Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell

In this paper, three p–i–n GaAs solar cells were grown and characterized, one with InAs quantum dot (QD) layers embedded in the depletion region (sample A), one with QD layers embedded in the n ⁻ base region (B), and the third without QDs (control sample C). QD-embedded solar cells (samples A and B) show broad photoluminescence spectra due to QD multi-level emissions but have lower open-circuit voltages V _oc and lower photovoltaic (PV) efficiencies than sample C. On the other hand, the short-circuit current density J _sc in sample A is increased while it is decreased in sample B. Theoretical analysis shows that in sample B where the built-in electric field in QDs is zero, electrons tend to occupy QDs and strong potential variations exist around QDs which deteriorate the electron mobility in the n ⁻ base region so that J _sc in sample B is decreased. Hole trapping and electron–hole recombination in QDs are also enhanced in sample B, resulting in a reduced V _oc and thus a worse PV effect. In sample A, a strong built-in field exists in QD layers, which facilitates photo-carrier extraction from QDs and thus J _sc is increased. However, QDs in the depletion region in sample A act also as recombination-generation centers so that the dark saturated current density is drastically increased, which reduces V _oc and the total PV effect. In conclusion, a nonzero built-in electric field around QDs is vital for using QDs to increase the PV effect in conventional p–i–n GaAs solar cells.     

Pool-Frenkel effect and high frequency dielectric constant determination of semiconducting P2O5-Li2MoO4-Li2O and P2O5-Na2MoO4-Na2O bulk glasses

The ternary 70P₂O₅-10Li₂MoO₄-20Li₂O and 70P₂O₅-10Na₂MoO₄-20Na₂O glasses, prepared by the press-melt quenching technique, were studied at temperatures between 298 and 418 K for their high dc electric field properties. For the above purpose, the effect of a strong electric field on the dc conduction of these amorphous bulk samples was investigated using the gap-type electrode configuration. At low electric fields, the current-voltage (I — V) characteristics have a linear shape, while at high electric fields (> 10³ V/cm), bulk samples show nonlinear effects (nonohmic conduction). Current-voltage curves show increasing departure from Ohm’s law with increasing current density, leading to critical phenomena at a maximum voltage (threshold voltage), known as switching (switch from a low-conduction state to a higher-conduction state at threshold voltage). The Pool-Frenkel high-field effect was observed at electrical fields of about 10³–10⁴ V/cm; then the lowering factor of the potential barrier, the high frequency dielectric constant, and the refractive index of these glasses were determined.      

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Effect of high electric field on the dc conductivity of TeO₂-V₂O₅-MoO₃ amorphous bulk samples with different molar ratio of each component was investigated with gap-type electrode arrangement. At low electric fields, the current-voltage (I–V) characteristics has a linear shape, while at high electric fields (>10³ V/cm), bulk samples show nonlinear behavior (nonohmic conduction) and current-voltage characteristics shows increasing deviation from Ohm’s law with increasing current density. High-field effect of Pool-Frenkel type was observed at electrical fields about 10³−10⁴ V/cm. In addition, positive deviation from Pool-Frenkel effect was observed when a field higher than about 10⁴ V/cm was applied.     

Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers

In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*_E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient ^p d*₃₁ and dielectric permittivity ^pε*₃₃. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*_E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.      

Effect of ionizing irradiation on the mechanism of current passage in TlInSe<Subscript>2</Subscript> single crystals

The temperature dependence of the electrical conductivity and current-voltage characteristics of γ-irradiated TlInSe₂ single crystals with an electrical resistivity of ∼10⁸ Ω cm have been investigated. It has been established that the anomalies of the conductivity observed in weak electric fields and at low dozes of irradiation are related to the decomposition of neutral complexes containing an interstitial cation atom. In strong electric fields, a thermal-field ionization of traps occurs. The main mechanism of radiation defect formation is the formation of complexes [V _In⁻In _i ⁺], [V _Se⁻Se _i ⁻], and others with the structural defects characteristic of unirradiated crystals. The activation energy, trap concentrations, and the potential well shape near the traps have been determined.     

