Adsorption and photocatalytic degradation of methylene blue on Zn1−xCuxS nanoparticles prepared by a simple green method

Nanoparticles of Zn_1−xCu_xS with various dopant contents (0 ≤ x ≤ 0.15) were prepared in water by refluxing for 90 min at about 95 °C. Powder X-ray diffraction (XRD) patterns of the nanoparticles demonstrate that loading of Cu²⁺ ions does not change the crystal structure of ZnS. Scanning electron microscopy (SEM) images demonstrate that size of the nanoparticles decreases with increasing Cu²⁺ ions. UV-Vis diffuse reflectance spectra (DRS) of the nanoparticles show significant absorption in visible light region. Adsorption capacity of the nanoparticles for methylene blue (MB) increases with mole fraction of copper ions. Photocatalytic activity of the nanoparticles toward photodegradation of MB was evaluated under visible light irradiation. The results indicate that Zn_0.85Cu_0.15S nanoparticles exhibit highest photocatalytic activity among the prepared samples. Moreover, effects of refluxing time applied for preparation of the nanoparticles and calcination temperature were investigated.     

Investigations on structural and optical properties of Zn1−xGdxS nanoparticles

Zn_1−xGd_xS (x = 0.00, 0.02 and 0.04) nanoparticles were synthesized by facile chemical co-precipitation method using PVP as a surfactant. ZnS nanoparticles could be doped with Gd ions during synthesis without altering the XRD patterns of ZnS. Also, the pattern of the powders showed cubic zincblende structure. The particle size obtained from the XRD studies lies in the range 3-5 nm, whereas from TEM analysis it is 4 nm for x = 0.02 sample. The UV-Vis absorption spectra revealed that Zn_1−xGd_xS nanoparticles exhibit strong confinement effect as the blue shift in the absorption spectra with that of the undoped ZnS. The photoluminescence spectra showed enhanced luminescence intensity and the entry of Gd into host lattice.     

Analysis of the electronic structure of ZrO2 by Compton spectroscopy

The electronic structure of ZrO₂ is studied using the Compton scattering technique. The first-ever Compton profile measurement on polycrystalline ZrO₂ was obtained using 59.54 keV gamma-rays emanating from the ²⁴¹Am radioisotope. To explain the experimental data, we compute theoretical Compton profile values using the method of linear combination of atomic orbitals in the framework of density functional theory. The correlation scheme proposed by Perdew-Burke-Ernzerhof and the exchange scheme of Becke are considered. The ionic-model-based calculations for a number of configurations, i.e., Zr^+x (O^?x/2)₂ (0 ≤ x ≤ 2), are also performed to estimate the charge transfer on compound formation, and the study supports transfer of 1.5 electrons from Zr to O atoms.     

Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se95−xSxZn5 thin films

This paper reports the measurement of space charge limited conduction (SCLC) on the fabricated thin films of Se_95−xS_xZn₅ (0.2≤x≤10) in temperature range 313–353 K for the first time. At high electric fields (E∼10⁴ V/cm), the current could be fitted into the theory of space charge limited conduction, in case of uniform distribution of localized states in mobility gap. The homogeneity and surface morphology of thin films were assessed by scanning electron microscopy. The crystalline nature of the thin films was confirmed by powder XRD and the crystallite size was calculated using Scherer's formula. The crystallite size and density of localized states were found to increase with the increase of sulfur concentration. DC conductivity and activation energy were calculated and found to decrease and increase respectively, with the increase of sulfur concentration.     

Structure and RT ferromagnetism of Fe-doped AlN films

Al_1−xFe_xN_1−δ thin films with 0 ≤ x ≤ 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom will substitutes the Al atom in the lattice when x ≤ 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm³ of the film is found to be induced by AlFeN ternary alloy when x = 1.2%.     

