Absolute sign of the Mu* hyperfine parameters in diamond

Standard μSR experiments in diamond have shown that the relative sign of the hyperfine parameters of the anisotropic Mu^* state is negative (A _‖/A _⊥<0). We report an experimental determination of theabsolute sign of the Mu^* hyperfine parameters by studying the transferred muon polarization during the thermally-activated transition from the isotropic Mu state to Mu^*. The results demonstrate that the isotropic part of the Mu^* hyperfine interaction is negative. In a nitrogen-poor diamond, both the Mu disappearance rate and the enhancement of the Mu^* signals are well-described by a single Arrhenius law.     

Muon/muonium surface interactions

The interactions of muonium (μ ⁺ e ⁻, Mu) with the surfaces of fine silica powders have been extensively studied using zero, longitudinal and transverse field μSR techniques. These studies indicate diffusion and trapping behavior of the Mu atoms on the silica surface, which is strongly influenced by the surface hydroxyl (OH) concentration. Specifically, the presence of the surface OH groups is observed to inhibit the surface mobility of the Mu atoms at low temperatures. Information provided by zero and longitudinal field data suggest a random anisotropic distortion of the Mu hyperfine interaction (RAHD) as the principal relaxation mechanism. A recently developed RAHD spin relaxation theory is used to interpret these data. Additional investigations, using platinum loaded silica, have yielded the first observed surface reaction of Mu. Studies of the interactions of positive muons with surfaces have been also extended to single crystals, where low energy (<10 eV)μ ⁺ andMu ⁻ ions are observed to be reemitted from some materials (e.g., the <100> surface of lithium fluoride). Future applications of these emission phenomena toward the development of a slow^847-3 (or Mu⁻) beam are considered.     

Final states in Si and GaAs via RF μSR spectroscopy

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu^* states at any temperature. However, our results on the diamagnetic final state (μ _f ⁺ ) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu^* and Mu. We observe a full μ _f ⁺ fraction at 317 K when the Mu relaxation rate is above 10 μs⁻¹. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu^* and Mu to a μ⁺ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively.     

Hyperfine interactions of muonium and hydrogen in semiconductors: Cluster calculations

The electronic structure of muonium (Mu) located at different interstitial sites of the silicon crystal is calculated by the complete neglect of differential overlap (CNDO) and intermediate neglect of differential overlap (INDO) methods. Calculations of the electronicg- and hyperfine interaction tensors of the impurity atom are performed. The results obtained are compared with the experimental properties of both “normal” (Mu′) and “anomalous” (Mu^*) muonium centers. It is shown that the most likely dynamic model for Mu′ is that in which neutral Mu diffuses rapidly in the silicon lattice, whereas for Mu^* it is the model wherein interstitial Mu is located at the bond-center site. A correlation is made between the characteristics of the hydrogen-bearing Si-AA9 center, recently observed by EPR in a silicon crystal, and those of Mu^*. The Si-AA9 center is shown to be a hydrogen-bearing paramagnetic analogue of the Mu^* center.     

Quantum diffusion of muonium in insulators

In this paper we review our recent experiments conducted at TRIUMF on muonium diffusion in alkali halides. First, the technique of longitudinal-field muonium spin relaxation (T ₁) due to nuclear hyperfine interaction, an indispensabletour de force for the present work. is described. It is demonstrated in KCl that the technique provides spectacular sensitivity for muonium diffusion as well as determining the average nuclear hyperfine coupling constant. The muonium hop rate shows a minimum (T ^*≃80 K) and steep increase with decreasing temperature. The result is compared with the current theory of quantum diffusion in non-metallic crystals. A few more sets of new data may be presented for other alkali halides. In addition, we show that muonium forms a delocalized state in NaCl as evidenced by a large change of the average nuclear hyperfine parameter. Related topics of local tunneling system may be briefly reviewed.     

Muonium states in semiconductor crystals: Quantum-chemical calculations

The electronic structure of muonium (Mu) located at the bond-centered sites of the silicon and diamond crystals is calculated by the intermediate neglect of differential overlap method. Calculations of the electronicg- and hyperfine interaction tensors of the impurity atom are performed. The results obtained are compared to the experimental properties of “anomalous” muonium Mu^*. It is shown that the properties of Mu located at the bond-centered sites of the Si and C lattices are in qualitative agreement with the observed properties of Mu^*.     

Muon spin rotation experiments on a silicon crystal doped with13C

A crystal of silicon doped with carbon enriched to 60.1% in¹³C was studied bySR to determine whether¹³C hyperfine structure could be observed in the frequency spectra of normal muonium, Mu, or anomalous muonium, Mu^*. Measurements at 100 G and 100 K with 40 million good events yielded extremely weak Mu^* signals and no Mu in these data or in measurements at 10 G and 150 K. Transmission electron micrographs of this sample contained small regions showing strain contrast and structure factor contrast. Annealing the sample at 900°C for 84 hours led to featureless electromicrographs. SubsequentSR measurements yielded a strong Mu^* signal but still no Mu. No broadening due to¹³C was observed.     

