Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation

The steady-state and transient electron transport properties of $\beta $-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructures were investigated by Monte Carlo simulation with the classic three-valley model. In particular, the electronic band structures were acquired by first-principles calculations, which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas (2DEG), and the quantization effect was considered in the $\varGamma $ valley with the five lowest subbands. Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger-Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered. The simulated low-field electron mobilities agree well with the experimental results, thus confirming the effectiveness of our models. The results show that the room temperature electron mobility of the $\beta $-(Al$_{0.188}$Ga$_{0.812}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure at 10 kV$ \cdot$cm$^{-1}$ is approximately 153.669 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and polar optical phonon scattering would have a significant impact on the mobility properties at this time. The region of negative differential mobility, overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it. This work offers significant parameters for the $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure that may benefit the design of high-performance $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure-based devices.     

Constraints on $H_0$ from WMAP and BAO Measurements *

We report the constraints of $H_0$ obtained from Wilkinson Microwave Anisotropy Probe (WMAP) 9-year data combined with the latest baryonic acoustic oscillations (BAO) measurements. We use the BAO measurements from 6dF Galaxy Survey (6dFGS), the SDSS DR7 main galaxies sample (MGS), the BOSS DR12 galaxies, and the eBOSS DR14 quasars. Adding the recent BAO measurements to the cosmic microwave background (CMB) data from WMAP, we constrain cosmological parameters $\Omega_m=0.298\pm0.005$, $H_0=68.36^{+0.53}_{-0.52} {\rm km}\cdot {\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.8170^{+0.0159}_{-0.0175}$ in a spatially flat $\Lambda$ cold dark matter ($\Lambda$CDM) model, and $\Omega_m=0.302\pm0.008$, $H_0=67.63\pm1.30 {\rm km}\cdot{\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.7988^{+0.0345}_{-0.0338}$ in a spatially flat $w$CDM model, respectively. Our measured $H_0$ results prefer a value lower than 70 ${\rm km}\cdot {\rm s}^{-1}\cdot{\rm Mpc}^{-1}$, consistent with the recent data on CMB constraints from Planck (2018), but in $3.1$ and $3.5\sigma$ tension with local measurements of SH0ES (2018) in $\Lambda$CDM and $w$CDM framework, respectively. Our results indicate that there is a systematic tension on the Hubble constant between SH0ES and the combination of CMB and BAO datasets.     

Incommensurate-commensurate magnetic phase transition in double tungstate Li2Co(WO4)2

Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li$_{2}$Co(WO$_{4}$)$_{2}$ samples. Under zero magnetic field, two successive magnetic transitions at $T_{\rm N1}\sim 9.4$ K and $T_{\rm N2}\sim 7.4$ K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li$_{2}$Co(WO$_{4}$)$_{2}$ enters an incommensurate magnetic state with a temperature dependent $\bm k$ between $T_{\rm N1}$ and $T_{\rm N2}$. The magnetic propagation vector locks-in to a commensurate value $\bm k = (1/2, 1/4, 1/4)$ below $T_{\rm N2}$. The antiferromagnetic structure is refined at 1.7 K with Co$^{2+}$ magnetic moment 2.8(1) $\mu_{\rm B}$, consistent with our first-principles calculations.     

在HT-7托卡马克上密度扫描实验中的边界湍流和输运

在HT-7托卡马克上密度扫描实验中使用一个快速扫描气动朗缪尔探针来研究边界湍流和输运。随着中心弦平均等离子体密度的增加，在等离子体边界观察到径向电场剪切增强，径向电场的增强能够解释边界输运的减小和全局粒子约束的改善。粒子约束时间的增加和垂直扩散系数的减小证明粒子输运降低了。在等离子体边界区域发现电离和辐射驱动湍流的特征，表明电离和辐射在湍流驱动过程中具有重要性。     

Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique

Time-of-flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the direct current (DC) and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI$_{3}$ single crystal detector. Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and the hole lifetime is around 6.5 μs-17.5 μs. Hence, the mobility-lifetime product can be derived to be $1.4\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$-$3.9\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias, which arises mainly from the inhomogeneous electric field distribution inside the perovskite. The positive space charge density can then be deduced to increase from 3.1$\times10^{10}$ cm$^{-3}$ to 6.89$\times 10^{10}$ cm$^{-3}$ in a bias range of 50 V-150 V. The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals, and is also helpful in obtaining a rough picture of the internal electric field distribution.     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Critical radius and dipole polarizability for a confined system

