-Salpeter equation for e-h pairs. The calculated spectra show that the broad spectral components from the e-h BCS state splits into P- and P 2 -lines with decreasing e-h density. The calculated density dependence of the band-gap renormalization excellently agrees with experiments for CuCl and ZnO.