三平行光子晶体单模波导的耦合特性及其应用

将三光子晶体单模波导的相互耦合看成一个多模干涉系统.本征模的色散曲线相交或近于相交并出现简并模，简并模之间存在强烈耦合并导致模式的分布方式发生转变.多模干涉系统中，不同波长的光波能量在传输过程中由于相干而具有不同的空间输出行为，在近简并点处多模之间的相干解除，能流限制在原输入方向，不发生转移.三光子晶体单模光波导的这种特性可用来制作波分复用或解复用器件. 关键词： 光子晶体波导 简并模 多模干涉 波分复用或解复用     

二维平板光子晶体直波导的制备和光传输特性的测量

利用聚焦离子束刻蚀的方法在SOI(silicon on insulator)基片上制备了W3型二维光子晶体直波导.观察并测量了近红外激光通过光子晶体波导的散射图形和透过谱.实验结果说明，激光在有引入引出脊形波导的光子晶体直波导中具有很好的传输特性. 关键词： 光子晶体波导 光子带隙 脊型波导     

二维光子晶体波导与单模平面介质波导间的喇叭波导接头

提出并优化了用于二维介质柱光子晶体波导与单模平面介质波导对接的基于分布布拉格反射波导的喇叭波导接头，提高了这两种波导之间的传输效率.二维时域有限差分仿真结果表明，在大部分光子晶体波导导模的频谱范围内，传输效率高于98％.传输效率最高可以达到99.85％. 关键词： 光子晶体波导 平面介质波导 时域有限差分     

光子晶体波导定向耦合器

在完整二维光子晶体中引入线缺陷后，就形成了光子晶体波导；将时域有限差分方法(FDTD)用于光子晶体波导耦合研究，计算了不同耦合长度情形下的波导各个出口处的透过率，结果表明：光子晶体波导耦合遵循普通介质波导耦合的一般规律，也有定向耦合的功能。进一步的研究表明：对于不同的频率，光子晶体定向耦合器耦合系数是不同的，并且耦合系数和对应的频率之间近似直线关系。     

基于光子晶体的双波长太赫兹波功分器研究

太赫兹波技术和光子晶体技术相结合为设计太赫兹波功能器件提供了新的思路和方法.本文提出了一种基于二维光子晶体的双波长太赫兹波功分器.在光子晶体中引入由三个相互平行的单模波导形成的定向耦合型分束器和Y型结构的1×2型分束器,同时,在Y型结构的分支处分别引入两个介质柱.利用平面波展开法和定向耦合原理计算了在不同入射波频率下,耦合波导的耦合长度,并采用时域有限差分法对功分器的传输特性进行了模拟仿真分析.结果表明,在频率f1=1.0THz时,实现了端口1和端口2的能量均分输出;在频率f2=0.893THz时,通过非对称改变两个介质柱的折射率,可以实现端口3和端口4输出能量的自由分配.     

基于光子晶体波导定向耦合的光子晶体分/合频器

在完整二维光子晶体中引入线缺陷后,就形成了光子晶体波导。将时域有限差分法(FDTD)和平面波法作为光子晶体理论研究的工具。研究结果表明,光子晶体波导之间的耦合遵循普通介质波导耦合的一般规律,有定向耦合的功能;将两个具有不同耦合长度的光子晶体波导定向耦合器顺序集成在一起,可以组成一个三波长的光子晶体分/合频器。     

光子晶体定向耦合三波长功分器

以二维三角晶格光子晶体为研究对象,在该光子晶体中引入两行以一行耦合介质柱为间距的平行单模线缺陷波导.通过分析和研究光子晶体波导耦合结构的耦合和解耦合特性,发现在不同频率下耦合波导的耦合长度不同.利用平面波展开法和定向耦合原理计算了在不同入射光频率下,缺陷波导间耦合波导的耦合长度,设计了一种新型超微光子晶体波导耦合型三波长功分器,实现了归一化频率分别为0.369、0.394、0.435的光波的分束效果.采用时域有限差分法验证了该功分器具有很好的功率分配效果.本文结果有助于光子晶体新型滤波器、定向耦合器、波分复用器、偏振光分束器以及光开关等光子器件的研究.     

