Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laser

Excitonic-emission lines and edge-emission bands of highly cubic-structured ZnS crystals doped with iodine, have been observed using an Xe-Cl excimer laser capable of band-to-band excitation at 77 or 4.2 K. A free- exciton line at 3.801 eV, and prominent bound-exciton lines at 3.792, 3.729 and 3.701 eV were resolved well. It is tentatively suggested that the 3.792 eV line is due to excitons bound to a relatively shallow donor, whilst both the 3.729 and 3.701 eV lines may be due to excitons bound to deep acceptors found in the self-activated blue-luminescence band. Time-resolved studies suggest that the edge emissions consist of LO—phonon-replicated free-to-bound and donor-acceptor pair recombinations, and that as a result a common acceptor is involved.     

Studies of relaxation times of secondary radiations in ZnTe by circular polarization correlation

Population and spin relaxation rates concerned with exciton luminescence and multiple LO-phonon emission lines are studied in ZnTe at 77 K by means of optical circular polarization correlation between the exciting and emitted lights. The decay times of the LO lines are determined to be much less than 10^-11sec, which are definitely shorter than the obtained exciton lifetime of 10^-10-10^-9sec. It is concluded that the LO lines are not due to hot luminescence but due to resonance Raman scattering.     

Resonant exciton trapping at impurity states in silver bromide

Excitation spectra near the indirect exciton edge of AgBr at 1.8K are reported for several luminescence lines from weakly localized excitons. Excitation below the exciton absorption threshold reveals several excited bound exciton states the energetic positions of which are determined. For excitation above the threshold, strong energy dependent structure is observed. It is interpreted in terms of resonant trapping of free excitons in both ground and excited bound exciton states associated with emission of LO(Γ), long wavelength acoustic and intervalley TA(X) and LA(X) phonons as well as combinations and overtones of these. From measurements in doped crystals two bound exciton systems are found to be correlated with Cd²⁺ and Ca²⁺, respectively.     

不同激发密度下CdS晶体的光致发光和受激发射

本文主要研究在77-111K温度范围内、不同激发密度的N2激光器的337.1nm谱线激发下,激子-激子(Ex-Ex)、激子-载流子(Ex-e)的相互作用和发射一个LO声子(Ex-1LO)、两个LO声子(Ex-2LO)的自由激子的辐射复合行为.并在77K温度下观测到由Ex-Ex发射产生的受激发射.     

Hot-exciton spectra in TlBr and TlCl

The luminescence excitation spectra of the direct exciton resonance emissions are measured for TlBr and TlCl at 1.8 K. A remarkable oscillation structure with a period of the Γ-point LO phonon energy is observed. Such a hot exciton effect is explained on the basis of the characteristic energy band structure of TlBr and TlCl.     

Photoluminescence decay and time-resolved spectroscopy of cubic yttria-stabilized zirconia

The time-resolved spectra and luminescence decays of cubic yttria-stabilized zirconia single crystals were investigated in the 100–300 K temperature range. At each temperature the time-resolved spectra are dominated by a yellow-orange broad band with a shoulder in the green region, and their shapes appear similar to those displayed in fluorescence. In addition, the shapes remain almost independent of the delay times over the range between 0.04 and 0.4 ms after excitation. The luminescence decays can be satisfactorily described by the superposition of two exponential functions, as well as by two expressions commonly given for decays related to disorder. In the three cases, the temperature dependences of the time constants and the other parameters derived from these expressions are analyzed. The time constants can be accounted for by assuming a radiative decay from two metastable levels with a typical separation of 0.057±0.005 eV. Some correlations between the parameters from the luminescence-decay formulae are given. The results are in good agreement with luminescence due to radiative recombinations at donor F-type levels in which complexes formed by oxygen vacancies in a disordered sublattice are involved.     

Luminescence and electronic excitation energy migration in stilbene crystals

Absorption and luminescence spectra are reported for various conditions. A new band occurs at the short-wave edge of the luminescence spectrum above 90 ° K, which probably represents the short-wave component of the exciton radiation. Reabsorption has a marked effect on the energy distribution in the luminescence spectrum.     

Resonant Raman scattering from screened longitudinal optical phonons in EuTe

Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying ‘effective’ carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements.     

