Synthesis and optical characterization of PVP and SHMP-encapsulated Mn-doped ZnS nanocrystals

Zinc sulfide semiconductor nanocrystals doped Mn²⁺ have been synthesized via a solution-based method utilizing optimum dopant concentration (4%) and employing polyvinyl pyrrolidone (PVP) and sodium hexametapolyphosphate (SHMP) as capping agents. UV-vis absorbance spectra for all of the synthesized nanocrystals show an exitonic peak at around 310 nm. The particle size and morphology were characterized by scanning electron microscopy (SEM), FT-IR, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence spectrum (PL). Diffraction data confirmed that the crystallite size is around 3-5 nm. Room temperature photoluminescence (PL) spectrum for the bare ZnS sample shows a strong band at ∼445 nm. The uncapped and capped(SHMP, PVP) ZnS:Mn²⁺ samples show a strong and broad band in the ∼580-585 nm range.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

Photoluminescent (PL) p-type 6H porous silicon carbides (PSCs), which showed a strong blue-green photoluminescence band centered at approximately 490 nm, were annealed in Ar and vacuum conditions. The morphological, optical, and chemical states after annealing are reported on electrochemically etched SiC semiconductors.The thermal treatments in the Ar and vacuum environments showed different trends in the PL spectra of the PSC. In particular, in the case of annealing in a vacuum, the PL spectra showed both a weak red PL peak near 630 nm and a relatively intense PL peak at around 430 nm in the violet region. SEM images showed that the etched surface had spherical nanostructures, mesostructures, and islands. With increasing annealing temperature it changes all spherical nanostructures. The average pore size observed at the surface of the PSC before annealing was of the order of approximately 10 nm.In order to investigate the surface of a series of samples in detail, both the detection of a particular chemical species and the electronic environments at the surface are examined using X-ray photoelectron spectroscopy (XPS). The chemical states from each XPS spectrum depend differently before and after annealing the surface at various temperatures. From these results, the PL spectra could be attributed not only to the quantum size effects but also to the oxide state.     

Photoluminescent behavior of heat-treated porous alumina films formed in malonic acid

In the present work IR spectroscopy, electron probe microanalysis (EPMA) and photoluminescence (PL) spectral measurements were applied to study the effect of treatment temperature (T) on compositional and luminescent properties of malonic acid alumina films. Our studies have shown that the heat treatment of anodic alumina films at investigated temperatures from 100 up to 700 °C changes their photoluminescence spectra considerably. An increase in T results in the PL intensity growth. When reaching its maximum at 600 °C the luminescence intensity then decreases drastically with further T growth. The films heat-treated at 500 and 600 °C demonstrate asymmetrical PL band with Gaussian peaks at 437 and 502 nm. We proved that the malonic acid species incorporated into the alumina bulk during the film formation are responsible for photoluminescence band with its peak at 437 nm.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

The present work focuses on the use of IR spectroscopy and photoluminescence spectral measurements for studying the treatment temperature effect on the compositional and luminescent properties of oxalic acid alumina films. In line with the recent researches we have also found that heat treatment of porous alumina films formed in oxalic acid leads to considerable changes in their photoluminescence properties: upon annealing the intensity of photoluminescence (PL) increases reaching a maximum at the temperature of around 500 °C and then decreases. IR spectra of as-grown and heat-treated films have proved that PL emission in the anodic alumina films is related with the state of ‘structural’ oxalate species incorporated in the oxide lattice. These results allowed us to conclude that PL behavior of oxalic acid alumina films can be explained through the concept of variations in the bonding molecular orbitals of incorporated oxalate species including σ- and π-bonds.     

Luminescent CdSe and CdSe/CdS core-shell nanocrystals synthesized via a combination of solvothermal and two-phase thermal routes

A new solvothermal route has been developed for synthesizing the size-controlled CdSe nanocrystals with relatively narrow size distribution, and the photoluminescence (PL) quantum yields (QYs) of the nanocrystals can reach 5-10%. Then the obtained CdSe nanocrystals served as cores to prepare the core/shell CdSe/CdS nanocrystals via a two-phase thermal approach, which exhibited much higher PL QYs (up to 18-40%) than the CdSe core nanocrystals. The nanocrystal samples were characterized by ultraviolet-visible (UV-vis) absorption spectra, PL spectra, wide-angle X-ray diffraction (WAXD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM).     

