A Novel Boron-Rich Scandium Borocarbide; Sc4.5−xB57−y+zC3.5−z(x=0.27, y=1.1, z=0.2)

A novel ternary boron-rich scandium borocarbide Sc_4.5−xB_57−y+zC_3.5−z (x=0.27, y=1.1, z=0.2) was found. Single crystals were obtained by the floating zone method by adding a small amount of Si. Single-crystal structure analysis revealed that the compound has an orthorhombic structure with lattice constants of a=1.73040(6), b=1.60738(6) and c=1.44829(6) nm and space group Pbam (No. 55). The crystal composition ScB_13.3C_0.78Si_0.008 calculated from the structure analysis agreed with the measured composition of ScB_12.9C_0.72Si_0.004. The orthorhombic crystal structure is a new structure type of boron-rich borides and there are six structurally independent B₁₂ icosahedra I1—I6, one B₈/B₉ polyhedron and nine bridging sites all which interconnect each other to form a three-dimensional boron framework. The main structural feature of the boron framework structure can be understood as a layer structure where two kinds of boron icosahedron network layer L1 and L2 stack each other along the c-axis. There are seven structurally independent Sc sites in the open spaces between the boron icosahedron network layers.     

Floating Zone Crystal Growth and Structure Analysis of a Novel ScB19 Family Compound, ScB19+xSiy

Single crystals of a novel ScB₁₉ family compound ScB_19+xSi_y were grown by the floating zone method using a four-lamp mirror-type image furnace. A small amount of silicon addition to ScB₁₉ which decomposes at elevated temperatures without melting allowed it to coexist with the liquid phase and as a resultant made the floating zone crystal growth possible. Powder X-ray diffraction analysis confirmed the grown crystals of ScB_19+xSi_y to be isostructural to ScB₁₉. It was found that the crystal structure of ScB_19+xSi_y solved based on single-crystal X-ray data is tetragonal with lattice constants of a, b=1.03081(2) nm, c=1.42589(3) nm, space group P4₁2₁2 or P4₃2₁2 and is basically isotypic with α-AlB₁₂ structure type. In the crystal structure boron atoms form a three-dimensional framework based on interconnected B₁₂ icosahedra and B₂₂ polyhedra. The Sc atoms reside in three of five Al sites in the α-AlB₁₂ structure and Si resides in a bridge site bonding two B₂₂ units.     

Crystal structures of RPt3−xSi1−y(R=Y, Tb, Dy, Ho, Er, Tm, Yb) studied by single crystal X-ray diffraction

The crystal structures of ternary compounds RPt_3−xSi_1−y(R=Y, Tb, Dy, Ho, Er, Tm, Yb) have been elucidated from X-ray single crystal CCD data. All compounds are isotypic and crystallize in the tetragonal space group P4/mbm. The general formula RPt_3−xSi_1−y arises from defects: x≈0.20, y≈0.14. The crystal structure of RPt_3−xSi_1−y can be considered as a packing of four types of building blocks which derive from the CePt₃B-type unit cell by various degrees of distortion and Pt, Si-defects.     

Electronic structure calculation of cohesive properties of some Si6−zAlzOzN8−z spinels

The structures of a spinel form of Si_6−zAl_zO_zN_8−z are investigated using techniques of ab initio density functional plane wave electronic structure theory with soft pseudopotentials. Four spinel configurations are considered corresponding to z=0, 1, 2, and 4. In the case of z=2 (Si₂AlON₃ spinels), that has now been synthesized, a normal or inversed configuration is considered. Very small energy differences are found suggesting that a mixed random atomic structure is very likely for the Si₂AlON₃ spinels. Results across the other range of spinels show that incompressible structures are associated with larger concentrations of N. These structures also have the larger cohesive energies. All spinels have direct energy band gaps varying between 3 and in the spinel 56-atom unit cell depending upon oxygen concentration.     

