高应变率压缩下纳米孔洞对金属铝塑性变形的影响研究

本文利用分子动力学模拟方法研究了含纳米孔洞金属铝在[110]晶向高应变率单轴压缩下弹塑性变形的微观过程. 对比单孔洞和完整单晶的模型, 讨论了多孔金属的应力应变关系及其位错发展规律. 研究结果表明, 对于多孔模型的位错积累过程, 位错密度随应变的增加可大致分为两个线性阶段. 由同一个孔洞生成的位错在相互靠近过程中, 其滑移速度越来越小; 随着位错继续滑移, 源自不同孔洞的位错之间开始交叉相互作用导致应变硬化. 达到流变峰应力之后又由于位错密度增殖速率升高发生软化. 当应变增加到11.8%时, 所有孔洞几乎完全坍缩, 并观察到在此过程中有棱位错生成.     

不同加载条件下位错和溶质原子交互作用的数值模拟

动态应变时效,即位错和溶质原子的动态交互作用,对合金材料的力学性质产生重要影响. 本文基于蒙特卡罗方法,建立了“多位错-溶质原子” 二维动力学模型,分别模拟了单位错-恒定应力率、多位错-无应力、多位错-恒定应力和多位错-恒定应力率四种条件下位错和溶质原子的演化过程. 单位错-恒定应力率情况下,低应力率时位错被溶质原子钉扎而无法脱钉,高应力率时位错未被钉扎而一直运动,只有在适当应力率范围内,位错才呈现出反复的钉扎和脱钉;多位错-无应力时,溶质原子向正/负位错的下/上方偏聚;多位错-恒定应力时,位错运动受溶质原子钉扎的影响随应力增大而减小;多位错-恒定应力率时,集群化的钉扎和脱钉过程导致了位错总位移呈现阶梯状的演化. 模拟结果表明：“位错-溶质原子”尺度上呈现了动态应变时效微观过程,与其理论描述相一致. 关键词： 动态应变时效 动力学模型 位错运动     

Towards a further understanding of dislocation pileups in the presence of stress gradients

This study is an essential complement and extension to the stress-gradient concept recently proposed by Hirth. An analytic method is presented for studying the behaviour of double-ended dislocation pileup in the presence of various stress gradients by solving a singular integral equation based on the continuous approximation of dislocations. Four special cases of double-ended pileup in the presence of stress gradients are discussed in detail. The corresponding dislocation distribution, the length of pileup, the total number of dislocations within the pileup and the force on the leading dislocations at the pileup ends are derived, respectively. It is shown that both the number of dislocations and the force on the leading dislocation in a pileup are sensitive to the relative magnitude of stress near the dislocation source and both are less than that in constant stress case. Of particular importance, it is indicated that the small-scaled materials subjected to a stress involving a gradient would be stronger than that under a constant stress. Applied to wire torsion and foil bending, the stress gradient model predicts an increase in the initial yielding, which is in reasonable agreement with the recent experimental data. The proposed stress gradient concept may provide a new physical insight into the size-dependent plasticity phenomena at small length scale.     

The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro‐Raman area mapping. ‘Pop‐in’ bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of the recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is noted, for the first time, as the rate‐limiting factor for the dislocation dynamics initiating the recrystallization process in GaN. Copyright © 2009 John Wiley & Sons, Ltd.     

体心立方金属钽Ⅱ型裂纹尖端缺陷萌生的多尺度分析

本文采用多尺度准连续介质法(quasi-continuum method, QC)模拟体心立方(body-centered-cubic, bcc)金属钽(Ta)Ⅱ型裂纹尖端位错的形核与发射过程,获得位错发射位置与应力强度因子关系曲线,分析裂纹尖端缺陷萌生过程,研究全位错分解以及扩展位错形成机理. 位错活动在不同阶段表现出不一致的特征,新位错的发射对于位错运动具有促进作用. 研究表明,裂纹扩展初始阶段首先萌生点缺陷,点缺陷随着加载强度增加会萌生新的点缺陷,点缺陷最终运动到边界,导致Ⅱ型断裂破坏. 在全位错发射之前有不全位错的形核与发射表明全位错的分解分步进行,从势能曲线上来看,也就是两个极小值点的形成机理不同. 关键词： 多尺度 准连续介质法 Ⅱ型裂纹 扩展位错     

