The nature of the predominant acceptors in high quality zinc telluride

We report very sharp bound exciton luminescence spectra in high quality melt-grown very lightly compensated ZnTe, p-type with N_A-N_D in the low 10⁺¹⁵ cm^-3. Bound exciton localisation energies at seven shallow neutral acceptors with E_A between ~55 and ~150 meV are very insensitive to E_A. Optical absorption and dye laser luminescence excitation spectroscopy were necessary to obtain a full separation of the transitions due to different acceptors, together with a study of certain ‘two-hole’ luminescence satellites in which the acceptor is left in a series of orbital states after bound exciton decay. Two shallow acceptors are P_Te and As_Te, a third possibly Li_Zn while a fourth, relatively prominent in our best undoped crystals, may be a complex. A deeper, 150 meV acceptor, frequently reported in the ZnTe literature and electrically dominant in most of our undoped crystals has the Zeeman character of a point defect. We present clear evidence from our spectra that this energy does not represent the binding of a single hole at a doubly ionized cation vacancy, a popular attribution since 1963. This acceptor may be covered by another impurity, possibly Cu_Zn. We also report bound phonon effects, lifetime broadening of excited bound exciton states and observe a single unidentified donor with E_D ~18.5 meV. This energy is determined using selective dye laser excitation at the weak neutral donor bound exciton line and from the onset of valence band to ionized donor photo-absorption.     

Photoluminescent studies of the condensed phase in phosphorus-doped silicon

Photoluminescent studies give evidence for the existence of the electron—hole droplet in phosphorus-doped silicon in the impurity concentration range 9.0 × 10¹⁵cm^?3 ? N_D ? 4.3 × 10¹⁹cm^?3.     

Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (～2.5 × 10¹⁸ cm^?3) and to the overlap of the impurity band with the conduction band (～2 × 10¹⁹ cm^?3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.     

Analysis of the 2ν3 band of 12CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10^?3 cm^?1. The value of the parameter (α^B ? α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm^?1, B″ = 0.68216(9) cm^?1, D″_J = 1.10(30) × 10^?6 cm^?1, α^B = (B″ ? B′) = 3.086(7) × 10^?3 cm^?1, and β^J = (D″_J ? D′_J) = ?3.24(11) × 10^?7 cm^?1. A value of α^A = (A″ ? A′) = 2.90(5) × 10^?3 cm^?1 has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

Vibration-rotation spectra of ethane and deuteroethanes: The ν2 band of CH3CD3

The ν₂ band of CH₃CD₃ has been measured under an effective resolution of 0.04 cm^?1. About 400 transitions observed in the region from 2130 to 2060 cm^?1 have been identified as due to the ν₂ fundamental band. The least-squares analysis of these transitions yields the band constants: ν₀ = 2089.957, B′ = 0.548937, D_J′ = 6.97 × 10^?7, D_JK′ = 1.92 × 10^?6, A′ - A″ = ?0.01158, and D_K′ - D_K″ = 1.30 × 10^?6 cm^?1. The ground-state constants B″, D_J″, and D_JK″ are fixed to the values obtained from microwave spectroscopy.     

Fundamental reflection spectrum and the electronic band structure of chlorine-doped CdTe

The effect of chlorine impurity on the fundamental reflection spectrum and the electronic band structure of cadmium telluride crystals has been studied. At the impurity concentration N _Cl>5.0×10¹⁹ cm^?3, a peak appears in the reflectance spectra. This peak is due to electron transitions at the X point of the Brillouin zone from the upper split valence band to Cl levels lying 0.05 eV above the Γ minimum of the conduction band. The other features in the reflectance spectra and band structure are explained as being due to the effect of spin-orbit splitting at the X point and to indirect electronic transitions from the Cl levels to the Γ minimum.     

Tunable laser study of the ν10 + ν11 band of cyclopropane

Diode laser measurements of the ν₁₀ + ν₁₁ (l_tot = ±2) perpendicular band of cyclopropane have led to the assignments of roughly 600 lines in the 1880–1920-cm^?1 region. Most of the spectra were recorded and stored in digital form using a rapid-scan mode of operating the laser. These spectra were calibrated, with the aid of a computer, by reference to the R lines of the ν₁ + ν₂ band of N₂O. The ground state constants we obtained are (in cm^?1) B = 0.670240 ± 2.4 × 10^?5, D_J = (1.090 ± 0.054) × 10^?6, D_JK = (?1.29 ± 0.19) × 10^?6, D_K = (0.2 ± 1.1) × 10^?6. The excited state levels are perturbed at large J values, presumably by Coriolis couplings between the active E′(l_tot = ±2) and the inactive A′(l_tot = 0) states. Effective values for the excited state constants were obtained by considering only the J < 15 levels. The A₁-A₂ splittings in the K′ = 1 excited states were observed to vary as q_effJ(J + 1), with q_eff = (2.17 ± 0.17) × 10^?4 cm^?1.     

Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs

The amphoteric behavior of Sn, a commonly-used dopant in AsCl₃GaH₂ vapor epitaxy, is examined for Sn concentration from 5 × 10¹⁴ to 5 × 10¹⁷cm^?3. The compensation ratio $\text{(}\text{N}{}_{\mathrm{A}}\text{N}{}_{\mathrm{D}}\text{)}$ remains constant at 0.23 for low concentrations and begins to increase in the 10¹⁶cm^?3 range. This behavior can be explained quantitatively with non-equilibrium impurity incorporation model which takes into account 3 × 10¹¹ cm^?2 surface states.     

Absorption spectra of C6H6 and C6D6 near 340 nm

The absorption spectra of C₆H₆ and C₆D₆ in the liquid phase have been studied near 340 nm. The absorption spectrophotometric mounting was a sequential double-beam attachment with linear response to energy on scanning of the spectrum before the exit slit and an electronic device which gives directly either the absorbance or the integrated absorbance of a transition and, consequently, its oscillator strength.The oscillator strength measured for the band of C₆H₆ is 8×10^?8, which corresponds to a dipole moment of 2.4×10^?3 Debye; this value is of the same order as a theoretical value calculated by Tsubomura and Mulliken (3.8×10^?3 Debye) for a transition between states ³F and ³A of an oxygen-benzene pair. This agreement corroborates the hypothetical existence of such a transition.The first vibrational band is at 28553 cm^?1 for C₆H₆; this band is not observed in the vapor or solid phase. It corresponds probably to the transition 0-0, which is considered in the literature to be near 29500 cm^?1. The isotopic shift measured for this first band is 164 cm^?1. The vibrational frequencies are, respectively, 910 cm^?1 for C₆H₆ and 889 cm^?1 for C₆D₆.     

Polarizabilities of shallow donors in silicon

Capacitance measurements on N-type As, P, and Sb-doped Si samples have been made between 4.2 and 1.35°K, from 0.3 to 100 kHz as a function of (N_D ? N_A) [high purity to 2.7 × 10¹⁸/cm³]. From the dielectric constant variation with (N_D ? N_A) donor polarizabilities α_AS, α_P, and α_Sb are found respectively to be $\text{1.0±0.1, 2.4±0.4,}\text{and}\text{3.1±0.3 × 10}{}^5\text{A}\text{?}{}^3$.     

Gain studies on a uranine-damc dye mixture laser under nitrogen laser pumping

The radiative and Forster type of energy transfer processes in a dye mixture laser of 7-diethylamino-4-methyl coumarin (donor) and fluorescein disodium salt (acceptor) under nitrogen laser pumping were investigated. The Forster transfer rate calculated from the absorption and emission spectra of acceptor and donor is 1.3 × 10¹¹ liter mole^?1sec^?1. The gain of acceptor at 550 nm was measured for acceptor concentrations N_A from 10^?3M to 3 × 10^?3M for a fixed ratio F = 1 of donor to acceptor concentrations at different pump powers. The results agreed with the rate equation model proposed for the dye mixture laser. The radiative rate constant calculated from these results is 3.1 × 10¹⁰ liter mole^?1sec^?1. Numerical simulation of the rate equations showed that the acceptor reaches peak emission with a time lag of 3 ns with respect to the donor peak emission for F = 0.998, N_A = 10^?5M. This time lag decreases with increasing N_A and becomes zero for N_A = 10^?1M, F = 0.048.     

Intervalley transfers of hot electrons in silicon below 77 K

Intervalley rate transfer along 〈100〉 directions is deduced from conductivity measurements versus electric field for different impurity concentrations N_D-N_A at lattice temperatures T ? 77 K. The maximum rate transfer plotted versus T reaches 1 at T < 25 K and does not depend on N_D-N_D for N_D-N_A ? 2 × 10¹⁴crmcm^?3.     

Analysis of the ν6(A″2) band of cyclopropane-d6 recorded under high resolution

The parallel band ν₆(A″₂) of C₃D₆ near 2336 cm^?1 has been studied with high resolution (Δν = 0.020 – 0.024 cm^?1) in the infrared. The band has been analyzed using standard techniques and the following parameters have been determined: B″ = 0.461388(20) cm^?1, D″_J = 3.83(17) × 10^?7 cm^?1, ν₀ = 2336.764(2) cm^?1, α^B = (B″ ? B′) = 8.823(12) × 10^?4 cm^?1, β^J = (D″_J ? D′_J) = 0, and α^C = (C″ ? C′) = 4.5(5) × 10^?4 cm^?1.     