干涉原理在光子晶体中的应用

从理论和实验上分析了光子晶体环形腔的能量传输.在光子晶体中引入环形结构，以干涉原理为基础，改变其中的内部参数使之满足一定的条件，从而实现了频率的选择传输.用多重散射的方法计算了这种结构的透过谱，并与实验测得的透过谱进行了比较，两者相符较好. 关键词： 干涉原理 光子晶体 环形腔     

基于混合导光型光子晶体光纤的波分解复用器研究

设计了一种基于混合导光型光子晶体光纤的波分解复用器,该波分解复用器同时具有折射率导光型光子晶体光纤和带隙导光型光子晶体光纤的特点,可用于稀疏型波分复用系统中.设计的稀疏型波分解复用器由一段三芯光子晶体光纤组成,通过填充不同折射率的材料.形成了混合导光型光子晶体光纤.根据耦合模原理,在临近的波导中,当传播常数相等时,模式之间发生强烈耦合.能量在波导之间交替.由于填充的材料折射率不同,使得光功率在两个小同的波长上发生耦合,构成了两个不同响应波长的光滤波器.通过选择合适的光纤长度,使得在光纤的输出端,不同波长的光从不同的波导输出,实现波分解复用的功能.采用全矢量有限元法分析了光纤传输特性,计算了不同波长光的耦合长度.采用光束传播法仿真发现,长度为4.3 mm的光纤能实现波长为1.31μm和1.55μm光的解复用.     

飞秒激光刻写铌酸锂光波导的实验研究

研究了飞秒激光加工参量对刻写质量的影响,分析了激光能量吸收的多光子效应,测试了刻写通道的传输特性.实验结果表明,激光刻写的通道具有良好的波导特性：当激光脉冲能量在20 μJ左右,扫描速度在300 μm/s～400 μm/s之间时,刻写通道的传输损耗小于1 dB/cm,低于晶体的传输损耗,其原因是激光诱导锂离子的扩散引起了晶体内部局部折射率的增加.     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

InSb的Li嵌入电压轮廓曲线从头计算

InSb是很有应用前途的Li离子电池非碳类负极材料. 使用基于密 度泛函理论的第一原理赝势法，计算了InSb 在Li嵌入时的125种不同情况下的总能、形成能 以及平衡体积等，进而参考电压轮廓实验曲线，筛选出了若干条理论上可能的反应路径，得到了Li嵌入时的电压轮廓曲线. 结果表明，从体InSb相到Li＿3Sb相之间没有中间经历五个相及五个相以上的反应路径；中间经历一个相的最可能反应过程为Li+In＿4Sb＿4→Li＿1In＿4Sb＿4,11Li+Li＿1In＿4Sb＿4→Li＿12Sb＿4+4In；中间经 历四个相的仅有一条反应路径：Li+In＿4Sb＿4→Li＿1In＿4Sb＿4,2Li+Li＿1In＿4Sb＿4→ Li＿3In＿4Sb＿4,4Li+Li＿3In＿4Sb＿4→Li＿7In＿3Sb＿4+In,3Li+Li＿7In＿3Sb＿4→Li＿10In＿2Sb＿4+In,2Li+Li＿10In＿2Sb＿4→Li＿12Sb＿4+2In. 关键词： InSb Li嵌入 电压轮廓曲线 从头计算     

Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation

The structural and the size evolution of embedded In nanoparticles in Al synthesized by ion implantation and subsequent annealing are experimentally investigated. The average radius r of In nanoparticles is determined as a function of annealing time in a temperature range between 423 K and 453 K. The structural transition of In nanoparticles with the crystallographic orientation In(200)[002] Al(200)[002] is observed to change into In(111)[110] Al(002)[110] with a critical particle radius between 2.3 nm and 2.6 nm. In addition, the growth of In nanoparticles in the annealing process is evidently governed by the diffusion limited Ostwald ripening. By further analyzing the experimental data, values of diffusion coefficient and activation energy are obtained.     

In掺杂h-LuFeO3光吸收及极化性能的第一性原理计算

h-LuFeO3是一种窄带隙铁电半导体材料,已被证明在铁电光伏领域有较好的应用前景.然而,较低的极化强度使光生电子-空穴对复合率大,限制了h-LuFeO3基铁电光伏电池效率的提高.为改善h-LuFeO3的极化强度,提高光吸收性质,本文利用第一性原理计算方法研究了In原子在h-LuFeO3不同位置的掺杂形成能,得到最稳定的掺杂位置,比较了h-Lu1-xInxFeO3(x=0,0.167,0.333,0.667)的带隙、光吸收性能及极化强度等性质.计算结果表明,随着In掺杂比例的增加,h-LuFeO3的晶格常数c/a比不断增大,铁电极化强度得到提高.当In:Lu=2:1时,材料杂质能级出现,Fe-O轨道杂化得到增强,提高了h-LuFeO3的光吸收性能.此工作证明了In掺杂是改善h-LuFeO3极化强度和光吸收系数的有效方法,对铁电光伏性能的提高提供一种新途径.     

Structural analysis of In/Ag, In/Cu and In/Pd thin films on tungsten by ellipsometric, XRD and AES methods

Compositional, microstructural and optical properties of In/Cu, In/Ag and In/Pd thin films evaporated on W substrate in a vacuum were investigated by means of Auger electron spectroscopy, X-ray diffractometry, scanning electron microscopy, and spectroscopic ellipsometry methods. Thicknesses of deposited pure metal layers were adjusted to atomic concentration ratios In:Ag = 1:2, In:Cu = 2:1 and In:Pd = 3:1. Interdiffusion of metals and creation of intermetallic compounds AgIn₂, Ag₂In and CuIn₂were detected at room temperature. Phase transformation and changes in the surface morphology due to annealing of samples at 393 K for 60 min were revealed. Combined investigations indicated a layered structure of In/Ag films. A tendency of island-like structure formation was stronger for In/Cu and In/Pd films. The complex dielectric functions of In/Ag, In/Cu and In/Pd composite layers were determined from spectroellipsometric data.     

