Microfabrication using elastomeric stamp deformation

Elastomeric stamp deformation has been utilized for the contact printing (CP) of self-assembled monolayers (SAMs) and, more recently, polymers and proteins. Here, we take advantage of this well-studied phenomenon to fabricate a series of new metal thin-film patterns not present on the original stamp. The rounded patterns are of nanoscale thickness, long-range order, and are created from elastomeric stamps with only straight-edged features. The metal was printed onto the surface of an alpha,omega-alkanedithiol self-assembled monolayer (SAM). The new shapes are controlled by a combination of stamp geometry design and the application of external pressure. Previously published rules on stamp deformation for contact printing of SAMs are invalid because the coating is instead a thin-metal film. This method represents a new pathway to micropatterning metal thin films, leading to shapes with higher complexity than the original lithographic masters.     

Structural and magnetic properties of nano-crystalline FeCoNiN thin films

Iron cobalt nickel nitride (FeCoNiN) thin films are prepared by sol-gel spin coating route. The structural, magnetic and surface properties of the thin films are evaluated. The crystalline nature of thin films was enhanced upon annealing, leading to increased crystallite size. The X-ray diffraction shows mixed phases with crystallite size in the range of 20–26.93 nm. Thin films show ferromagnetism at room temperature. Coercivity and saturation magnetization are in the range of 642–716 Oe and 2.5–7.5 emu/cm³ respectively. Both coercivity and saturation magnetization increased with annealing of thin films. Magnetic properties are related to the crystallinity of thin films. The increase in crystallite size results into an increase of magnetic properties. Rectangular shaped particles are seen on the surface of thin films. The same type of grains can be seen on the surface of thin films which confirmed the formation of FeCoNiN as predicted by XRD. These novel thin films might be used in memory devices and optoelectronic applications.     

Charge-transfer complex coupled between polymer and H-aggregate molecular crystals

Crystal needles of N,N′-bis(1-ethylpropyl)-3,4,9,10-perylenebis(dicarboximide) (EPPTC) are produced through p-stacking and are embedded in the thin film of poly(9,9-din-hexylfluorenyl-2,7-diyl) (PFO) when the blend solution of EPPTC and PFO in p-xylene is spin-coated onto a glass substrate. Charge transfer (CT) complex is resolved from the spectroscopic response of the blend film, which is generated only when the PFO molecules are excited. Thus, the PFO molecules are specified as donors and the H-aggregated EPPTC as acceptors in the formation of CT state (CTS). The emission resulting from the CTS in the red is further recognized by its much longer lifetime than both the intrinsic emission of the individual EPPTC molecules and that of their pure aggregates. Near-field analysis verifies that the CTS form on the boundary between the PFO and the crystal phases. The CT exciton forms by bounding the hole left on HOMO of the donor (PFO) and the indirectly transferred electron to the H-aggregate state of EPPTC, which transits back to the ground state by emitting a photon at about 650 nm. This introduces special physics in the heterojunctions that are coupled with the H-aggregates and mechanisms important for the design of organic photovoltaic devices. © 2013 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2013     

Characteristics of metal/p-SnS Schottky barrier with and without post-deposition annealing

With growing interest in SnS for solar photovoltaic device fabrication, the barrier characteristics to this semiconductor with respect to different metal contacts have become increasingly important. In this work we have studied barrier characteristics of polycrystalline SnS thin films metallized with indium, aluminium, copper and silver under different annealing conditions. Indium has been observed to form ohmic contact to p-SnS under all annealing conditions. With the other three metals, Schottky diodes were fabricated and subsequently the contact parameters were extracted under forward bias using indium top contact under different annealing conditions. Although aluminium formed Schottky contact to polycrystalline SnS, annealing at 350 °C rendered it ohmic. EDX analysis confirmed desulfurization from SnS thin films due to annealing. Breakdown voltages of the Al/SnS Schottky barrier diode were determined and were in the decreasing trend with higher annealing temperature, supporting the increase in the doping profile with annealing temperature. Photoluminescence spectra of SnS films were studied and correlated to surface trap centers generated due to annealing.     