Modulated structure of the composite crystal InCr1−xTixO3+x/2

Incommensurately modulated structure of the composite crystal InCr_1−xTi_xO_3+x/2 was refined by the profile fitting of powder X-ray diffraction based on the four-dimensional superspace group. The crystal consists of two monoclinic subsystems mutually incommensurate in b. The first subsystem is the alternate stacking of an edge-shared InO₆ octahedral layer and a Cr/Ti triangle-lattice plane along c^*. A sheet of oxygen atoms constructing the second subsystem is also extending on the Cr/Ti plane. The whole structure is the alternate stacking of an edge-shared InO₆ octahedral layer and a Cr/Ti-O plane, where displacive modulation of O ions is prominent. Metal ions on the Cr/Ti-O plane are surrounded by three or four oxygen ions on the plane and, in addition, two axial ones.     

New scandium rhodium boride Sc<Subscript>4</Subscript>Rh<Subscript>17</Subscript>B<Subscript>12</Subscript> with a framework structure: synthesis,crystal structure,and properties

The new scandium rhodium boride Sc₄Rh₁₇B₁₂ was synthesized by arc-melting of the elements followed by annealing in inert atmosphere. The crystal structure of Sc₄Rh₁₇B₁₂ was solved using single crystal X-ray diffraction data. The structure can be described as a three-dimensional frame-work formed by trigonal prisms [BRh₆] and [BRh₅Sc] with isolated boron atoms inside the prisms and trigonal prisms [BRh₅B] representing the coordination polyhedra of paired boron atoms. The temperature dependences of the magnetic susceptibility and specific resistance of Sc₄Rh₁₇B₁₂ revealed that the compound is a Pauli paramagnet and shows metal-like specific resistance.     

Novel rare-earth borosilicide RE1−xB12Si3.3−δ (RE=Y, Gd-Lu) (0?x?0.5, δ≈0.3): synthesis, crystal growth, structure analysis and properties

New rare-earth boron-rich compounds with the formula of RE_1−xB₁₂Si_3.3−δ (RE=Y, Gd-Lu) (0?x?0.5,δ≈0.3) have been synthesized. They belong to a new type of rhombohedral structure with the space group of R-3m (No. 166) and z=9. The lattice constants were measured from powder XRD data. Crystal structure solved from powder XRD data for Tb_0.68B₁₂Si₃ as a representative has been compared with that of YB_17.6Si_4.6 (or Y_0.68B₁₂Si_3.01), whose structure was solved from single-crystal reflection data. The structure model is confirmed by high-resolution transmission microscope analysis. The vibrational modes of the new crystals were measured by Raman spectroscopy. Temperature dependence of magnetic susceptibility which was measured for RE_1−xB₁₂Si_3.3−δ single crystals by SQUID revealed that they are paramagnetic materials down to 2.0 K.     

Defect clusters and precipitation/oxidation of MgO-Co1−xO solid solution

MgO and Co_1−xO powders in 9:1 and 1:9 molar ratio (denoted as M₉C₁ and M₁C₉, respectively) were sintered and homogenized at 1600°C followed by annealing at 850°C and 800°C, respectively to form defect clusters and precipitates. Analytical electron microscopic observations indicated the protoxide remained as rock salt structure with complicated planar diffraction contrast for M₉C₁ sample, however with spinel paracrystal precipitated from the M₁C₉ sample due to the assembly of charge- and volume-compensating defects of the 4:1 type, i.e., four octahedral vacant sites surrounding one Co³⁺-filled tetrahedral interstitial site. The spacing of such defect clusters is 4.5 times the lattice spacing of the average spinel structure of Mg-doped Co_3−δO₄, indicating a higher defect cluster concentration than undoped Co_3−δO₄. The {111} faulting of Mg-doped Co_3−δO₄/Co_1−xO in the annealed M₁C₉ sample implies the possible presence of zinc blend-type defect clusters with cation vacancies assembled along oxygen close packed (111) plane.     

Solvothermal Synthesis of Superfine Li1−xMn2O4−σ Powders

Superfine Li_1−xMn₂O_4−σ powders were successfully synthesized by the alcohol-thermal method using 0.01 mol of MnO₂, 0.01mol of LiOH·H₂O, and 0.06mol of NaOH as starting materials at 160-200°C. The products are characterized by XRD, TEM, ED, BET, and ICP. Results show that the Li_0.74Mn₂O_3.74 powder prepared at 200°C has an average size of 180 nm with BET surface areas of 16.44 m²/g. A possible formation mechanism is proposed. It was concluded that the alcohol acts not only as the solvent but also as the reducing agent in the synthesis of Li_1−xMn₂O_4−σ powders. The effects of reaction temperature and the contents of NaOH and LiOH on the formation of single phase Li_1−xMn₂O_4−σ were investigated.     