Compton scattering of 59.5 keV gamma rays from p-Si sample in an external electric field

This study is related to Compton scattering of photons from a p-Si sample whose surface charge density distributions are changed by an external electric field. The external electric field intensity in the range 0-75 kV/m was used to change the surface charge density distributions of the sample. The sample surface perpendicular to the electric field was selected as the scattering surface. The p-Si sample was bombarded by 59.5 keV γ-photons emitting from an Am-241 point source. The Compton scattered photons at an angle of 90^o were detected by an Si(Li) detector. The Compton scattering intensity suddenly increased with the application of the electric field since the applied electric field distorts both the negatively charged scattering center (free electron, bound electron, ionized acceptor) and the positively charged scattering center (hole) and their momentum distribution in the sample. There is a good third-order polynominal relation between the Compton scattering intensity and the increasing (or decreasing) electric field intensity. The results show that the positively charged scattering centers behave like negatively charged scattering centers, but the latter are slightly more effective than the former in the Compton scattering of γ-rays from the sample in the electric field.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).     

Radiative quantum efficiency of CdSe/ZnS core-shell colloidal solutions: Size-dependence

Thermo-optical parameters of CdSe/ZnS core-shell nanoparticles suspended in toluene were measured using a thermal lens (TL) technique. TL transient measurements were performed using the mode-mismatched dual-beam (excitation and probe) configuration. A He-Ne laser at λ_p = 632.8 nm was used as the probe beam and an Ar⁺ laser (at λ_e = 514.5 nm) was used as the excitation beam for studies as a function of both core size and concentration of CdSe/ZnS nanocrystals. The fraction thermal load (φ) and radiative quantum efficiencies (η) of the CdSe/ZnS were determined. Dependence on core size (∼2-5 nm) and concentration (∼0.01-0.62 mg/ml) was observed for both φ and η parameters.     

Optical and ESR studies on Fe doped ZnS nanocrystals

Zn_1 − xFe_xS (x=0.0, 0.1, 0.2, 0.4 and 0.6) nanocrystals have been obtained by chemical co-precipitation from homogeneous solutions of zinc and iron salt compounds, with S²⁻ as precipitating anion formed by decomposition of thiophenol. The TEM micrographs show a spherical shape for ZnS nanocrystals and their average size is around 7 nm. The optical absorption spectra indicate a blue shift of the absorption edge with increasing Fe-content. The luminescence of nanoparticles excite at about 370 nm with an emission peak at around 490 nm. At room temperature, ESR signal characteristic of Fe³⁺ was observed in samples of all concentrations.     

Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin Si_xGe_1−x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0 V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (∼7 nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of >10¹² cm⁻². Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.     

Surfactant assisted surface studies of zinc sulfide nanoparticles

We report a simple soft chemical method for the synthesis of ZnS nanoparticles using varying concentration of cationic surfactant CTAB and examine its surface properties. Powder X-ray diffraction, UV-vis spectroscopy, photoluminescence spectroscopy, selective area electron diffraction, and transmission electron microscopy are used to characterize the as prepared ZnS nanoparticles. XRD and TEM measurements show the size of polydispersed ZnS nanoparticles is in the range of 2-5 nm with cubic phase structure. The photoluminescence spectrum of ZnS nanoparticles exhibits four fluorescence emission peaks centered at 387 nm, 412 nm, 489 nm and 528 nm showing the application potential for the optical devices. In Raman spectra of ZnS nanoparticles, the modes around 320, 615 and 700 cm⁻¹ are observed.     

Electronic structure of Ni2TiAl: Theoretical aspects and Compton scattering measurement

In this paper, we report electron momentum density of Ni₂TiAl alloy using an in-house 20 Ci ¹³⁷Cs (661.65 keV) Compton spectrometer. The experimental data have been analyzed in terms of energy bands and density of states computed using linear combination of atomic orbitals (LCAO) method. In the LCAO computations, we have considered local density approximation, generalized gradient approximation and recently developed second order generalized gradient approximation within the frame work of density functional theory. Anisotropies in theoretical Compton profiles along [1 0 0], [1 1 0] and [1 1 1] directions are also explained in terms of energy bands.     