Improved Performance of All-Inorganic Perovskite Light-emitting Diodes via Nanostructured Stamp Imprinting

Halide perovskites are emerging emitters with excellent optoelectronic properties. Contrary to the large grain fabrication goal in perovskite solar cells, perovskite light-emitting diodes (PeLEDs) based on small grain enable efficient radiative recombination because of relatively higher charge carrier densities due to spatial confinement. However, achieving small-sized grain growth with superior crystal quality and film morphology remains a challenge. In this work, we demonstrated a nanostructured stamp thermal imprinting strategy to boost the surface coverage and improve the crystalline quality of CsPbBr₃ film, particularly confine the grain size, leading to the improvement of luminance and efficiency of PeLEDs. We improved the thermal imprinting process utilizing the nanostructured stamp to selectively manipulate the nucleation and growth in the nanoscale region and acquire small-sized grain accompanied by improved crystal quality and surface morphology of the film. By optimizing the imprinting pressure and the period of the nanostructures, appropriate grain size, high surface coverage, small surface roughness and improved crystallization could be achieved synchronously. Finally, the maximum luminance and efficiency of PeLEDs achieved by nanostructured stamp imprinting with a period of 320 nm are 67600 cd/m² and 16.36 cd/A, respectively. This corresponds to improvements of 123 % in luminance and 100 % in efficiency, compared to that of PeLEDs without the imprinting.     

Preparation and Characterization of Thin-Film Solar Cells with Ag/C60/MAPbI3/CZTSe/Mo/FTO Multilayered Structures

New solar cells with Ag/C₆₀/MAPbI₃/Cu₂ZnSnSe₄ (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron-transport layer, active photovoltaic layer, and hole-transport layer were made of C₆₀, CH₃NH₃PbI₃ (MAPbI₃) perovskite, and CZTSe, respectively. The CZTSe hole-transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI₃ films were prepared using a two-step spin-coating method on the CZTSe hole-transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI₃ perovskite films could be substantially improved. Finally, n-type C₆₀ was vacuum-evaporated to be the electronic transport layer. The 50 nm C₆₀ thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density–voltage characteristics were evaluated and compared with the thin-film microstructures. The photo-electronic power-conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin-film solar cell characteristics of open-circuit voltage, short-circuit current density, fill factor, series-resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm², 67.39%, 18.5 Ω and 1.42 mW, respectively.     

甲胺铅碘前驱体薄膜放置过程中物质结构演变及对后续钙钛矿薄膜的影响

系统研究了甲胺铅碘(MAPbI_3)前驱体薄膜在室温大气中放置过程的物质结构变化过程,发现甲胺铅碘前驱体进一步生成了更多的MAPbI_3钙钛矿,大约220 min后MAPbI_3钙钛矿不再增加而且仍有前驱体。此外还分析了这种结构演变对后续钙钛矿薄膜热退火结果的影响,发现放置后的甲胺铅碘前驱体薄膜退火过程中的X射线衍射强度和紫外-可见吸收均比新制备的薄膜的低,而且通过原子力表面形貌图的对比发现,放置后的薄膜热退火后的薄膜晶体尺寸远小于新制备的甲胺铅碘前驱体薄膜热退火后的晶体尺寸,放置后的薄膜晶体尺寸约为0.2μm,新制备的薄膜晶体尺寸约为1.1μm。主要原因在于:甲胺铅碘前驱体薄膜由于在室温大气中放置过程中多生成了部分甲胺铅碘(MAPbI_3),因此晶体成核数量较多,晶粒数量增加,晶体存在较多缺陷,薄膜结晶度低,所以退火时X射线衍射强度和光谱强度较低,同时晶粒尺寸变小。研究为探讨甲胺铅碘钙钛矿生成机理提供了新的思路和方向,属于甲胺铅碘钙钛矿薄膜性质的基础性研究,对实际生产和工业应用有一定指导意义。     

