Synthesis and characterization of dithienylbenzobis(thiadiazole)-based low band-gap polymers for organic electronics

New donor-acceptor alternating conjugated polymers were synthesized and characterized. Among them, PCPBBT exhibited a band-gap of 1.01 eV and ambipolar characteristics with μ(h) = 7.1 × 10(-4) cm(2) V(-1) s(-1) and μ(e) = 3.3 × 10(-3) cm(2) V(-1) s(-1).     

Synthesis and characterization of a thiazolo[5,4-d]thiazole-based copolymer for high performance polymer solar cells

A highly processable, new semiconducting polymer, PCDTTz, based on alternating thiazolothiazole and carbazole units was synthesized. The new polymer exhibited a field-effect carrier mobility of up to 3.8 × 10(-3) cm(2) V(-1) s(-1) and bulk heterojunction solar cells made from PCDTTz produced a power conversion efficiency of 4.88% under AM 1.5 G (100 mW cm(-2)) conditions.     

Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 × 10(-4) and -3.1 × 10(-4) cm(2)/V s can be attained, corresponding to the applied gate voltage at -0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 × 10(-6) cm(2)/V(2) s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.     

Spectral Parameters of Nd^3＋ inthe Nd^3＋：GdMgB5O10 Crystal

1 INTRODUCTION With the development of diode-pumped solid-statelasers, the search of more efficient materials for diode-pumped solid-state lasers is becoming more and moreimportant. The good laser materials should have thefeatures of large absorption coefficient and large ab-sorption line widths, as well as large emission crosssection at the emission wavelength. In the past years,a number of Nd3 -doped crystals, such as Nd3 :YVO4 , Nd3 :YAG[2], Nd3 :KLW[3] and Nd3 : [1]YAP…     

High mobility n-channel single-crystal field-effect transistors based on 5,7,12,14-tetrachloro-6,13-diazapentacene

Heteroaromatic oligomer 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) was characterized and assessed as n-channel material in field-effect transistor applications. A single-crystal transistor based on TCDAP as the channel material exhibits a very high electron mobility of 3.39 cm(2) V(-1) s(-1) and an on/off ratio of ～1.08 × 10(4) respectively.     

Spectral Parameters of Nd^3＋ Ion in Nd^3＋：KLu（WO4）2 Crystal

1 INTRODUCTION There has been increasing interest in the re-search of diode laser-pumped solid-state lasers in re-cent years because of the rapid development of highpower diode lasers. Nd:YAG and Nd:YVO crystalsare commercially available, but limited to low Nd3 (= 1 at.%) doping concentration and to narrow ab-sorption bands near the diode emission wavelengthof 808 nm. Therefore, it is necessary to explore moreefficient crystal materials for diode-pumped solid-state lasers. The alkali …     

Synthesis, properties, and OFET characteristics of 5,5'-di(2-azulenyl)-2,2'-bithiophene (DAzBT) and 2,5-di(2-azulenyl)-thieno[3,2-b]thiophene (DAzTT)

Two azulene-based π-conjugated systems, 5,5'-di(2-azulenyl)-2,2'-bithiophene and 2,5-di(2-azulenyl)-thieno[3,2-b]thiophene, were constructed via Suzuki-Miyaura cross-coupling reactions. The crystal structures of both revealed an edge-to-face orientation in a well-defined herringbone packing. The molecules stood nearly perpendicular to the substrate in the film form, with features of an organic field-effect transistor at hole mobilities of up to 5.0 × 10(-2) cm(2) V(-1) s(-1).     