Analysis of LO and TO phonon assisted free exciton luminescence in silicon

Linefits are made of LO and TO phonon assisted free exciton luminescence spectra in silicon. The temperature range covered is 1.55–4.0 K. Values of the recombination rates, the phonon energy splitting, the intrinsic line broadening, and the exciton ground state splitting are deduced. The splitting of the indirect ground state is found to be 0.31±0.03 meV.     

Short-wavelenght luminescence and thermostimulated processes in single crystals of BeO

The results of a study of thermostimulated luminescence and recombination processes in pure and impure single crystals of BeO are reported. The origin of the trapping and recombination centers, their parameters (activation energies, frequency factors), the recombination schemes and the TL spectra were determined. It was shown that, in the BeO single crystals during electron and hole recombinations, the excitation of the intrinsic luminescence band at 4.9 eV proceeds and its characteristics inherit no properties from the recombination centers.     

Photoluminescence of mercurous halides

Mercurous halides show strong orange luminescence at 77°K when excited at energies above the fundamental absorption edge. At room temperature this luminescence is strong only in the chloride and bromide. Spectral features, including band maxima and half widths of both excitation and emission spectra are also temperature dependent. At 77°K a strong green luminescence was observed from the Hg₂Cl₂. Both Hg₂F₂ and Hg₂I₂ exhibited weak green emission, while no luminescence was observed from Hg₂Br₂ in this spectral region. The common orange luminescence is tentatively attributed to structural defects unique to mercurous salts, while the green emission is ascribed to an unspecified impurity center.     

Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices

Laser excited hot electrons in GaAs relax by LO phonon emission within a few hundred femtoseconds, leading to a series of peaks in the distribution of hot electrons in the conduction band, which we observe in luminescence. We find that the luminescence peaks shift according to the acceptor binding energy for C?, Ge?, Zn?, and Be-p-doped GaAs layers grown by MBE and LPE. Thus we prove that recombination is between hot electrons and neutral acceptors. The series of peaks due to electrons from the heavy hole band agree well with $\text{k}\text{.}\text{p}$ band structure, while peaks due to those from light holes are about 15 meV lower than expected from the band structure. We show that the discrepancy is not due to heating or surface fields. The peak separation in the luminescence ladder is about 6% larger than the LO energy suggesting emission of renormalised LO phonons. We find thermalisation by LO emission also in GaAs nipi doping superlattices. In nipi crystals the emission is shifted to higher energies (by 12 meV for light and by 6 meV for heavy holes) due to a change in band structure caused by the space charge fields.     

Electron-hole drops in A2B6 compounds with blende type structure

Evidence of electron-hole drops (EHD) in ZnTe, ZnSe and ZnS single crystalsof blende type structure based on studies of luminescence and optical gain measurements under laser excitation is presented. It is established that at T =4.2 K the luminescence and the inverse population of the most pure crystals near the self-absorption edge is due to the radiative recombination of EHD. The main parameters of the drops in these materials are obtained by comparison of experimental and theoretical luminescence spectra.     

Indirect exciton luminescense and Raman scattering in CdI2

Intrinsic luminescence and Raman scattering in 4HCdI₂ have been investigated at 2 K. Weak emission bands observed near the absorption edge are attributed to the phonon-assistes indirect exciton luminescence. Several new Raman lines are observed under resonant excitation in addition to known lines. The symmetry of the phonon modes associated with the indirect transitions as well as with Raman scattering is discussed.     

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al_0.45Ga_0.55As layers onn ⁺  -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.     

A 385–500 GHz SIDEBAND-SEPARATING (2SB) SIS MIXER BASED ON A WAVEGUIDE SPLIT-BLOCK COUPLER

We have developed a 385–500 GHz sideband-separating (2SB) mixer, which is based on a waveguide split-block coupler at the edge of the H-plane of the 508 μm × 254 μm (WR 2.0) waveguide, for the Atacama Large Millimeter/submillimeter Array (ALMA). An RF/LO coupler, which contains an RF quadrature hybrid, two LO couplers, and an in-phase power divider, was designed with the issue of mechanical tolerance taken into account. The RF/LO coupler was measured optically with a microscope and electrically with a submillimeter vector network analyzer. The image rejection ratio (IRR) and the single-sideband (SSB) noise temperature of the receiver using the RF/LO coupler have also been measured. The IRR was found to be larger than 8 dB and typically ∼ 12 dB in the 385–500 GHz band. The SSB noise temperature of this receiver is 80 K at the band center, which corresponds to 4 times the quantum noise limit (hf/k) in SSB, and 250 K at the band edges. An erratum to this article can be found at     

