The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Highly oriented (100) thin films of LaVO₃ and La_1−xSr_xVO₃ have been fabricated by pulsed laser deposition in a reducing atmosphere. The films show a transition from insulating to metallic behaviour in the composition region of x, 0.175<x<0.200. In the single crystals of the antiferromagnetic insulating phase, a first-order structural phase transition is observed few degrees below the magnetic transition, which manifests itself as a kink in the temperature dependence of resistivity. In the highly oriented thin films of LaVO₃ and La_1−xSr_xVO₃ fabricated on lattice matched substrates in this study, the structural phase transformation in the insulating phase has been suppressed. The electrical conduction is found to take place via hopping through localized states at low temperatures. The metallic compositions show a non-linear (T^1.5) behaviour in the temperature dependence of resistivity. V (2p) core level spectra of these films show a gradual change in the relative intensities of V³⁺ and V⁴⁺ ions as the value of x increases.     

Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates

BaTiO₃ thin films with different thickness have been grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel method. X-ray diffraction analyses show that the BaTiO₃ thin films are polycrystalline. The crystalline quality of the films is improved with increasing thickness. The infrared optical properties of the BaTiO₃ thin films have been investigated using an infrared spectroscopic ellipsometry in the wave number range of 800-4000 cm⁻¹ (2.5-12.5 μm). By fitting the measured pseudodielectric functions with a three-phase model (Air/BaTiO₃/Pt), and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index of the BaTiO₃ thin films increases and on the other hand, the extinction coefficient does not change with increasing thickness in the entirely measured wave number range. The dependence of the refractive index on the film thickness has been discussed in detail and was mainly due to both the crystalline quality of the films and packing density. Finally, the absorption coefficient was calculated in the infrared region for applications in the pyroelectric IR detectors.     

Crystallographic and magnetic structures of Y0.8Sr2.2Mn2GaO8−δ: a new vacancy-ordered perovskite structure

The anion-deficient perovskite Y_0.8Sr_2.2Mn₂GaO_8−δ (where δ∼0.1) has been synthesised and the crystal and magnetic structures determined by Rietveld analysis of neutron powder diffraction (NPD) data. The material has body-centred tetragonal symmetry (I4/mmm, a=7.6373(3) Å and c=15.6636(10) Å) and consists of alternating layers of octahedral and tetrahedral polyhedra, the layers being perpendicular to [001]. The octahedral layers are preferentially occupied by manganese and the tetrahedral layers are a mixture of manganese and gallium. The precise cation distribution depends critically on preparative conditions. An unusual structural feature of these materials is the arrangement of oxygen vacancies in the tetrahedral layers: in the basic structure, isolated squares of corner-linked tetrahedra are formed instead of the chains that are observed in brownmillerite phases. Additional oxide ions in this layer probably allow the Mn ions to achieve distorted square pyramidal coordination. Low temperature NPD and magnetisation data indicate antiferromagnetic ordering below 100 K.     

Immiscibility in the Fe3O4-FeCr2O4 spinel binary

A recent thermodynamic model of mixing in spinel binaries, based on changes in cation disordering (x) between tetrahedral and octahedral sites [Am. Mineral. 68 (1983) 18, 69 (1984) 733], is investigated for applicability to the Fe₃O₄-FeCr₂O₄ system under conditions where incomplete mixing occurs. Poor agreement with measured consolute solution temperature and solvus [N. Jb. Miner. Abh. 111 (1969) 184] is attributed to neglect of: (1) ordering of magnetic moments of cations in the tetrahedral sublattice antiparallel to the moments of those in the octahedral sublattice and (2) pair-wise electron hopping between octahedral site Fe³⁺ and Fe²⁺ ions. Disordering free energies (ΔG_D), from which free energies of mixing are calculated, are modeled by

     

Characterization of new-layered Cr(III)-doped chlorocadmiumphosphate, Cd(HPO4)Cl·[H3N(CH2)6NH3]0.5 crystal by EPR and optical studies