聚苯胺修饰超微盘电极上镉(Ⅱ)的表面络合吸附波

用直径7 μm的碳纤维组合成超微圆盘电极,以聚苯胺修饰电级.以阶梯扫描法、循环伏安法、双阶跃计时电量法和交流阻抗法等,研究了Cd2＋在该电极上的表面络合吸附特性和电极过程.在循环伏安图上出现两个还原峰,实验和理论都证明,由于电极表面的聚苯胺对Cd2＋的特性吸附,形成电活性的表面吸附态络合物.因此,这种表面络合物首先被还原,形成峰电位－0.90 V处的表面络合吸附波,还原峰电位比Cd2＋直接还原电位（－0.98 V）正移,循环反扫时,氧化波无峰形.根据实验数据推测了电极过程的反应机理,证实该还原波具有扩散和表面反应同时控制的表面络合吸附波的特性.理论计算与实验基本一致,并求得了表面吸附态配合物的形成常数、吸附量和表面络合反应的动力学参数.实验还证实,在峰电位－1.06 V 处的还原波,是Cd2＋的表面吸附还原态诱导而产生的催化氢波.     

Electrocatalytic oxidation of NADH based on polyluminol and functionalized multi-walled carbon nanotubes

This work presents that the electrocatalytic oxidation of NADH can be enhanced by the hybrid composites of polyluminol and functionalized multi-walled carbon nanotubes (MWCNTs). The hybrid composites can be easily prepared by the electropolymerization of luminol and the adsorption of functionalized MWCNTs. The modified electrode exhibits two redox couples which can show two electrocatalytic peaks at about 0.1 and 0.3 V (vs. Ag/AgCl) to NADH oxidation. The kinetic constant, k(kin), for the electrocatalytic oxidation of NADH, evaluated by chronoamperometry and voltammetry using a rotating disk electrode (RDE), provided values close to 10(5) M(-1) s(-1). At an applied potential of 0.1 V, the sensor provides a linear response range for NADH from 5 × 10(-6) up to 1.5 × 10(-4) M with a sensitivity of 183.9 μA mM(-1) cm(-2), and detection and quantification limits of 0.6 and 5 μM (S/N = 3), respectively.     

High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing oligoacences

We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μ(h) and μ(e) of 0.11 and 0.15 cm(2)/V·s and 3 having μ(h) and μ(e) of 0.08 and 0.09 cm(2)/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.     

Rational Design of Ambipolar Organic Semiconductors: Is Core Planarity Central to Ambipolarity in Thiophene–Naphthalene Semiconductors?

Herein, we report a new family of naphthaleneamidinemonoimide-fused oligothiophene semiconductors designed for facile charge transport in organic field-effect transistors (OFETs). These molecules have planar skeletons that induce high degrees of crystallinity and hence good charge-transport properties. By modulating the length of the oligothiophene fragment, the majority carrier charge transport can be switched from n-type to ambipolar behavior. The highest FET performance is achieved for solution-processed films of 10-[(2,2'-bithiophen)-5-yl]-2-octylbenzo[lmn]thieno[3',4':4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (NDI-3 Tp), with optimized film mobilities of 2×10(-2) and 0.7×10(-2) cm(2) V(-1) s(-1) for electrons and holes, respectively. Finally, these planar semiconductors are compared with their twisted-skeleton counterparts, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.     

Tuning orbital energetics in arylene diimide semiconductors. materials design for ambient stability of n-type charge transport