Theoretical Study of Electro-Optic Effect and Elasto-Optic Effect in Chirped Fiber Grating with Uniaxial Crystal Materials Cladding

A chirped fiber grating with cladding made of uniaxial crystal material whose optical axis is parallel to the axis of grating, i.e., z-axis is proposed. Electro-optic effect and elasto-optic effect in this kind of fiber gratings are theoretically analyzed for the first time. The influences of the electric field and the strain applied to the fiber grating cladding along z-axis on Bragg wavelength λ _B and the reflectivity spectra of this kind of chirped grating are theoretically examined using coupled-mode theory and transfer matrix method. The curves of Bragg wavelength λ _B as a function of an external electric field or the strain are theoretically obtained respectively for three kinds of uniaxial crystal materials as the grating claddings. The calculated results indicate that when the axial electric field applied to the grating cladding varies from 1 × 10⁷ to 8 × 10⁷ V/m, λ _B has the decreases of 0.12 nm, and when the applied strain varies from 0 to 0.04, λ _B has the decreases of 0.45 nm.     

Nonlinear dynamics of vortices pinned to unidirectional twins

The nonlinear resistive properties of superconductors in the mixed state in the presence of a system of unidirectional planar defects (twins) have been investigated theoretically within the framework of the two-dimensional stochastic model of anisotropic pinning based on the Fokker-Planck equations with a concrete form of the pinning potential. These equations allow one to obtain an exact analytical solution of the problem. Formulas are obtained for experimentally observable even and odd (relative to reversal of the direction of the external magnetic field) nonlinear longitudinal and transverse magnetoresistivities ρ _‖,⊥ ^± ( j,t,α,ε) as functions of the transport current density j, temperature t, the angle α between the directions of the current and the twins, and the relative volume fraction ε occupied by the twins. In light of the great variety of types of nonlinear resistive dependences contained in these expressions for ρ _‖,⊥ ^± the most characteristic of them are presented in the form of graphs with commentary. The desired nonlinear dependences ρ _‖,⊥ ^± are linear combinations of the even and odd parts of the function v(j,t, α,ε), which has the sense of the probability of overcoming the potential barrier of the twins; this makes it possible to give a simple physical treatment of the nonlinear regimes. New scaling relations for the Hall conductivity are obtained and investigated which differ from the previously known relations for isotropic pinning. The interaction of vortex motion directed along the twins and the Hall effect is considered for Hall constants which are arbitrary in magnitude and sign, and it is shown that in the case of small Hall viscosity vortex motion directed along the twins has an effect on the odd magnetoresistivities ρ _‖ ⁻ and ρ _⊥ ⁻ , whereas the reverse effect can be neglected. It is shown that pinning anisotropy is sufficient to manifest the new nonlinear (in the current) magnetoresistivities ρ _⊥ ⁺ and ρ _‖ ⁻ . Zh. éksp. Teor. Fiz. 116, 2103–2129 (December 1999)     

High-sensitivity read-write volume holographic storage in reduced KNbO3 crystals

Reduced KNbO₃ is a photoconductive ferroelectric in which holograms can be recorded by the photorefractive effect. Read-write volume hologram storage and erase sensitivities ofS ⁻¹=100 J/cm² andS ⁻¹=84 J/cm² (S=d(Δn)/d(I₀t)‖_t=0) have been measured at zero applied electric field, where the charge transport is shown to be due to diffusion of photoexcited electrons. By applying an electric field along thec-axis, the migration length of the photoexcited electrons becomes comparable to the holographic grating spacing. This leads to storage sensitivities comparable to high-resolution photographic plates. Experimental data on storage and erase sensitivity as a function of the grating spacing, applied electric field, writing light intensity and temperature are reported and interpreted on the basis of the theoretical results of Young et al. and Amodei. Changes of the intensity ratio of the writing beams by self diffraction (beam coupling), reflections from surfaces and the residual dark conductivity are assumed to cause experimental results which deviate from the theoretical models. It is shown, that in reduced KNbO₃ and other ferroelectric photoconductors having photocarrier transport lengths much larger than the unit cell dimension, photovoltaic currents do not contribute significantly to the build-up of space-charges leading to the photorefractive effect.     