Cr(III)-doped Cd(HPO₄)Cl·[H₃N(CH₂)₆NH₃]_0.5, a new-layered cadmium phosphate, is synthesized in acidic condition at room temperature. EPR and optical studies are carried out at room temperature. Polycrystalline EPR spectrum reveals the presence of two sites of Cr(III) ions in this layered phosphate lattice with zero-field splitting values of 24.24 and 7.65 mT, indicating that Cr(III) ions are in distorted octahedral sites. The optical absorption spectrum of the sample indicates near octahedral symmetry for the dopant ions. Crystal field, inter-electronic and bonding parameters are evaluated by collaborating EPR and optical data. The evaluated parameters suggest the mode of entry of Cr(III) ion into the layered phosphate as interstitial site, and bonding between the metal and ligand is partially covalent.     

Structure refinement of large domain relaxors in the Pb(Mg1/3Ta2/3)O3-PbZrO3 system

The relaxor ferroelectric compound Pb(Mg_0.3Ta_0.6Zr_0.1)O₃ (PMT-PZ) was studied by X-ray, neutron and electron diffraction and transmission electron microscopy in the as-sintered and annealed states. The as-sintered sample was comprised of nanometer-sized 1:1 chemically ordered domains dispersed in a disordered matrix. After annealing at 1325°C the domain size increased to ∼30 nm and the degree of order exceeded 95% in terms of the volume fraction of the ordered domains, yet the sample retained its diffuse, frequency dependent relaxor characteristics. Refinements of the chemically ordered structure using the Rietveld analysis revealed that the octahedral (B) site occupancies were in excellent agreement with a “random site” model for the chemical ordering. In this charge-balanced model for the 1:1 ordered Pb(β′_1/2β″_1/2)O₃ structure the Ta cations predominantly occupy the β″ site, while the β′ site is populated by a random distribution of the Mg, Zr and remaining Ta cations. Large temperature factors for Pb and O atoms are observed in both as-sintered and annealed samples, indicating localized displacements of the Pb and O atoms. The mixed occupancy of the β′ position appears to be responsible for the relaxor characteristics in the dielectric response in spite of the growth of the chemical domains.     

Spectroscopic and crystal field studies of (Ce,Gd)Sc3 (BO3)4:Cr crystals

Complex spectroscopic studies of (Ce,Gd)Sc₃(BO₃)₄:Cr³⁺ (CSB:Cr³⁺) crystals (crystal growth, absorption and luminescence spectroscopy, crystal field calculations, analysis of the radiative and non-radiative decays) are presented. The main results of the paper include calculations of crystal field parameters and energy level scheme for Cr³⁺ at distorted octahedral Sc³⁺ sites, evaluation of the Huang-Rhys factor, effective phonon frequency, zero-phonon line energy, and parameters of radiative and non-radiative decays. Comparison with experimental results and other literature data is discussed. A very unusual value of the frequency factor (related to the non-radiative processes) is explained as being due to heterodesmic nature of chemical bonds in the CSB crystal. Cr³⁺-doped CSB crystals (with Cr³⁺ concentration 5.1×10¹⁹ cm⁻³ or 1%) are suggested as promising candidates for potential applications as active media for solid state lasers.     

Synthesis and characterization of Co7(OH)12(C2H4S2O6)(H2O)2—a single crystal structural study of a ferrimagnetic layered cobalt hydroxide

A novel layered hydrotalcite-like material, Co₇(H₂O)₂(OH)₁₂(C₂H₄S₂O₆), has been prepared hydrothermally and the structure determined using single crystal X-ray diffraction (a=6.2752(19) Å, b=8.361(3) Å, c=9.642(3) Å, α=96.613(5)°, β=98.230(5)°, γ=100.673(5)°, R1=0.0551). The structure consists of brucite-like sheets where 1/6 of the octahedral sites are replaced by two tetrahedrally coordinated Co(II) above and below the plane of the layer. Ethanedisulfonate anions occupy the space between layers and provide charge balance for the positively charged layers. The compound is ferrimagnetic, with a Curie temperature of 33 K, Curie-Weiss θ of −31 K, and a coercive field of 881 Oe at 5 K.     