Competing fracture in kinetically controlled transfer printing

Transfer printing by kinetically switchable adhesion to an elastomeric stamp shows promise as a powerful micromanufacturing method to pickup microstructures and microdevices from the donor substrate and to print them to the receiving substrate. This can be viewed as the competing fracture of two interfaces. This paper examines the mechanics of competing fracture in a model transfer printing system composed of three laminates: an elastic substrate, an elastic thin film, and a viscoelastic member (stamp). As the system is peeled apart, either the interface between the substrate and thin film fails or the interface between the thin film and the stamp fails. The speed-dependent nature of the film/stamp interface leads to the prediction of a critical separation velocity above which separation occurs between the film and the substrate (i.e., pickup) and below which separation occurs between the film and the stamp (i.e., printing). Experiments verify this prediction using films of gold adhered to glass, and the theoretical treatment extends to consider the competing fracture as it applies to discrete micro-objects. Temperature plays an important role in kinetically controlled transfer printing with its influences, making it advantageous to pickup printable objects at the reduced temperatures and to print them at the elevated ones.     

Patterned removal of molecular organic films by diffusion

We demonstrate that "contact patterning" subtractively patterns a wide range of molecular organic films of nanoscale thickness with nanometer-scale accuracy. In "contact patterning", an elastomeric stamp with raised features is brought into contact with the organic film and subsequently removed, generating patterns by the diffusion of the film molecules into the stamp. The mechanism of material removal via diffusion is documented over spans of minutes, hours, and days and is shown to be consistently repeatable. Contact patterning provides a photolithography-free, potentially scalable approach to subtractive patterning of a wide range of molecular organic films.     

Atomically flat gold on elastomeric substrate

We present a procedure to fabricate extremely smooth Au films supported on thin elastomeric (PDMS) substrates. Minimum rms roughness and largest grain size are obtained using Si wafers, coated with native oxide and release layers, as templates for the growth of thermally evaporated Au films. The wafers are held at a temperature of 300 degrees C during deposition. The Au films, up to 200 nm thick, are then transferred onto poly(dimethylsiloxane) substrates which have been previously surface-functionalized with a (3-mercaptopropyl)trimethoxysilane adhesion layer. The resulting Au films have been found by AFM to be extremely smooth with rms-roughness 2.5-4 angstroms and to exhibit a crystalline morphology with flat grains >500 nm in size. Thinner films, down to 20 nm, are grown at lower temperature and are comparably smooth, but with a loss in crystalline morphology. We compare the results of this optimized procedure with other gold films grown on mica sheets as templates and to those produced using Ti-O-Si interfacial chemistry.     

Morphological change of crystalline polymer films by annealing: substrate‐ and heating/cooling‐rate‐dependent surface roughness

We study the morphological change of crystalline polymer films by annealing using atomic force microscope, X‐ray diffraction, and Fourier transform infrared spectroscopy techniques. As typical samples, we employ high‐density and low‐density polyethylene films prepared by the cast method. After annealing at 135 °C for 4 h, the surface roughness of polyethylene films by the atomic force microscope significantly increases, and the crystallite size by the X‐ray diffraction also shows some increase, while the Fourier transform infrared spectroscopy spectrum hardly exhibits any change. This can be well explained as a result of the growth of crystal structure by recrystallization during annealing. More interestingly, we find that the choice of the substrate and also the heating/cooling rates for annealing significantly influences the surface roughness of the films. Copyright © 2017 John Wiley & Sons, Ltd.     

微接触印刷法构造金属银的二维和准三维微图纹结构

以聚二甲基硅氧烷（PDMS）有机硅橡胶为弹性印章，以十八烷基三氯硅烷（OTS）正已烷溶液为“墨水”，用微接触印刷分别在普通盖玻片表面和直径为20 mm的试管外表面直接盖印，以及在直径为10 mm的玻璃棒表面进行滚动式微接触印刷盖印.将这些盖好印的基材放在化学镀银液中进行选择性镀银沉积，得到金属银在平面上的二维微结构和在曲面上的准三维微结构.这些微结构的显微照片显示，采用微接触印刷法制备的微图纹结构，图纹转移效率高，精细度很好，特别是微接触印刷操作方法灵活多变，适用于多种形态的表面，是一类实用的微制造方法.     