Self-consistent equilibria in a cylindrical reversed-field pinch

Summary A previous investigation by one of us, concerning the self-consistent equilibria of a two-region (plasma+gas) cylindrical Tokamak, is extended to the similar equilibria of a Reversed-Field Pinch, where a significant current density is driven by a dynamo electric field due to turbulence. The previous model has been generalized under the following basic assumptions:a) to the lowest order, the turbulent dynamo electric fieldE ^t is expressed as a homogeneous function of degree 1 of the magnetic fieldB, sayE ^t =α·B, with α being a 2nd-rank tensor, homogeneous of degree 0 inB, and generally depending on the plasma state;b)E ^t does not appear in the plasma power balance, as if it were produced by a Maxwell demon able to extract the needed power from the plasma internal energy. In particular we show that, in the simplest case when both α and the plasma resistivity η are isotropic and constant, the magnetic field turns out force-free with constant abnormality αμ₀/η for vanishing axial electric fieldE _z . This case has also been solved analytically, for whateverE _z , under circular, besides cylindrical, symmetry.     

Measurement of electric field strengths in a waveguide by means of the dynamic Stark effect in hydrogen and neutral helium spectral lines

The dynamic Stark effect of the spectral lines H_β and of the neutral helium lines λ=402.6 nm (2³ P ⁰−5³ D) and λ=438.8 nm (2¹ P ⁰−5¹ D) emitted from a discharge tube was used for probing rf electric fields in a transverse waveguide. Calculations accounting for the pertubation of the atomic states by strong unidirectional fields prove to be suitable in order to interprete the main experimental results. If the waveguide is terminated with a metallic reflector and the plasma in the discharge tube becomes overdense—then representing a slightly permeable mirror—a resonant enhancement of the electric field strength may be achieved by tuning. This enhancement is well recognizable in the spectral line contours.     

Response of Granular La1??xCaxMnO3 Film to 10?GHz and 35?GHz Frequency Electromagnetic Radiation

The nonbolometric response of La_1 − xCa_xMnO₃ film to 10 GHz and 35 GHz frequency electromagnetic radiation is investigated in the case when, in addition to the strong electric field of the wave, the film is subjected to a stationary electric bias field. Dependences of responses on the radiation power P at temperature T = 80 K are presented. In the low power region, a linear dependence of the response on P is observed at both frequencies whereas for high powers the dependence behaves as ~P ^1/2. The obtained results are explained taking into account that the nonbolometric response originates from the intergranular junctions that operate in the reverse current regime. There two effects take place: (i) at low powers the detection resistance decreases with increasing power P, and (ii) at higher powers in addition to that the film resistance decreases as P ^1/2 due to the avalanche of charge carriers in the electric field of the electromagnetic wave.     

Return current instability and its effects on beam-plasma system

The return current induced in a plasma by a relativisitc electron beam generates a new electron-ion two-stream instability (return current instability). Although the effect of these currents on the beam-plasma e-e instability is negligible, there exists a range of wave numbers which is unstable only to return current (RC) instability and not to e-e instability. The electromagnetic waves propagating along the direction of the external magnetic field, in which the plasma is immersed, are stabilized by these currents but the e.m. waves with frequencies,ω ²≪Ω _e ² ≪ω _pe ² (Ω _e andω _pe being cyclotron and plasma frequency for the electrons of the plasma respectively) propagating transverse to the magnetic field get destabilized. Heuristic estimates of plasma heating, due to RC instability and due to decay of ion-acoustic turbulence generated by the return current, are made. The fastest time scale on which the return current delivers energy to the plasma due to the scattering of ion-sound waves by the electrons can be ∼ω _pi ⁻¹ (ω _pi being the plasma frequency for the ions).     