Crystal Structure of Pseudorhombohedral InFe1−xTixO3+x/2 (x=2/3)

The structure of pseudorhombohedral-type InFe_1−xTi_xO_3−x/2 (x=2/3) was refined by Rietveld profile fitting. The crystal is a commensurate member of a series in a solution range on InFeO₃-In₂Ti₂O₇ including incommensurate structures. The structure with the unit cell of a=5.9188(1), b=10.1112(2), and c=6.3896(1) Å, β=108.018(2)°, and a space group P2₁/a is the alternate stacking of an edge-shared InO₆ octahedral layer and an Fe/Ti-O plane along c^*. Metal sites on the Fe/Ti-O plane are surrounded by four oxygen atoms on the Fe/Ti-O plane and two axial ones. Electric conductivities of the order 10⁻⁴ S/cm were observed for the samples at 1000 K, while the oxide ion transport number is almost zero as no electromotive force was detected by an oxygen concentration cell.     

Synthesis of LiNi1/3Co1/3Mn1/3O2−zFz cathode material from oxalate precursors for lithium ion battery

The layered LiNi_1/3Co_1/3Mn_1/3O_2−zF_z (0 ≤ z ≤ 0.12) cathode materials were synthesized from oxalate precursors by a simple self-propagating solid-state metathesis method with the help of the ball milling and the following calcination. Li(Ac)·2H₂O, Ni(Ac)₂·4H₂O, Co(Ac)₂·4H₂O, Mn(Ac)₂·4H₂O(Ac = acetate), LiF and excess H₂C₂O₄·2H₂O were used as starting materials without any solvent. The structural and electrochemical properties of the prepared LiNi_1/3Co_1/3Mn_1/3O_2−zF_z were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements, respectively. The XRD patterns indicate that all samples have a typical hexagonal structure with a space group of . The FESEM images show that the primary particle size of LiNi_1/3Co_1/3Mn_1/3O_2−zF_z gradually increases with increasing fluorine content. Though the fluorine-substituted LiNi_1/3Co_1/3Mn_1/3O_2−zF_z have lower initial discharge capacities, a small amount of fluorine-substituted LiNi_1/3Co_1/3Mn_1/3O_2−zF_z (z = 0.04 and 0.08) exhibit excellent cycling stability and rate capability compared to fluorine-free LiNi_1/3Co_1/3Mn_1/3O₂.     

Effect of boron non-stoichiometry on B-site in perovskite type structure ScBxRh3 and CeBxRh3 on charges of atoms on A-site: study by X-ray photoelectron and nuclear magnetic resonance spectroscopies

The solid solutions of ScBRh₃-ScRh₃ and CeBRh₃-CeRh₃ are synthesized by the arc melting method, where RBRh₃ and RRh₃ (R=rare earth element) have perovskite and AuCu₃ type structures, respectively. The binding energy of Sc 2p_3/2 for ScB_xRh₃ increases with the boron concentration. The Knight shift of ⁴⁵Sc observed by nuclear magnetic resonance spectroscopy decreases with increase of boron concentration. The decrement of the Knight shift corresponds the Sc 4s electron density at the Fermi level. The intensity ratio of f²: f¹: f⁰ of Ce 3d XPS spectrum changes with boron concentration of CeB_xRh₃. It is concluded that in both cases of ScB_xRh₃ and CeB_xRh₃ the charge on the atoms on A-site changes with the concentration of the atoms on B-site, where the atoms are not directly bound.     

