Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

AFM and electronic transport studies of swift heavy ion irradiated Mn/p-Si bilayer structure

Mn/p-Si structures have been realised by electron beam evaporation of manganese on etched and cleaned p-Si wafers. Bilayer structures have been irradiated by swift heavy ions (of 100 MeV Fe⁷⁺ having a fluence of 1 × 10¹³ ions/cm²). The electronic transport features across the bilayer of the structure (i.e. I–V characteristics across the Mn/p-Si interface) show a significant increase of current (by two orders of magnitude) for the irradiated ones as compared to un-irradiated ones. I–V characteristics across the interface has also been recorded in presence of in-plane (i.e., along the plane of the interface) magnetic field which show a significant magnetic field sensitivity for the irradiated ones. The surface morphological studies from AFM show a granular structure with open face having micro-particles in it, prior to the irradiation and round shaped embedded granular structure after the irradiation. XRD data show the formation of manganese silicide (Mn₅Si₂). The results are understood in the realm of interfacial intermixing which is tailored by the swift heavy ion irradiation.     

羧甲基-β-1,3-葡聚糖对人肝癌HepG2细胞的放射增敏作用

本研究旨在探讨羧甲基-β-1,3葡聚糖（CMG）对人肝癌HepG2细胞X射线或12C6+离子束辐射敏感性的影响。首先用CCK-8法检测CMG对HepG2细胞的生长抑制情况,得到半数抑制浓度（IC50）为120.6μg/mL。用浓度为0.1×IC50的CMG预处理HepG2细胞24 h,再给予2 Gy X射线或12C6+离子束辐照（CMG+辐照组）;CMG未处理组直接接受2 Gy X射线或12C6+离子束辐照（辐照组）。对比分析辐照组和CMG+辐照组细胞的克隆存活、DNA损伤、凋亡与周期分布、细胞内活性氧（ROS）水平。发现:与X射线辐照组相比,相同剂量的12C6+离子辐照组克隆存活率更小,DNA损伤和周期阻滞更加严重,细胞凋亡率和细胞内ROS水平也更高。与单独X射线或12C6+离子束辐照组相比,CMG+辐照组克隆存活率明显降低,细胞凋亡率随辐照后CMG作用时间的延长而明显增加,CMG使辐照后细胞内ROS维持在一个较高的水平,同时CMG明显加重了单独辐照诱导的DNA损伤和周期阻滞。结果表明,与X射线相比,HepG2细胞对相同剂量的12C6+离子辐射更敏感;CMG可增加HepG2细胞对X射线或12C6+离子辐射的敏感性;CMG可能通过增加受照HepG2细胞内的ROS水平,加剧辐照诱导的DNA损伤,促进辐射诱导细胞凋亡而起到辐射增敏作用。This study aims to investigate the effect of carboxymethy-β-1, 3-glucan (CMG) on the sensitivity of human hepatoma HepG2 cells to X-rays or 12C6+ ions irradiation. First, the inhibitory effect of CMG on the growth of HepG2 cells was detected by CCK-8 assay, and the half maximal inhibitory concentration (IC50) was 120.6 μg/mL. HepG2 cells were pretreated with CMG at a concentration of 0.1×IC50 for 24 h and then irradiated with 2 Gy X-ray or 12C6+ ion beams (CMG + irradiation group). CMG untreated group was directly irradiated by 2 Gy X-rays or 12C6+ ions beam (irradiation group). The clone survival, DNA damage, cell apoptosis, cell cycle distribution, and intracellular reactive oxygen species (ROS) levels in irradiation group and CMG + irradiation group were comparatively analyzed. The results showed that the clone survival rate was lower, DNA damage and cycle arrest were more serious, and the rate of apoptosis and intracellular ROS levels were higher in 12C6+ ions irradiation group than those in the same dose of X-rays irradiation group. Compared with X-rays or 12C6+ ions irradiation group, the clone survival rate of CMG + irradiation group was significantly decreased, and the apoptosis rate significantly increased with the prolongation of CMG treatment post-irradiation; CMG maintained intracellular ROS at a higher level after irradiation, CMG also significantly aggravated radiation-induced DNA damage and cycle arrest. These results indicated that HepG2 cells were more sensitive to 12C6+ ions radiation than those at the same dose of X-rays. CMG increased the sensitivity of HepG2 cells to X-rays or 12C6+ ions irradiation by increasing intracellular ROS level, exacerbating radiation-induced DNA damage and promoting radiation-induced apoptosis in irradiated HepG2 cells.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

TL and PTTL in natural fluorite previously irradiated with gamma rays and heavy ions

