基于SESAM被动调Q的激光二极管泵浦Yb∶CaYAlO_4脉冲激光器

采用发射波长约为976 nm的半导体激光器作为泵浦源,Yb~(3+)掺杂浓度为1. 5at.%、通光长度为2 mm的Yb∶CaYAlO_4晶体作为增益介质,本文提出了一种基于半导体可饱和吸收镜(SESAM)被动调Q的激光二极管泵浦Yb∶CaYAlO_4以获取稳定脉冲输出的方案。通过合理设计谐振腔,实现了稳定的被动调Q激光脉冲输出,并分析了泵浦功率的大小对输出脉冲的重复频率、脉冲宽度、单脉冲能量以及脉冲峰值功率的影响。     

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.     

LD-pumped 1.34 μm-Q-switched and mode-locked Nd:GdVO4 laser by a V3+:YAG saturable absorber

A diode-pumped passively Q-switched and mode-locked Nd:GdVO₄ laser at 1.34 μm with V³⁺:YAG as the saturable absorber is realized in a V-type folded cavity. About 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The width of the mode-locked pulse is estimated to be less than 280 ps with 200 MHz repetition rate within an about 980 ns-long Q-switched pulse envelope. A maximum output power of 200 mW and Q-switched pulse energy of 5.7 μJ is obtained.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

基于WS2可饱和吸收体的脉冲激光器研究

利用WS₂的可饱和吸收特性,在激光二极管侧面抽运Nd:YAG固体激光器Z型腔结构中分别实现了被动调Q和被动调Q锁模运转。实验表明:当泵浦电流为9.5 A时,开始启动调Q运转,当泵浦电流大于9.8 A时,调Q激光脉冲趋于稳定。当泵浦电流为12.8 A时,被动调Q输出的最大平均功率为466 mW,最窄脉冲宽度为3.205 μs,对应的重复频率为71.70 kHz,此时最大单脉冲能量为6.5 μJ。当泵浦电流达到13.4 A时,激光器实现调Q锁模运转。调Q锁模的最高输出功率为590 mW,调Q包络频率为71.98 kHz,单个调Q包络内的脉冲串重复频率123.1 MHz,每个调Q包络中包含369个脉冲,单脉冲能量为22.2 nJ。结果表明WS₂材料可以作为可饱和吸收体用于固体激光器中。     

Control of the pulse duration in a diode-pumped passively Q-switched intracavity frequency-doubling laser

Different techniques to control the pulse duration of a diode-pumped passively Q-switched intracavity frequency-doubled laser are studied, which shows that varying the pump beam radius in the gain medium and mode-spot sizes on a saturable absorber are two efficient ways to control the pulse duration. The output pulse durations obtained from a diode-pumped passively Q-switched Nd:GdVO₄/KTP laser with a GaAs wafer can be controlled in a wide range over 100 ns, which indicates a simple way of controlling the pulse duration of the intracavity frequency-doubled passively Q-switched laser.     

Control of the pulse width of a laser-diode end-pumped passively Q-switched solid-state laser

We theoretically and experimentally study different techniques to control the pulse width of a laser-diode-pumped passively Q-switched solid-state laser. It is shown that varying the laser beam radius in the saturable absorber and the pump beam radius in the gain medium provide an efficient means to control the pulse width. The experiments performed on a laser-diode-pumped Nd:YVO₄ laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber are consistent with the theoretical calculations obtained from the rate-equations model, in which the intracavity photon density is assumed to be Gaussian spatial distribution, and the longitudinal variation of the intracavity photon density and the pump beam spatial distribution are also considered.     

Optimization of passively Q-switched and mode-locked laser with Cr:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with Cr⁴⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively QML laser are determined for the first time. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. The optimal calculations for a diode-pumped passively QML Nd:GdVO₄ laser with Cr⁴⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Multi-watt Q-switched Nd:YVO_4 laser with GaAs output coupler

A passively Q-switched operation of a diode-pumped Nd.YVO_4 laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveQ-switching dynamics of GaAs is presented.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

Numerical solutions of diode-pumped dual-loss-modulated Q-switched and mode-locked green laser with acousto-optic modulator and Cr: YAG saturable absorber

By considering the influence of the acousto-optic (AO) modulator and the nonlinear loss due to harmonic conversion in the intra-cavity frequency-doubling laser, a developed rate equation model for diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:LuVO₄/KTP green laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. With this developed model, the pulse width, single-pulse energy and the other dual-loss-modulated QML green laser characteristics are numerically simulated. The simulation results show that the turnoff time is of great importance for the pulse energy and pulse width of the Q-switched pulse. A diode-pumped dual-loss-modulated QML Nd:LuVO₄/KTP laser is constructed to successfully demonstrate the numerical simulation application.     

