以BBOT为电子传输层的聚合物蓝色发光二极管

在前篇文章中[1]我们报导了以perylene掺杂的PVCz聚合物单层电致发光器件,得到蓝色发光,其亮度为59(cd/m2).在这篇文章中,我们以PVCz作为空穴传导层,BBOT为电子传导层制成了双层结构的发光二极管.亮度和效率都大大超过单层器件.     

多色有机薄膜电致发光器件及其稳定性

研究了绿色、红色、蓝色和白色四种有机薄膜电致发光器件。通过掺杂得到了高稳定性的绿色及红色器件 ,绿色器件的半寿命达 140 0 0h(初始亮度 10 0cd/m2 ) ,红色器件的半寿命为 75 0 0h(初始亮度 5 0cd/m2 )。还研究了具有空穴锁定层及非锁定层的两种不同结构的蓝色及白色器件。研究表明无论蓝色还是白色器件 ,具有空穴锁定层的器件稳定性较差 ,老化过程中界面势垒的变化很大。非锁定层的蓝色及白色器件的半寿命分别为 45 0h(初始亮度 5 0cd/m2 )和 30 0h(初始亮度 5 0cd/m2 )。在稳定性改善的基础上研制成功 96× 6 0线 ,分辨率为 2线 /mm的绿色矩阵显示屏 ,设计和研制了驱动及控制电路 ,实现了动态显示     

发光效率及稳定性改善的有机薄膜电致发光器件

不久前,我们报导了以TPD为空穴传输层,Alq为电子传输兼发光层的双层薄膜电致发光器件,在定电流密度6mA/cm2连续驱动下,初始亮度106cd/m2下降至一半亮度的时间为120小时,而继续操作500小时,亮度仍有38cd/m2[1]。在这篇文章中,我们将报道一个在上述器件的空穴传输层TPD中掺杂而构成的新器件。这个新器件发光亮度和效率比原器件增加了50%,而稳定性增加了近10倍,初始亮度165cd/m2的半亮度寿命达1200小时。     

空穴传输层掺杂SrF2的高效率蓝色磷光OLED器件

通过在OLED器件的空穴传输层中掺杂不同比例的SrF2制作出了高效率蓝色磷光OLED器件.这种器件能有效提高蓝色磷光OLED器件的空穴注入与传输特性,降低器件的的工作电压,提高流明效率(19.11m/W)、电流效率(26.9 cd/A)以及亮度(22 220 cd/m2),和未经掺杂的参比器件相比,分别提高了85.4％...     

彩色有机薄膜电致发光及动态矩阵显示

研究了绿色、红色、蓝色和白色4种有机薄膜电致发光器件.通过掺杂得到了高稳定性的绿色及红色器件,绿色器件的半寿命达14000小时(初始亮度100cd/m²),红色器件的半寿命为7500小时(初始亮度50cd/m²).还研究了具有空穴锁定层及非锁定层的多种不同结构和材料的蓝色及白色器件.研究表明无论蓝色还是白色器件,具有空穴锁定层的器件稳定性较差,老化过程中界面势垒的变化很大.非锁定层的蓝色及白色器件中,新材料JBEM比DPVBi有更优越的性能.JBEM构成的蓝色器件的半亮度寿命为1035小时(初始亮度100cd/m²).由JBEM构成的白色器件中,由蓝色及红色掺杂在同一层的器件得到最好的稳定性,其半亮度寿命为2800小时(初始亮度100cd/m²),而且它具有发光颜色不随电流变化而变化的特点.在稳定性改善的基础上研制成功96×60线,分辨率为2线/mm的绿色及白色矩阵显示屏,还利用选择蒸发的方法制造了彩色矩阵屏,设计和研制了驱动及控制电路,实现了动态显示.     

基于mCP与UGH2为母体的双发光层高效率蓝色磷光OLED

以9,9'-(1,3-苯基)二-9H-咔唑(m CP)和1,4-二(三苯甲硅烷基)苯(UGH2)为母体,将常用的蓝光染料二(3,5-二氟-2-(2-吡啶)苯基-(2-吡啶甲酸根))合铱(Ⅲ)(FIrpic)掺入这两种母体材料中,制得具有双发光层结构的蓝色磷光有机电致发光器件,并对整个物理机制进行了阐述。该器件较基于m CP或UGH2为母体的单发光层器件有着更高的器件效率。器件的最大电流效率、功率效率、外量子效率分别为21.13 cd/A、14.97 lm/W、10.56%。器件亮度从100 cd/m2到3 000 cd/m2时,效率滚降为34.2%。     

