飞秒被动锁模环形腔掺Er3＋光纤激光器

在考虑增益、损耗、群速度色散、自相位调制、快速可饱和吸收体等各种参数同时作用情况下，分析了非线性偏振旋转效应自启动锁模机理，研究了腔体参数与锁模脉冲之间的关系，并给出飞秒被动锁模环形腔掺Er3＋光纤激光器实验原理。实验采用性能稳定的980nm半导体激光器作为抽运源，高掺杂短长度掺Er3＋光纤作为增益介质，利用非线性偏振旋转锁模技术，得到了稳定的飞秒自起振锁模光脉冲。抽运功率为23mW时，激光器输出锁模脉冲中心波长1552nm，3dB带宽为7.6nm，重复频率14.0MHz，平均输出功率0.43mW，自起振锁模泵浦阈值功率11.5mW,并观测到了稳定的高阶锁模脉冲输出。该激光器与报道过的相同结构光纤激光器相比,自起振泵浦阈值低、脉冲能量高、稳定性好，且频谱边带幅度小。     

快速与慢速饱和吸收体被动锁模掺铒光纤激光器的理论分析

利用半导体饱和吸收波导作为慢速饱和吸收体与非线性快速饱和吸收体相结合，建立了共同被动锁模掺铒光纤激光器的理论模型-分析了半导体饱和吸收波导、光纤自相位调制和自振幅调制对锁模脉冲宽度和脉冲啁啾的影响- 关键词：     

全光纤高功率被动锁模掺铥光纤激光器

利用非线性光环形镜(NOLM)的可饱和吸收特性实现了可自启动的2μm全光纤高能量被动锁模掺铥光纤激光器。当泵浦功率大于3W时,激光器工作在连续或不稳定脉冲运转状态;泵浦功率达到4.69W后,输出为自启动锁模脉冲,重复频率4.26MHz,中心波长2 061.5nm,光谱半极大宽度18.1nm,平均输出功率8.8mW;继续增加泵浦功率到最大值7.56W,可以得到中心波长2 062.2nm、光谱半极大宽度17.1nm、斜率效率为6.2%、脉冲宽度和能量分别为424fs和65.6nJ的稳定锁模脉冲。这是目前已报道的在未经放大情况下脉冲能量最高的2μm锁模脉冲光纤激光器。     

双包层掺镱光纤激光器连续和调Q运转的实验研究

采用布拉格光纤光栅作为谐振腔,实现了980 nm半导体激光器端面泵浦下的双包层掺镱光纤激光器的连续和调Q运转.连续激光实验结果表明,在泵浦功率固定时,增益光纤存在激光输出功率最大情况下的最佳长度,当泵浦功率增大时,最佳增益光纤长度也随之增加.采用石墨烯分散液作为可饱和吸收体,插入增益光纤与布拉格光纤光栅之间,实现了光纤激光器的稳定被动调Q运转.当泵浦功率为2.87W时,得到了最小脉冲宽度33 ns、重复率38.5 kHz的脉冲序列;随着泵浦功率进一步增大,出现不稳定的调Q锁模现象.     

基于单壁碳纳米管的双向锁模掺铒光纤激光器

设计了一种没有隔离器的单壁碳纳米管双向被动锁模光纤孤子激光器.该光纤激光器由波分复用器、掺铒光纤、光耦合器、碳纳米管、单模光纤和偏振控制器组成.在环形腔的两个相反方向上,同时实现基于碳纳米管饱和吸收体的被动锁模,得到两个反向稳定脉冲序列.调节激光腔中的偏振控制器以及泵浦激光源,分析该实验装置在不同泵浦功率下的输出特性.结果表明,中心波长变化范围为1 558~1 560nm,顺时针脉冲宽度变化范围为854~959ps,逆时针脉冲宽度变化范围为247~624ps.此外,泵浦功率较大时,逆时针方向上脉冲序列分裂.     

宽光谱全正色散锁模掺镱光纤激光器

介绍了一种全正色散宽光谱被动锁模掺镱光纤激光器,利用非线性偏振旋转技术实现全正色散掺镱光纤激光器的被动锁模.当泵浦功率输出为500mW时,激光脉冲输出功率大于139mW,重复频率约为28.1MHz,脉冲宽度为3.8ps.为了进一步研究全正色散光纤激光器的宽光谱输出特性,在腔内熔接50m单模光纤,同时去除双折射滤波片,在泵浦功率为500mW时,观察到稳定锁模单脉冲耗散孤子,光谱范围为1 005~1 140nm,输出激光脉冲最大平均功率为90mW,重复频率为3.58MHz,脉冲宽度为519ps.     

有理数谐波主被动锁模掺铒光纤激光器

在理论上详细分析了利用非线性光学环形镜（NOLM）来减小输出脉冲幅度波动,消除噪声并对脉冲进行压缩整形的物理机制。在主动锁模掺铒光纤环形激光器中（AHML－EDFL）接入一个非线性光学环形镜,形成结构新颖的主被动锁模掺铒光纤激光器（APHML－EDFL）,利用非线性光学环形镜所具有的饱和吸收体功能,成功地制抑了4阶有理数谐波锁模（RHML）中较大的幅度噪声,在1GHz量级的调制频率下,由主被动锁模掺铒光纤激光器获产生重复频率为5．1GHz,幅度相当稳定的4阶有理数谐波锁模脉冲序列。     

自启动被动锁模掺铒光纤激光器的研究

在非线性光纤环形镜非线性开关效应和块状半导体波导饱和吸收效应的共同作用下，实现了掺铒光纤激光器的自启动被动锁模，获得了十分稳定的锁模脉冲序列，观察到高次谐频锁模脉冲输出。分析了非线性光纤环形镜的非线性开关反射特性。     

基于非线性偏振旋转效应的多波长掺铥锁模光纤激光器

运用非线性偏振旋转效应实现了一种掺铥锁模多波长光纤激光器.采用环形腔结构,以1 565nm半导体光源为泵浦源,3m长掺铥光纤为增益介质.利用非线性偏振旋转效应进行滤波.当泵浦功率在800mW时,通过调节光纤偏振控制器,激光器出现了被动锁模状态的脉冲输出,脉冲重复频率为3.178MHz,脉冲宽度为617ps.进一步增加泵浦功率,激光器进入多波长输出的工作状态.调节偏振控制器在室温下得到1~5个稳定的波长激光输出,边摸抑制比为40~60dB.     