Edge electroluminescence of single-crystal silicon at 80 K: Structures based on a high-efficiency solar cell

The spectral, kinetic, and energy characteristics of edge luminescence of silicon light-emitting diodes (LEDs) with radiating surface area of 0.055 cm² are studied at a temperature of 80 K over a wide range of pulsed currents. The LEDs are fabricated by cutting a high-efficiency solar cell. In contrast to a number of less effective silicon LEDs studied earlier, the external quantum efficiency of our LEDs at a fixed current at 80 K is higher than that at 300 K and its maximum value is about 0.4%. Despite the occurrence of Auger recombination, a record-high emissive power per unit surface area P = 0.2 W/cm² is attained at a pulsed current of 12 A. It is shown that this record value is achieved largely because the mechanism of radiative recombination is changed at large currents. The conditions are analyzed under which the free-exciton luminescence is changed to electron-hole plasma luminescence.     

Temperature,injection level,and frequency dependences of the luminescence in lightly - and heavily-doped CdTe:In

The temperature dependence, injection level dependence, and modulation frequency response of cathodoluminescence have been measured in Te-rich CdTe:In for materials with In concentrations ranging from 3 × 10¹⁵cm^?3 to 1 × 10¹⁸cm^?3. In lightly-doped material, the 80 K luminescence shows sharp band-edge emission near 1.57 eV and a broad impurity-defect band near 1.4 eV. As temperature increases, the 1.4 eV band quenches out, leaving only the band-edge emission. In heavily-doped material, the band- edge emission is absent and the 80 K luminescence shows only the 1.4 eV band. As the temperature increases from 80 K to 300 K, the 1.4 eV band does not quench out but rather undergoes a complex evolution into a long tail on the band-edge emission which begins to appear at approximately 140 K. At a temperature of 200 K, where the luminescence of the heavily-doped material consists of a broad but structured band approximately 0.2 eV in width, frequency response measurements indicate that band-to-band transitions contribute to the high-energy part of the broad luminescence while the remainder of the band results from slower transitions. The frequency and temperature dependences suggest that the luminescence involves an impurity level that has merged with a band edge at an In concentration of $\text{1 × 10}{}^{18}\text{cm}{}^3$. We interpret this behavior as suggesting that the 1.4 eV luminescence in Te-rich CdTe:In results from a partially-forbidden transition between conduction band and a deep acceptor level rather than from an intracenter type of transition.     

在正向电压激发下ZnSe MIS二极管的自由激子发光

研究了最低温度为20~30K时,在正向电压激发下ZnSe MIS二极管的激子发光光谱,在这一温度下,二极管有可能通过足以产生发光的电流.对于利用通常气相技术生长的高纯晶体所制备的二极管,其电致发光几乎完全由Γ8→Γ6自由激子发光的1LO和2LO声子伴线所组成.根据Gross等人的半经典理论,讨论了两个谱带的形状.结果是谱带的宽度和不对称性归结为激子服从Maxwell-Boltzmann分布,其有效激子温度接近于晶格温度.     

On the role of group I elements in ZnO

Diffusion of Li, Na and K into single-crystal substrates of ZnO was performed. We compare the results with ZnO epitaxial films doped with the respective elements during growth. The diffused and in-situ doped layers were studied using mass spectroscopy and low temperature photoluminescence spectroscopy. Li and Na are known to produce deep acceptor centers which give rise to shallow donor to deep acceptor recombinations in the visible spectral region. We will demonstrate that shallow acceptors are also introduced, having binding energies around 300 meV. A donor–acceptor pair recombination (zero phonon line at 3.05 eV) with LO phonon replica is observed. We further investigated bulk ZnO crystals which contained the deep Li acceptor by thermal treatments under H₂ atmospheres. With increasing annealing temperature shallow donors are introduced as monitored by EPR while the EPR signal of the neutral Li acceptors decreases. Quite unexpectedly, the shallow Li acceptor centre which is not present in the as-grown state is also created. PACS 71.55.Gs; 78.55.Et; 76.30.Da