Correlation between the electric-field effect and weak-link type in YBa2Cu3−x Oy and YBa2Cu3−x Oy /Agx high-T c superconducting ceramics

An experimental study is reported of the effect of an electric field E⩽120 MV/m and of temperature T on the critical current I _c and I-V characteristics of yttrium-based high-T _c superconducting ceramics. The materials studied were copper-deficient ceramics, YBa₂Cu_3−x O_y (D samples), and YBa₂Cu_3−x O_y/Ag_x ceramics [S samples with silver present in amounts equal to the copper deficiency (0⩽x⩽0.4)]. It has been established that in D samples at 77 K, the electric field increases I _c and reduces substantially R for I>I _c, whereas in S samples no field effect is observed. Measurements of the I _c(T) dependence near the critical temperature showed that they can be described for all samples by a relation of the type I _c =const(1−T/T _c )^α, where α≈1 for the D samples, and α≈2 for the S samples. The results obtained suggest that the electric-field effect correlates with the existence in the ceramic of SIS-type weak links at grain boundaries. Fiz. Tverd. Tela (St. Petersburg) 40, 1195–1198 (July 1998)     

Kinetics of the formation of gas bubbles during polarization of copper and graphite electrodes in electrolytic aqueous solutions

The adsorption and kinetic processes of the formation of gas bubbles passivating the surface during polarization of copper and graphite electrodes in 1% aqueous solution of sulfuric acid have been investigated. Three stages of the process related to the recharging of the double electric layer—adsorption accumulation of the gas escaping from the surface, the critical nucleation of the gas bubbles, and their subsequent growth—have been revealed, distinguished, and quantitatively estimated. It has been shown that potential leveling at the steady-state value specified by the Tafel equation is unambiguously associated with achievement of the limiting surface area screened by the gas bubbles for each particular current density. The surface diffusion constants D _H = (1.5–4.4) × 10⁻⁴ and (0.1–3.8) × 10⁻⁵ cm²/s of hydrogen on copper and graphite, respectively, and D _O = (1.8–4.5) × 10⁻⁷ cm²/s of oxygen on graphite during the motion toward the drain (the gas bubbles) have been calculated.     

Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions

The pulse characteristics of Hg_0.8Cd_0.2Te n ⁺-p junctions are investigated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by the recombination (generation) of nonequilibrium electrons in the hole region. An increase in the current pulse causes the appearance of an electric field, which draws electrons into the interior of the base region, and leads to variation of their lifetime because of the complex structure of the n ⁺-p junction. Zh. Tekh. Fiz. 67, 130–133 (July 1997     

A symmetry relating certain processes in 2-and 4-dimensional space-times and the value α0 = 1/4π of the bare fine structure constant