The effect of annealing temperature on the phototransfer thermoluminescence (PTTL) signal was studied to determine the appropriate annealing temperature for treating the natural powder before irradiation. The temperatures used to anneal virgin natural fluorite samples (only natural dose without giving the samples any artificial doses) were 150, 250, 350, 450, 550, 650 and 750°C for a duration of 1 h in each case. The results show that the PTTL response did not change for anneal temperatures up to 450°C, but at higher temperatures the signal decreased rapidly. The height of the 90°C peak decreased by two orders of magnitude as the anneal temperature increased from 450 to 750°C, whilst the height of the 180°C peak decreased by three orders of magnitude between the same two annealing temperatures. In order to investigate the effect of previous gamma rays and heavy ion irradiation on thermoluminescence (TL) and PTTL signals, powdered samples of natural fluorite from Cornwall, England, were annealed at 500°C and then irradiated (at GSI, Darmstadt, Germany) with ¹⁶¹Dy ions of energy 13 Mev/n; the range of fluences used was from 10⁴ to 10¹² ion cm⁻². Identical samples were given gamma doses in the range 1 Gy to 2.6 × 10⁴ Gy in order to compare the effects of gamma rays and heavy ions. The sensitivities of TL and PTTL were studied by giving the samples a gamma test dose of 1 Gy after annealing the samples at 500°C for 30 min in order to eliminate the TL resulting from previous gamma or heavy ion irradiation.     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Effects of 230 MeV Au irradiation on Bi2Sr2CaCu2Ox

Bi₂Sr₂CaCu₂O_x tapes were irradiated using 230 MeV Au¹⁴⁺ ions. Columnar defects were presumably produced due to irradiation. Zero-field-cooling (ZFC) magnetization increased up to a fluence of 1.6 × 10¹¹ Au⁺/cm², but field-cooling (FC) magnetization decreased, indicating the strong pinning effects resulting from the columnar defects. The critical current density as well as the irreversibility field, obtained from the hysteresis loops, were enhanced. Irreversibility fields are fitted by H_irr = A exp(−T/T_A). An effective activation energy for flux motion was obtained from the measurements of magnetization relaxation. The features of flux pinning as a result of the columnar defects were compared with those of point defects brought about by 120 MeV O⁷⁺ irradiation.     

2018年7期 电子期刊

采用自蔓延燃烧法制备了不同镨掺杂浓度的12CaO·7Al₂O₃：Pr³⁺（C12A7：Pr³⁺） X射线影像存储荧光粉。在232 nm激发下,发现Pr³⁺掺杂摩尔分数为0.3%的荧光粉位于486 nm的蓝光发射峰呈现最大的发光强度。对C12A7：0.3% Pr³⁺样品进行真空热处理后,C12A7笼中的O^2-基团数量减少,同时类F⁺色心的空笼子的数量增多,导致陷阱数目增加和光激励发光强度增大。热释发光实验表明：C12A7：0.3% Pr³⁺样品中存在两个深陷阱,陷阱深度分别约为0.69 eV和0.80 eV;经过真空热处理后的C12A7：0.3% Pr³⁺荧光粉,陷阱深度变深,陷阱数目增多,光存储性能变好。当吸收的X射线剂量为5.2 Gy时,可以实现分辨率较高的X射线成像。实验结果表明,镨掺杂C12A7荧光粉在计算机X射线摄影领域有潜在的应用前景。     

Electrical characterization of argon-ion sputtered n-GaAs

Epitaxially grown n-type GaAs was sputtered with 0.5 keV Ar ions at doses of 10¹² and 10¹⁵ ions/cm². The sputter-induced defects in the GaAs were characterized using deep-level transient spectroscopy (DLTS) and the effect of these defects on the characteristics of Au Schottky barrier diodes (SBD's) fabricated on the sputtered GaAs was evaluated by current-voltage measurements. It was found that the barrier height of the SBD's decreased with ion dose from 0.97 eV for unsputtered diodes to 0.48 eV after sputtering at a dose of 10¹⁵/cm². DLTS showed the presence of a multitude of sputter-induced defects at and near the GaAs surface. The defects formed during the initial stages of sputtering had the same properties as some of the primary defects introduced during electron and proton irradiation of GaAs. Isochronal annealing at temperatures of up to 350°C showed that although some defects were removed by annealing, others appeared.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

Enhanced performances of ZnO-TFT by improving surface properties of channel layer

Top-contact thin film transistors with ZnO as the channel layer and thermally grown SiO₂ as the gate dielectric were fabricated by using rf sputtering. The performances of ZnO-TFTs with different thicknesses of the active layer were investigated and the optimized condition was obtained. With the active layer thickness from 25 to 70 nm, the leakage current of devices increased from 10⁻¹⁰ to 10⁻⁸ A, and the on/off ratio decreased from 1.2×10⁷ to 2×10⁴. Atomic force microscope research indicated that with the thickness increased, the surface morphology of the active layer improved noticeably at first and then deteriorated. The 25-nm-thick ZnO TFT had the best surface morphology, and showed the best performance with a field effect mobility of 5.1 cm²/V S, on/off ratio of 1.2×10⁷ and threshold voltage of 20 V. This indicates that the surface properties of the channel layer have crucial affects on the performances of ZnO-TFTs.     