Crystal field analysis of the absorption spectra and electron-phonon interaction in Ca3Sc2Ge3O12:Ni

Exchange charge model of crystal field [B.Z. Malkin, in: A.A. Kaplyanskii, B.M. Macfarlane (Eds.), Spectroscopy of Solids Containing Rare-earth Ions, North-Holland, Amsterdam, 1987, pp. 33-50.] was used to analyze the energy level schemes of Ni²⁺ ion at both possible positions (octahedral and tetrahedral) in Ca₃Sc₂Ge₃O₁₂. The crystal field parameters were calculated from the crystal structure data; the crystal field Hamiltonian was diagonalised in the complete basis consisting of 25 wave functions of all LS terms of the Ni²⁺ ion. Results of calculations are in a good agreement with experimental data. From the experimental spectra available in the literature, the Huang-Rhys parameter S=3.5 and effective phonon energy were evaluated for the octahedral Ni²⁺ ion.     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

Effect of magnetic film thickness on rectifying properties of La0.8Sr0.2MnO3/TiO2 heterostructures

The La_0.8Sr_0.2MnO₃ (LSMO)/ TiO₂ heterostructures with different thicknesses of the LSMO films were successfully synthesized using the RF magnetron sputtering technique. Excellent rectifying characteristics are presented in all heterostructures in a wide temperature range. The differences of the diffusive potentials for three heterojunctions are very little at 300 K. The samples exhibit a high resistance that plays an important role on their rectifying properties. The diffusive potential decreases with increasing temperature. The result is attributed to both the reduction of the thickness of the deletion layer due to the thermal diffusion and the modulation of the interfacial electronic structure of the heterostructures. The metal-insulator (M-I) transition is observed clearly from the single LSMO layers and the LSMO/ TiO₂ p-n heterojunctions.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

Electron paramagnetic resonance of gamma irradiated [(CH3)4N]InCl4 and [(CH3)4N]2CdCl4 single crystals

Gamma irradiated [(CH₃)₄N]InCl₄ and [(CH₃)₄N]₂CdCl₄ single crystals were investigated by electron paramagnetic resonance at ambient temperature, and it has been found that both compounds indicate the existence of (CH₃)₃N⁺ radicals. The g factors were found to be isotropic, and the hyperfine constant for H atoms was measured as 2.86 mT and is isotropic for this radical in these substances. The hyperfine coupling constant of the N nucleus with the hole in (CH₃)₃N⁺ in [(CH₃)₄N]InCl₄ was found to be anisotropic with the A_zz=2.92, A_yy=1.62 and A_xx=1.40 mT. From these, it has been revealed that the C_3v-axis of (CH₃)₃N⁺ radical performs rotational or jumping reorientational motions around a fixed axis, in addition to the rotations of protons in CH₃ groups and the rotational motions of CH₃ groups around the C_3v-axis of the radical. The g, and the hyperfine coupling factors of the N nucleus were isotropic in (CH₃)₃N⁺ in [(CH₃)₄N]₂CdCl₄. This indicates the motional behaviour of the radical in this compound is as in a liquid. This isotropic behaviour of the hyperfine coupling constants was found to be same until the attainable lowest temperature of 113 K in our laboratory.     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

Spatial charge distribution and conductivities of the LaAlO3/SrTiO3 interfaces: A theoretical study

The electronic properties of the charge carriers at the LaAlO₃/SrTiO₃ interfaces are investigated by first principles studies. For the n-type interface, the carriers are located only on the SrTiO₃ side. For the p-type interface, the carriers are highly localized at the interface. A critical thickness of the LaAlO₃ overlayer exists, below which, the interface is insulating. Moreover, we show that the effective masses and mobilities of the carriers are spatially anisotropic and have a strong disparity for the two types of carriers. These results are consistent with experimental observations and are explained by the band structures and alignments of the consisting oxides and their interaction at the interfaces.     

