Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias |
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| Institution: | 1. Department of Physics, Duke University, Box 90305, Durham, NC 27708-0305, U.S.A.;2. Department of Electrical Engineering, Duke University, Box 90391, Durham, NC 27708-0391, U.S.A.;3. Department of Physics, Duke University, Box 90305, Durham, NC 27708-0305, U.S.A. |
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| Abstract: | GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers onn + -GaAs 100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier. |
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