Structural and electronic criteria for ambient stability in n-type organic materials for organic field-effect transistors (OFETs) are investigated by systematically varying LUMO energetics and molecular substituents of arylene diimide-based materials. Six OFETs on n+-Si/SiO2 substrates exhibit OFET response parameters as follows: N,N'-bis(n-octyl)perylene-3,4:9,10-bis(dicarboximide) (PDI-8): mu = 0.32 cm2 V(-1) s(-1), Vth = 55 V, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dibromoperylene-3,4:9,10-bis(dicarboximide) (PDI-8Br2): mu = 3 x 10(-5) cm2 V(-1) s(-1), Vth = 62 V, I(on)/I(off) = 10(3); N,N'-bis(n-octyl)-1,6,7,12-tetrachloroperylene-3,4:9,10-bis(dicarboximide) (PDI-8Cl4): mu = 4 x 10(-3) cm2 V(-1) (s-1), Vth = 37 V, I(on)/I(off) = 10(4); N,N'-bis(n-octyl)-2-cyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN): mu = 4.7 x 10(-3) cm2 V(-1) s(-1), Vth = 28, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2): mu = 0.13 cm2 V(-1) s(-1), Vth = -14 V, I(on)/I(off) = 10(3); and N,N'-bis(n-octyl)-2,6-dicyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN2): mu = 0.15 cm2 V(-1) s(-1), Vth = -37 V, I(on)/I(off) = 10(2). Analysis of the molecular geometries and energetics in these materials reveals a correlation between electron mobility and substituent-induced arylene core distortion, while Vth and I(off) are generally affected by LUMO energetics. Our findings also indicate that resistance to ambient charge carrier trapping observed in films of N-(n-octyl)arylene diimides occurs at a molecular reduction potential more positive than approximately -0.1 V (vs SCE). OFET threshold voltage shifts between vacuum and ambient atmosphere operation suggest that, at E(red1) < -0.1 V, the interfacial trap density increases by greater than approximately 1 x 10(13) cm(-2), while, for semiconductors with E(red1) > -0.1 V, the trap density increase is negligible. OFETs fabricated with the present n-type materials having E(red1) > -0.1 V operate at conventional gate biases with minimal hysteresis in air. This reduction potential corresponds to an overpotential for the reaction of the charge carriers with O2 of approximately 0.6 V. N,N'-1H,1H-Perfluorobutyl derivatives of the perylene-based semiconductors were also synthesized and used to fabricate OFETs, resulting in air-stable devices for all fluorocarbon-substituted materials, despite generally having E(red1) < -0.1 V. This behavior is consistent with a fluorocarbon-based O2 barrier mechanism. OFET cycling measurements in air for dicyanated vs fluorinated materials demonstrate that energetic stabilization of the charge carriers results in greater device longevity in comparison to the OFET degradation observed in air-stable semiconductors with fluorocarbon barriers.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

Benzodicarbomethoxytetrathiafulvalene derivatives as soluble organic semiconductors

A series of new tetrathiafulvalene (TTF) derivatives bearing dimethoxycarbonyl and phenyl or phthalimidyl groups fused to the TTF core (6 and 15-18) has been synthesized as potential soluble semiconductor materials for organic field-effect transistors (OFETs). The electron-withdrawing substituents lower the energy of the HOMO and LUMO levels and increase the solubility and stability of the semiconducting material. Crystal structures of all new TTF derivatives are also described, and theoretical DFT calculations were carried out to study the potential of the crystals to be used in OFET. In the experimental study, the best performing device exhibited a hole mobility up to 7.5 × 10(-3) cm(2) V(-1) s(-1)).     

Low-temperature, high-performance, solution-processed indium oxide thin-film transistors

Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature.     

Crystal structure, spin polarization, solid-state electrochemistry, and high n-type carrier mobility of a paramagnetic semiconductor: vanadyl tetrakis(thiadiazole)porphyrazine

We report the synthesis, crystal structure, and magnetic, electrochemical, and carrier-transport properties of vanadyl tetrakis(thiadiazole)porphyrazine (abbreviated as VOTTDPz) with S = ?. X-ray crystal analysis reveals two polymorphs, the α and β forms; the former consists of a 1D regular π stacking, while the latter forms a 2D π network. Molecular orbital calculations suggest a V(4+)(d(1)) ground state and a characteristic spin polarization on the whole molecular skeleton. The temperature dependence of the paramagnetic susceptibility of the α form clearly indicates a ferromagnetic interaction with a positive Weiss constant of θ = 2.4 K, which is well-explained by McConnell's type I mechanism. VOTTDPz forms amorphous thin films with a flat and smooth surface, and their cyclic voltammogram curves indicate a one-electron reduction process, which is highly electrochromic, because of a reduction of the porphyrazine π ring. Thin-film field-effect transistors of VOTTDPz with ionic-liquid gate dielectrics exhibit n-type performance, with a high mobility of μ = 2.8 × 10(-2) cm(2) V(-1) s(-1) and an on/off ratio of 10(4), even though the thin films are amorphous.     