A high-resolution study of the 14.4-μm infrared band of deuterofluoroform

The FT-IR spectrum of the ν₃ parallel band of deuterofluoroform has been recorded at a resolution of 0.0045 cm^?1. Nine independent spectral parameters were determined which reproduce some 650 observed wavenumbers with a standard error of 3 × 10^?4 cm^?1. The constants derived for the ν₃ band are (in cm^?1): ν₀ = 694.2822(3); B₀ = 0.3309321(9); B₃ = 0.3302464(11); α^B = 6.859(10) × 10^?4; α^C = 1.429 × 10^?4; D₃^J = 3.168(3) × 10^?7; D₀^J = 3.188(3) × 10^?7; D_JK³ = 4.766 × 10^?7; D_JK⁰ = 4.864 × 10^?7; and D_K⁰ ? D_K³ = 2 × 10^?10.     

Cyclotron resonance of hot electrons and nonlinear transport phenomena in n-type indium antimonide

Impurity states and nonlinear transport phenomena in n-type indium antimonide under strong magnetic fields have been extensively studied at liquid helium temperatures through H₂O laser cyclotron resonance combined with d.c. measurements. A new type cyclotron resonance with modulation by pulsed electric field, or PEM-CR, has been utilized throughout. Origin of several weak transitions so far indefinite has been identified. Existence of the donor binding state in a magnetic field as low as 2·85 kOe for the excess donor concentration N_D ? N_A = 2 × 10¹³ cm^?3 is experimentally confirmed. Joint determination of resistivity and carrier distribution in the energy space has yielded a fair success in separating the mechanisms for the nonlinear transport behavior.     

Optical spectra of (CdF2)0.9(InF3)0.1 semiconductor solid solutions

The differences in the optical spectra of CdF₂:In semiconductors with bistable DX centers (concentrated (CdF₂)_0.9(InF₃)_0.1 solid solutions) and “standard” samples with a lower impurity concentration used to record holograms are discussed. In contrast to the standard samples, in which complete decay of two-electron DX states and transfer of electrons to shallow donor levels may occur at low temperatures, long-term irradiation of a (CdF₂)_0.9(InF₃)_0.1 solid solution by UV or visible light leads to decay of no more than 20% deep centers. The experimental data and estimates of the statistical distribution of electrons over energy levels in this crystal give the total electron concentration, neutral donor concentration, and concentration of deep two-electron centers to be ～5 × 10¹⁸ cm^?3, ～9 × 10¹⁷ cm^?3, and more than 1 × 10²⁰ cm^?3, respectively. These estimates show that the majority of impurity ions are located in clusters and can form only deep two-electron states in CdF₂ crystals with a high indium content. In this case, In³⁺ ions in a limited concentration (In³⁺ (～9 × 10¹⁷ cm^?3) are statistically distributed in the “unperturbed” CdF₂ lattice and, as in low-concentrated samples, form DX centers, which possess both shallow hydrogen-like and deep two-electron states.     

Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

The paper reports on the barrier mid-wave infrared InAs/InAsSb (x_Sb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, x_Sb = 0.97; barrier doping, N_D < 2×10¹⁶ cm^?3 leading to valence band offset below 100 meV in relation to the active layer doping, N_D = 5×10¹⁵ cm^?3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ～ 10¹¹ Jones at T ～ 100 K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τ_s = 420 ps (T ～ 77 K) was presented with a reduced active layer of d = 1 μm.     

Effects of the overlap between wave functions of impurity centers on the activation energy of hopping conduction

The hopping conductivity σ₃ has been studied in samples of slightly counterdoped crystalline Si: B with a boron concentration of 2×10¹⁶ cm^?3<N<10¹⁷ cm^?3 and a compensation of 10^?4≤K≤10^?2. It is found that at K≤10^?3 the activation energy ε₃ is not lower (as it must be according to classical notions at finite K) but larger than the value ε_N=e ² N ^1/3/κ, where e is the electronic charge and κ is the dielectric constant. With decreasing N, the energy ε₃ drops slower and, with decreasing K, grows faster than follows from the standard theory. At K≤10^?4, ε₃ is higher than ε _N by a factor of 1.5–2. The result is explained by the effect of the overlap between wave functions of neighboring impurity centers on the structure of the impurity band.     

Many-body effects in the first excited subband of the n-inversion layer of Si

We have calculated the self-energies of electrons in the lowest and first excited sub-bands of Si inversion layers. The self-consistent wavefunctions calculated in the Hartree approximation were used, and dynamic screening was approximated by the Lundqvist-Overhauser model. The correlation energy of an electron in the excited band is quite large: about ?10 meV at an inversion layer density of 10¹¹ cm^?2 to about ?16 meV at 3 × 10¹² cm^?2. The calculated separation between subbands is in very good agreement with available experimental measurements. An exciton is predicted with a binding energy of 0.9 meV at N_inv = 10¹² cm^?2 calculated in the static approximation.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.