Different types of dislocation dynamics resulting from the dynamic aging of dislocations

The effect of mobile impurities on the dislocation dynamics under static and variable loading of crystals is calculated. It is shown that the dynamic aging of dislocations may produce a specific regime where dislocations are at rest upon static loading and move only under a growing stress. The dislocation mobility in this regime is athermal. The existence conditions for this regime are studied. The dependence of the dislocation path lengths in silicon on the stress pulse rise time that is observed in pulsed-load experiments is explained by the existence of this regime.     

Interaction of dislocation pile-up with a low-angle tilt boundary: a discrete dislocation dynamics study

Abstract

The pile-up of dislocations between two low-angle tilt boundaries (LATB) in an fcc crystal was simulated using three-dimensional discrete dislocation dynamics. The LATB was constructed using glissile edge dislocations stacked on each other. The dislocations in the pile-up were chosen such that their reactions with the dislocations in the LATB resulted in glissile junctions. Parallel pairs of dislocations were inserted to a maximum allowable value estimated from theoretical expressions. A resolved shear stress was applied and increased in steps so as to move the dislocations in the pile-up towards the boundaries. The shear stress required to break the lead dislocation from the wall was determined for varying spacings between the two boundaries. The shear stress and boundary spacing followed the Hall–Petch type relation. Dislocation pile-ups without a LATB were also simulated. The spacing of the dislocations in the pile-up with LATB was found to be closer (ie higher dislocation density) than that without LATB. It was shown through analytical expressions that LATB exerts an attractive force on the dislocations in the pile-up thereby creating a denser pile-up.     

Effect of source strength on dislocation pileups in the presence of stress gradients

The behaviour of a dislocation pileup with a finite-strength source is investigated in the presence of various stress gradients within a continuum model where a free-dislocation region exists around the source. Expressions for dislocation density and stress field within the pileup are derived for the situation where there are first and second spatial gradients in applied stress. For a pileup configuration under an applied stress, yielding occurs when the force acting on the leading dislocations at the pileup tips reaches the obstacle strength, and at the same time, it is required that the source be at the threshold stress for dislocation production. A numerical methodology is presented to solve the underlying equations that represent the yielding conditions. The yield stress calculated for a pileup configuration is found to depend on stress gradients, obstacle spacing and source/obstacle strengths. It increases with increasing the first stress gradient, yet dependent on the second stress gradient. Furthermore, while the dependency of yield stress on the obstacle spacing intensifies with increasing the first stress gradient, it diminishes with an increase of second stress gradient. Therefore, the second stress gradient, as a newly introduced parameter, can provide a new physical insight into the size-dependent plasticity phenomena at small length scales.     

沿〈111〉晶向冲击加载下铜中纳米孔洞增长的塑性机制研究

 用分子动力学方法计算模拟了沿〈111〉晶向冲击加载过程中，单晶铜中纳米孔洞（直径约1.3 nm）的演化及其周围区域发生塑性变形的过程。模拟结果表明，在沿〈111〉晶向冲击加载后，在面心立方（fcc）结构中的4族{111}晶面中有3族发生了滑移。伴随孔洞的增长，在所激活的3族{111}晶面上，观察到位错在孔洞表面附近区域成核，然后向外滑移，其中在剪切应力最大的〈112〉方向上，其位错速度超过横波声速，其它〈112〉方向的位错速度低于横波声速。模拟得到的位错阻尼系数范围与实验值基本符合。由于孔洞周围产生的滑移在空间比较对称，孔洞增长形貌接近球形。在恒定的冲击强度下，孔洞半径增长速率近似保持恒定，其速率随着冲击强度的增加而增大。     

Introducing dislocation climb by bulk diffusion in discrete dislocation dynamics

We report a method to incorporate dislocation climb controlled by bulk diffusion in a three-dimensional discrete dislocation dynamics (DDD) simulation for fcc metals. In this model we couple the vacancy diffusion theory to the DDD in order to obtain the climb rate of the dislocation segments. The capability of the model to reproduce the motion of climbing dislocations is examined by calculating several test-cases of pure climb-related phenomena and comparing the results with existing analytical predictions and experimental observations. As test-cases, the DDD is used to study the activation of Bardeen–Herring sources upon the application of an external stress or under vacancy supersaturation. Loop shrinkage and expansion due to vacancy emission or absorption is shown to be well described by our model. In particular, the model naturally describes the coarsening of a population of loops having different sizes.     