吩基吡啶铍(Bepp2)配合物的高效蓝光器件

高荧光的吩基吡啶铍(Bepp2)作为发射层构成高效蓝色电致发光器件.这一由空穴注入层、空穴传输层、Bepp2发射层组成的多层器件,使用一电子传输层以获得高性能.这种器件结构,最大亮度达6 200cd·m-2、电致发光效率1.3 cd/A(0.71 lm/W),吩基吡啶铍(Bepp2)的电致发光光谱峰值在451 nm.这些初步的结果表明配合物铍应用于电致发光是非常有前景的材料.在化学方面的进一步考察和新的羟苯基吡啶金属配合物电致发光器件的优化也在进行中.     

稳定的蓝色及白色有机薄膜电致发光器件

报道了一种稳定的蓝色和白色有机薄膜电致发光器件,蓝色器件最大亮度为7526cd／m^2,最大效率1．451m／W,半亮度寿命1035h(初始亮度l00cd／m^2)。白色器件的最大亮度为14850cd／m^2,最大效率2．881m／W,色度x=0．31,y=0．38,且色度不随电流增大而变化,半亮度寿命为2860h(初始亮度100cd／m^2)。     

纳米结构氧化镍缓冲层对蓝色有机发光二极管性能的影响

在阳极和空穴传输层分别引入氧化镍纳米结构缓冲层,制备了蓝色有机发光二极管,对二极管的电学和光学特性进行了测试分析,研究了采用电化学方法制备的氧化镍纳米结构对器件的影响.结果表明,纳米结构氧化镍缓冲层能够有效地提高空穴-电子对的产生和复合效率,它的引入带来了高效的空穴注入及发光层中的载流子平衡,能有效提高有机发光二极管的电致发光特性.氧化镍缓冲层沉积时间为30 s的器件具有最高的亮度和电流效率,分别为42 460 cd/m2和24 cd/A,该器件的CIEx,y 色坐标为(0.212 9,0.325 2).     

基于溶液加工小分子材料发光层的有机-无机复合发光器件

报道了基于溶液加工有机小分子材料发光层、聚乙烯亚胺电子注入层的有机-无机复合发光器件. 优化了空穴传输层和磷光染料的掺杂浓度, 得到最佳发光效率的器件. 蓝光、黄光和红光器件的最大外量子效率为17.3%, 10.7% 和7.3%. 在发光亮度为1000 cd/m² 时, 蓝光、黄光和红光器件的外量子效率分别为17.0%, 10.6% 和5.8%, 器件效率下降较小. 原因在于同时采用空穴传输型和电子传输型的小分子材料作为共同主体材料, 器件具有较宽的载流子复合区域, 降低了三线激发态-三线激发态湮灭和三线激发态-极化子相互作用对器件发光效率的影响. 白光器件在亮度为1000 cd/m²时, 发光效率和功率效率为31 cd/A和 14.8 lm/W. 器件的色度为(0.32, 0.42), 色度比较稳定, 随电流的变化微小. 器件的效率较以往报道的有机-无机复合发光器件有显著的提高, 主要归因于在聚乙烯亚胺上能够制备特性良好的小分子材料薄膜, 以及小分子主体材料拥有较高的三线态能量和平衡的载流子传输特性, 能够获得高效的磷光发射.     

高亮度聚合物发光二极管及电极功函数的影响

聚合物发光二极管是当前研究的热点。目前研究主要沿着多色化、高亮度及高稳定性方向发展。     

Enhanced power efficiency for white OLED with MoO3 as hole injection layer and optimized charge balance

White OLEDs with a different hole injection layer (MoO₃ or m-MTDATA), and a different electron transport layer (Alq₃ or Bphen) have been investigated. With 9,10-bis (2-naphthyl)-2-t-butylanthracene (TBADN) doped with 3% P-bis (P-N, N-diphenyl-aminostyryl) benzene (DSA-ph) and 0.05% 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyl-julolidy-9-enyl)-4H-pyran (DCJTB) as white emitting layer, the MoO₃/ /Bphen based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.43 V and 4.54 lm/W respectively, which is independently reduced 40% and improved 57% compared with those of the m-MTDATA/ / Alq₃ based one, respectively. The energy level diagram of the devices and single-carrier devices are studied to explain the reasons for the improvement. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.     

Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer

The commercial mass production of perovskite solar cells requires full compatibility with roll‐to‐roll processing with enhanced device stability. In line with this, the present work addresses following issues simultaneously from multiple fronts: (i) low temperature processed (140 °C) ZnO is used as electron transport layer (ETL) for fabricating the mixed organic cation based perovskite solar cells, (ii) the expensive hole transporting layer (HTL) spiro‐OMeTAD is replaced with F4TCNQ doped P3HT and (iii) the fabrication method does not incorporate the dopant TBP which is known to induce degradation processes in perovskite layer. All the devices under study were fabricated in ambient conditions. The F4TCNQ doped P3HT (HTL) based devices exhibits 14 times higher device stability compared to the conventional Li‐TFSI/TBP doped P3HT devices. The underlying mechanism behind the enhanced device lifetime in F4TCNQ doped P3HT (HTL) based devices was investigated via in‐depth electronic, ionic and polaronic characterization. The enhanced polaronic property in F4TCNQ doped P3HT HTL device ascertains its superior hole extraction and electron blocking capability; and consequently higher stability retained even after a month of ageing.

     

A solution-processable small-organic molecules containing carbazole or phenoxazine structure as hole-transport materials for perovskite solar cells

Three low molecular weight compounds bearing carbazole units (1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9-yl}hexane and 9,9'-di{6-[3-(2-(4-methylphenyl)vinyl)-9-carbazol-9-yl]hexyl}-[3,3']bicarbazole) and phenoxazine structure (10-butyl-3,7-diphenylphenoxazine) were tested as hole-transporting materials in perovskite solar cells. Two of them were successfully applied as hole transporting layers in electroluminescent light emitted diodes. The examined compounds were high-thermally stable with decomposition temperature found at the range of 280–419 °C. Additionally, DSC measurement revealed that they can be converted into amorphous materials. The compounds possess adequate ionization potentials, to perovskite energy levels, being in the range of 5.15–5.36 eV. The significant increase in power conversion efficiency from 1.60% in the case of a device without hole-transporting layer, to 5.31% for device with 1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9- yl}hexane was observed.     

Efficient and low potential operative host/guest concentration graded bilayer polymer electrophosphorescence devices

This study investigates enhanced electrophosphorescence and its mechanism in poly(N-vinyl carbazole) (PVK): N,N′-diphenyl-N,N′-bis(3-methylphenyl)-[1,1-biphenyl]-4,4′-diamine (TPD)/2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD): fac-tris(2-phenylpyridine)iridium [Ir(ppy)₃] concentration graded bilayer electroluminescence devices. The two layers are partially intermixed at the bilayer interface because the upper layer (composed of Ir(ppy)₃ and PBD) was spun cast from a solvent that slightly swells the bottom layer (composed of PVK and TPD). Moreover, PBD in the upper layer can act as an efficient electron transport layer as well as a hole blocking layer, resulting in greatly enhanced electron–hole recombination. An indium tin oxide (ITO)/3,4-polyethylenedioxythiophene–polystyrenesulfonate (PEDOT)/[PVK:TPD/Ir(ppy)₃:PBD] bilayer/LiF/Al device showed dramatically decreased turn-on and driving voltages, enhanced luminescence efficiency, and narrower emission spectra compared to those of conventional ITO/PEDOT:PSS/[PVK:TPD:Ir(ppy)₃:PBD] blend/LiF/Al devices.     

Electrophosphorescent devices with solution processible emitter and hole transport layer stack

The light emitting behavior of the electrophosphorescent devices with solution-processible hole transport layer and light emitting layer was characterized. We have introduced the hole-transporting stacked layer composed of poly(3,4-ethylenedioxy thiophene): poly(4-styrenesulfonate) [PEDOT:PSS] and thin perfluorinated ionomer, aiming for the improvement of charge injection and transport with corresponding high efficiency behavior. In order to provide a suitable work function, composition and thickness of the ultra-thin perfluorinated ionomer was optimized for being an interfacial layer condition; 34 cd/A of green phosphorescent device was obtained while the control device without ionomer shows the luminous efficiency of 29 cd/A. Both for devices with vacuum-deposited and solution-processed electrophosphorescent emitters, change of the device efficiencies were analyzed in terms of the work function, surface chemical composition, and charge conduction behavior.     