Synthesis and electrical conductivity of perovskite-type PrCo1−xMgxO3

Oxides in the system PrCo_1−xMg_xO₃ (x=0.0, 0.05, 0.10, 0.15, 0.20, 0.25) were synthesized by citrate technique and characterized by powder X-ray diffraction and scanning electron microscope. All compounds have a cubic perovskite structure (space group ). The maximum ratio of doped Mg in the system PrCo_1−xMg_xO₃ is x=0.2. Further doping leads to the segregation of Pr₆O₁₁ in PrCo_1−xMg_xO₃. The substitution of Mg for Co improves the performance of PrCoO₃ as compared to the electrical conductivity measured by a four-probe electrical conductivity analyzer in the temperature range from 298 to 1073 K. The substitution of Mg for Co on the B site may be compensated by the formations of Co⁴⁺ and oxygen vacancies. The electrical conductivity of PrCo_1−xMg_xO₃ oxides increases with increasing x in the range of 0.0-0.2. The increase in conductivity becomes considerable at the temperatures ?673 K especially for x?0.1; it reaches a maximum at x=0.2 and 1073 K. From x>0.2 the conductivity of PrCo_1−xMg_xO₃ starts getting lower. This is probably a result of the segregation of Pr₆O₁₁ in PrCo_1−xMg_xO₃ , which blocks oxygen transport, and association of oxygen vacancies. A change in activation energy for all PrCo_1−xMg_xO₃ compounds (x=0-0.25) was observed, with a higher activation energy above 573 K and a lower activation energy below 573 K. The reasons for such a change are probably due to the change of dominant charge carriers from Co⁴⁺ to Vö in PrCo_1−xMg_xO₃ oxides and a phase transition mainly starting at 573 K.     

Structure and photoluminescence properties of Ce-doped novel silicon-oxynitride Ba4−zMzSi8O20−3xN2x (M=Mg, Ca, Sr)

Structural and photoluminescence properties of undoped and Ce³⁺-doped novel silicon-oxynitride phosphors of Ba_4−zM_zSi₈O_20−3xN_2x (M=Mg, Sr, Ca) are reported. Single-phase solid solutions of Ba_4−zM_zSi₈O_20−3xN_2x oxynitride were synthesized by partial substitutions of 3O²⁻→2N³⁻ and Ba→M (M=Mg, Ca, Sr) in orthorhombic Ba₂Si₄O₁₀. The influences of the type of alkaline earth ions of M, the Ce³⁺ concentration on the photoluminescence properties and thermal quenching behaviors of Ba₃MSi₈O_20−3xN_2x (M=Mg, Ca, Sr, x=0.5) were investigated. Under excitation at about 330 nm, Ba₃MSi₈O_20−3xN_2x:Ce³⁺ (x=0.5) exhibits efficient blue emission centered at 400-450 nm in the range of 350-650 nm owing to the 5d→4f transition of Ce³⁺. The emission band of Ce³⁺ shifts to long wavelength by increasing the ionic size of M due to the modification of the crystal field, as well as the Ce³⁺ concentrations due to the Stokes shift and energy transfer or reabsorption of Ce³⁺ ions. Among the silicon-oxynitride phosphors of Ba₃MSi₈O_18.5N:Ce³⁺, M=Sr_0.6Ca_0.4 possesses the best thermal stability probably related to its high onset of the absorption edge of Ce³⁺.     

The clathrate Ba8CuxGe46−x−y□y: Phase equilibria and crystal structure

Phase relations at 700 °C, 800 °C and solidus temperatures have been derived for the clathrate system Ba₈Cu_xGe_46−x−y□_y via X-ray single crystal and powder diffractometry combined with electron probe micro analysis and differential thermal analysis. The ternary clathrate phase derives from binary Ba₈Ge₄₃□₃ and extends up to x=6. Structure investigations define cubic primitive symmetry with the space group type consistent with a clathrate type I structure throughout the entire homogeneity region 0<x?6 but defect-free Ba₈Cu_xGe_46−x exists for x?5.5.     

Synthesis, crystal structure, and density of (W1−xAlx)C

A new solid solution system of Al in WC, with the stoichiometry of (W_1−xAl_x)C (x=0.10, 0.25, 0.50, 0.75, 0.86), has been synthesized by a solid-state reaction between W_1−xAl_x alloys and carbon at around 1673 K in vacuum. Environment scanning electron microscope, energy-dispersive analysis of X-ray, X-ray photoelectron spectroscopy, and inductively coupled plasma analyses are used to certify the formation of the products. The mechanism of the solid-state reaction is also discussed. (W_1−xAl_x)C is identified to crystallize in the hexagonal space group P6m2 (No. 187) and belongs to the WC structure type. The atoms of W and Al occupy the same lattice site (1a site) in the cell of (W_1−xAl_x)C. The cell parameters for each specimen in the phase of W-Al-C are quite close to that of WC, while their densities are far lower than that of WC.     

