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1.
通过传统降温法生长了不同EDTA和KCl剂量掺杂的KDP晶体,并观察了晶体的光散射情况,测定了晶体柱区样品的透过率和晶体中Fe、Cr、Cl三种杂质元素的含量,结果表明:低浓度的EDTA(0.01 mol;)和KCl(<1.5 mol;)掺杂可以提高晶体的透过率,但高浓度掺杂(0.01 mol;EDTA, 2.0 mol; KCl)会导致晶体散射严重,透过率降低,KCl浓度达到2.5 mol;后晶体生长受到抑制,晶体缺陷严重;晶体中铁Fe3+、Cr3+的总含量随着掺杂浓度的增加而减少,晶体中并没有发现Cl元素存在.  相似文献   

2.
作为第二代半导体材料,GaAs晶体自60年前被发现以来已广泛应用于激光、通讯和显示等领域,并发展出液封提拉法、水平布里奇曼法、垂直梯度凝固法等多种生长工艺.本文总结了GaAs晶体的最新研究进展,探讨了各种生长方法的特点及其应用,重点报道了GaAs晶体坩埚下降法生长的研究成果.坩埚下降法具有一炉多产、易操作、低成本等优点,已成为GaAs晶体产业化的重要途径.掺杂不仅能调节GaAs晶体的性能,还会对晶体生长产生重要影响.本文还给出了Bi、Si、Zn等掺杂GaAs晶体生长结果,探讨了它们的性能、缺陷以及在不同领域里的应用.  相似文献   

3.
为了用提拉法生长出质量优良的衫掺杂钨酸铅晶体,通过理论分析,实践论证,确定了生长晶体的工艺参数.温度梯度采用较成熟工艺,讨论晶体的生长速度和旋转速度.晶体生长速度为2 ~5mm/h;晶体旋转速度为35 ~50r/min;以45℃/h的速度降至室温,同时保持30r/min的旋转速度.得到了不同浓度衫掺杂的表观透明,无碎裂淡粉红色的钨酸铅晶体,且目前得到晶体的最大尺寸为φ25mm×40 mm.  相似文献   

4.
采用传统降温方法生长了不同Ni2+掺杂浓度的KDP晶体.实验发现当Ni2+掺杂浓度小于1000 ppm时溶液的稳定性随着掺杂浓度的增加而提高,大于1000 ppm时溶液的稳定性开始下降,但仍高于纯态溶液的稳定性;随着Ni2+浓度的增加KDP晶体柱面的生长死区增加,柱面的生长速度略有下降,但在生长过程中没有观察到晶体的楔化;KDP晶体的XRD分析及缺陷的研究表明Ni2+对晶体的结构影响不明显,但晶体中的缺陷和内应力增加.  相似文献   

5.
采用坩埚下降法生长了LED用硅掺杂<511>取向的GaAs晶体.选用带籽最槽的PBN坩埚作为生长容器,密封在石英安瓶中以防止生长过程中As蒸汽挥发.研究了掺杂工艺、固液界面形貌和生长缺陷.结果表明:孪晶化是硅掺杂GaAs晶体生长的主要问题.探讨了孪晶形成机理,优化了生长工艺,成功获得了直径2英寸高质量的硅掺杂GaAs晶体,双摇摆曲线显示所得晶体的FWHM为40 arcsec.  相似文献   

6.
针对KDP晶体生长过程中常出现的SO2-4,NO-3和Cl-杂质,采用传统法和快速法掺杂生长了一系列KDP晶体,研究了不同阴离子杂质掺杂对KDP晶体X和Z向的电导率的影响.结果表明,X向的电导率比Z向电导率高;未掺杂时,快速生长的KDP晶体比传统法生长的KDP晶体具有更高的电导率; SO2-4的掺杂增大了晶体在两个方向的电导率,且随着掺杂浓度的增加,晶体的电导率也相应增大;NO-3和Cl-对KDP晶体的电导率影响不大.分析认为,快速生长的KDP晶体具有更高的缺陷浓度,从而增大了晶体的电导率;SO2-4具有与PO3-4结构的相似性,从而能够取代部分PO3-4进入晶格,从而产生H+空位.H+空位的定向移动能增大晶体的电导率.而NO-3和Cl-与PO3-4结构差异较大,很难取代进入PO3-4晶格,因此NO-3和Cl-对KDP晶体的电导率影响不大.  相似文献   