Spectroscopic characterization, conductivity and relaxation anomalies in the Li2O-MgO-B2O3 glass system: Effect of nickel ions

Glass samples of the system, Li₂O-MgO-B₂O₃ containing different concentrations of nickel oxide (ranging from 0 to 1.0 mol%) were prepared by using the melt quenching technique. The optical absorption studies indicate that the nickel ions occupy both tetrahedral and octahedral positions in the glass network. However, the octahedral positions seem to be dominant when the concentration of nickel oxide is ?0.4 mol% in the glass matrix. When in the octahedral positions, nickel ions occupy the network modifying positions. This has a tremendous effect on the thermoluminescence, electrical conductivity and magnetic susceptibility studies. Electrical measurements were carried out as a function of frequency and temperature over the frequency range of 10-10⁶ Hz and a temperature range of 303-523 K. The electric modulus formalism was applied to study the relaxation behavior by using the impedance data for all the samples at 403 K, and also for analyzing the relaxation behavior of the highest conducting sample (0.4 mol% of nickel oxide) at different temperatures. An attempt has been made to relate the measured properties to the structural modifications in the glass network due to the modifying effect of octahedral Ni²⁺ ions.     

Electronic structure and transport of Ca3Co2O6 and Ca3CoNiO6

We have calculated the band structure of Ca₃Co₂O₆ and Ca₃CoNiO₆ by using the self-consistent full-potential linearized augmented plane-wave method within density function theory and the generalized gradient approximation for the exchange and correlation potential. The spin-orbit interaction is incorporated in the calculations using a second variational procedure. The relation of these band structure calculations to thermoelectric transport is discussed. The results illustrate that transport is highly anisotropic with much larger mobility in the a-b plane than out of the a-b plane, and the introduction of Ni in Ca₃Co₂O₆ alters its electronic structure and its thermoelectric transport properties.     

Molecular dynamics simulation of phase transition in AgNO3

Structural phase transition in AgNO₃ at high temperature is simulated by molecular dynamics. The simulations are based on the potentials calculated from the Gordon-Kim modified electron-gas formalism extended to molecular ionic crystals. AgNO₃ transforms into rhombohedral structure at high temperature and the phase transition is associated with the rotations of the NO₃ ions and displacements of the NO₃ and Ag ions.     

Optical spectrum, local lattice structure and EPR g factors for Cr impurity ions in MgTiO3 and LiTaO3

On the basis of the 120×120 complete energy matrices for a d³ configuration ion in a trigonal ligand field, for Cr³⁺ ions doped in MgTiO₃ and LiTaO₃, the local structures and EPR g factors of the octahedral (CrO₆)⁹⁻ clusters have been studied, respectively. By simulating the calculated optical spectra and the EPR spectra data to the experimental results, local structure parameters are obtained. The calculated results show that although the local lattice structures around the M (M=Mg²⁺, Ta⁵⁺) ions are obviously different, after Cr³⁺ replacing the M, the local lattice structures around the Cr³⁺ ions are quite similar and close to those of the Cr₂O₃. This may be ascribed to the fact that the octahedral Cr³⁺ center in MgTiO₃:Cr³⁺ and LiTaO₃:Cr³⁺ systems and that in Cr₂O₃ exhibit similar octahedral (CrO₆)⁹⁻ clusters. Moreover, the corresponding theoretical values of the optical spectra have been reported. It is also found that the orbital reduction factor k is very important to understand the EPR g factors for Cr³⁺ ions doped in MgTiO₃ and LiTaO₃.     

Physical studies on composites Ag7I4VO4-Al2O3

The electrical properties of the solid electrolytes Ag₇I₄VO₄-Al₂O₃ (0-40 mol% Al₂O₃) are investigated. The electrical conductivity, dielectric constant and dielectric loss are increased by increasing the concentration of Al₂O₃; showing a maximum at 30 mol% Al₂O₃. The conductivity is found to be increased by decreasing the particle size of Al₂O₃. The results are explained using the random resistor network model (RRN). This is due to the formation of a highly conducting interface layer along the matrix-particle interface. This layer is destroyed at concentrations higher than 30 mol% Al₂O₃.