The analytical transfer matrix method (ATMM) is applied to calculating the critical radius $r_{\rm c}$ and the dipole polarizability $\alpha_{\rm d}$ in two confined systems: the hydrogen atom and the Hulth\'{e}n potential. We find that there exists a linear relation between $r_{\rm c}^{1/2}$ and the quantum number $n_{r}$ for a fixed angular quantum number $l$, moreover, the three bounds of $\alpha_{\rm d}$ ($\alpha_{\rm d}^{K}$, $\alpha_{\rm d}^{B}$, $\alpha_{\rm d}^{U}$) satisfy an inequality: $\alpha_{\rm d}^{K}\leq\alpha_{\rm d}^{B}\leq\alpha_{\rm d}^{U}$. A comparison between the ATMM, the exact numerical analysis, and the variational wavefunctions shows that our method works very well in the systems.     

Two New Hyperon Coupling Models in the Light of the Massive Neutron Star PSR J0348+0432*

In the context of the relativistic mean field theory, we propose two new hyperon coupling models, namely the limitation model and the potential well depth model, in the light of the observed data for the massive neutron PSR J0348+0432. The radius of PSR J0348+0432 given by the limitation model is found to be $12.52 \text{ km}\sim12.97\text{ km}$, while the radius given by the potential well depth model is found to be $12.19\text{ km}\sim12.89 \text{ km}$. We also calculate the gravitational redshift of PSR J0348+0432 within these two models, for which the limitation model gives $0.346\sim0.391$ and the potential well depth model gives $0.350\sim0.409$. Further exploration of these two models shows that, these two models are almost degenerate for neutron stars lighter than $1.85 M_{\odot}$, and start to give different results for massive neutron stars heavier than $1.85 M_{\odot}$. Therefore, the studies of massive neutron stars could be crucial for discriminating these two models and help deepen our understanding of hyper-nuclear interactions.     

Nuclear dissociation after the O 1s $\rightarrow (^4\Sigma_\text{u}^-)$3sσ excitation in O$_2$ molecules

We investigate the dissociation dynamics of core-excited $\mathrm{O}_2$ molecules using a high-resolution energy-resolved electron-ion coincidence experimental setup. The excited cationic states with two valence holes and one Rydberg electron are created after spectator Auger decay induced by $\mathrm{O}$ 1s $\rightarrow (^4\Sigma_{\rm u}^-)3{\rm s}\sigma$ core excitation in $\mathrm{O}_2$. From the energy correlation between the kinetic energy of the Auger electron and the ion kinetic energy release, we distinguish several dissociation channels. Rather complex dissociation channels of the spectator Auger final states are disclosed, which can be explained by the increased number of the crossing point due to the existence of Rydberg electron. The quantum system will evolve into different dissociation limits at each crossing point between the potential energy curves.     

Characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh-Bénard convection

We study the characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh–Benard convection in′a square cavity by direct numerical simulations.The Rayleigh number range is 1×10⁸≤Ra≤1×10¹³,and the Prandtl number is selected as Pr=0.7 and Pr=4.3.It is found that the temperature fluctuation profiles with respect to Ra exhibit two different distribution patterns.In the thermal boundary layer,the normalized fluctuationθrms/θrms,max is independent of Ra and a power law relation is identified,i.e.,θrms/θrms,max～(z/δ)0.99±0.01,where z/δis a dimensionless distance to the boundary(δis the thickness of thermal boundary layer).Out of the boundary layer,when Ra≤5×10⁹,the profiles ofθrms/θrms,max descend,then ascend,and finally drop dramatically as z/δincreases.While for Ra≥1×10¹⁰,the profiles continuously decrease and finally overlap with each other.The two different characteristics of temperature fluctuations are closely related to the formation of stable large-scale circulations and corner rolls.Besides,there is a critical value of Ra indicating the transition,beyond which the fluctuation hθrmsiV has a power law dependence on Ra,given by hθrmsiV～Ra?0.14±0.01.     

