Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

We have investigated the resistive switching mechanism in solution processed Au-reduced graphene oxide-polyvinyl alcohol (PVA) nanocomposites on flexible substrates. Monodispersed gold nanoparticles (Au NPs) attached to reduced graphene oxide (RGO) in aqueous PVA solution have been synthesized using a novel one pot technique. The fabricated hybrid device showed high On/Off switching ratio more than 10³ with low operating voltages. The performance of hybrid device can be effectively enhanced over control RGO device. The switching mechanism occurs from the electrochemical reduction/oxidation process of partially reduced graphene oxide. The proposed devices reveal superior asymmetric bipolar resistive switching characteristics attractive for solution processable flexible and transparent non-volatile memory applications.     

Beta-decay experiments of neutral atoms in a magneto-optical trap

Magneto optical traps (MOT) allow the cooling and storing of neutral atoms in a volume of a few cubic millimeters by use of laser beams and a magnetic field. Such devices offer new and exciting opportunities for precision measurements of radioactive isotopes. Here we present experiments performed with a double-MOT system coupled to the on-line separator TISOL at TRIUMF/Vancouver, Canada. For the first time, the Β-decay of free atoms stored in such a device could be observed. We report on coincidence measurements between beta-particles and the argon recoils in the decay of ³⁷K and ³⁸rm{m}}K. The charge state ratios of the recoil-ions were deduced by Time-Of-Flight separation in an acceleration field. The final goal of those investigations is a precision test of the Standard Model by measuring the –nu-correlation parameter a. This revised version was published online in July 2006 with corrections to the Cover Date.     

Broadband Radiative Cooling and Decoration for Passively Dissipated Portable Electronic Devices by Aperiodic Photonic Multilayers

Broadband radiative cooling and decoration for passively dissipated portable electronic devices by an aperiodic photonic multilayer structure is proposed theoretically. The designed optical structure can strongly emit in the infrared region from 6.9 to 40 µm within the blackbody radiation spectrum of electronic devices. Its emission spectrum exhibits good uniformity across different incident angles, enhancing the cooling performance. At an ambient temperature of 20 °C, the designed broadband radiative cooler can produce a net cooling power of 46.88 W m⁻², 65.95% higher than pure silica of the same thickness. At a typical junction temperature of 90 °C allowed by the microprocessor die, the net cooling power reaches 239.55 W m⁻², still with an 18.21% improvement over pure silica glass. In the visible regime, the designed structure displays a low uniformity in the reflection spectrum, producing an elegant color shift from the translucent gray color of normal direction to the silver and highly reflective look at a grazing angle. These results can be useful in future exterior and thermal designs of portable electronic devices.     

硅基底石墨烯器件的现状及发展趋势

石墨烯是一种由单层碳原子紧密排列而形成的具有蜂窝状结构的二维晶体材料,特殊的结构赋予了其优异的性能,如高载流子迁移率、电导率、热导率、力学强度以及量子反常霍尔效应.由于石墨烯优异的特性,迅速激起了人们对石墨烯研究以及应用的热情.石墨烯沉积或转移到硅片后,其器件构建与集成和传统硅基半导体工艺兼容.基于石墨烯的硅基器件与硅基器件的有机结合,可以大幅度提高半导体器件的综合性能.随着石墨烯制备工艺和转移技术的优化,硅基底石墨烯器件将呈现出潜在的、巨大的实际应用价值.随着器件尺寸的纳米化,器件的发热、能耗等问题成为硅基器件与集成发展面临的瓶颈问题,石墨烯的出现为解决这些问题提供了一种可能的解决方案.本文综述了石墨烯作为场效应晶体管研究的进展,为解决石墨烯带隙为零、影响器件开关比的问题,采用了量子限域法、化学掺杂法、外加电场调节法和引入应力法.在光电器件研究方面,石墨烯可以均匀吸收所有频率的光,其光电性能也受到了广泛的关注,如光电探测器、光电调制器、太阳能电池等.同时,石墨烯作为典型的二维材料,其优越的电学性能以及超高的比表面积,使其作为高灵敏度传感器的研究成为纳米科学研究的前沿和热点领域.     