Synthesis and structural characterization of Al4Si2C5-homeotypic aluminum silicon oxycarbide, (Al6−xSix)(OyC5−y) (x∼0.8 and y∼1.6)

We have prepared a new layered oxycarbide, [Al_5.25(5)Si_0.75(5)][O_1.60(7)C_3.40(7)], by isothermal heating of (Al_4.4Si_0.6)(O_1.0C_3.0) at 2273 K near the carbon-carbon monoxide buffer. The crystal structure was characterized using X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound is trigonal with space group R3?m (centrosymmetric), Z=3, and hexagonal cell dimensions a=0.32464(2) nm, c=4.00527(14) nm and V=0.36556(3) nm³. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The reliability indices were R_wp=4.45% (S=1.30), R_p=3.48%, R_B=2.27% and R_F=1.25%. The crystal is composed of three types of domains with nearly the same fraction, one of which has the crystal structure of space group R3¯m. The crystal structure of the remaining two domains, which are related by pseudo-symmetry inversion, is noncentrosymmetric with space group R3m.     

Homoatomic Clustering in the Intermediate Valence Compounds Yb1−yAl3−xSix and Yb1−yAl3−xGex

Two new phases, Yb_1−xAl_3−xSi_x and Yb_1−yAl_3−xGe_x, were found by systematic investigations of the according ternary systems. The crystal structures of Yb_1−yAl_2.8Si_0.2 and Yb_1−yAl_2.8Ge_0.2 (defect HT-PuAl₃ type) were studied by X-ray powder methods (CuKα₁ radiation, λ=1.54056 Å, hexagonal system, space group P6₃/mmc (No. 194), a=6.009(1) and 6.015(1) Å, c=14.199(2) and 14.241(5) Å, V=444.0(2) and 446.2(3) ų, 93 and 92 reflections, and 8200 and 8000 profile points for silicide and germanide, respectively). Full profile refinements with 11 and 13 structural parameters resulted in R_I=0.049 and 0.054, and R_p=0.088 and 0.104, respectively. The ternary structures are distorted closest packings in comparison with the binary YbAl₃ compound with AuCu₃-type structure. They are characterized by the formation of Al₃-, Si₃-, and Ge₃-homoatomic clusters and aluminum networks. Magnetization measurements show that both the silicide and germanide are valence fluctuation compounds with enhanced electronic density of states at the Fermi level similar to the binary YbAl₃. The characteristic maximum of the magnetic susceptibility increases from ≈120 K for YbAl₃ to ≈140 K for Yb_1−yAl_2.8Si_0.2or Yb_1−yAl_2.8Ge_0.2 and further to ≈150 K for Yb_1−yAl_2.75Si_0.25. The S-shape of the electrical resistivity curves is also characteristic of valence fluctuations.     

A reagentless DNA biosensor based on cathodic electrochemiluminescence at a C/CxO1−x electrode

A reagentless signal-on electrochemiluminescence (ECL) biosensor for DNA hybridization detection was developed based on the quenching effect of ferrocene (Fc) on intrinsic cathodic ECL at thin oxide covered glassy carbon (C/C_xO_1−x) electrodes. To construct the DNA biosensor, molecular beacon (MB) modified with ferrocene (3′-Fc) was attached to a C/C_xO_1−x electrode via the covalent bound between labeled amino (5′-NH₂) and surface functional groups. It was found that the immobilization of the probe on the electrode surface mainly depended on the fraction of surface carbonyl moiety. When a complementary target DNA (cDNA) was present, the stem-loop of MB on the electrode was converted into a linear double-helix configuration due to hybridization, resulting in the moving away of Fc from the electrode surface, and the restoring of the cathodic ECL signal. The restoration of the ECL intensity was linearly changed with the logarithm of cDNA concentration in the range of 1.0 × 10⁻¹¹ to 7.0 × 10⁻⁸ M, and the detection limit was ca. 5.0 pM (S/N = 3). Additionally, single-base mismatched DNA can be effectively discriminated from the cDNA. The great advantage of the biosensor lies in its simplicity and cost-effective with ECL generated from the electrode itself, and no adscititious luminophore is required.