Collisional relaxation of O2(X3Σg(-), υ = 1) and O2(a1Δg, υ = 1) by atmospherically relevant species

Laboratory measurements are reported of the rate coefficient for collisional removal of O(2)(X(3)Σ(g)(-), υ = 1) by O((3)P), and the rate coefficients for removal of O(2)(a(1)Δ(g), υ = 1) by O(2), CO(2), and O((3)P). A two-laser method is employed, in which the pulsed output of the first laser at 285 nm photolyzes ozone to produce oxygen atoms and O(2)(a(1)Δ(g), υ = 1), and the output of the second laser detects O(2)(a(1)Δ(g), υ = 1) via resonance-enhanced multiphoton ionization. The kinetics of O(2)(X(3)Σ(g)(-), υ = 1) + O((3)P) relaxation is inferred from the temporal evolution of O(2)(a(1)Δ(g), υ = 1), an approach enabled by the rapid collision-induced equilibration of the O(2)(X(3)Σ(g)(-), υ = 1) and O(2)(a(1)Δ(g), υ = 1) populations in the system. The measured O(2)(X(3)Σ(g)(-), υ = 1) + O((3)P) rate coefficient is (2.9 ± 0.6) × 10(-12) cm(3) s(-1) at 295 K and (3.4 ± 0.6) × 10(-12) cm(3) s(-1) at 240 K. These values are consistent with the previously reported result of (3.2 ± 1.0) × 10(-12) cm(3) s(-1), which was obtained at 315 K using a different experimental approach [K. S. Kalogerakis, R. A. Copeland, and T. G. Slanger, J. Chem. Phys. 123, 194303 (2005)]. For removal of O(2)(a(1)Δ(g), υ = 1) by O((3)P), the upper limits for the rate coefficient are 4 × 10(-13) cm(3) s(-1) at 295 K and 6 × 10(-13) cm(3) s(-1) at 240 K. The rate coefficient for removal of O(2)(a(1)Δ(g), υ = 1) by O(2) is (5.6 ± 0.6) × 10(-11) cm(3) s(-1) at 295 K and (5.9 ± 0.5) × 10(-11) cm(3) s(-1) at 240 K. The O(2)(a(1)Δ(g), υ = 1) + CO(2) rate coefficient is (1.5 ± 0.2) × 10(-14) cm(3) s(-1) at 295 K and (1.2 ± 0.1) × 10(-14) cm(3) s(-1) at 240 K. The implications of the measured rate coefficients for modeling of atmospheric emissions are discussed.     

Rate constants for the reactions between OH and perfluorinated alkenes

The rate constants for the reactions of OH radicals with fully fluorinated alkenes containing different numbers of -CF(3) groups next to olefinic carbon, CF(2)═CF(2), CF(2)═CFCF(3), CF(3)CF═CFCF(3), and (CF(3))(2)C═CFC(2)F(5), were measured between 230 and 480 K using the flash photolysis resonance fluorescence technique to give the following expressions: k(C(2)F(4))(250-480 K) = 1.32 × 10(-12) × (T/298 K)(0.9) × exp(+600 K/T) cm(3) molecule(-1) s(-1), k(C(3)F(6))(230-480 K) = 9.75 ×10(-14) × (T/298 K)(1.94) × exp(+922 K/T) cm(3) molecule(-1) s(-1), k(trans-C(4)F(8))(230-370 K) = 7.50 × 10(-14) × (T/298 K)(1.68) × exp(+612 K/T) cm(3) molecule(-1) s(-1), k(cis-C(4)F(8))(230-370 K) = 2.99 × 10(-14) × (T/298 K)(2.61) × exp(+760 K/T) cm(3) molecule(-1) s(-1), and k(C(6)F(12))(250-480 K) = 2.17 × 10(-15) × (T/298 K)(3.90) × exp(+1044 K/T) cm(3) molecule(-1) s(-1). The kinetics of the OH reaction in an industrial sample of octofluoro-2-propene (a mixture of the cis- and trans-isomers of CF(3)CF═CFCF(3)) was studied to determine the "effective" reaction rate constant for the typically industrial mixture: k()(230-480 K) = 7.89 × 10(-14) × (T/298 K)(1.71) × exp(+557 K/T) cm(3) molecule(-1) s(-1). On the basis of these results, the atmospheric lifetimes were estimated to be 1.2, 5.3, 21, 34, and 182 days for CF(2)═CF(2), CF(3)CF═CF(2), trans-CF(3)CF═CFCF(3), cis-CF(3)CF═CFCF(3), and (CF(3))(2)C═CFC(2)F(5), respectively. The general pattern of halolalkene reactivity toward OH is discussed.     