Theoretical and experimental study of a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO4/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber

By considering the Gaussian transversal and longitudinal distributions of the intracavity photon density as well as the walk-off effect of KTP crystal, the coupled rate equations of the doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber are given. These equations are solved numerically and the doubly Q-switched green laser characteristics, such as the pulse width and the pulse symmetry, have been obtained. In the experiment, a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with AO and GaAs is presented. This doubly Q-switched green laser can generate the almost absolutely symmetric pulse profile with the shorter pulse width and the higher power than the singly Q-switched green laser. The experimental results are in agreement with the theoretically numerical calculations.     

Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 μJ and 0.58 kW, respectively.     

Doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO4/KTP green laser with AO and GaAs

By simultaneously using both active and passive Q-switches in the same cavity, a diode-pumped doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs semiconductor saturable absorber is realized. A comparison between c-cut and a-cut Nd:GdVO₄ crystals shows that the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate narrower pulse and higher peak power when the incident pump power is higher than 4.4 W. In addition, the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate more symmetric and shorter pulse in comparison with singly AO- or GaAs-Q-switched laser. The coupled rate equations are used to simulate the process of these lasers.     

Laser–diode-pumped passively Q-switched Nd:NaY(WO4)2 laser with GaAs saturable absorber

A laser–diode-pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

Theoretical and experimental study of a diode-pumped doubly Q-switched Nd:GdVO4 1.34 μm laser with acousto-optic (AO) modulator and V:YAG saturable absorber

A diode-pumped doubly Q-switched c-cut Nd:GdVO₄ laser at 1.34 μm with acousto-optic (AO) modulator and V³⁺:YAG saturable absorber is demonstrated. This doubly Q-switched laser can generate shorter pulse width and higher peak power than the singly Q-switched laser only with an AO modulator or a V³⁺:YAG saturable absorber. By considering the thermal lens effect of the laser gain medium, the coupled rate equations for the doubly Q-switched laser at 1.34 μm under Gaussian approximation are given. The numerical solutions of the equations are in agreement with the experimental results.     

Pulse width compression and enhancement of peak power in a diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> 1.34 μm laser with AO and V<Superscript>3+</Superscript>:YAG saturable absorber

By using both acousto-optic (AO) modulator and V³⁺:YAG saturable absorber, a diode-pumped doubly Q-switched a-cut Nd:GdVO₄ laser at 1.34 μm is realized. The average output power and the pulse width for different AO repetition rate f have been measured. The experimental results show that the doubly Q-switched laser can compress the pulse width and improve the pulsed peak power in comparison to the singly Q-switched laser with AO or V³⁺:YAG saturable absorber. At the pump power 10.34 W and f = 10 kHz, the greatest pulse width compression ratio 72% and the highest peak power improvement 8.8 times have been obtained, respectively.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V<Superscript>3+</Superscript>:YAG saturable absorber

Using V³⁺:YAG crystal as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GGG laser operating at 1.3 μm is realized for the first time. The mode-locking modulation depth of nearly 100% has been achieved. The maximum output power and the single Q-switched pulse energy are 410 mW and 8.3 μJ. The mode-locked pulse inside the Q-switched pulse has a repetition rate of 349 MHz, and its average pulse width is estimated to be about 750 ps.     

Passively Q-switched Tm:YLF laser

Stable passive Q-switching of a Tm: LiYF4 laser is obtained using polycrystalline Cr2+: ZnS as a saturable absorber. The achieved maximum pulse energy of 0.9 mJ and peak power of 65 kW for a pulse duration of ～14 ns represent substantial improvement and highest values for a passively Q-switched diode-pumped Tm laser operating at ～1.9 μm.