Normal-state electrical resistivity and superconducting magnetic penetration depth in Eu<Subscript>0.5</Subscript>K<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> polycrystals

We report measurements of the temperature dependence of the electrical resistivity, ρ(T), and magnetic pen-etration depth, λ(T), for polycrystalline samples of Eu_0.5K_0.5Fe₂As₂ with T _c = 31 K. ρ(T) follows a linear temperature dependence above T _c and bends over to a weaker temperature dependence around 150 K. The magnetic penetration depth, determined by radio frequency technique displays an unusual minimum around 4 K which is associated with short-range ordering of localized Eu³⁺ moments. The article is published in the original.     

Magnetic ground state and the spin-state transitions in YBaCo<Subscript>2</Subscript>O<Subscript>5.5</Subscript>

The crystal and magnetic structure of the perovskite-like, oxygen deficient cobalt oxide YBaCo₂O_5.5 has been studied by means of neutron and X-ray diffraction in the 10–300 K temperature range. The magnetic ground state is characterized by a coexistence of two distinct antiferromagnetic phases. In the first one, the ionic moments of high-spin Co³⁺ ions in the pyramidal sites are ordered in a spiral arrangement, while octahedral sites are non-magnetic due to presence of low-spin Co³⁺ ions. The arrangement in the second phase is collinear of the G-type, with non-zero moments both in pyramidal (high-spin Co³⁺ ions) and octahedral sites (presumably a mixture of the low- and high-spin states). With increasing temperature, at 260–300 K, the system develops a gradual structural transformation, which is associated with appearance of spontaneous magnetic moment. This process is related to a thermally induced reversion of low- and high-spin states at the octahedral sites to the intermediate-spin Co³⁺ states, resulting in an insulator-metal transition at T_C ≈ T_IM ≈ 295 K.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

Possible manifestation of spin fluctuations in the temperature behavior of the resistivity of Sm<Subscript>1.85</Subscript>Ce<Subscript>0.15</Subscript>CuO<Subscript>4</Subscript> thin films

A pronounced step-like (kink) behavior in the temperature dependence of resistivity ρ(T) is observed in the optimally doped Sm_1.85Ce_0.15CuO₄ thin films around T _sf = 87 K and attributed to the manifestation of strong-spin fluctuations induced by Sm³⁺ moments with the energy ħω_sf = k _B T _sf ≃ 7 meV. The experimental data are found to be well fitted by the residual (zero-temperature) ρ_res, electron-phonon ρ_e-ph(T) = AT, and electron-electron ρ_e-e(T) = BT ² contributions in addition to the fluctuation-induced contribution ρ_sf(T) due to thermal broadening effects (of the width ω_sf). According to the best fit, the plasmon frequency, impurity scattering rate, electron-phonon coupling constant, and Fermi energy are estimated as ω_p = 2.1 meV, τ ₀ ⁻¹ = 9.5 × 10⁻¹⁴ s⁻¹, λ = 1.2, and E _F = 0.2 eV, respectively. The text was submitted by the authors in English.     

Magnetotransport and magnetocaloric effect in Ho<Subscript>2</Subscript>In

The magnetotransport and magnetic properties of the binary intermetallic compound Ho₂In have been investigated. Clear signature of long range ferromagnetic order in the resistivity and the magnetization data at T_C = 85 K is observed. A further spin reorientation type transition is also apparent in our measured data at around T_t = 32 K. The sample exhibits negative magnetoresistance (peak value of –14% at 5 T) over a wide temperature range that extends well above T_C. Substantially large magneto-caloric effect is also observed in the sample (maximum value of –8.5 J kg^-1K^-1 for 0 → 5 T), which peaks around the T_C of the sample. The observed magnetoresistance and magnetocaloric effect are related to the suppression of spin disorder by an external magnetic field. Ho₂In can be an interesting addition to the list of rare-earth based magnetic refrigerant materials showing magneto-caloric effect across a second order phase transition.     

Manganese-doped ZnSiAs<Subscript>2</Subscript> chalcopyrite: A new advanced material for spintronics