Nonaqueous nanoscale metal transfer by controlling the stickiness of organic film

Nanoscale metal patterns were successfully reproduced on top of a functional organic layer by a direct metal-transfer technique (DMT). A gold film deposited on the protruding features of a stamp was transferred to the organic layer by controlling its stickiness through a two-step thermal treatment. The process was also suitable for the transfer of highly adhesive metal materials to the stamp surface by using an additional gold layer. Chromium nanowires at 70 nm half-pitch were faithfully produced without any damage to the organic active layer.     

Growth and characterization of (K<Subscript>0.5</Subscript> Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> thin films by a sol–gel method

(K_0.5 Na_0.5)NbO₃ (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO₂/Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.     

Nano silver coated patterned silica thin film by sol–gel based soft lithography technique

We report the fabrication of nano silver coated patterned silica thin film by sol–gel based soft lithography technique. Initially, silica gel film on soda lime silica glass was prepared by dipping technique from a silica sol of moderate silica concentration. A PolydimethylSiloxane elastomeric stamp containing the negative replica of the patterns of commercially available compact disc was used for embossing the film and the embossed film was cured up to 450 °C in pure oxygen atmosphere for oxide film. Finally, a precursor solution of AgNO₃ in water containing polyvinyl alcohol as an organic binder was made and used for coating on the patterned silica film by dipping technique and cured the sample up to 450 °C in reducing gas atmosphere to obtain nano silver layer. The formation of only cubic silver (~4.0 nm) and both cubic silver (~5.2 nm) and silver oxide (~3.6 nm) crystallites at 350 and 450 °C film curing temperatures respectively were confirmed by XRD measurements. The % of nano silver metal and silver oxide were 75.4 and 24.6 respectively. The nano-structured surface feature was visualized by FESEM whereas AFM revealed the high fidelity grating structure of the films. Presence of both spherical and rectangular structure (aspect ratio, 2.37) of nano silver/silver oxide was confirmed by TEM. The films were also characterized by UV–Vis spectral study. The patterned film may find application in chemical sensor devices.     

Effect of annealing on the electrical properties and morphology of a conducting polymer used as an anode in organic light‐emitting devices

The surface sheet resistance of conducting films of glycerol‐doped poly(3,4‐ethylenedioxy‐thiophene)–poly(styrene sulfonate) is largely dependent on the annealing temperature. The presence of free glycerol in insufficiently baked films, as indicated by infrared spectra and thermogravimetric analysis, results in conducting polymer films with poor morphology and low electrical conductivity. The device performance of organic light‐emitting diodes using this modified poly(3,4‐ethylenedioxy‐thiophene)–poly(styrene sulfonate) as an anode is also greatly affected by the baking conditions of the conducting films. The maximum light output, current density, and luminous power efficiency are observed from devices using anodes baked at a high temperature close to the boiling point of glycerol. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2522–2528, 2003     

Controllable Growth of Perovskite Films by Room‐Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells

A two‐step solution processing approach has been established to grow void‐free perovskite films for low‐cost high‐performance planar heterojunction photovoltaic devices. A high‐temperature thermal annealing treatment was applied to drive the diffusion of CH₃NH₃I precursor molecules into a compact PbI₂ layer to form perovskite films. However, thermal annealing for extended periods led to degraded device performance owing to the defects generated by decomposition of perovskite into PbI₂. A controllable layer‐by‐layer spin‐coating method was used to grow “bilayer” CH₃NH₃I/PbI₂ films, and then drive the interdiffusion between PbI₂ and CH₃NH₃I layers by a simple air exposure at room temperature for making well‐oriented, highly crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ca. 800 nm and a high device efficiency of 15.6 %, which is comparable to values reported for thermally annealed perovskite films.     

