Synthesis and characterization of 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol single crystals

The synthesis of pyrazoles and its derivatives remains of great interest due to their wide applications in pharmaceutical and agrochemical industry. The 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol was synthesized. The 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol single crystals were grown by slow solvent evaporation technique using mixture of chloroform and methanol as a solvent. Yellowish and transparent crystals having maximum dimensions of 0.005 m × 0.004 m × 0.002 m were grown. The crystals were characterized by powder XRD, FT–IR, TG–DTA–DSC and dielectric study. The crystals remained stable up to 160 °C and then start decomposing. The DSC suggested both endothermic and exothermic reactions. One broad exothermic peak was observed at 558.1 °C due to complete decomposition of the sample into the gaseous phase and reaction within the products. Thermodynamic and Kinetic parameters of decomposition were calculated by Coats–Redfern formula. The dielectric study was carried out in the frequency range from 50 Hz to 5 MHz at room temperature. The dielectric constant decreased as the frequency of the applied field increased. The variations of dielectric loss, a.c. conductivity and a.c. resistivity also studied with the frequency of the applied field. Jonscher's power law was verified for a.c. conductivity.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Growth and characterization of sulphamic acid single crystals grown by Sanakaranarayanan‐Ramasamy (SR) method

By directional solidification, single crystal of Sulphamic acid (SA) was successfully grown from aqueous solution by Sankaranarayanan‐Ramasamy (SR) method. A vertically designed L‐bend was used to avoid the effect due to spurious nucleation. A vertical bottom‐seeded ampoule was used for the growth of single crystal. A seed crystal was mounted at the bottom of the ampoule. Sulphamic acid crystals of up to 40 mm in diameter and 60 mm in length have been grown with a growth up to 10 mm per day. The grown sulphamic acid single crystal was characterized using X‐ray powder diffraction analysis, Raman, FTIR, and optical transmission studies. The dielectric behaviour was measured in the frequency range of 1 kHz–10 MHz for the temperature ranges from 30 °C to 170 °C. The sulphamic acid single crystal was also grown by conventional method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature field design,process analysis and control of SAPMAC method for the growth of large size sapphire crystals

In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro‐pulling and shoulder‐expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a‐axis crystallized direction, with 1.0‐5.0mm/h growth velocity and 10‐30K/h temperature decreasing speed, large sapphire single crystal (∅︁240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of semi organic nonlinear optical LHPCL crystals

The growth of single crystals of L‐histidinium perchlorate (LHPCL), a semi organic nonlinear optical material with dimension upto 5 × 6 × 2.5 mm³ is reported. Good optical quality single crystals were grown from aqueous solution by slow solvent evaporation technique. The grown crystals were characterized by single crystal X‐ray diffraction (XRD), FT‐IR and optical transmission studies. Thermal studies confirm that LHPCL has a fairly high thermal stability (272°C) when compared with other members of histidine family. The scanning electron microscopy (SEM) provides information on the quality of the samples and grain distribution over the surface of the sample. The dielectric constant and dielectric loss of the compound were measured at different frequencies, and also at varying temperatures and the results of these experiments are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on conventional and Sankaranarayanan–Ramasamy (SR) method grown ferroelectric glycine phosphite (GPI) single crystals

Transparent single crystals of glycine phosphite were grown by Sankaranarayanan–Ramasamy (SR) method and conventional slow evaporation solution technique (SEST) which had the sizes of 100 mm in length, 30 mm diameter and 10×11×8 mm³. The conventional slow evaporation and Sankaranarayanan–Ramasamy method grown glycine phosphite single crystals were characterized using laser damage threshold, chemical etching, Vickers microhardness, UV–vis–NIR and dielectric analysis. The laser damage threshold value was higher in SR method grown GPI crystal as against conventional method grown crystal. The SR method grown GPI has higher hardness and also higher transmittance compared to conventional method grown crystal. The chemical etching and dielectric loss measurements indicate that the crystal grown by SR method has low density of defects and low value of dielectric loss compared to conventional method grown GPI crystal.     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties

A LaCoO₃ single crystal with 4 mm in diameter and 30 mm in length has been grown by optical floating zone method. The as‐grown crystal is highly crystalline with the rhombohedral perovskite structure (R3c) and grows parallel to the (121) direction. The room temperature resistivity of the as‐grown crystal is 0.12 Ω·cm and the insulator‐metal transition occurs around 500 K. The coercivity and the remanence of the as‐grown crystal are 5 Oe and 6.61×10^–5 μ_B/f.u. at 5 K, respectively. In 1000 Oe under zero‐field cooling, the magnetic susceptibility of the as‐grown crystal shows an upturn in a Curie tail fashion below 35 K, and appears a wave crest over the interval 55 K≤T≤90 K. In addition, a slope change of 1/χ(T) at about 12 K is observed in 50000 Oe under zero‐field cooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Cross‐sectional and surface Raman mapping of thick GaN layers