Scalable bottom‐up assembly of suspended carbon nanotube and graphene devices by dielectrophoresis

Bottom‐up assembly by dielectrophoresis (DEP) has emerged in recent years as a viable alternative to conventional top–down fabrication of electronic devices from nanomaterials, particularly carbon nanotubes and graphene. Here, we demonstrate how this technique can be extended to fabricate devices containing carbon nanotubes and graphene suspended between two electrodes over a back‐gate electrode. The suspended device geometry is critical for the development of nano‐electromechanical devices and to extract maximum performance out of electronic and optoelectronic devices. This technique allows for parallel assembly of devices over large scale. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Immersion cooling of silicon photomultipliers (SiPM) for nuclear medicine imaging applications

Silicon photomultipliers (SiPM) are compact, high amplification light detection devices that have recently been incorporated into magnetic field-compatible positron emission tomography (PET) scanners. To take full advantage of these devices, it is preferable to cool them below room temperature. Most current methods are limited to the cooling of individual detector modules, increasing complexity and cost of scanners made-up of a large number of modules. In this work we investigated a new method of cooling, immersion of the detector modules in non-electrically conductive, cooled liquid. A small-scale prototype system was constructed to cool a relatively large area SiPM-based, scintillator detector module by immersing it in a circulating bath of mineral oil. Testing demonstrated that the system rapidly decreased and stabilized the temperature of the device. Operation of the detector illustrated the expected benefits of cooling, with no apparent degradation of performance attributable to immersion in fluid.     

影响固体材料激光冷却若干因素的研究

采用一个简单的二能级系统来分析激光冷却的微观物理过程，从微观的离子数等方面讨论制冷功率，从而计算出温度的变化，同时讨论了影响制冷功率的因素，找到了提高制冷功率的途径，详细分析了掺杂离子浓度、抽运功率、有效吸收截面对冷却极限的影响.最后比较了计算结果与实验数据，二者基本一致，从而验证了采用该二能级系统理论分析反斯托克斯荧光制冷的合理性.     

Graphene field-effect transistors with ferroelectric gating

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (n(BG)) provided by normal dielectric gating. More importantly, we prove that n(BG) can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric field-effect transistors with resistance change over 500% and reproducible no-volatile switching over 10? cycles.     

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Two-dimensional(2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides(TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials,possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor(FET) structures with ferroelectric gate dielectric construction(termed Fe FET). One type of device is for logic applications, such as a graphene and TMDC Fe FET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FET.     

双层石墨烯的化学气相沉积法制备及其光电器件

石墨烯是一种具有优异性质,在光电及能源领域具有巨大应用前景的二维材料.尽管单层石墨烯具有超高的迁移率,但是它的能带结构具有狄拉克锥(K点),即价带和导带并未有明显分离,所以在半导体器件方面的应用受到一定的限制.由双层石墨烯搭建而成的双门器件,在施加外加电场的情况下,它的带隙可以打开,并在一定范围内可调,这种性质赋予了双层石墨烯在半导体器件应用方面的前景.然而机械或者液相剥离石墨烯,在层数和大小方面可控性较差.如何通过化学气相沉积法可控制备双层石墨烯是目前研究的核心问题之一.本文主要综述了如何通过化学气相沉积法制备双层石墨烯和制备双层石墨烯器件的一系列工作,其中包括最新的研究进展,对生长机理的研究做了详细的介绍和讨论,并对该领域的发展进行了展望.     

Enhanced thermoelectric power in dual-gated bilayer graphene

The thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric-field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at a low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.     

薄片激光器喷流冷却技术

为了分析喷流冷却技术对薄片激光器的冷却效果,从湍流换热理论出发,定义了评定喷流冷却换热能力和冷却均匀性的两个参数:面均对流换热系数和平均最大温差。利用ANSYS CFX流体力学仿真软件,建立喷流冷却的物理模型,对多种喷板结构进行求解计算。设计加工了整套喷流冷却实验装置,并进行了模拟热源喷流冷却实验。分析结果表明,喷流冷却换热能力和冷却均匀性主要受喷板结构参数的影响,仿真计算结果可以定性地指导喷板结构参数的优化设计。     

High-performance electronic cooling with superconducting tunnel junctions

When biased at a voltage just below a superconductor's energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focused to structures of submicron size and consequently cooling power in the picowatt range, we have led a thorough study of devices with a large cooling power up to the nanowatt range. Here we describe how their performance can be optimized by using a quasi-particle drain and tuning the cooling junctions' tunnel barrier.     

Fano Resonance Effect in CO-Adsorbed Zigzag Graphene Nanoribbons

Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non-equilibrium Green's Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.     

