首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到16条相似文献,搜索用时 156 毫秒
1.
多脉冲强流真空电子二极管研究   总被引:2,自引:0,他引:2  
研究了猝发脉冲串条件下真空强流电子二极管状态和输出电子束参数的变化规律, 建立了阴极等离子体膨胀效应的强流电子二极管参量的方程组, 并提出了阴极等离子体柱状膨胀模型. 实验研究了猝发多脉冲电子二极管输出多脉冲强流电子束的能力和束品质的变化, 给出了以天鹅绒为阴极发射体, 阴极等离子体膨胀速度小于1cm/μs时二极管输出的双脉冲电子束包络的变化和电子束的发射度及亮度.  相似文献   

2.
强流脉冲电子束二极管等离子体漂移速度的研究   总被引:7,自引:7,他引:0       下载免费PDF全文
 强流相对论电子束二极管阴阳极等离子体的形成和漂移,是二极管工作状态研究的重要组成部分。根据Child-Langmuir定律和二极管导流系数,结合二极管阴极电子发射面积的变化模型,给出了二极管阴阳极等离子体漂移所导致的阴阳极间隙闭合速度。  相似文献   

3.
以闪光二号加速器为研究平台,实验研究了前沿80 ns和34 ns脉冲电压下的二极管工作稳定性,通过对比实验结果和数值模拟结果,分析了脉冲前沿对二极管启动时间、阴极发射均匀性和阻抗重复性的影响,探讨了脉冲前沿对平面阴极二极管工作状态的影响机制。实验结果表明:脉冲前沿、二极管启动时间增加时,二极管的阻抗重复性降低;平面阴极易于在中心位置形成强区域发射,等离子体覆盖整个阴极发射面的时间随脉冲前沿增大而增加;屏蔽效应对阴极发射的影响随前沿增加而变大,进而导致阴极表面不均匀强点发射,等离子体运动速度增加,阴极有效发射面积减小,在等离子体运动速度和阴极有效发射面积共同作用下,二极管工作稳定性下降。  相似文献   

4.
爆炸发射阴极已广泛应用于高功率微波源,但常规场致爆炸发射阴极存在使用寿命短或电子发射不均匀的问题,改善阴极材料是解决这一问题的有效途径.本文将碳化硅晶须掺杂到石墨中制备得到阴极,从二极管电流波形上升沿和输出微波脉宽产生的变化着手,分析了碳化硅晶须掺杂石墨阴极表面材料成分和微观形貌对其电子发射性能的影响机理.研究发现,碳化硅晶须的存在,不仅有利于阴极场发射的快速启动、发射微点数目增多,还有利于降低等离子体膨胀速度、抑制脉冲缩短现象,使得输出微波脉宽增大.随着脉冲发射数量增多,碳化硅晶须掺杂石墨阴极表面被等离子体不断"抛光",微凸起形状因子减小、均匀性提高,场发射启动速度减慢,但输出微波脉宽增大.  相似文献   

5.
重复频率强流电子束的产生和传输实验研究   总被引:2,自引:2,他引:0       下载免费PDF全文
 电子束真空二极管重复频率运行时,它将表现出与单次运行时不同的特点。在电子束产生过程中,屏蔽半径应尽可能地小,且击穿延时时间较短,故选择石墨作为阴极材料。实验结果表明:在重复频率运行时,当环型阴极环厚较薄时,阴极的发射电流密度较大,因此对阴极的加热效应也加强,等离子体的膨胀速度加快,从而使得二极管阻抗减小,最后几次输出的电子束的电流较大,而电压减小;当重复频率较高时,由于加热效应使得阴极等离子体膨胀速度加快,最后几个脉冲阴极发射能力增强,波形重复性变差;当引导磁场强度增大时,阴极等离子体受到较大的磁场力约束,横向膨胀速度减慢,从而使得电子发射面积减小,总发射电流减小,二极管的阻抗增大。最后取引导磁场为1.5 T,阴极环厚为1 mm,得到重复频率100 Hz、束压827 kV、束流8.22 kA、脉冲波形之间重复性很好的均匀电子束输出。  相似文献   