A new spintronics material with the Curie temperature above room temperature, the ZnSiAs₂ chalcopyrite doped with 1 and 2 wt % Mn, is synthesized. The magnetization, electrical resistivity, magnetoresistance, and the Hall effect of these compositions are studied. The temperature dependence of the electrical resistivity follows a semiconducting pattern with an activation energy of 0.12–0.38 eV (in the temperature range 124 K ≤ T ≤ 263 K for both compositions). The hole mobility and concentration are 1.33, 2.13 cm²/V s and 2.2 × 10¹⁶, 8 × 10¹⁶ cm⁻³ at T = 293 K for the 1 and 2 wt % Mn compositions, respectively. The magnetoresistance of both compositions, including the region of the Curie point, does not exceed 0.4%. The temperature dependence of the magnetization M(T) of both compositions exhibits a complicated character; indeed, for T ≤ 15 K, it is characteristic of superparamagnets, while for T > 15 K, spontaneous magnetization appears which correspond to a decreased magnetic moment per formula unit as compared to that which would be observed upon complete ferromagnetic ordering of Mn²⁺ spins or antiferromagnetic ordering of spins of the Mn²⁺ and Mn³⁺ ions. Thus, for T > 15 K, it is a frustrated ferro- or ferrimagnet. It is found that, unlike the conventional superparamagnets, the cluster moment μ _c in these compositions depends on the magnetic field: ∼12000–20000μ_B for H = 0.1 kOe, ∼52–55μ_B for H = 11 kOe, and ∼8.6–11.0μ_B at H = 50 kOe for the compositions with 1 and 2 wt % Mn, respectively. The specific features of the magnetic properties are explained by the competition between the carrier-mediated exchange and superexchange interactions.     

Kinetic phenomena in zero-gap semiconductors CuFeS<Subscript>2</Subscript> and CuFeTe<Subscript>2</Subscript>: Effect of pressure and heat treatment

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS₂ samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS₂ has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS₂, we have n(T) ∝ T ^1.2; in isoelectron compound Cu_1.13Fe_1.22Te₂, we have n(T) ∝ T ^1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS₂, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.     

Pressure-induced metamagnetic transition in the Cd<Subscript>0.7</Subscript>Mn<Subscript>0.3</Subscript>GeAs<Subscript>2</Subscript> ferromagnetic semiconductor

The magnetic susceptibility χ/χ₀ and the longitudinal Δρ _zz /ρ₀ and transverse Δρ _xx /ρ₀ magnetoresistances have been measured as functions of the hydrostatic pressure P ≤ 7 GPa at room temperature in the high-temperature ferromagnetic semiconductor Cd_0.7Mn_0.3GeAs₂ with a chalcopyrite structure and the Curie temperature T _c = 355 K. A pressure-induced metamagnetic transition from the low-magnetization state to the high-magnetization state has been observed in Cd_0.7Mn_0.3GeAs₂ near the magnetic ordering temperature. This transition is accompanied by the hysteresis of the magnetic susceptibility and magnetoresistance.     

Polarons in axial transport in single-layer high-T<Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> superconductors

The temperatureT dependencies ρ(T) of normal state electric resistivitiesρ _c (axial) andρ _ab (in plane) of single-layer high-T _c superconductors show common trends: AsT is raised, the resistivity first drops steeply before it starts rising αT above an apparent semiconductor-to-metal crossoverT _cross . To analyze ρ(T) we plottT/ρ againstT at various dopingsx for bothρ _c andρ _ab .T/ρ is inversely proportional to the traversal time across a potential barrier as an ionic particle drifts in an electric field. We findT/ρ in good agreement with theT dependence of the quantum rate of migrating particles: AsT is raised, a zero-point rate at the lowestT is extended to a nearly flat plateau before a thermally activated branch sets in. We also find evidence for the admixture of 1- & 2-phonon absorptions below the Arrhenius range. These features shape the semiconductor-like branch below T _cross . AboveT _cross a metallic-like branch sets in, its αT character deriving from the field coupling of the migrating particle. Our analysis suggests that metal physics may not suffice if ionic features play a role in transport. We attribute our conclusions to the drift of strong-coupling polarons along Cu−O bonds. These “bond polarons” originate from carrier scattering by double-well potentials associated with the bonds. A bond polaron dissociates to a free hole as it passes onto a neighboring O-O link.     

Anisotropy of the vortex structure and resistivity in the basal plane of YBa<Subscript>2</Subscript>Cu<Subscript>4</Subscript>O<Subscript>8</Subscript> single crystals

The vortex lattice of the YBa₂Cu₄O₈ high-temperature superconductor is studied in the basal plane of monocrystalline samples using the decoration technique in a field interval of 40–600 Oe. Vortex lattice anisotropy (field-independent “compression” of a regular hexagonal vortex cell in the poorly conducting direction by a factor of about 1.3) is detected. Resistivity anisotropy ρ _a /ρ _b measured at temperatures from T _c to room temperature is 16–9. Possible reasons for the discrepancy between our results and the available data are discussed.     

Mechanisms of charge transfer and magnetoresistance in CuInSe<Subscript>2</Subscript>

The electrical conductivity and magnetoresistance effect of n and p types of CuInSe₂ single crystals were studied within the temperature range of 4.2–300 K and within magnetic fields of up to 6 T. It was found that the hopping mechanism of conductivity dominates in the temperature range of 4.2–100 K. A peculiarity of electrical conductivity behavior, accompanied by a change in the magnetoresistance sign in the vicinity of T ≈ 60 K, was revealed.     