Relationship between crystal morphology and photoluminescence in polynanocrystalline lead sulfide thin films

Thin films of lead sulfide (PbS) nanoparticles were grown on corning glass and Si(1 0 0) substrates by polyethylene glycol-assisted chemical bath deposition (CBD) method. This paper compares the morphology and the luminescence properties (PL) of the deposited thin films in the presence (or absence) of PEG300 and investigates the effect of deposition temperatures. Surface morphology and photoluminescence properties of samples were analyzed. The PL data show a blue-shift from the normal emission at ∼2900 nm in PbS bulk to ∼360 nm in nanoparticles of PbS thin films. Furthermore, the PL emission of the films obtained without the addition of PEG300 (type 1) was slightly shifted from that of the films obtained in presence of PEG300 (type 2) from ∼360 to ∼470 nm. The blue-shifting of the emission wavelengths from 2900 to ∼360 or 470 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the shift between the two types of PbS nanoparticles thin films is speculated to be due to an increase in the defect concentration. The blue-shift increased with increase of the deposition temperature, which suggests that there has been a relative depletion in particle sizes during the CBD of the films at higher temperatures. The PbS nanocrystalline thin films obtained in the presence of PEG300 at 60 °C exhibit a high blue luminescence.     

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO₂ opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO₂ composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO₂ opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO₂ opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals.     

Optical properties of p-type CuAlO2 thin film grown by rf magnetron sputtering

We report the structural and optical properties of copper aluminium oxide (CuAlO₂) thin films, which were prepared on c-plane sapphire substrates by the radio frequency magnetron sputtering method. X-ray photoelectron spectroscopy (XPS) along with X-ray diffraction (XRD) analysis confirms that the films consist of delafossite CuAlO₂ phase only. The optical absorption studies show the indirect and direct bandgap is 1.8 eV and 3.45 eV, respectively. Room temperature photoluminescence (PL) measurements show three emission peaks at 360 nm (3.45 eV), 470 nm (2.63 eV) and 590 nm (2.1 eV). The first one is near band edge emission while the other two are originated from defects.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

Ex situ synthesis and optical properties of ZnO-PbS nanocomposites

Zinc oxide (ZnO) and lead sulphide (PbS) nanoparticles separately synthesized by a precipitation method were combined by an ex situ route to prepare ZnO-PbS nanocomposites with different molar ratios of ZnO and PbS. The structure and morphology of the ZnO, PbS and ZnO-PbS samples were analyzed with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). A UV-vis spectrophotometer was used to collect the absorption and 325 nm He-Cd and 488 nm Ar lasers were used to collect the photoluminescence data from the samples. ZnO nanoparticles showed a broad and stable emission peak at ∼570 nm, while a strongly quantum confined emission from PbS nanoparticles was detected at ∼1344-1486 nm. The ZnO-PbS nanocomposites exhibited dual emission in the visible and near-infrared (NIR) regions that is associated with defects and recombination of excitonic centres in the ZnO and PbS nanoparticles, respectively. The PL intensity of the visible emission from the ZnO-PbS nanocomposite was shown to increase when the ZnO to PbS molar ratio was 5:1 and the emission was almost quenched at molar ratios of 1:1 and 1:5. For different molar ratios of ZnO to PbS, the PL intensity of the NIR emission from the ZnO-PbS nanocomposites was more intense than that of PbS nanoparticles.     

Surface-defect-states photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method

CdS nanocrystals were prepared by a simple one-step aqueous synthesis method using thioglycolic acid (TGA) as the capping molecule, and characterized by X-ray powder diffraction (XRD), UV-vis absorption spectra and photoluminescence (PL) emission spectroscopy. The effects of both TGA/Cd and Cd/S molar ratio on the surface-defect-state PL intensity of CdS nanocrystals have been investigated. It was found that all of the as-prepared CdS nanocrystals showed a strong broad emission in the range of 450-700 nm centered at 560 nm, which was attributed to the recombination of an electron trapped in a sulfur vacancy with a hole in the valance band of CdS. The surface-defect-states emission intensity of CdS nanocrystals significantly increased with the increase of Cd/S molar ratio, and showed a maximum when Cd/S molar ratio was 2.0. If Cd/S molar ratio continued to increase, namely more than 2.0, the surface-defect-states emission intensity would decrease. It was found that the surface-defect-states emission intensity increased with the increase the TGA/Cd molar ratio, and showed a maximum when the TGA/Cd molar ratio was equal to 1.8, and a further increase of the TGA/Cd molar ratio would lead to the decrease of the surface-defect-states emission intensity.     