Muon/Muonium in an Isotopically Pure 13C Diamond

A preliminary study of the diamagnetic (μ_d) and the paramagnetic (Mu _T ) states in a synthetic ¹³C diamond has been performed using the Transverse Field Muon Spin Rotation method. This system could be used to verify the quantum diffusion behaviour observed before, however, with a more reliable extraction of the hopping rate. The results were obtained in an applied magnetic field of 7.5 mT and at sample temperatures of 10 K, 100 K and 200 K. The prompt fraction, f, of the μ_d state remains constant at 22(5)% in the range 10–200 K; that of the Mu _T state increases from 53(10)% at 10 K to 78(10)% at 200 K. The fractions of the two states add to 100% at 200 K, suggesting non-population of the bond-centred state, Mu_BC, which is often observed in other diamond samples. The μ_d state has a spin relaxation rate of 0.20(5) μs⁻¹, in contrast to the zero value obtained in type II diamond samples. This indicates appreciable interaction of the μ_d state with the ¹³C atoms. The Mu _T state has a large spin relaxation rate ranging from 3.0(5) μs⁻¹ at 10 K to 7.0(5) μs⁻¹ at 200 K, consistent with values obtained in diamond samples with defects. This work is part of ongoing studies of muon/muonium-defect interactions in diamonds. This revised version was published online in September 2006 with corrections to the Cover Date.     

Addition and spin exchange rate constants by longitudinal field μSR: The Mu+NO reaction

The addition reaction Mu+NO+M→MuNO+M and the spin exchange reaction Mu(↑) +MO(↓)→Mu(↓)+NO(↑) have been measured by longitudinal field μSR at room temperature in the presence of up to 58 atm of N₂ as inert collider. The pressure dependence of the longitudinal relaxation rate due to the addition reaction (λ_c) demostrates that the system is still in the low pressure regime in this pressure range. The corresponding termolecular rate constant has been determined ask _0,Mu =(1.10±0.25)×10⁻³² cm⁶ molecules⁻² s⁻¹, almost 4 times smaller than the corresponding H atom reactionk _0,H=3.90×10⁻³² cm⁶ molecules⁻² s⁻¹ [I.M. Campbell et al., J. Chem. Soc. Faraday Trans. 1.71 (1975) 2097]. The average value of the spin exchange rate constants in the 2.5–58 atm pressure range,k _SE=(3.16±0.06)×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, is in good agreement with previous values obtained by transverse field μSR [D.G. Fleming et al., J. Chem. Phys. 73 (1980) 2751].     

Muonium states in silicon carbide

Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ ⁺ e⁻). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a single crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu^* state in diamond and silicon.     

Shallow-Donor Hydrogen-Like Impurities in ZnO Studied by MuSR

Two species of Mu centers with extremely small hyperfine parameters have been observed in single crystalline ZnO below 40 K. Both Mu centers have an axial symmetric hyperfine structure along with the [0001] axis, indicating that they are located at AB_O,∥ and BC_∥ sites. It is inferred from their small ionization energy (≃6 meV and 50 meV) and hyperfine parameters (∼10⁻⁴ times the vacuum value) that these centers behave as shallow donors, strongly suggesting that hydrogen is one of the primary origins of n type conductivity in as-grown ZnO. This revised version was published online in September 2006 with corrections to the Cover Date.     

Interaction of Muons with H2/H3-Centres in Diamond

We report on transverse field muon spin rotation measurements on a nitrogen-rich type Ia diamond, both before and after the conversion of some of the aggregated nitrogen centres to nitrogen-vacancy complexes known as H2/H3-centres. The prompt fractions f and the spin relaxation rates λ were determined for the diamagnetic (μ_d) and the paramagnetic (Mu_T) states in the temperature range 10–300 K. The production of the nitrogen-vacancy complexes had little effect on the parameters of the Mu_T state for which f and λ remained unchanged at approximately 30% and 4 μs⁻¹, respectively. For the μ_d state, on the other hand, the formation of the H2/H3-centres resulted in an increase of the prompt fraction from 10(2)% to 20(3)%, and (for the first time) the spin relaxation rate showed a non-zero value of 0.020(3) μs⁻¹. These results show evidence of strong μ_d interactions with the nitrogen-vacancy complexes in diamond, and suggest a more complex structure for this state than a bare μ⁺. This revised version was published online in September 2006 with corrections to the Cover Date.     

RF-μSR study of muonium charge states and dynamics in Si

The radio frequencySR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu^* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 10¹¹ to 10¹⁵ cm^–3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu^* and Mu to a bond centered ⁺ followed at high temperature by charge exchange involving Mu.     