Compton scattering and charge transfer in Er substituted DyAl2

A unique applicability of Compton spectroscopy in probing the electronic states of rare earth aluminides using high energy (662 keV) γ-rays is reported. We have measured first-ever Compton profiles of Dy_1-xEr_xAl₂ (x=0, 0.2) using 20Ci ¹³⁷Cs Compton spectrometer. The charge reorganization in Dy_1−xEr_xAl₂ (x=0, 0.2), on the formation of compound, has been discussed using the valence band Compton profile data. The experimental Compton profile data unambiguously establish charge transfer from Al to Dy (Dy and Er) on formation of x=0.0 (0.2) compound, which is in tune with spin polarized relativistic Korringa–Kohn–Rostoker (SPR-KKR) calculations. A reasonable agreement between SPR-KKR based Compton profiles and the experimental data show applicability of the Green function method in predicting the electronic properties of rare earth compounds.     

Structural,optical and dielectric properties of Ni substituted NdFeO3

Present study reports the structural, optical and dielectric properties of Ni substituted NdFe_1−xNi_xO₃ (0 ≤ x ≤ 0.5) compounds prepared through the ceramic method. X-ray diffraction (XRD) confirmed an orthorhombic crystal structure of all the samples. Both unit cell volume and grain size were found to decrease with an increase in Ni concentration. Morphological study by Scanning electron microscope (SEM) shows less porosity with Ni substitution in present system. From UV–vis spectroscopy, the optical band gap was found to increase with Ni doping. This observed behavior was explained on the basis of reduction in crystallite size, unit cell volume and its impact on the crystal field potential of the system after Ni substitution. The dielectric properties (?′ and tanδ) as a function of frequency or temperature, and the ac electrical conductivity (σ_ac) as a function of frequency have been studied. Hopping of charge carriers between Fe²⁺ → Fe³⁺ ions and Ni²⁺ → Ni³⁺ ions are held responsible for both electrical and dielectric dispersion in the system. Wide optical band gap and a very high dielectric constant of these materials promote them to be a suitable candidate for memory based devices in electronic industry.     

Novel structural and magnetic properties of Mg doped copper nanoferrites prepared by conventional and wet methods

Nanoferrites of the general formula Cu_1−xMg_xFe₂O₄ with 0≤x≤0.6 were prepared by standard ceramic and wet methods. The structure was studied by X-ray diffraction and IR spectroscopy. The density and lattice constant were calculated and reported. The particle size of the prepared nanoferrites ranged from 8.7 to 41.1 nm. It was found that the lattice parameter decreases with increasing cation substitution of Mg²⁺ due to the difference of ionic radius and atomic mass. The dc magnetic susceptibility was measured out using Faraday's method. The magnetic hysteresis measurement was performed using a vibrating sample magnetometer. Magnetic constants such as Curie temperature, effective magnetic moment, saturation magnetization, remanent magnetization and corecivicty were obtained and reported. The magnetic constants decrease with increasing Mg²⁺, except the remanent magnetization which increased.     

Growth, structural and optical properties of non-stoichiometric CuIn(S1−xSex)2 thin films deposited by solution growth technique for photovoltaic application

Polycrystalline thin films of p-CuIn(S_1−xSe_x)₂ have been deposited by a solution growth technique. The deposition parameters such as pH, temperature and time have been optimized. In order to achieve uniformity of thin film, triethanolamine (TEA) has been used. As deposited films have been annealed at 450 °C in air for 5 min. The surface morphology, compositional ratio, structural properties have been studied by SEM, EDAX and XRD technique, respectively. It has been found that films have chalcopyrite structure with the lattice parameters a=5.28 Å and c=11.45 Å at composition x=0.5. The grain size of all composition x measured from SEM and XRD is varied in between 450 and 520 nm. The optical transmittance spectra have been recorded in the range 350-1000 nm. The absorption coefficient has been calculated at the absorption edge for each of the composition x and it is in the range of 10⁴ cm⁻¹. The material shows the direct allowed band gap, which varies from 1.07 to 1.44 eV with change in composition (0≤x≤1.0). These parameters are useful for the photovoltaic application.     