Effect of isotropic stress on dislocation bias factor in bcc iron: an atomistic study

The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a₀/2〈1 1 1〉{1 1 0} screw, a₀/2〈1 1 1〉{1 1 0} edge and a₀〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom.     

Multiscale characterization of dislocation processes in Al 5754

Multiscale characterization was performed on an Al–Mg alloy, Al 5754 O-temper, including in situ mechanical deformation in both the scanning electron microscope and the transmission electron microscope. Scanning electron microscopy characterization showed corresponding inhomogeneity in the dislocation and Mg distribution, with higher levels of Mg correlating with elevated levels of dislocation density. At the nanoscale, in situ transmission electron microscopy straining experiments showed that dislocation propagation through the Al matrix is characterized by frequent interactions with obstacles smaller than the imaging resolution that resulted in the formation of dislocation debris in the form of dislocation loops. Post-mortem chemical characterization and comparison to dislocation loop behaviour in an Al–Cr alloy suggests that these obstacles are small Mg clusters. Previous theoretical work and indirect experimental evidence have suggested that these Mg nanoclusters are important factors contributing to strain instabilities in Al–Mg alloys. This study provides direct experimental characterization of the interaction of glissile dislocations with these nanoclusters and the stress needed for dislocations to overcome them.     

Understanding acoustoplasticity through dislocation dynamics simulations

The acoustoplastic effect in metals is routinely utilised in industrial processes involving forming, machining and joining, but the underlying mechanism is still not well understood. There have been earlier suggestions that dislocation mobility is enhanced intrinsically by the applied ultrasound excitation, but in subsequent deliberations it is routinely assumed that the ultrasound merely adds extra stresses to the material without altering its dislocation density or intrinsic resistance to deformation. In this study, a dislocation dynamics simulation was carried out to investigate the interactions of dislocations under the combined influence of quasi-static and oscillatory stresses. Under such combined stress states, dislocation annihilation is found to be enhanced leading to larger strains at the same load history. The simulated strain evolution under different stress schemes also closely resembles certain previously obtained experimental observations. The discovery here goes far beyond the simple picture that the ultrasound effect is merely an added-stress one, since here, the intrinsic strain-hardening potency of the material is found to be reduced by the ultrasound, through its effect on enhancing dislocation annihilation.     

Core structure and Peierls stress of the 90° dislocation and the 60° dislocation in aluminum investigated by the fully discrete Peierls model

The core structure, Peierls stress and core energy, etc. are comprehensively investigated for the $90^\circ$ dislocation and the $60^\circ$ dislocation in metal aluminum using the fully discrete Peierls model, and in particular thermal effects are included for temperature range $0\leq T \leq 900$ K. For the $90^\circ$ dislocation, the core clearly dissociates into two partial dislocations with the separating distance $D\sim 12$ Å, and the Peierls stress is very small $\sigma_{\rm p}<1$ kPa. The nearly vanishing Peierls stress results from the large characteristic width and a small step length of the $90^\circ$ dislocation. The $60^\circ$ dislocation dissociates into $30^\circ$ and $90^\circ$ partial dislocations with the separating distance $D\sim 11$ Å. The Peierls stress of the $60^\circ$ dislocation grows up from $1$ MPa to $2$ MPa as the temperature increases from $0$ K to $900$ K. Temperature influence on the core structures is weak for both the $90^\circ$ dislocation and the $60^\circ$ dislocation. The core structures theoretically predicted at $T=0$ K are also confirmed by the first principle simulations.     