Au-Zn,TiPdAu电极对InGaAsP/InP双异质结发光管可靠性影响的研究

本文用AES研究了P-InP/TiPdAu热处理前后的界面特性,结果表明:TiPd层对Au的内扩散和In的扩散有阻挡作用。以TiPdAu作InGaAsP/InP双异质结发光管的p面电极、镀Au作热沉,采用In焊料,研究了器件的可靠性问题,在室温大气气氛中;70℃存储,70～80℃带电老化,三种条件下长时间考核结果表明:器件的I-V特性正常,末见正向压降明显变化。还比较了Au-Zn材料作p面电极用TiPdAu作肖脱基势垒限制层制成的器件和用TiPdAu作电极材料制成的深Zn扩散型器件在老化过程中的特性变化,后二种结构的器件,在长期老化过程中,有源区中有大面积DSD生长和增殖。     

利用p型掺杂技术制备的高效有机电致发光器件

利用氧化钼(MoO_x)作为p型掺杂剂,以掺杂层4,4'-bis(carbazol-9-yl)biphenyl(CBP):MoO_x作为空穴注入层,制备了一种结构为ITO/MoO_x/CBP:MoO_x/CBP/CBP:tris(2-phenylpyridine)iridium(III)(Ir(ppy)₃)/4,7-diphenyl-1,10-phenanthroline(Bphen)/LiF/Al的有机电致发光器件.器件中CBP同时作为空穴注入层、空穴传输层以及发光层母体材料,这种结构具有结构简单同时能有效降低空穴注入势垒等优点.研究发现,随着空穴注入层厚度的增加,器件的电流密度增加,表明p型掺杂层的引入能够有效增强空穴的注入;通过优化器件空穴注入层与空穴传输层厚度,器件性能有所提高,最大电流效率为29.8 cd/A,可以认为合理的优化空穴注入层和空穴传输层的厚度,使载流子在发光层中的分布更加平衡是提高器件发光效率的主要原因.值得指出的是,从电流效率最大值到亮度为 20 000 cd/m²时,优化后器件的效率衰减仅为17.7%,而常规器件的效率衰减则为62.1%,优化后器件效率衰减现象得到了明显的改善.分析认为优化后的器件中未掺杂的CBP有助于展宽激子形成区宽度,进而减弱了三线态-三线态湮灭、三线态-极化子淬灭现象,激子形成区的展宽是改善效率衰减的主要原因.     

基于新型腈类染料的白色有机电致发光器件的光谱特性

将腈类黄色荧光染料(2Z,2’Z)-3, 3’-(1,4-phenylene)bis(2-phenylacrylonitrile) (BPhAN)掺杂到poly(N-vinylcarbazole) (PVK)中作发光层,2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)作电子传输层和空穴阻挡层,制备了结构为Indium-tin oxide (ITO)/PVK∶BPhAN/BCP/Mg∶Ag的双层有机电致发光器件。通过调节BPhAN掺杂质量百分比(2 wt%, 4 wt%, 6 wt%),测试了器件在不同电压下的光谱特性,研究了Frster能量转移和直接载流子俘获在发光过程中的作用。结果表明,当掺杂浓度为4 wt%时可实现色度较好的白光,随着电压从6 V增大到16 V,CIE色坐标从(0.33, 0.37)变化到(0.32, 0.33),在白光区域有微小蓝移,这是由于随着电压的增大,能量转移效率和直接载流子俘获效率都降低,BPhAN黄光减弱,PVK发射的蓝光增强。     

含新型噁二唑类电子传输层的有机发光二极管性能研究

含吡啶基的噁二唑类材料(PDPyDP)作为一种新型的电子传输层被有效地应用于可溶性聚对苯乙炔(MEHPPV)为发光层的双层结构的有机发光二极管器件中,并将其光电性能与MEHPPV的单层结构器件及分别含苯环(PDPDP)和反1,2亚乙烯基(PDVDP)的另外两种二唑类电子传输层的双层结构器件进行比较.EL光谱测量表明,它们的发光均来自于MEHPPV层,而它们相似的器件电流和光输出随驱动电场变化的规律表明这些器件中相似的电荷转移过程,但电致发光阈值电场对于双层结构器件来说低于单层结构器件,而插入PDPyDP层的器件,其阈值电场最低.在电流密度为50mA/cm²时,单层器件及各插入PDVDP、PDPDP和PDPyDP的双层器件的外量子效率相对值分别为3×10^-3%,5×10^-3%,2×10^-2%和0.1%.并分析了插入PDPyDP使器件发光性能提高最为明显的原因.通过将此类器件的结构等作进一步优化,其最佳量子效率可高达1.44%.