利用沙漠沙低温合成高长径比莫来石晶须

利用沙漠沙独特的化学组成特性和矿物特性,将沙漠沙荒料作为硅源,工业Al(OH)3作为铝源制备莫来石晶须.改变硅源/铝源配比和合成温度,结合XRD、SEM、TEM研究莫来石生长环境和自由生长形态的变化.研究结果表明:当沙漠沙与Al(OH)3的质量比为35/65时,在1200℃的低温下就能获得平均值>60的高长径比莫来石晶须;随着煅烧温度的升高,莫来石晶须长径比不断增大,当温度升至1300℃,平均长径比>94.随着合成温度的升高,莫来石的形成经过了一次莫来石和二次莫来石化两个阶段;若配方中Al2 O3处于过饱和状态,样品中刚玉相会随着煅烧温度的升高出现先增多后降低的变化现象.     

熔盐法制备针状莫来石晶体的研究

本文采用Al2(SO4)3·18H2O和SiO2为原料,以K2SO4,Na2SO4为熔盐,用熔盐法合成了针状莫来石晶体.研究了不同合成温度、熔盐用量和保温时间对合成莫来石晶体的影响,分析了熔盐法合成针状莫来石的反应机理.研究结果表明:以K2SO4为熔盐,熔盐与反应物总量质量比为1: 1,合成温度为1000 ℃,保温时间为3 h时可以合成针状莫来石晶体,针状莫来石的生成符合L-S液固生长机理.     

硼酸钙对电瓷结构和性能的影响

研究了硼酸钙掺量对电瓷的相结构、显微结构、电气性能和机械性能的影响.通过不同硼酸钙添加量的电瓷在不同烧结温度条件下的断裂强度、气孔率、电阻率,结合电瓷的晶相结构和显微结构的变化,探讨其构效关系.结果表明:硼酸钙含量的增加或烧结温度升高,电瓷的电阻率和气孔率降低.但当硼酸钙掺量超过10;,烧结温度超过1120℃之后,电阻率和气孔率的变化不明显.电瓷的断裂强度随着硼酸钙的添加而提高,当硼酸钙含量超过10;后开始降低,添加量为10;时电瓷的断裂强度随着烧结温度而提高,1120℃后无显著变化.硼酸钙促进莫来石相的析出,但硼酸钙含量过高时,会促进CaAl2Si2O8形成,降低莫来石相的析出量,并使其形貌从细针状向短柱状和粒状发生转变.硼酸钙掺量恒定时,提高烧结温度可促进细针状莫来石相的生成.     

原位反应烧结制备莫来石-锌铝尖晶石多孔陶瓷研究

以天然高岭土以及活性氧化铝、氧化锌为原料,通过添加天然长石,以石墨为造孔剂,原位反应烧结制备了莫来石-锌铝尖晶石多孔陶瓷.采用XRD、SEM、EDS能谱分析分别确定了试样的物相组成、显微结构与微区化学组成.采用阿基米德排水法与抗压强度测定法测定了试样的孔隙率与抗压强度.结果表明:当原位合成温度为1450～1500℃范围时,试样的物相组成为莫来石与锌铝尖晶石,莫来石呈针状晶须,锌铝尖晶石晶形发育良好,材料的抗压强度增加迅速,为最合适的原位合成温度.长石的加入促进了针状莫来石的形成,促进了材料的烧结,提高了多孔陶瓷的强度.     

以偏钛酸浆料制备氮掺杂纳米二氧化钛及其可见光催化性能研究

以工业偏钛酸为前驱体、尿素为氮源,混合煅烧制备了不同氮含量的TiO2光催化剂(记为TiO2-xN-温度).用傅里叶红外光谱(FT-IR)、X射线光电子能谱(XPS)、X射线衍射(XRD)、透射电子显微镜(TEM)、荧光光谱和紫外-可见光漫反射吸收光谱(UV-Vis/DRS)等对催化剂进行了表征.以亚甲基蓝为目标污染物,评价了样品的可见光光催化活性.结果表明,当催化剂中尿素与TiO2质量比为3∶1,煅烧温度为400℃(即TiO2-3N-400℃)时制得的样品活性最高.500 W的长弧氙灯照射4h,对亚甲基蓝降解率达到93.9;.     