Inhomogeneity of misfit stresses in nickel-base superalloys: Effect on propagation of matrix dislocation loops

It is shown experimentally that, during annealing and creep under low applied stresses, matrix dislocation loops frequently cross-glide. The periodic length of the zigzag dislocations deposited in the interfaces is equal to that of the γ/γ′-microstructure. Initially, the zigzag dislocations move in the (001) interface by a combination of glide and climb but then they stop near the γ′-edges and align along ?100?. Reactions of such dislocations lead to the formation of square interfacial networks consisting of ?100? oriented edge dislocations. The complex dislocation movement is explained by the inhomogeneity of the misfit stresses between γ- and γ′-lattices. The tensile components of the stress tensor drive the dislocations through the channel, whereas the shear components near the γ′-edges cause the zigzag movement and the ?100? alignment. The total effect is the most efficient relaxation of the misfit stresses. The results are relevant, especially for single-crystal superalloys of the newest generations, which have an increased γ/γ′-misfit due to the high level of refractory elements.     

单晶硅片中的位错在快速热处理过程中的滑移

研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为.研究表明: 在快速热处理时, 位错在压痕残余应力的弛豫过程中能发生快速滑移; 当快速热处理温度高于1100℃时, 在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离. 我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错, 增加了位错的临界滑移应力, 从而在相当程度上抑制了位错的滑移. 可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度. 关键词： 快速热处理 位错滑移 机械性能 单晶硅     

Dislocation-mediated creep process in nanocrystalline Cu

Nanocrystalline Cu with average grain sizes ranging from ～ 24.4 to 131.3 nm were prepared by the electric brushplating technique.Nanoindentation tests were performed within a wide strain rate range,and the creep process of nanocrystalline Cu during the holding period and its relationship to dislocation and twin structures were examined.It was demonstrated that creep strain and creep strain rate are considerably significant for smaller grain sizes and higher loading strain rates,and are far higher than those predicted by the models of Cobble creep and grain boundary sliding.The analysis based on the calculations and experiments reveals that the significant creep deformation arises from the rapid absorption of high density dislocations stored in the loading regime.Our experiments imply that stored dislocations during loading are highly unstable and dislocation activity can proceed and lead to significant post-loading plasticity.     

单向拉伸作用下Cu(100)扭转晶界塑性行为研究

应用分子动力学方法研究了在不同扭转角度下的Cu（100）失配晶界位错结构,以及不同位错结构对晶界强度的影响.模拟结果表明：小角度扭转晶界上将形成失配位错网,失配位错密度随着晶粒之间的失配扭转角度的增加而增加.变形过程中,位错网每个单元中均产生位错形核扩展.位错之间的塞积作用影响晶界的屈服强度：随着位错网格密度的增加,位错之间的塞积作用增强,界面的屈服强度得到提高.大角度扭转晶界将形成面缺陷,在变形中位错由晶界角点处形核扩展,此时由于面缺陷位错开动应力趋于一致,因此晶界的临界屈服强度趋于定值. 关键词： 扭转晶界 失配位错网 强化机理 分子动力学     

Multiscale dislocation dynamics simulations of shock-induced plasticity in small volumes

Multiscale dislocation dynamics plasticity (MDDP) was used to investigate shock-induced deformation in monocrystalline copper. In order to enhance the numerical simulations, a periodic boundary condition was implemented in the continuum finite element (FE) scale so that the uniaxial compression of shocks could be attained. Additionally, lattice rotation was accounted for by modifying the dislocation dynamics (DD) code to update the dislocations’ slip systems. The dislocation microstructures were examined in detail and a mechanism of microband formation is proposed for single- and multiple-slip deformation. The simulation results show that lattice rotation enhances microband formation in single slip by locally reorienting the slip plane. It is also illustrated that both confined and periodic boundary conditions can be used to achieve uniaxial compression; however, a periodic boundary condition yields a disturbed wave profile due to edge effects. Moreover, the boundary conditions and the loading rise time show no significant effects on shock–dislocations interaction and the resulting microstructures. MDDP results of high strain rate calculations are also compared with the predictions of the Armstrong–Zerilli model of dislocation generation and movement. This work confirms that the effect of resident dislocations on the strain rate can be neglected when a homogeneous nucleation mechanism is included.