Paramagnetic-ferromagnetic and insulator-metal phase transitions in La<Subscript>0.88</Subscript>MnO<Subscript>2.95</Subscript>

We present the results a study of structure by neutron diffraction and data on the magnetic properties (linear and nonlinear (second and third order) susceptibilities) of polycrystalline La_0.88MnO_2.95. This compound exhibits an insulator-metal (IM) phase transition at T _IM ≈ 253 K (above the Curie temperature, T _C ≈ 244 K) and reveals colossal magnetoresistance. The crystal structure is found to be rhombohedral, and the space group is R3c. Analysis of magnetic properties shows that at T* ≈ 258 K > T _C , isolated paramagnetic clusters occur in the paramagnetic matrix; their concentration increases upon cooling. We observed no noticeable differences between the temperature evolution of the clustered state of this manganite with its insulator-metal transition and in the insulator La_0.88MnO_2.91. Possible scenarios of the paramagnet-ferromagnet and I-M transitions in a self-organized clustered structure are discussed.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Magnetic properties of the Nd<Subscript>0.5</Subscript>Gd<Subscript>0.5</Subscript>Fe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystal

The magnetic properties of the Nd_0.5Gd_0.5Fe₃(BO₃)₄ single crystal have been studied in principal crystallographic directions in magnetic fields to 90 kG in the temperature range 2–300 K; in addition, the heat capacity has been measured in the range 2–300 K. It has been found that, below the Néel temperature T _N = 32 K down to 2 K, the single crystal exhibits an easy-plane antiferromagnetic structure. A hysteresis has been detected during magnetization of the crystal in the easy plane in fields of 1.0–3.5 kG, and a singularity has been found in the temperature dependence of the magnetic susceptibility in the easy plane at a temperature of 11 K in fields B < 1 kG. It has been shown that the singularity is due to appearance of the hysteresis. The origin of the magnetic properties of the crystal near the hysteresis has been discussed.     

Electron transport properties of MgB<Subscript>2</Subscript> in the normal state

We report measurements of the resistivity, ρ, and the Seebeck coefficient, S , of a MgB₂ sintered sample, and compare S with theoretical calculations based on precise electronic structure calculations. ρ is fitted well by a generalized Bloch-Grüneisen equation with a Debye temperature Θ _R of 1050 K. S is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region T _c < T < 0.1Θ _R follows the relationship AT+BT³. The phonon drag term indicates a strong electron-phonon interaction. The diffusive term, compared with calculations, suggests that σ bands give the main contribution to the Seebeck effect. Received 16 November 2001 and Received in final form 21 December 2001     

Insulator-metal transition shift related to magnetic polarons in La<Subscript>0.67-x</Subscript>Y<Subscript>x</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

The magnetic transport properties have been measured for La_0.67-xY_xCa_0.33MnO₃ ( 0 ⩽ x ⩽ 0.14) system. It was found that the transition temperature T _p almost linearly moves to higher temperature as H increases. Electron spin resonance confirms that above T _p , there exist ferromagnetic clusters. From the magnetic polaron point of view, the shift of T _p vs. H was understood, and it was estimated that the size of the magnetic polaron is of 9.7 ∼ 15.4 ? which is consistent with the magnetic correlation length revealed by the small-angle neutron-scattering technique. The transport properties at temperatures higher than T _p conform to the variable-range hopping mechanism. Received 27 August 2002 / Received in final form 2 December 2002 Published online 14 March 2003     

Magnetic and transport properties of monocrystalline<Emphasis Type="Italic">Fe</Emphasis><Subscript>3</Subscript><Emphasis Type="Italic">O</Emphasis><Subscript>4</Subscript>

A monocrystal ofFe ₃ O ₄ is characterized by resistance, magnetoresistance and magnetic measurements in a temperature range from 4.2 K to 350 K and magnetic field-cycling from −9 T to 9 T. The resistance measurements revealed a metal-insulator Verwey transition (VT) atT _v =123.76 K with activation energy E=92.5 meV at T >T _v and temperature-substitute for the activation energy below the VT,T ₀=E/k _B ≈3800 K within 70 K–110K. The magnetotransport results independently verified the VT at 123.70 K, with discontinuous change in the magnetic moment ΔM≈0.21 ΔM≈0.21μ _B and resistance hysteresis, dependent on the magnetic field in a narrow temperature range of 0.4° around theT _v . The magnetic characterization established self consistentlyT _v as ≈123.67 K, the jump in the magnetization at the VT≈0.25μ _B and confirmed, that the magnetocrystalline anisotropy is the main microscopic mechanism responsible for the magnetization of the monocrystal (88%) with additional natural and imposed defects contributing as 12%.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.