Negative muon spin precession in ferromagnetic iron and the hyperfine anomaly

The hyperfine field (B _μ ^hf ) at the negative muon μ⁻ in ferromagnetic iron was investigated by means of the zero-field μ⁻ spin precession technique. In the temperature range 320–690 K,B _μ ^hf for μ⁻ Fe departs from the magnetization curve of pure iron in the same way as the hyperfine field seen by a⁵⁵Mn impurity in dilute MnFe measured by NMR. The hyperfine anomaly for μ⁻ Fe relative to dilute (1.5 at.%)⁵⁵Mn in iron is found to be −0.9(3)% and temperature independent over the temperature range investigated.     

Equivalent states of muonium and implanted hydrogen in silicon (experiment)

Main experimental data on the hydrogen-like states with an anisotropic hyperfine structure forming in silicon single crystals in the implantation of high energy muons and protons are presented. The characteristics of the “anomalous” muonium (Mu^*) and hydrogen-containing silicon AA9 states studied by the muon spin rotation (μSR) and ESR techniques in silicon with a due inclusion of the isotope effect are shown to be similar, thus suggesting the existence of two equivalent structures in silicon, Mu^* and AA9, differing only in the mass of the paramagnetic center.     

Magnetic Moment of the 3/2− Ground State of 185W

Nuclear magnetic resonance measurement have been performed for ¹⁸⁵W oriented at 8 mK in an Fe host. The magnetic hyperfine splitting frequency at an external magnetic field of 0.1 T was determined to be 196.6(2) MHz. With the known hyperfine field of B _hf = −71.4(18) T, the nuclear magnetic moment of ¹⁸⁵W is deduced as μ(¹⁸⁵W) = +0.543(14) μ_N.     

Spin-orbit coupling,spin-lattice relaxation,and spin-memory studies ofF-center-molecular-ion pairs in alkali halides

Summary The spin-orbit parameter Δ, spin-lattice relaxation timeT ₁, and spin-mixing parameter ɛ ofF _H(OH⁻) andF _H(CN⁻) centers in several alkali halides have been studied with magnetic circular dichroism at ∼2 K. A close comparison of the experimental results before and after optically induced association of theF center with the molecular ion has been made. In crystals of NaCl structure the negative spin-orbit parameter Δ changes little betweenF andF _H centers in the same host. For CsCl and CsBr two values of Δ have been derived forF _H(CN⁻) centers with axis parallel or perpendicular to the magnetic field. In all studied systems, the spin-lattice relaxation timeT ₁ is already shorter before aggregation compared toF formation. The spin-mixing parameter ɛ decreases slightly forF _H(OH⁻) compared toF centers, while it increases drastically forF _H(CN⁻) defects and reaches its maximum possible value ɛ=0.5 in cesium halides. First attempts to interpret these magneto-optical results will be presented. In honour of Prof. Fausto Fumi on the occasion of his retirement from teaching.     

The transition from Mu to Mu* in diamond

Evidence is presented for a transition from the isotropic muonium state (Mu) to the [111] axially symmetric anomalous muonium state (Mu^*) in diamond. Amplitude measurements for Mu^* in a powder in zero field and with a single crystal oriented in a magnetic field indicate that such a transition occurs with a temperature-dependent rate(T) and that the electron polarization is conserved during the transition. The possibility of determining the absolute sign of the Mu^* hyperfine parameters is discussed.     

First-Principles Theory of Muon and Muonium Trapping in the Protein Chain of Cytochrome c and Associated Hyperfine Interactions

The microscopic details of the electron transfer in cytochrome c (cyt c) are being investigated by the Muon Spin Relaxation (μSR) technique. We are using the Hartree–Fock Cluster Procedure to determine the most likely trapping sites for μ⁺ and muonium (Mu) in the protein chain, and have performed extensive calculations in single amino acid molecules of the protein chain of cyt c. The double-bonded oxygen atom of the carboxyl group was identified as the trapping site for both μ⁺ and Mu. Utilizing the wave functions we obtained from the Hartree–Fock calculations, we have determined the hyperfine field that the μ⁺ in Mu experiences while the latter is trapped at the oxygen. This revised version was published online in September 2006 with corrections to the Cover Date.     

Temperature dependence of the muon and proton hyperfine constants of an \alpha‐muonium‐substituted methyl radical

Muon hyperfine constants A_μ have been measured by transverse field μSR for (CH₃)₃Si\mbox\.CHMu in hexane from 167 K to 332 K. In addition, avoided level‐crossing resonance was used to determine \alpha‐proton coupling constants A_p over a similar range of temperatures. The two hyperfine constants can be described by a common temperature dependence, d|A_i|/ dT=1.4\times 10^-3 MHz\,K^-1, where A_i represents A_p or the reduced muon constant A^\prime_μ=0.3141A_μ. There is a small isotope effect (A^\prime_μ is 2.2 % larger than A_p) consistent with zero‐point motion in the anharmonic C–H bond stretch. The common temperature dependence is tentatively attributed to a coupled deviation of the C–H and C–Mu bonds out of the nodal plane of the p orbital containing the unpaired electron. This revised version was published online in August 2006 with corrections to the Cover Date.