Raman scattering spectroscopy was utilized for investigation of the structural properties of thick GaN layers. These layers with thickness ∼ 40 μm have been grown by HVPE technique on the sapphire substrates. The investigations have been focused on the strain distribution in GaN layer cross‐section as a function of distance from an interface sapphire/GaN and mapping of the surface and of the inner layer, near the sapphire/GaN interface. From the observed phonon shifts in the Raman spectra strain differences lower than 6.4×10^–4 corresponding to stress differences of 240 MPa were estimated across the thick GaN epitaxial layer. The measurements exhibit that strain in the layer causes changes in the Raman spectra and allow determining the relaxation process in the crystal. The obtained results confirmed, that the mode frequencies in the measured Raman spectra in both directions (parallel or perpendicular to the growth direction) for layer thicknesses over 30 µm are comparable with typical values for bulk material and match the low strain in the structure due to relaxation processes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Radiation resistance of synthetic sapphire crystal irradiated by low‐energy neutron flux

In this paper, high‐quality sapphire crystal grown by an improved Kyropoulos‐like method, was irradiated by low‐energy neutron (i.e. high proportion of thermal neutron) with various flux (low: 7.5×10¹⁵ n/cm², medium: 7.0×10¹⁶ n/cm² and high: 3.8×10¹⁷ n/cm²). The characteristic features of neutron fluence dependence of radiation‐defect formation process, mainly including its change of the structural and optical properties prior to and after irradiation, were investigated by optical absorption (OA), photoluminescence (PL), electron paramagnetic resonance (EPR) and positron annihilation spectroscopy (PAS). It is found that sapphire crystal exhibits high radiation resistance to low‐energy neutron with low fluence. But with the increase of irradiation fluence, it is still sensitive to neutron irradiation mostly in the UV‐visible spectral range, as irradiation‐induced color centers appear, including F‐type and their aggregate centers. Finally, the formation mechanism of the irradiation defects is also discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of semiorganic NLO crystals of LAHClBr

Single crystals of non‐linear optical (NLO) LAHClBr were grown by slow evaporation technique from its aqueous solution. Good optical quality crystals having dimensions up to 12 × 9 × 7 mm³ were obtained. The lattice parameters and morphology for the grown crystals were determined using single crystal XRD. The crystals were characterized by FT‐Raman, optical absorption, thermal (DTA and TGA) and dielectric studies. LAHClBr was found to be thermally stable up to 124.3°C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals with dimensions up to 20 mm × 15 mm × 15 mm have been successfully grown by using the top‐seeded solution growth technique and K₂W₂O₇ as solvent. Experiments show that this crystal is unstable in a strong acid or alkali environment and has a blue fluorescence emission. The density, hardness, melting point, absorption edge, transparency range, prominent Raman shift frequency are 7.57 g/cm³, 238 kg/mm², 800 °C, 380 nm, 400–5450 nm, 868 cm^–1 respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anomalous amorphous SiO2 films

Anomalous SiO₂ films have been prepared by sputtering Si in a mixture of Ar-10% O₂ at 77 K. The same sputtering conditions at room temperature yield normal SiO₂ which means that the anomaly is produced by the low temperature deposition. The anomaly reveals itself in several physical properties. The density of the anomalous SiO₂ is 1.72 as compared with 2.20 for bulk and the dielectric constant is about 50% larger than bulk and with a much stronger temperature dependence. The infrared (ir) spectrum of the anomalous SiO₂ is only slightly different from bulk SiO₂ but esr experiments reveal about 3 × 10¹⁸ spins cm which do not exist in bulk SiO₂. These anomalous films are extremely stable: upon heating only a small amount of oxygen (1 part in 10⁵) evolves at 440°C but the density and IR spectrum remain unchanged up to 1300°C. Annealing at 1500°C completely removes the ESR signal and returns the ir spectrum and the density to that of cristobalite. An electron diffraction and transmission electron microscopy study reveals that the anomalous SiO₂ films consist of essentially bulk like SiO₂ clusters about 250 Å in diameter separated by a low density network. The low density network undoubtedly contains unbound O atoms and the SiSi bonds which give rise to the esr signal. The structural model can account for all the anomalous properties.     

