Entangled photon pairs must often be spatially separated for their subsequent manipulation in integrated quantum circuits. Separation that is both deterministic and universal can in principle be achieved through anti‐coalescent two‐photon quantum interference. However, such interference‐facilitated pair separation (IFPS) has not been extensively studied in the integrated setting, which has important implications on performance. This work provides a detailed review of IFPS and examines how integrated device dependencies such as dispersion impact separation fidelity and interference visibility. The analysis applies equally to both on‐chip and in‐fiber implementations. When coupler dispersion is present, the separation performance can depend on photon bandwidth, spectral entanglement and the dispersion. By design, reduction in the separation fidelity due to loss of non‐classical interference can be perfectly compensated for by classical wavelength demultiplexing effects. This work informs the design of devices for universal photon pair separation of states with tunable arbitrary properties.
The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
Light is usually confined in photonic structures with a band gap or relatively high refractive index for broad scientific and technical applications. Here, a light confinement mechanism is proposed based on the photonic bound state in the continuum (BIC). In a low‐refractive‐index waveguide on a high‐refractive‐index thin membrane, optical dissipation is forbidden because of the destructive interference of various leakage channels. The BIC‐based low‐mode‐area waveguide and high‐Q microresonator can be used to enhance light–matter interaction for laser, nonlinear optical and quantum optical applications. For example, a polymer structure on a diamond membrane shows excellent optical performance that can be achieved with large fabrication tolerance. It can induce strong coupling between photons and the nitrogen–vacancy center in diamond for scalable quantum information processors and networks.
A very promising recent trend in applied quantum physics is to combine the advantageous features of different quantum systems into what is called “hybrid quantum technology”. One of the key elements in this new field will have to be a quantum memory enabling to store quanta over extended periods of time. Systems that may fulfill the demands of such applications are comb‐shaped spin ensembles coupled to a cavity. Due to the decoherence induced by the inhomogeneous ensemble broadening, the storage time of these quantum memories is, however, still rather limited. Here we demonstrate how to overcome this problem by burning well‐placed holes into the spectral spin density leading to spectacular performance in the multimode regime. Specifically, we show how an initial excitation of the ensemble leads to the emission of more than a hundred well‐separated photon pulses with a decay rate significantly below the fundamental limit of the recently proposed “cavity protection effect”.
The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.
Optically levitated nanodiamonds with nitrogen‐vacancy centers promise a high‐quality hybrid spin‐optomechanical system. However, the trapped nanodiamond absorbs energy from laser beams and causes thermal damage in vacuum. It is proposed here to solve the problem by trapping a composite particle (a nanodiamond core coated with a less absorptive silica shell) at the center of strongly focused doughnut‐shaped laser beams. Systematical study on the trapping stability, heat absorption, and oscillation frequency concludes that the azimuthally polarized Gaussian beam and the linearly polarized Laguerre‐Gaussian beam LG03 are the optimal choices. With our proposal, particles with strong absorption coefficients can be trapped without obvious heating and, thus, the spin‐optomechanical system based on levitated nanodiamonds are made possible in high vacuum with the present experimental techniques.
Techniques for coherent multidimensional optical spectroscopy have been developed and utilised to understand many different processes, including energy transfer in photosynthesis and many‐body effects in semiconductor nanostructures. Double‐quantum 2D spectroscopy is one variation that has been particularly useful for understanding many‐body effects. In condensed matter systems, however, there are often many competing signal pathways, which can make it difficult to isolate different contributions and retrieve quantitative information. Here, a means of separating overlapping pathways while maintaining the fidelity of the relevant peak/s is demonstrated. This selective approach is used to isolate the double‐quantum signal from a mixed two exciton state in a semiconductor quantum well. The removal of overlapping peaks allows analysis of the relevant peak‐shape and thus details of interactions with the environment and other carriers to be revealed. An alternative pulse ordering identifies a double‐quantum state associated only with GaAs defects, the signature of which has previously been confused with other interaction induced effects. The experimental approach described here provides access to otherwise hidden details of excitonic interactions and demonstrates that the manner in which the double‐quantum coherence is generated can be important and provide an additional control to help understand the many‐body physics in complex systems.
The broadband enhancement of single‑photon emission from nitrogen‐vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS‐compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1‐xN). It is demonstrated that employing the metamaterial results in significant enhancement of collected single‑photon emission and reduction of the excited‐state lifetime. Our results could have an impact on future CMOS‐compatible integrated quantum sources.