纳米TiO2对氧化铝质多孔陶瓷膜支撑体烧结过程的影响

采用原位水解法,以钛酸四丁酯为前驱体,研究了纳米TiO2对多孔陶瓷膜支撑体烧结过程的影响.结果表明,以钛酸四丁酯为前驱体,采用原位水解法可以将纳米TiO2与大粒径的氧化铝颗粒均匀混合,起到良好的助烧结作用;预烧温度在一定程度上起到调节纳米TiO2添加量的作用并影响支撑体的各项性能.当预烧温度为1300℃,纳米TiO2添加量为0.4wt;时,支撑体经1650℃煅烧2h后,支撑体内部的细颗粒迁移至粗颗粒颈部而基本消失,一定程度上提高支撑体的抗折强度.随着保温时间延长,支撑体的抗折强度不断提高,孔径逐渐增大.但是,较多量的纳米TiO2存在于支撑体内部,起不到良好的助烧结作用.     

透辉石改性粉煤灰基莫来石的性能和微观结构

为提高粉煤灰基莫来石的力学性能,以透辉石为烧结助剂,低温条件下采用无压烧结法制得了致密高强的莫来石.通过对莫来石线收缩率、体积密度、抗折强度、孔结构的测试,并借助X射线衍射、显微镜观察、扫描电镜微观分析等方法,研究了不同烧结温度时透辉石掺量对莫来石性能和结构的影响.结果表明:烧结温度为1400℃、透辉石掺量为8;时制得的莫来石性能最佳.此时,莫来石试样的线收缩率、体积密度和抗折强度最大,分别为13.3; 、2.88 g/cm3和160.6 MPa;试样的显气孔率仅为2.5;,莫来石试样致密程度高.透辉石在高温(≥1250℃)下熔融成液相,不但可填补莫来石烧结形成的孔洞,提高了试样结构的致密性,且有利于莫来石液相烧结,促进莫来石晶相的形成,莫来石晶相由细针状发育成短柱状,晶粒交叉生长,形成致密高强的粉煤灰基莫来石.     

熔盐法合成钛酸锂钾片晶及形貌控制

在碳酸钾、碳酸锂和二氧化钛的混合原料中加入熔盐氯化钾,通过高温煅烧一步制备出钛酸锂钾片晶( K0.8 Li0.27Ti1.73O4, KLTO).通过控制熔盐的添加方式以及煅烧工艺(升温速率、煅烧时间)使材料的形貌朝着二维方向生长,并利用XRD和SEM等手段进行表征.分析发现:过快的升温速率或者较短的煅烧时间都会使材料朝三维方向生长成球状或者块状,反之则会使材料趋向一维方向生长成棒状;同时在煅烧温度达到一定值时再加入熔盐则更有利于片晶的生成.最终得到KLTO片状形貌的最佳控制工艺为:先以300 ℃/h升温至800 ℃后,再加入质量分数为40;的KCl熔盐,接着将升温速率变为200 ℃/h,加热至950 ℃,并在此温度下煅烧3 h.     

原位生长莫来石增强磷酸铬铝复相陶瓷的制备及性能

以磷酸铬铝粘接剂、熔融石英、氢氧化铝为原料制备莫来石原位增强磷酸铬铝复相陶瓷,采用热分析、XRD、SEM、EDS、矢量网络分析测试等手段,研究不同温度对烧结体物相、显微结构、机械及介电性能的影响,并探讨莫来石原位生长和增强机理.结果表明:在1250 ～ 1500℃范围内,随温度升高,材料的致密度、抗弯强度、维氏硬度和介电常数均升高.1500℃煅烧可得致密的原位合成莫来石/磷酸铬铝复相陶瓷,材料晶粒发育比较完善,短棒状莫来石和球状磷酸铬铝晶粒清晰可见,基体致密程度受游离SiO2控制.复合材料介电常数、弯曲强度、维氏硬度分别达到3.7、117 MPa和5.3 GPa.当煅烧至1600℃时,晶粒快速长大,材料的强度降低.磷酸铬铝与莫来石颗粒间通过弥散强化、细晶强化、晶粒拔出等机制对复合材料起到增强的作用.     

高强度莫来石陶瓷微晶薄板的研究

为了降低莫来石微晶陶瓷的合成成本,用粉煤灰、铝矾土与叶腊石等为原料,以氟化铝(AlF3)为矿化剂,在相对较低的温度下合成了莫来石质的陶瓷微晶薄板。采用综合热分析仪(TG-DSC)、X射线衍射仪(XRD)和扫描电子显微镜(SEM)对样品进行表征。结果表明:随煅烧温度的升高,试样的气孔率和吸水率逐渐降低,试样中莫来石晶相含量、弯曲强度、密度逐渐增加。当煅烧温度为1200℃时,试样得弯曲强度达到96MPa。AlF3矿化剂的加入有利于促进莫来石的析晶和微晶板材的烧结,随AlF3矿化剂加入量的逐渐增加,试样的弯曲强度呈现先增加后降低的趋势,其适合的加入量为4.0wt%。     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.