Effect of RF power and sputtering pressure on the structural and optical properties of TiO2 thin films prepared by RF magnetron sputtering

TiO₂ thin films were deposited onto quartz substrates by RF magnetron sputtering. The samples deposited at various RF powers and sputtering pressures and post annealed at 873 K, were characterized using X-ray diffraction (XRD), micro Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectrum indicates that the films are amorphous-like in nature. But micro-Raman analysis shows the presence of anatase phase in all the samples. At low sputtering pressure, increase in RF power favors the formation of rutile phase. Presence of oxygen defects, which can contribute to PL emission is evident in the XPS studies. Surface morphology is much affected by changes in sputtering pressure which is evident in the SEM images. A decrease in optical band gap from 3.65 to 3.58 eV is observed with increase in RF power whereas increase in sputtering pressure results in an increase in optical band gap from 3.58 to 3.75 eV. The blue shift of absorption edge in all the samples compared to that of solid anatase is attributed to quantum size effect. The very low value of extinction coefficient in the range 0.0544-0.1049 indicates the excellent optical quality of the samples. PL spectra of the films showed emissions in the UV and visible regions.     

Photoluminescence and absorption in sol-gel-derived ZnO films

Highly c-axis-oriented ZnO films were obtained on corning glass substrate by sol-gel technique. The characteristics of photoluminescence (PL) of ZnO, as well as the exciton absorption in the absorption (UV) spectra are closely related to the post-annealing treatment. The difference between PL peak position and the absorption edge, designated as Stokes shift, is found to decrease with the increase of annealing temperature. The minimum Stokes shift is about 150 meV. The decrease of Stokes shift is attributed to the decrease in carrier concentration in ZnO film with annealing. X-ray diffraction, surface morphology and refractive index results indicate an improvement in crystalline quality with annealing. Annealed films also exhibit a green emission centered at ∼520 nm with activation energy of 0.89 eV. The green emission is attributed to the electron transition from the bottom of the conduction band to the antisite oxygen O_Zn defect levels.     

In situ preparation and fluorescence quenching properties of polythiophene/ZnO nanocrystals hybrids through atom-transfer radical polymerization and hydrolysis

In this paper, a new approach for in situ preparing nanocomposites of conjugated polymers (CPs) and semiconductor nanocrystals was developed. Polythiophene grafted poly(zinc methacrylate) (PTh-g-PZMA) copolymer was synthesized by atom-transfer radical polymerization (ATRP) of zinc methacrylate (ZMA) initiated from the macroinitiator poly(2,5-(3-(bromoisopropyl-carbonyl-oxymethylene) thiophene)) (PTh-Br) with pendant initiator groups. Subsequently, the polythiophene grafted poly(methacrylate)/ZnO (PTh-g-PMA/ZnO) hybrid heterojunction nanocomposites were successfully prepared by in situ hydrolysis of PTh-g-PZMA casting films in alkaline aqueous solution. The structures of PTh-Br, PTh-g-PZMA and PTh-g-PMA/ZnO were confirmed by the proton nuclear magnetic resonance (¹H NMR) spectra, Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS). The morphologies of PTh-g-PMA/ZnO films prepared for different hydrolysis time were observed in the cross-sections by scanning electron microscope (SEM). The SEM images revealed that ZnO nanocrystals were uniformly dispersed in polymers without any aggregation and the appearances of ZnO nanocrystals changed from nanoparticles to nanorods with the hydrolysis treatment time increasing. The optical properties of these nanocomposites were studied by ultraviolet-visible (UV-vis) absorption and fluorescence spectroscopy. UV-vis absorption spectroscopy showed that the adsorption band of PTh-g-PMA/ZnO hybrids was broader than that of PTh-Br, implying that the existence of ZnO nanocrystals increased the optical absorption region of hybrids. The photoluminescence (PL) spectra of the hybrids showed that fluorescence quenching occurred in PTh-g-PMA/ZnO blends and a maximum of 85% of the fluorescence intensity quenched in the PTh-g-PMA/ZnO obtained from treatment in NaOH aqueous solution for 2 h, which revealed the existence of photo-induced charge transfer between the polythiophene chains and ZnO. These results indicated that the hybrid heterojunction nanocomposites could be promising candidates for photovoltaic applications.     