Crystalline ice growth on Pt(111) and Pd(111): nonwetting growth on a hydrophobic water monolayer

The growth of crystalline ice films on Pt(111) and Pd(111) is investigated using temperature programed desorption of the water films and of rare gases adsorbed on the water films. The water monolayer wets both Pt(111) and Pd(111) at all temperatures investigated [e.g., 20-155 K for Pt(111)]. However, crystalline ice films grown at higher temperatures (e.g., T>135 K) do not wet the monolayer. Similar results are obtained for crystalline ice films of D2O and H2O. Amorphous water films, which initially wet the surface, crystallize and dewet, exposing the water monolayer when they are annealed at higher temperatures. Thinner films crystallize and dewet at lower temperatures than thicker films. For samples sputtered with energetic Xe atoms to prepare ice crystallites surrounded by bare Pt(111), subsequent annealing of the films causes water molecules to diffuse off the ice crystallites to reform the water monolayer. A simple model suggests that, for crystalline films grown at high temperatures, the ice crystallites are initially widely separated with typical distances between crystallites of approximately 14 nm or more. The experimental results are consistent with recent theory and experiments suggesting that the molecules in the water monolayer form a surface with no dangling OH bonds or lone pair electrons, giving rise to a hydrophobic water monolayer on both Pt(111) and Pd(111).     

AFM study of advanced composite materials for organic photovoltaic cells with active layer based on P3HT:PCBM and chiral photosensitive liquid crystalline dopants

Advanced composite materials aimed for construction of organic photovoltaic cells have been studied by atomic force microscopy (AFM). The composites are based on poly(3-hexylthiophene) (P3HT), [6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM) and two different chiral photosensitive liquid crystalline (LC) materials. The objective of the study was to examine the nanoscale morphology of the active layer without and after annealing at specific temperature. The preliminary results of AFM observation of the morphological changes done on the investigated composites revealed an increase in the surface ordering. The surface area ratio decreases for both studied composites, while the basic roughness parameters (S_a and S_q) have been found toughly dependent on the structure of the photosensitive LC dopant.     

Inverted microcontact printing on polystyrene-block-poly(tert-butyl acrylate) films: a versatile approach to fabricate structured biointerfaces across the length scales

The combination of the recently introduced soft lithographic technique of inverted microcontact printing (i-muCP) and spin-coated films of polystyrene- block-poly( tert-butyl acrylate) (PS 690- b-P tBA 1210) as a reactive platform is shown to yield a versatile approach for the facile fabrication of topographically structured and chemically patterned biointerfaces with characteristic spacings and distances that cross many orders of magnitude. The shortcomings of conventional muCP in printing of small features with large spacings, due to the collapse of small or high aspect ratio stamp structures, are circumvented in i-muCP by printing reactants using a featureless elastomeric stamp onto a topographically structured reactive polymer film. Prior to molecular transfer, the substrate-supported PS 690- b-P tBA 1210 films were structured by imprint lithography resulting in lateral and vertical feature sizes between >50 microm-150 nm and >1.0 microm-18 nm, respectively. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and water contact angle measurements provided evidence for the absence of surface chemical transformations during the imprinting step. Following the previously established hydrolysis and activation protocol with trifluoroacetic acid and N-hydroxysuccinimide, amino end-functionalized poly(ethylene glycol) (PEG-NH 2), as well as bovine serum albumin and fibronectin as model proteins, were successfully transferred by i-muCP and coupled covalently. As shown, i-muCP yields increased PEG coverages and thus improved performance in suppressing nonspecific adsorption of proteins by exploiting the high local concentrations in the micro- and nanocontacts during molecular transfer. The i-muCP strategy provides access to versatile biointerface platforms patterned across the length scales, as shown for guided cancer cell adhesion, which opens the pathway for systematic cell-surface interaction studies.