7.
通过研究晶体生长工艺参数对Nb∶KTiOPO4(Nb∶KTP)晶体生长的影响,用熔盐顶部籽晶法获得尺寸为55mm×25mm×5mm的Nb∶KTP透明单晶.研究中发现熔体的温度梯度、籽晶和降温速率将严重影响Nb∶KTP晶体的生长.Nb离子的引入不利于Nb∶KTP晶体的生长,尤其是造成晶体易开裂,且沿a轴方向生长速度非常缓慢.同时,Nb的引入大大改变Nb∶KTP晶体的倍频性能.掺杂Nb浓度的摩尔分数为13;时,Nb∶KTP晶体的倍频的Ⅱ型相位匹配的截止波长缩短至937nm,且有效产生469nm倍频蓝光;掺杂Nb浓度的摩尔分数为3;时,Nb∶KTP晶体对Nd∶YAG的1.0642μm激光倍频的最佳相位匹配角为θ=88.32°,()=0°,非常接近90°非临界相位匹配方向.  相似文献   

8.
采用二价Ca离子作为电荷补偿离子由提拉法生长出了具有高光学质量的调Q开关晶体Cr4+∶YAG并对该晶体进行了退火研究.吸收光谱测量表明原生态晶体中已有少量Cr4+离子存在.晶体经空气中退火后Cr4+离子浓度和1.06μm处的吸收系数均显著提高.晶体生长和退火实验显示出晶体中Cr4+离子的浓度不仅取决于掺杂的Cr3+离子的浓度,而且同晶体中的Ca/Cr浓度比密切相关.  相似文献   

9.
本文报道了用坩埚下降法生长Fe:LiNbO3晶体的新工艺.通过选择合适的原料配比、控制固液界面的温度梯度为20~40℃/cm及晶体生长速度0.8~1.5mm/h,生长出掺杂0.04mol;Fe2O3的无宏观缺陷LiNbO3单晶.XRD图谱和DTA曲线用来表征所得晶体,并且测定了从晶体下部到上部的紫外可见吸收光谱.结果表明:沿生长方向,晶胞参数a、c增大,熔点降低,晶体中的Fe2+浓度呈增加趋势,作者分析了造成成分不均匀分布的原因.  相似文献   

10.
Nb:KTiOPO4晶体的生长和倍频性能   总被引:3,自引:0,他引:3  
通过研究晶体生长工艺参数对Nb∶KTiOPO4(Nb∶KTP)晶体生长的影响,用熔盐顶部籽晶法获得尺寸为55mm×25mm×5mm的Nb∶KTP透明单晶.研究中发现熔体的温度梯度、籽晶和降温速率将严重影响Nb∶KTP晶体的生长.Nb离子的引入不利于Nb∶KTP晶体的生长,尤其是造成晶体易开裂,且沿a轴方向生长速度非常缓慢.同时,Nb的引入大大改变Nb∶KTP晶体的倍频性能.掺杂Nb浓度的摩尔分数为13%时,Nb∶KTP晶体的倍频的Ⅱ型相位匹配的截止波长缩短至937nm,且有效产生469nm倍频蓝光;掺杂Nb浓度的摩尔分数为3%时,Nb∶KTP晶体对Nd∶YAG的1.0642μm激光倍频的最佳相位匹配角为θ=88.32°,()=0°,非常接近90°非临界相位匹配方向.  相似文献   

11.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

12.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

13.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

14.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

15.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

16.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

17.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

18.
19.
Crystal chemical characteristics of the α and β modifications of Zn2V2O7 are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn2V2O7 unit cell in the temperature range of 300–600°С, α V =–17.94 × 10–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn2V2O7 is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.  相似文献   

20.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

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