Nanophotonic beamsplitters are fundamental building blocks in integrated optics, with applications ranging from high speed telecom receivers to biological sensors and quantum splitters. While high‐performance multiport beamsplitters have been demonstrated in several material platforms using multimode interference couplers, their operation bandwidth remains fundamentally limited. Here, we leverage the inherent anisotropy and dispersion of a sub‐wavelength structured photonic metamaterial to demonstrate ultra‐broadband integrated beamsplitting. Our device, which is three times more compact than its conventional counterpart, can achieve high‐performance operation over an unprecedented 500 nm design bandwidth exceeding all optical communication bands combined, and making it one of the most broadband silicon photonics components reported to date. Our demonstration paves the way toward nanophotonic waveguide components with ultra‐broadband operation for next generation integrated photonic systems.
We reveal unusually strong polarization sensitivity of electric and magnetic dipole resonances of high‐index dielectric nanoparticles placed on a metallic film. By employing dark‐field spectroscopy, we observe the polarization‐controlled transformation from high‐Q magnetic‐dipole scattering to broadband suppression of scattering associated with the electric dipole mode, and show numerically that it is accompanied by a strong enhancement of the respective fields by the nanoparticle. Our experimental data for silicon nanospheres are in an excellent agreement with both analytical calculations based on Green's function approach and the full‐wave numerical simulations. Our findings further substantiate dielectric nanoparticles as strong candidates for many applications in enhanced sensing, spectroscopy and nonlinear processes at the nanoscale.
In the development of microfluidic chips, conventional 2D processing technologies contribute to the manufacturing of basic microchannel networks. Nevertheless, in the pursuit of versatile microfluidic chips, flexible integration of multifunctional components within a tiny chip is still challenging because a chip containing micro‐channels is a non‐flat substrate. Recently, on‐chip laser processing (OCLP) technology has emerged as an appealing alternative to achieve chip functionalization through in situ fabrication of 3D microstructures. Here, the recent development of OCLP‐enabled multifunctional microfluidic chips, including several accessible photochemical/photophysical schemes, and photosensitive materials permiting OCLP, is reviewed. To demonstrate the capability of OCLP technology, a series of typical micro‐components fabricated using OCLP are introduced. The prospects and current challenges of this field are discussed.
The newly engineered ternary CdZnS/ZnS colloidal quantum dots (CQDs) are found to exhibit remarkably high photoluminescence quantum yield and excellent optical gain properties. However, the underlying mechanisms, which could offer the guidelines for devising CQDs for optimized photonic devices, remain undisclosed. In this work, through comprehensive steady‐state and time‐resolved spectroscopy studies on a series of CdZnS‐based CQDs, we unambiguously clarify that CdZnS‐based CQDs are inherently superior optical gain media in the blue spectral range due to the slow Auger process and that the ultralow threshold stimulated emission is enabled by surface/interface engineering. Furthermore, external cavity‐free high‐Q quasitoroid microlasers were produced from self‐assembly of CdZnS/ZnS CQDs by facile inkjet printing technique. Detailed spectroscopy analysis confirms the whispering gallery mode lasing mechanism of the quasitoroid microlasers. This tempting microlaser fabrication method should be applicable to other solution‐processed gain materials, which could trigger broad research interests.
A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.
High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.
In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W–1 and 70.1 cd A–1, respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.
A novel scheme to multiply the repetition rate of a monolithic self‐mode‐locked laser for generating sub‐terahertz pulse sources is successfully demonstrated. A coated Yb:KGW crystal is designed to achieve a self‐mode‐locked operation at a repetition rate of 24 GHz with an average output power exceeding 1.0 W at a pump power of 4.8 W. A partially reflective mirror is utilized to combine with the output surface of the gain medium to constitute an external Fabry‐Perot cavity. It is theoretically and experimentally verified that adjusting the external cavity length to satisfy the commensurate condition can lead to the frequency spacing to be various order harmonics of the mode spacing of the monolithic cavity. The maximum pulse repetition rate of the laser output can be up to 216 GHz and the pulse duration is as short as 330 fs. More importantly, the overall characteristics of the first‐order temporal autocorrelation traces obtained by sequentially scanning the external cavity.length display an intriguing phenomenon of temporally fractional revivals, similar to the feature of spatial Talbot revivals.
The design of micro‐optical resonator arrays are introduced and tailored towards refractive index sensing applications, building on the previously unexplored benefits of open dielectric stacks. The resonant coupling of identical hollow cavities present strong and narrow spectral resonance bands beyond that available with a single Fabry Perot interferometer. Femtosecond laser irradiation with selective chemical etching is applied to precisely fabricate stacked and waveguide‐coupled open resonators into fused silica, taking advantage of small 12 nm rms surface roughness made available by the self‐alignment of nanograting planes. Refractive index sensing of methanol‐water solutions confirm a very attractive sensing resolution of 6.5 × 10−5 RIU. Such high finesse optical elements open a new realm of optofluidic sensing and integrated optical circuit concepts for detecting minute changes in sample properties against a control solution that may find importance in chemical and biological sensors, telecom sensing networks, biomedical probes, and low‐cost health care products.