6.
强流四脉冲电子束源实验研究   总被引:6,自引:3,他引:3       下载免费PDF全文
 为了进行强流多电子束源研究,对现有2MeV LIA 注入器进行了四脉冲改造,二极管脉冲电压约500kV。实验研究了天鹅绒阴极在四脉冲条件下的发射能力、传导电流负载效应以及阴极等离子体运动对阴极电子发射和束能量的影响。利用空间电荷限制流模型推算出阴极等离子体膨胀速率在1 ~4cm/μs之间。  相似文献   

7.
强流真空电子二极管是一种可以利用场发射的方法获得脉冲电流数kA到数MA的电真空装置,在强流加速器、高功率微波等领域得到广泛应用。强流电子真空二极管中,由于阴极材料气化和离子化等因素产生了阴极等离子体。阴极等离子体以一定速度向阳极运动,改变二极管阴阳极间实际间隙大小,并影响进一步引出电子束时二极管状态,从而影响引出束参数。  相似文献   

8.
强流电子二极管中阴极等离子体的膨胀   总被引:9,自引:0,他引:9       下载免费PDF全文
研究了强流四脉冲条件下电子真空二极管中阴极等离子体产生、膨胀和由于阴极等离子体膨胀导致二极管短路现象,通过所建立模型和大量实验数据给出了阴极等离子体膨 胀速率为0.5—4cm/μs,且脉冲过程中不均匀.分析了阴极等离子体膨胀对真空二极管电压、阻抗的影响和对多脉冲强流电子束参数的影响,并给出初步解决方案. 关键词: 多脉冲二极管 阴极等离子 膨胀速率  相似文献   

9.
 模拟了强流电子束源阴极表面附近区域数密度约1014 cm-3的等离子体的膨胀过程,观察到等离子体膨胀速度约为1 cm/μs。通过观察不同时刻阴极附近电子和离子的相空间分布、数密度分布和轴向电场分布,分析了等离子体膨胀过程。结果表明:等离子体的产生使得阴极表面电场增强,进而增大阴极的电流发射密度,电流密度增加使得空间电荷效应增强,并使等离子体前沿处的电场减小,当等离子体前沿处的电场减小到零时等离子体向阳极膨胀。讨论了等离子体温度、离子质量、束流密度和离子产生率对等离子体膨胀速度的影响。结果表明:等离子体的膨胀速度随着等离子体温度升高而增大,随离子质量增大而减小,但膨胀速度不等于离子声速;等离子体产生率越小,等离子体膨胀速度越小。  相似文献   

10.
蔡丹  刘列  巨金川  王海涛  赵雪龙  王潇 《物理学报》2016,65(4):45202-045202
采用电泳沉积法、碳纳米管纸和化学气相沉积直接生长法制备了三种碳纳米管阴极. 从强流发射性能、阴极等离子体膨胀、阴极起动、发射均匀性、工作稳定性以及脉冲放气特性等多个方面, 对比研究了碳纳米管阴极和化纤天鹅绒阴极的强流发射特性, 研究表明碳纳米管阵列和碳纳米管纸阴极发射性能明显优于普通化纤天鹅绒, 碳纳米管阴极发射性能与碳纳米管取向无关, 管壁的缺陷发射对无序碳纳米管阴极强流发射具有重要贡献. 碳纳米管阴极的起动场强约为普通化纤天鹅绒的2/3, 电场上升率相同时碳纳米管阴极比化纤天鹅绒阴极起动时间短12–17 ns. 碳纳米管阴极发射均匀性优于化纤天鹅绒, 尤其是碳纳米管阵列, 整个阴极表面等离子体光斑致密且均匀. 在二极管本底气压为6×10-3 Pa时, 碳纳米管纸阴极对应的二极管峰值气压不到0.3 Pa, 约为普通化纤天鹅绒阴极的1/5, 碳纳米管阵列阴极放气量在三种阴极中最少, 仅为0.042 Pa. 结果表明, 碳纳米管阴极在强流电子束源和相关高功率微波器件领域具有潜在的应用价值.  相似文献   