Functionalized CdS nanospheres and nanorods

Functionalized nanoparticles are discussed. Surfaces of CdS:Mn/ZnS core/shell nanospheres (Qdots) were converted from hydrophobic to hydrophilic by growth of a SiO₂ shell. The colloidal dispersion was stabilize by adding a surfactant with a negative surface charge, and a cell-penetrating-peptide, TAT, was attached through a primary amine group. The TAT functionalized Qdots were shown to pass the blood-brain-barrier and luminescence in the infused half of the brain.In addition, nanorods of S²⁻ rich CdS were synthesized by reaction of excess S with Cd precursors in the presence of ethylene diamine. The photoluminescence (PL) peak from the S²⁻ rich CdS nanorods was broad with a maximum at ∼710 nm, which was 40 nm longer in wavelength than the PL peak from Cd²⁺ rich CdS (∼670 nm) nanorods. The influence of surface electron or hole trap states on the luminescent pathway of CdS nanorods were used to explain these shifts in wavelength. Nanocrystals of Au with ∼2 nm diameters were grown on S²⁻ rich surfaces of CdS nanorods. Significant quenching of photoluminescence was observed from Au nanocrystals on CdS nanorods due to interfacial charge separation. Charge separation by Au nanocrystals on CdS resulted in enhanced UV photocatalytic degradation of Procion red mix-5B (PRB) dye in aqueous solution.     

Uniformity study of wafer-scale InP-to-silicon hybrid integration

β-SiC nanowires were synthesized by a simple carbothermal reduction of carbonaceous silica xerogel. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscope and transmission electron microscopy. The results showed that the nanowires were hexagonal prism-shaped hierarchical nanostructures. The typical stacking faults and twin defects of SiC nanowires were also observed. Band-gap characterization and photoluminescence properties of SiC nanowires were investigated by UV-vis absorption spectroscopy and fluorescence photometry, respectively. The results showed the SiC nanowire was an indirect transition semiconductor and the band gap energy for the SiC nanowires was 2.85 eV. The photoluminescence peak value at 470 nm (2.64 eV) originating from the SiC nanowires was a little higher than the value of band-gap energy.     

Formation and spectroscopic characterization of mono-dispersed CdSe nanocrystals

In this article, mono-dispersed hexagonal structure CdSe nanocrystals with polyhedron shape were prepared by an open solvent thermal reaction. They show a discrete excitonic transition structure in the absorption spectra and the minimal photoluminescence （PL） peak full-width at half-maximum of 19nm. The PL quantum yield is about 60%. Transmission electron micrographs, high-resolution transmission electron micrographs, x-ray powder diffraction patterns, UV-vis absorption spectra and PL spectra were obtained for the as-prepared CdSe nanocrystals. The size of the CdSe nanocrystals can be tuned by changing the reaction temperature or time. Due to the improved synthesis method, a different growth mechanism of the CdSe nanocrystals is discussed.     

The structure and photoluminescence properties of Cr-doped SiC films

Cr-doped SiC films are prepared by the RF-magnetron sputtering technique on Si substrates with a composite target of a single-crystalline SiC containing several Cr pieces on the surface. The as-deposited films are annealed in the temperature of 1000 °C under nitrogen ambient. The structure of the samples has been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman scattering measurement. The results show that the SiC crystal is formed and that majority of Cr doped in the SiC resulted in the formation of the C clusters. Then the photoluminescence (PL) spectra of the samples are observed in the visible range at room temperature. The optical properties of the samples have also been discussed briefly. We attribute the origin of the 412-nm PL band to a kind of C cluster center.