Structural properties of the donor indium in nanocrystalline ZnO

The structural properties of the nanocrystalline semiconductor ZnO (nano-ZnO) doped with the donor Indium were investigated by perturbed γγ angular correlation spectroscopy (PAC) and extended X-ray absorption fine structure measurements (EXAFS). Up to an average concentration of one In atom per nanocrystallite, PAC measurements show that about 12% of the ¹¹¹In atoms are incorporated on substitutional Zn sites. At higher In concentrations, new In defect complexes are visible in the PAC spectra, which dominate the spectra if the average In concentration exceeds one In atoms per nanocrystallite. In addition, the local environment of Zn and In atoms in In doped nano-ZnO was investigated by EXAFS. The measurements at the K edge of Zn show that the crystal structure of nano-ZnO corresponds to bulk ZnO. In heavily In doped nano-ZnO the EXAFS experiments at the K edge of In exhibit an expansion of the first O shell about the In site. Since about four O atoms are detected in this first shell a substitutional incorporation of the In atoms in the ZnO lattice is suggested. The second shell to be occupied by Zn atoms as well as higher shells are almost invisible, which might have the same microscopic origin as the occurrence of defect complexes observed by PAC.     

铟磷共掺杂p型氧化锌薄膜形成机理和性质

利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO ∶ In,P),所用靶材为掺杂五氧化二磷(P₂O₅)和氧化铟(In₂O₃)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O₂的混合气体。原生ZnO薄膜是绝缘的, 600 ℃退火5 min后导电类型为n型,而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm, 1.6×10¹⁷ cm^-3 和3.29 cm²·V^-1·s^-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且P_Zn与2个锌空位(V_Zn)形成P_Zn-2V_Zn复合受主,薄膜表现为p型。     

Growth of single-domain monatomic In chain arrays on the vicinal Si(0 0 1) surface

Using the annealed vicinal Si(0 0 1) surface with 4° miscut toward the [1 1 0] direction as a substrate, single-domain monatomic In chain arrays have been fabricated. High-resolution STM images reveal that deposited In atoms preferentially form In dimers between two neighboring Si dimer rows along the step edges on the lower terrace. Formation of In dimers removes the surface dangling bonds and saturates the In valency. With increasing coverage, the In dimers develop into straight monatomic In chains along the step running direction. It is found that the ordered narrow terrace and rebonded double-layer (D_B) step edge are the keys for the formation of monatomic In chains.     

Metastable phases in Gallium-Indium eutectic alloy particles and their size dependence

In this paper, submicrometer-sized Ga-In eutectic alloy particles were dispersed into polymethylmethacrylate (PMMA) matrix by ultrasonic vibration and sedimentation method. The solidification and melting processes of Ga-In eutectic alloy particles were studied by differential scanning calorimeter (DSC). Four endothermal peaks with the onset temperature located at 16, −11, −22, and −27 °C were observed in DSC heating curves, which corresponded to the melting process of the stable Ga-In phase α-Ga(In) and three metastable phases of β-Ga(In), δ-Ga(In) and γ-Ga(In), respectively. The stable phase α-Ga(In) can only be formed when the size of alloy particle was larger than 0.58 μm. Conversely, metastable phases β-Ga(In), δ-Ga(In) and γ-Ga(In) are mainly formed. The result shows that phase structures in Ga-In eutectic alloy are size dependent.     

Electron spectroscopy studies of surface In-Ag alloy formation on the tungsten surface

XPS and UPS investigations of ultrathin films of In/Ag and Ag/In, deposited onto the W(1 1 0) surface in the ultrahigh vacuum conditions have been performed. Indium and silver films were formed by “in-situ” evaporation on W(1 1 0) substrate. XPS and UPS studies have been performed by means of SCIENTA ESCA200 instrument. The changes of In4d core-level and Ag4d valence band emissions with increasing Ag and In coverage were monitored to observe the energy shift and shape of the spin-orbit doublet of In4d and Ag4d lines in the Ag/In/W and In/Ag/W systems. UPS (HeI and HeII) measurements were supported by XPS AlK_α measurements of In3d and W4p levels, as well as by investigations of Ag3d levels. XPS and UPS data allowed to evaluate the coverage and make conclusions concerning intermixing and surface alloying in the In/Ag/W and Ag/In/W systems. W(1 1 0) substrate can be cleaned after each deposition by thermal desorption and no alloying in the In/W and Ag/W systems is observed.