The role of alkali ions in the 190 K TSL peak in quartz

The role of alkali ions in the creation of the thermally stimulated luminescence (TSL) peak at 190 K in quartz has been investigated by wavelength resolved TSL and thermally stimulated current (TSC) measurements performed on synthetic crystals, both as grown and hydrogen swept, characterised by alkali content of about 1–3 and 0.1 ppm respectively. The 190 K peak has been efficiently produced in as-grown crystals by a double irradiation procedure consisting of a first x-ray irradiation at 90 K followed by heating in the 170–300 K temperature range and a second irradiation at 90 K; this effect has not been observed in the hydrogen swept crystal. Moreover, the study of the spectral composition of the emitted light has shown the existence of two emission bands, one peaking at 450 nm (T<150 K) and the second one evidenced for T>150 K and peaking at around 380 nm.

In as grown samples, TSC peaks at 205, 260 and at around 350 K (composite structure) have been detected: their intensities are much stronger in the as grown crystal and with the electric field oriented along the z-axis indicating that they have an ionic character. By taking into account the mechanism of formation of the [SiO₄/M⁺]⁰ (M⁺=Li⁺, Na⁺) traps (previously found to be responsible for the 190 K TSL peak), the 205 K TSC peak can be attributed to the radiation induced dissociation of alkalis from [AlO₄/M⁺]⁰ defect centres and subsequent migration near to Si sites; on the other hand, the 260 K TSC peak can be related to the subsequent disintegration of [SiO₄/M⁺]⁰ defects involving the migration of alkalis to different ionic traps.

PACS: 78.60.K–61.72.J–42.70.Ce     

Ion and electron energies in gated field emitter failures

In previous work (1992), the authors studied the characteristics of gated field emitter failures and developed a theory to explain failure initiation. During a failure, the voltage between the emitter tip and gate (spaced 1 μm apart) was found to drop from -140 V to ≈-10 V. The current density was found to be ~10¹² A/m² during the failure, and plumes of ions and electrons were injected into vacuum. The ratio of ion current to electron current was found to be 10%. Those results indicated that the failures were similar to cathodic vacuum arcs. In the present study the energies of the ions and electrons are measured using a retarding potential energy analyzer. The results show that there are ions with energies as high as 80 eV and electrons with energies of 6 eV. The high-energy ions confirm that emitter failures are cathodic vacuum arcs     

Modified model of gate leakage currents in AlGaN/GaN HEMTs

It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord with the FPE model.Therefore,a modified FPE model is developed in which an additional leakage current,besides the gate(Ⅰ_Ⅱ),is added.Based on the samples with different passivations,the Ⅰ_Ⅱ caused by a large number of surface traps is separated from total gate currents,and is found to be linear with respect to(φ_B-V_g)~(0.5).Compared with these from the FPE model,the calculated results from the modified model agree well with the I_g-V_g measurements at temperatures ranging from 295 K to 475 K.     

氢化非晶硅薄膜晶体管的低频噪声特性

针对氢化非晶硅薄膜晶体管(hydrogenated amorphous silicon thin film transistor,a-Si:H TFT)的低频噪声特性展开实验研究.由测量结果可知,a-Si:H TFT的低频噪声特性遵循1/f~γ(f为频率,γ≈0.92)的变化规律,主要受迁移率随机涨落效应的影响.基于与迁移率涨落相关的载流子数随机涨落模型(?N-?μ模型),在考虑源漏接触电阻、局域态俘获及释放载流子效应等情况时,对器件低频噪声特性随沟道电流的变化进行分析与拟合.基于a-Si:H TFT的亚阈区电流-电压特性提取器件表面能带弯曲量与栅源电压之间的关系,通过沟道电流噪声功率谱密度提取a-Si:H TFT有源层内局域态密度及其分布.实验结果表明:局域态在禁带内随能量呈e指数变化,两种缺陷态在导带底密度分别约为6.31×10~(18)和1.26×10~(18)cm~(-3)·eV~(-1),特征温度分别约为192和290 K,这符合非晶硅层内带尾态密度及其分布特征.最后提取器件的平均Hooge因子,为评价非晶硅材料及其稳定性提供参考.     