11.
A model to account for the shortening of the relativistic magnetron microwave pulse length based on radial cathode plasma motion is put forth and corroborated with measurements. If the dense, conducting, cathode plasma (and not the cathode itself) sets the diode electrostatic and microwave boundary conditions, its motion changes the magnetron resonance condition. Time varying microwave power envelopes and frequencies are both expected and observed. Based on the cathode plasma expansion rate, the main plasma ton constituent is inferred to be hydrogen. A magnetron experiment to defeat the pulse-shortening mechanism by heating the resonator successfully lengthened the pulse from 100 to 115 ns  相似文献   

12.
The plasma jet focusing and voltage distribution in the interelectrode gap of a vacuum arc with a ring anode and subjected to an axial magnetic field were studied theoretically. A two-dimensional model was developed based on the free plasma jet expansion into vacuum, and the steady-state solution of the fully ionized plasma in the hydrodynamic approximation was analyzed. It was found that the imposition of an axial magnetic field reduces the radial expansion of the plasma jet. The characteristic jet angle decreases from about 40° in the zero magnetic field case and approaches a value of about 20° with a 0.02 T magnetic field. The arc voltage consisting of the cathode drop, the plasma voltage drop, and anode sheath drop increased, with the imposition of a magnetic field, and decreased with the anode length. The model was compared to experimental measurements of the vacuum arc voltage behavior in an axial magnetic field, and good agreement was found  相似文献   

13.
This paper mainly investigates plasma characterization on carbon fiber cathodes with and without cesium iodide (CsI) coating powered by a ~300~ns, ~ 200~kV accelerating pulse. It was found that the CsI layers can not only improve the diode voltage, but also maintain a stable perveance. This indicates a slowly changed diode gap or a low cathode plasma expansion velocity. By spectroscopic diagnostics, in the vicinity of the cathode surface the average plasma density and temperature were found to be ~ 3× 1014~cm-3 and ~ 5~eV, respectively, for an electron current density of ~ 40~A/cm2. Furthermore, there exists a multicomponent plasma expansion toward the anode. The plasma expansion velocity, corresponding to the carbon and hydrogen ions, is estimated to be ~ 1.5~cm/μ s. Most notably, Cs spectroscopic line was obtained only at the distance ≤ 0.5~mm from the cathode surface. Carbon and hydrogen ions are obtained up to the distance of 2.5~mm from the cathode surface. Cs ions almost remain at the vicinity of the cathode surface. These results show that the addition of CsI enables a slow cathode plasma expansion toward the anode, providing a positive prospect for developing long-pulse electron beam sources.  相似文献   

14.
Cathode plasmas in pulsed high current vacuum diodes have been studied using optical interferometry and spectroscopy. Both aluminum and graphite cathodes were used and the diode current density was varied over a factor of ten. The cathode plasma inventory was seen to increase during the length of the pulse and the plasma density was seen to increase with increasing current density. Spectral line emission from H, CI, CII, and CIII was observed when either cathode was used. It is concluded that cathode plasma expansion is dominated by protons from cathode surface contaminants.  相似文献   

15.
The velvet electron emission characteristics and beams' brightness are investigated with a multi-pulsed mode. The results indicate that in the multi-pulsed mode the velvet emission is not uniform and the periphery emission is much stronger than that from the centre. The periphery emission contributes much more to the formation of the cathode plasma than the centre emission, which leads to diode impendence breakdown. The relationship between the cathode plasma expansion and the initial emittance of the cathode is deduced to describe the characteristics of the multi-pulsed vacuum diode. The emittance of the multi-pulsed beams is measured to be less than 1000mm·mrad. The brightness of the electron beams is better than 1× 10^8A/(m·rad)2.  相似文献   

16.
A numerical study is performed of a one-dimensional model of a high current plasma-filled diode, connected in a circuit with a voltage generator. Flow of the plasma from an external source into the diode anode-cathode gap through the plane of the cathode grid proves to have a definite effect on the diode current-voltage characteristic. An estimate is made of the limiting current above which formation of a cathode double layer occurs. Generation of explosive emission at a high value of current or the time derivative of current causes rapid expansion of the cathode layer due to a lack of the majority, electron current component and the presence of a phase intensified by plasma erosion. Dependence of the current-voltage characteristic on density of cathode explosive emission centers is noted.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 48–53, October, 1988.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号