Relativistic calculations on the transition electric dipole moments and radiative lifetimes of the spin-forbidden transitions in the antimony hydride molecule

Calculations on the spectroscopic constants and transition properties of the first three states (${\rm a}^{1}\Delta $, ${\rm b}^{1}\Sigma^{+}$, and X$^{3}\Sigma^-$) of the SbH molecule were performed under the relativistic framework using the exact two-component Hamiltonian (X2C). The potential energy curves in the Franck-Condon region were computed and compared with the previous values. Furthermore, the transition dipole moments for the weak spin-forbidden transitions (${\rm b}0^{+}$-X$_{1}0^{+}$, ${\rm b}0^{+}$-X$_{2}$1, X$_{1}0^{+}$-X$_{2}$1, and X$_{2}$1-${\rm a}$2) were reported. The spontaneous radiative lifetime of the ${\rm b}^{1}\Sigma^{+}$ ($\upsilon '=0$) state was calculated as 163.5 $\pm$ 7.5 μs, which is in reasonable agreement with the latest experimental value of 173 $\pm$ 3 μs. The spontaneous radiative lifetimes of the X$_{2}$1 ($\upsilon '=0$) state and the ${\rm a}$2 ($\upsilon '=0$) state were calculated to be 48.6 s and $\sim 8 $ ms, respectively. Our study is expected to be a benchmark transition property computation for comparison with other theoretical and experimental results. The datasets presented in this paper, including the transition dipole moments, are openly available at https://dx.doi.org/10.11922/sciencedb.j00113.00018.     

Mode-detailed analysis of transmission based directly on Green’s functions

Fisher-Lee relation\hbox{$\bm{t}= {i}\bm{\Gamma}_L^{1/2}\bm{G}\bm{\Gamma}^{1/2}_R$}t=iΓL1/2GΓR1/2is a well-established tool to decode the modeinformation from Green’s function and coupling parameters. Using the Bloch eigen-modes ofthe leads, we show that the\hbox{$\bm{\Gamma}^{1/2}_{L/R}$}ΓL/R1/2term can be expressed by the Bloch eigen-mode vectorsand the wave velocities which give unambiguous algorithm of\hbox{$\bm{\Gamma}^{1/2}_{L/R}$}ΓL/R1/2in the Fish-Lee relation. Using this approach, wepresent an accurate and convenient technique to analyze all transport modes and also thedominant channels of an electronic transport system in tight-binding model. We studygraphene nanoribbon structures to demonstrate the typical application of our technique.     

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Ge and Si p-channel metal--oxide--semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO7340Q, 7325http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057302https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111774Ge substrate, transistor, HfSiON, hole mobilityProject supported by the National Basic Research Program of China (Grant No.~2006CB302704).Ge and Si p-channel metal--oxide--semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO$_{x}$ ($1Ge;substrate;transistor;HfSiON;hole;mobilityGe and Si p-channel metal-oxide-semiconductor field-effect-transistors(p-MOSFETs) with hafnium silicon oxynitride(HfSiON) gate dielectric and tantalum nitride(TaN) metal gate are fabricated.Self-isolated ring-type transistor structures with two masks are employed.W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately.Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor(MOS) capacitors may be caused by charge trapping centres in GeOx(1 < x < 2).Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method.The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V.s) and 81.0 cm2/(V.s),respectively.Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.     

Highly accurate theoretical study on spectroscopic properties of SH including spin–orbit coupling

The multi-reference configuration interaction method plus Davidson correction(MRCI+Q) are adopted to study the low-lying states of SH with consideration of scalar relativistic effect, core-valence(CV) electron correlation, and spin–orbit coupling(SOC) effect. The SOC effect on the low-lying states is considered by utilizing the full Breit–Pauli operator. The potential energy curves(PECs) of 10 Λ–S states and 18 ? states are calculated. The dipole moments of 10 Λ–S states are calculated, and the variation along the internuclear distance is explained by the electronic configurations. With the help of calculated SO matrix elements, the possible predissociation channels of A~2Σ+, c4Σ-and F~2Σ-are discussed. The Franck–Condon factors of A~2Σ~+–X~2Π, F~2Σ~-–X~2Π and E~2Σ~+–X~2Π transitions are determined, and the radiative lifetimes of A~2Σ+and F~2Σ-states are evaluated, which are in good agreement with previous experimental results.     