Development of an intense pulsed metallic ion beam source

Intense pulse metallic ion beams (Al⁺, Cu⁺, and Pb⁺) were produced by a magnetically insulated ion diode having a metal anode. Metal ion plasmas on the anode could be generated through enhanced electron bombardment by using a radial cathode. The energy, current density, and duration time of the lead ion beam were 30~140 keV, ~7.5 A/cm² (total ion current ⩾0.5 kA), and 800 ns, respectively. The ion current density exceeded the space-charge-limited current by a factor of 50. The lead ions in the first-to-sixth states of ionization were detected by a Thomson-parabola ion-spectrometer together with light loss, such as C⁺ and O ⁺. The ratio of the ion current of heavy metals to the total ion current was measured using a magnetic mass analyzer with a charge collector. The ratio was about 90% for a lead ion beam and 20~50% for Al and Cu ion beams     

Study of the electron damage of the MgO(100)-D2O system by ESD

An electron-stimulated desorption (ESD) study of electron damage of a D₂O layer adsorbed on the MgO(100) surface at room temperature is presented. After exposing the surface to D₂O, the surface spectrum shows the main ESD component to be D⁺ ions, with lower intensity signals corresponding to O⁺ and OD⁺ ions. When the surface is simultaneously exposed to heavy water and electron bombardment, there is a rapid initial increase of the D⁺ intensity accompanied by a decrease of the intensity of the O⁺ ions. Electron damage of the surface after exposing to D₂O produces a significant decrease of the D⁺ intensity, while the O⁺ and OD⁺ intensities decrease more slowly. Heavy water adsorption does not change the form of the ion kinetic energy distribution of the O⁺ ions with electron dose, except for a decrease in intensity. Electron damage increases the intensity of the ion kinetic energy distribution of D⁺ again without changing its shape. These experiments show that heavy water adsorption under electron bombardment does not induce any chemistry of the adsorbed species, but enhances the fragmentation rate of the OD species which, in turn, increases the yield of D⁺ ions. Values of total desorption cross-sections for the three ions species are reported.     

Residence time of metal ions generated from microsecond vacuum arcs

Vacuum gaps of 1 mm with lead or copper cathode are fired by a 13 μs duration sinusoidal arc or a 10 μs duration exponentially-decaying arc, and time-of-flight (TOF) ion measurements are made at variable times after the arc ignition. At the lead cathode, Pb⁺ and Pb⁺⁺ ions are generated and the upper limit on the times for Pb⁺ ion detection are 48 μs and 46 μs from the arc ignition for the sinusoidal and exponential arcs, respectively. At the copper cathode, Cu⁺, Cu⁺⁺, and Cu⁺⁺⁺ ions are generated and detected within 15 μs and 13 μs from the arc ignition for the sinusoidal and exponential arcs, respectively. The residence time of the Pb⁺ ions in the ion acceleration region is approximately 35 μs, regardless of the waveform of the arc current. The residence time of the copper ions, described by the time constant of the time-of-flight ion current delay characteristics, is 3 μs     

调幅W(Mo)/Cu纳米多层膜He+离子辐照响应行为

用磁控溅射技术制备不同调幅波长 (L) 的W(Mo)/Cu纳米多层膜,所制膜系在60 keV氦离子 (He⁺) 辐照条件下注入不同剂量: 0, 1×10¹⁷ He⁺/cm², 5×10¹⁷ He⁺/cm². 用X射线衍射仪 (XRD) 和高分辨透射电子显微镜(TEM)表征W(Mo)/Cu纳米多层膜辐照前后微观结构. 研究结果表明: 1) He⁺离子轰击引起温升效应是导致沉积态亚稳相β-W 转变成稳态 α-W相的主因, 而与调幅波长无明确关联; 2) 纳米多层结构中W(Mo) 和Cu膜显现出的辐照耐受性与调幅波长相关, 调幅波长越小, 抗He⁺的辐照性能越强; 3) 在5×10¹⁷ He⁺/cm²注入条件下, 观察到He团簇/泡在纳米结构W(Mo) 和Cu膜中的积聚行为存在明显差异: 在W (Mo) 膜中He团簇/泡的分布与晶粒取向相关, He团簇/泡倾向于沿W (211) 晶面分布; 而Cu膜非晶化且He团簇/泡在其体内呈均匀分布. 关键词： W(Mo)/Cu纳米多层膜 +辐照')" href="#">He⁺辐照 He团簇/泡 相转变