Growth,thermophysical and electrical properties of the nonlinear optical crystal BPO4

Bulk BPO₄ crystals have been successfully grown from high temperature solution of BPO₄, Li₂O, and MoO₃ in the molar ratio of 2.3:1:1.3 by the top‐seeded solution growth (TSSG) method using [101]^c orientation seeds. There are no visible scattering centers and impurity of Mo in the as‐grown BPO₄ crystals, whose optical homogeneity reaches up to 1.6×10^–5/cm. BPO₄ possesses a specific heat of 0.50–1.00 J·g^–1·K^–1 in the temperature range from 298 to 698 K and exhibits strong anisotropic thermal expansion behavior with α_a = 14.2 × 10^–6 K^–1 and α_c = ‐4.0 × 10^–7 K^–1. Moreover, the thermal conductivity coefficients are calculated to be κ_a = 62.4 W·m^–1·K^–1 and κ_c = 51.5 W·m^–1·K^–1, which are remarkably larger than those of some commonly used borates. The measured dielectric constants, ε_a and ε_c, are 4.8 and 6.1, respectively, and the ionic conductivity coefficients, σ_a = 4.3 × 10^–8 S/cm and σ_c = 9.5 × 10^–8 S/cm, are several orders of magnitude lower than that of LiB₃O₅ (LBO). (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Oxygen-conducting crystals of La<Subscript>2</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript>: Growth and main properties

Single crystals of the anionic conductor La₂Mo₂O₉ are grown by crystallization from a nonstoichiometric melt. Their polymorphism and domain structure, as well as the temperature dependences of conductivity and dielectric permittivity, are studied. In the temperature range 750–600°C, the conductivity of these crystals is as high as 10^?1–10^?2 Ω^?1 cm^?1.     

Effect of hydroxyl impurity on temperature coefficient of refractive index of synthetic silica glasses

We have studied the temperature coefficient of the refractive index of synthetic silica glasses with various hydroxyl impurities. The refractive index was measured at 15 °C and 35 °C at 1.707–0.238 μm wavelengths. The temperature coefficient of a low-OH group (110 wt. ppm) containing glass increased from 8.0 ± 0.2 × 10^?6/°C (at 1.707 μm) to 14.0 ± 0.2 × 10^?6/°C (at 0.238 μm), although it increased respectively from 7.0 ± 0.2/°C to 12.0 ± 0.2 × 10^?6/°C for a high-OH group (1300 wt. ppm) containing glass. The three-term Sellmeier equation, having two terms with resonance photon energies in the vacuum ultraviolet region and one term in the infrared region, was used to analyze the wavelength dispersion of the refractive index. Increasing temperatures shifted the resonance energy in the second term by ?4.14 ± 0.4 × 10^?4 eV/°C for low-OH (110 wt. ppm) glass and ?2.64 ± 0.4 × 10^?4 eV/°C for high-OH (1300 wt. ppm) glass. The fundamental absorption edge in the vacuum ultraviolet region shifted by ?8.8 ± 0.7 × 10^?4 eV/°C for the low-OH glass and ?6.3 ± 0.7 × 10^?4 eV/°C for the high-OH glass in a region of 25–100 °C. Both high-OH glass shift rates were lower than low-OH glass shift rates. The lower temperature coefficient for the Si–OH-related band probably explains the smaller temperature coefficient for high-OH glass: the absorption band of Si–O–H structure is located at lower energy side close to the fundamental absorption band associated with the Si–O–Si structure.     

Domain structure and birefringence studies on a 0.91Pb(Zn1/3Nb2/3)O3 ‐0.09PbTiO3 single crystal

Domain structure and phase transition sequence of 0.91PZN‐0.09PT single crystal, grown from high temperature solution, have been analysed using polarised light microscopy. The domain structure of (001)_cub cut single crystal exhibit co‐existence of rhombohedral and tetragonal phases. The sequence and phase transition temperatures have been determined from temperature dependence of birefringence. Birefringence measurements during heating and cooling reveal a first order nature of phase transition between rhombohedral (R3m) and tetragonal (P4mm). The birefringence was measured with accuracy of 10^‐3. However, dielectric measurement does not provide any evidence of R3m ‐ P4mm phase transition. It is shown that in‐situ analysis of domain structure and phase transition can be used as non‐destructive analytical tool for determination of local composition and phase transition sequence. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)