Atomic vibrational dynamics of amorphous Fe-Mg alloy thin films

The atomic vibrational dynamics of ⁵⁷Fe in 800-Å thick amorphous Fe_xMg_1−x alloy thin films (0.3≤x≤0.7) has been investigated at room temperature by nuclear resonant inelastic X-ray scattering (NRIXS) of 14.4125 keV synchrotron radiation. The amorphous phase has been successfully stabilized by codeposition of Fe and Mg in ultrahigh vacuum onto a substrate held at −140 °C during deposition. The amorphous structure of the samples was confirmed by X-ray diffraction and conversion electron Mössbauer spectroscopy. The ⁵⁷Fe-projected partial vibrational density of states, g(E), has been obtained from the measured NRIXS vibrational excitation probability, together with thermodynamic quantities such as the probability of recoilless absorption (f-factor), the average kinetic energy per Fe atom, the average force constant, and the vibrational entropy per Fe atom. A plot of g(E)/E² versus E proves the existence of non-Debye-like vibrational excitations with a peak at E_bp∼3-5 meV (boson peak). Both the boson peak height and E_bp were found to depend linearly on the composition x. Above the boson peak, g(E)/E² exhibits an exponential decrease.     

Luminescence of nanocrystalline ZnS:Cu

Temperature dependent luminescence and luminescence lifetime measurements are reported for nanocrystalline ZnS:Cu²⁺ particles. Based on the variation of the emission wavelength as a function of particle size (between 3.1 and 7.4 nm) and the low quenching temperature (T_q=135 K), the green emission band is assigned to recombination of an electron in a shallow trap and Cu²⁺. The reduction in lifetime of the green emission (from 20 μs at 4 K to 0.5 μs at 300 K) follows the temperature quenching of the emission. In addition to the green luminescence, a red emission band, previously only reported for bulk ZnS:Cu²⁺, is observed. The red emission is assigned to recombination of a deeply trapped electron and Cu²⁺. The lifetime of the red emission is longer (about 40 μs at 4 K) and the quenching temperature is higher.     

Synthesis, characterization and optical properties of water-soluble ZnS:Mn nanoparticles

ZnS nanoparticles with Mn²⁺ doping (0.5-20%) have been prepared through a simple chemical method, namely the chemical precipitation method. The structure of the nanoparticles has been analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and UV-vis spectrometer. The size of the particles is found to be 3-5 nm range. Photoluminescence spectra were recorded for undoped ZnS nanoparticles using an excitation wavelength of 320 nm, exhibiting an emission peak centered at around 445 nm. However, from the Mn²⁺-doped samples, a yellow-orange emission from the Mn²⁺⁴T₁-⁶A₁ transition is observed along with the blue emission. The prepared Mn²⁺-doped sample shows efficient emission of yellow-orange light with the peak emission 580 nm with the blue emission suppressed. The maximum PL intensity is observed only at the excitation energy of 3.88 eV (320 nm). Increase in stabilizing time up to 48 h in de-ionized water yields the enhancement of emission intensity of doped (4% Mn²⁺) ZnS. The correlation made through the concentration of Mn²⁺ versus PL intensity resulted in opposite trend (mirror image) of blue and yellow emissions.     

Density functional study of TaSin (n = 1-3, 12) clusters adsorbed to graphene surface

A plane-wave density functional theory (DFT) calculations have been performed to investigate structural and electronic properties of TaSi_n (n = 1-3, 12) clusters supported by graphene surface. The resulting adsorption structures are described and discussed in terms of stability, bonding, and electron transfer between the cluster and the graphene. The TaSi_n clusters on graphene surface favor their free-standing ground-state structures. Especially in the cases of the linear TaSi₂ and the planar TaSi₃, the graphene surface may catalyze the transition of the TaSi_n clusters from an isomer of lower dimensionality into the ground-state structure. The adsorption site and configuration of TaSi_n on graphene surface are dominated by the interaction between Ta atom and graphene. Ta atom prefers to adsorb on the hollow site of graphene, and Si atoms tend to locate on the bridge site. Further, the electron transfer is found to proceed from the cluster to the surface for n = 1 and 2, while its direction reverses as n > 2. For the case of TaSi, chemisorption is shown to prevail over physisorption as the dominant mode of surface-adsorbate interaction by charge density analysis.