Impacts of dark energy on constraining neutrino mass after Planck 2018

Considering the mass splittings of three active neutrinos, we investigate how the properties of dark energy affect the cosmological constraints on the total neutrino mass $\sum {m}_{\nu }$ using the latest cosmological observations. In this paper, several typical dark energy models, including ΛCDM, wCDM, CPL, and HDE models, are discussed. In the analysis, we also consider the effects from the neutrino mass hierarchies, i.e. the degenerate hierarchy (DH), the normal hierarchy (NH), and the inverted hierarchy (IH). We employ the current cosmological observations to do the analysis, including the Planck 2018 temperature and polarization power spectra, the baryon acoustic oscillations (BAO), the type Ia supernovae (SNe), and the Hubble constant H₀ measurement. In the ΛCDM+$\sum {m}_{\nu }$ model, we obtain the upper limits of the neutrino mass $\sum {m}_{\nu }\lt 0.123\,\mathrm{eV}$ (DH), $\sum {m}_{\nu }\lt 0.156\,\mathrm{eV}$ (NH), and $\sum {m}_{\nu }\lt 0.185\,\mathrm{eV}$ (IH) at the 95% C.L., using the Planck+BAO+SNe data combination. For the wCDM+$\sum {m}_{\nu }$ model and the CPL+$\sum {m}_{\nu }$ model, larger upper limits of $\sum {m}_{\nu }$ are obtained compared to those of the ΛCDM+$\sum {m}_{\nu }$ model. The most stringent constraint on the neutrino mass, $\sum {m}_{\nu }\lt 0.080\,\mathrm{eV}$ (DH), is derived in the HDE+$\sum {m}_{\nu }$ model. In addition, we find that the inclusion of the local measurement of the Hubble constant in the data combination leads to tighter constraints on the total neutrino mass in all these dark energy models.     

Geometric quantities of lower doubly excited bound states of helium

Expectation values of single electron and interelectronic geometric quantities such as $\langle r\rangle$, $\langle r_{12}\rangle$, $\langle r_<\rangle$, $\langle r_>\rangle$, $\langle \cos\theta_{12}\rangle$ and $\langle \theta_{12}\rangle$ are calculated for doubly excited $2{\rm p}n{\rm p}\,{}^1P^{\,\rm e}\,(3\leq n\leq5),\, 2{\rm p}n{\rm p}\,{}^3\!P^{\,\rm e}\,(2\leq n\leq5)$ and $2{\rm p}n{\rm d}\,{}^{1,3}D^{\,\rm o}\,(3\leq n\leq5)$ states of helium using Hylleraas-$B$-spline basis set. The energy levels converge to at least 10 significant digits in our calculations. The extrapolated values of geometric quantities except for $\langle \theta_{12}\rangle$ reach 10 significant digits as well; $\langle \theta_{12}\rangle$ reaches at least 7 significant digits using a multipole expansion approach. Our results provide a precise reference for future research.     

Quantum diffusion in semi-infinite periodic and quasiperiodic systems

This paper studies quantum diffusion in semi-infinite one-dimensional periodic lattice and quasiperiodic Fibonacci lattice. It finds that the quantum diffusion in the semi-infinite periodic lattice shows the same properties as that for the infinite periodic lattice. Different behaviour is found for the semi-infinite Fibonacci lattice. In this case, there are still C（t） - t^-δ and d（t） - t^β. However, it finds that 0 〈δ 〈 1 for smaller time, and δ = 0 for larger time due to the influence of surface localized states. Moreover, β for the semi-infinite Fibonacci lattice is much smaller than that for the infinite Fibonacci lattice. Effects of disorder on the quantum diffusion are also discussed.     

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.     

New two-fold integration transformation for the Wigner operator in phase space quantum mechanics and its relation to operator ordering

Using the Weyl ordering of operators expansion formula (Hong-Yi Fan, \emph{ J. Phys.} A {\bf 25} (1992) 3443) this paper finds a kind of two-fold integration transformation about the Wigner operator $\varDelta \left( q',p'\right) $ ($\mathrm{q}$-number transform) in phase space quantum mechanics, $\iint_{-\infty}^{\infty}\frac{{\rm d}p'{\rm d}q'}{\pi }\varDelta \left( q',p'\right) \e^{-2\i\left( p-p'\right) \left( q-q'\right) }=\delta \left( p-P\right) \delta \left( q-Q\right),$ and its inverse% $ \iint_{-\infty}^{\infty}{\rm d}q{\rm d}p\delta \left( p-P\right) \delta \left( q-Q\right) \e^{2\i\left( p-p'\right) \left( q-q'\right) }=\varDelta \left( q',p'\right),$ where $Q,$ $P$ are the coordinate and momentum operators, respectively. We apply it to study mutual converting formulae among $Q$--$P$ ordering, $P$--$Q$ ordering and Weyl ordering of operators. In this way, the contents of phase space quantum mechanics can be enriched. The formula of the Weyl ordering of operators expansion and the technique of integration within the Weyl ordered product of operators are used in this discussion.