High accuracy measurements of OH reaction rate constants and IR absorption spectra: substituted 2-propanols

Rate constants for the gas phase reactions of OH radicals with 2-propanol and three fluorine substituted 2-propanols, (CH(3))(2)CHOH (k(0)), (CF(3))(2)CHOH (k(1)), (CF(3))(2)C(OH)CH(3) (k(2)), and (CF(3))(3)COH (k(3)), were measured using a flash photolysis resonance-fluorescence technique over the temperature range 220-370 K. The Arrhenius plots were found to exhibit noticeable curvature for all four reactions. The temperature dependences of the rate constants can be represented by the following expressions: k(0)(T) = 1.46 × 10(-11) exp{-883/T} + 1.30 × 10(-12) exp{+371/T} cm(3) molecule(-1) s(-1); k(1)(T) = 1.19 × 10(-12) exp{-1207/T} + 7.85 × 10(-16) exp{+502/T } cm(3) molecule(-1) s(-1); k(2)(T) = 1.68 × 10(-12) exp{-1718/T} + 7.32 × 10(-16) exp{+371/T} cm(3) molecule(-1) s(-1); k(3)(T) = 3.0 × 10(-20) × (T/298)(11.3) exp{+3060/T} cm(3) molecule(-1) s(-1). The atmospheric lifetimes due to reactions with tropospheric OH were estimated to be 2.4 days and 1.9, 6.3, and 46 years, respectively. UV absorption cross sections were measured between 160 and 200 nm. The IR absorption cross sections of the three fluorinated compounds were measured between 450 and 1900 cm(-1), and their global warming potentials were estimated.     

An experimental and computational study of the reaction of ground-state sulfur atoms with carbon disulfide

The pulsed laser photolysis/resonance fluorescence technique was used to study the reaction of S((3)P(J)) with CS(2) in an Ar bath gas. Over 290-770 K pressure-dependent kinetics were observed and low- and high-pressure limiting rate constants were derived as k(0) = (11.5-0.0133 T/K) × 10(-31) cm(6) molecule(-2) s(-1) (error limits ± 20%) and k(∞) = (2.2 ± 0.6) × 10(-12) cm(3) molecule(-1) s(-1). Equilibration observed at 690-770 K yields a CS(2)-S bond dissociation enthalpy of 131.7 ± 4.0 kJ mol(-1) at 298 K. This agrees with computed thermochemistry for a spin-forbidden C(2V) adduct, estimated at the coupled-cluster single double triple level extrapolated to the infinite basis set limit. A pressure-independent pathway, assigned to abstraction, was observed from 690 to 1040 K and can be summarized as 1.14 × 10(-10) exp(-37.0 kJ mol(-1)/RT) cm(3) molecule(-1) s(-1) with error limits of ± 40%. The results are rationalized in terms of a computed potential energy surface and transition state theory and Troe's unimolecular formalism.