The symmetry manifests itself in exact relations between the Bogoliubov coefficients for processes induced by an accelerated point mirror in 1 + 1 dimensional space and the current (charge) densities for the processes caused by an accelerated point charge in 3 + 1 dimensional space. The spectra of pairs of Bose (Fermi) massless quanta emitted by the mirror coincide with the spectra of photons (scalar quanta) emitted by the electric (scalar) charge up to the factor e ²/ħc. The integral relation between the propagator of a pair of oppositely directed massless particles in 1 + 1 dimensional space and the propagator of a single particle in 3 + 1 dimensional space leads to the equality of the vacuum-vacuum amplitudes for the charge and the mirror if the mean number of created particles is small and the charge e = √ħc. Due to the symmetry, the mass shifts of electric and scalar charges (the sources of Bose fields with spin 1 and 0 in 3 + 1 dimensional space) for the trajectories with a subluminal relative velocity β₁₂ of the ends and the maximum proper acceleration w ₀ are expressed in terms of the heat capacity (or energy) spectral densities of Bose and Fermi gases of massless particles with the temperature w ₀/2π in 1 + 1 dimensional space. Thus, the acceleration excites 1-dimensional oscillation in the proper field of a charge, and the energy of oscillation is partly deexcited in the form of real quanta and partly remains in the field. As a result, the mass shift of an accelerated electric charge is nonzero and negative, while that of a scalar charge is zero. The symmetry is extended to the mirror and charge interactions with the fields carrying spacelike momenta and defining the Bogoliubov coefficients α^B,F. The traces trα^B,F, which describe the vector and scalar interactions of the accelerated mirror with a uniformly moving detector, were found in analytic form for two mirror trajectories with subluminal velocities of the ends. The symmetry predicts one and the same value e ₀ = √ħc for the electric and scalar charges in 3 + 1 dimensional space. Arguments are adduced in favor of the conclusion that this value and the corresponding value α₀ = 1/4π of the fine structure constant are the bare, nonrenormalized values. The text was submitted by the author in English.     

有机薄膜晶体管中接触效应的研究

研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以M_OO₃修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μ_ef达到0.42 cm²/V ·s,阈值电压V_T为-9.16 V,开关比4.7×10³.通过中间探针法,对器件电势分布做了定性判断 关键词： 有机薄膜晶体管 场效应迁移率 接触效应 电荷漂移     

Comment on “On the mechanism of liquid metal electron and ion sources”

The electric field near the anode of an electrohydrodynamic ion source is analytically discussed. For the field at the anode apex a rigorous analytical treatment results in the simple expressionE ₀ ≅V _AC/(P₀R₀)^1/2 differing by a factor of 1/2/32 from that by Gomer. Here,V _AC is the applied potential to the cathode with regard to the anode,R ₀ the cathode distance from the anode center, andP ₀ the radius of curvature at the apex of the anode surface. The analytical forms for the radius of curvature and the electric field direction as well as the electric field itself at arbitrary points on the anode are derived.     

Influence of experimental conditions on the electric field effect in the ceramic (BiPb)2Sr2Ca2Cu3Ox

An experimental study is reported of the influence of temperature (T), electric field polarity (±E), as well as of changes in the electrode/insulator/superconductor (E/I/S) measuring system on the field effect in the ceramic (BiPb)₂Sr₂Ca₂Cu₃O_x. It has been established that at 77 K and for E⩾60 MV/m the critical current I _c and conductivity of the sample increase for I>I _c, irrespective of the field polarity. For lower fields and a negative electrode potential the conductivity in an electric field may decrease. The field effect decreases with increasing temperature, to practically vanish near T _c where the sample is still in superconducting state. Experiments carried out with more complex systems E/I/M/I/S and E/I/M/S (M stands for a metallic foil) support the conclusion that it is the external electric field that is responsible for the observed effects. Fiz. Tverd. Tela (St. Petersburg) 39, 1967–1970 (December 1997)     

Low voltage operating OFETs based on solution-processed metal phthalocyanines

The class of sodium salts of sulphonated metal phthalocyanines (MePCS _x , S = SO₃Na, x=1–4) was investigated as a p-type channel component in organic field-effect transistors (OFETs). The solubility of these materials appears to be enhanced compared to their non-sulphonated counterparts (MePCs). We fabricated transistors based on MePCS _x varying the central metal atom (Me = Ni, Co, Zn, Al) and we evaluated the dependence of transistor performance on the nature of the central atom and the degree of sulphonation. The best results were obtained in the case of Ni and low sulphur content. In this case the mobility value is μ=1.08 cm² V⁻¹ s⁻¹ and the on/off current ratio ∼10³. The degree of sulphonation affects the electric field inside the active film in a way analogous to the case of polyelectrolyte-gated OFETs. The Na⁺ counter ions present in the channel contribute to the device characteristics but their concentration should be controlled in order to optimize device performance.