慢饱和吸收效应对锁模光纤激光器中脉冲传输特性的影响

石墨烯作为饱和吸收体用于锁模光纤激光器,为超短脉冲的研制开辟了一条新途径。本文以耦合非线性薛定谔方程为理论模型,对锁模光纤激光器中超短脉冲产生及传输做了详细的研究,特别是饱和吸收体在脉冲产生及传输过程中对脉冲振幅及中心位置的影响。相关结论将为进一步改善光纤激光器的性能提供一定的理论参考。     

Fabrication of aligned single wall carbon nanotube absorbers for high power passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and 790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO₄ laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking.     

Fabrication and characterization of double-wall carbon nanotube absorber for passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the double-wall carbon nanotubes (DWCNT) onto a hydrophilic quartz substrate. The fast recovery time and the saturation intensity of the absorber were measured to be 228 fs and 130 μJ/cm², respectively, at 1060 nm. The modulation depth of the absorber was about 3.7%. Passive mode-locked Nd:GdVO₄ laser was demonstrated. The continuous wave mode-locked pulses pulse duration is 5.6 ps and the largest average output power is 1.2 W at the pump power of 9.5 W. To the best of our knowledge, this is the first demonstration of high power continuous wave mode locking laser with DWCNT absorber.     

Self-starting mode-locked picosecond Ti：sapphire laser by using of a fast SESAM

A stable continuous wave mode-locked picosecond Ti:sapphire laser by using a fast semiconductor saturable absorber mirror (SESAM) is demonstrated. The laser delivers pulse width of 20 ps at a central wavelength of 813 nm and a repetition rate of 100 MHz. The maximum output power is 1.34 W with pump power of 7 W which corresponds to an optical--optical conversion efficiency of 19.1%.     

Generation of pulses shorter than 70 fs with a synchronously-pumped CW dye laser

Pulses shorter than 70 fs are generated with a synchronously-pumped cw dye laser using a dye medium composed of a mixture of rhodamine 6G and a fast recovery saturable absorber, DQOCI. The laser pulses exhibit no satellites. A stable output of 30 mW is obtained for only 300 mW of pump power.     

Stable mode-locking in an Yb:YAG laser with a fast SESAM

Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor sat-urable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.     

High pulse energy mode-locked multicore photonic crystal fiber laser

A high pulse energy passively mode-locked fiber laser operating in the all-normal dispersion regime is demonstrated. The gain material is an Yb-doped multicore photonic crystal fiber with 18 cores in array-type geometry. Robust and self-starting mode locking is achieved using a fast semiconductor saturable absorber mirror. The laser generates 180?nJ chirped pulses at a 14.48?MHz repetition rate for an average power of 2.6?W. The 1.15?ps output pulses are compressed to 690?fs outside the cavity.     

Intracavity spectroscopy with modulated multimode lasers

The output of a cw multimode dye laser with an intracavity narrow-band absorber and its pump power modulated shows spectral condensation on both wings of the absorption line. This indicates phase locking of two groups of laser modes. The dispersion of the absorber modifies the mode spacing of the laser such that mode groups on both sides of the absorption line get into resonance with the modulation. These mode groups feel smaller loss and acquire the total laser power. Spectra of the laser output reveal the total absorption coefficient, the homogeneous broadening of the absorber, and the spectral width of individual laser modes.On leave from Lebedev Physical Institute, Academy of Sciences of the USSR, SU-117924 Moscow, USSR     

Yb-doped passively mode-locked fiber laser with Bi_2Te_3-deposited

In this study we present an all-normal-dispersion Yb-doped fiber laser passively mode-locked with topological insulator(Bi2Te3) saturable absorber. The saturable absorber device is fabricated by depositing Bi2Te3 on a tapered fiber through using pulsed laser deposition(PLD) technology, which can give rise to less non-saturable losses than most of the solution processing methods. Owing to the long interaction length, Bi2Te3 is not exposed to high optical power, which allows the saturable absorber device to work in a high power regime. The modulation depth of this kind of saturable absorber is measured to be 10%. By combining the saturable absorber device with Yb-doped fiber laser, a mode-locked pulse operating at a repetition rate of 19.8 MHz is achieved. The 3-d B spectral width and pulse duration are measured to be 1.245 nm and317 ps, respectively.     

Optimization of GaAs semiconductor saturable absorber Q-switched lasers

The expressions of pulse characteristics such as output energy, peak power, and pulse width are obtained by solving the coupled rate equations describing the operation of GaAs semiconductor saturable absorber Q-switched lasers. The key parameters of an optimally coupled GaAs saturable absorber Q-switched laser are determined and several design curves are generated from these expressions for the first time. These key parameters include the optimal normalized coupling parameters and the optimal normalized saturable absorber parameters that maximize the output energy or maximize the peak power, and the corresponding normalized energy, normalized peak power, and normalized pulse width. Using the expressions and design curves, one can predict the pulse characteristics and perform the design of an optimally coupled GaAs saturable absorber Q-switched laser.     

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.