Numerical study of localization length in disordered graphene nanoribbons

In this work, we study quantum transport properties of a defective graphene nanoribbon (DGNR) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. A line of defects is considered in the GNR device with different configurations, which affects on the energy spectrum of the system. The calculations are based on the tight-binding model and Green’s function method, in which localization length of the system is investigated, numerically. By controlling disorder concentration, the extended states can be separated from the localized states in the system. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

Mechanical systems in the quantum regime

Mechanical systems are ideal candidates for studying quantum behavior of macroscopic objects. To this end, a mechanical resonator has to be cooled to its ground state and its position has to be measured with great accuracy. Currently, various routes to reach these goals are being explored. In this review, we discuss different techniques for sensitive position detection and we give an overview of the cooling techniques that are being employed. The latter includes sideband cooling and active feedback cooling. The basic concepts that are important when measuring on mechanical systems with high accuracy and/or at very low temperatures, such as thermal and quantum noise, linear response theory, and backaction, are explained. From this, the quantum limit on linear position detection is obtained and the sensitivities that have been achieved in recent opto- and nanoelectromechanical experiments are compared to this limit. The mechanical resonators that are used in the experiments range from meter-sized gravitational wave detectors to nanomechanical systems that can only be read out using mesoscopic devices such as single-electron transistors or superconducting quantum interference devices. A special class of nanomechanical systems is bottom-up fabricated carbon-based devices, which have very high frequencies and yet a large zero-point motion, making them ideal for reaching the quantum regime. The mechanics of some of the different mechanical systems at the nanoscale is studied. We conclude this review with an outlook of how state-of-the-art mechanical resonators can be improved to study quantum mechanics.     

Liquid Crystalline Dispersions of Graphene‐Oxide‐Based Hybrids: A Practical Approach towards the Next Generation of 3D Isotropic Architectures for Energy Storage Applications

We report the use of the spray pyrolysis method to design self‐assembled isotropic ternary architectures made up of reduced graphene oxide (GO), functionalized multiwalled carbon nanotubes, and nickel oxide nanoparticles for cost‐effective high‐performance supercapacitor devices. Electrodes fabricated from this novel ternary system exhibit exceptionally high capacitance (2074 Fg^?1) due to the highly conductive network, synergistic link between GO and carbon nanotubes and achieving high surface area monodispersed NiO decorated rGO/CNTs composite employing the liquid crystallinity of GO dispersions. To further assess the practicality of this material for supercapacitor manufacture, we assembled an asymmetric supercapacitor device incorporating activated carbon as the anode. The asymmetric supercapacitor device showed remarkable capacity retention (>96%), high energy density (23 Wh kg^?1), and a coulombic efficiency of 99.5%.     

Integrating functional oxides with graphene

Graphene–oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O₃ (PZT) and high-κ HfO₂. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO₂-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene–oxide hybrid structures.     

Enhancement of lattice defect signatures in graphene and ultrathin graphite using tip‐enhanced Raman spectroscopy

Understanding the role of defects in graphene is the key to tailoring the properties of graphene and promoting the development of graphene‐based devices. Defects can affect the electronic properties of a device while also offering a means by which to functionalize the local properties. Using tip‐enhanced Raman spectroscopy (TERS), heightened defect sensitivity was demonstrated on graphene edges, folds, and overlapping regions. Measurements confirm that TERS can provide simultaneous structural and spectral information on a localized scale, hence offering defect characterization on a scale that is not obtainable using conventional Raman spectroscopy. This study observed preferential enhancement of the D band signal on multilayered graphene and ultrathin graphite; in addition, other key defect signatures were also enhanced and detected. We present our findings in relation to theoretical predictions of graphene defect signatures and an analysis of the sensitivity of TERS in measuring two‐dimensional structures. Copyright © 2013 John Wiley & Sons, Ltd.     

Kondo quantum criticality of magnetic adatoms in graphene

We examine the exchange Hamiltonian for magnetic adatoms in graphene with localized inner shell states. On symmetry grounds, we predict the existence of a class of orbitals that lead to a distinct class of quantum critical points in graphene, where the Kondo temperature scales as TK∝|J-Jc|1/3 near the critical coupling Jc, and the local spin is effectively screened by a super-Ohmic bath. For this class, the RKKY interaction decays spatially with a fast power law ～1/R7. Away from half filling, we show that the exchange coupling in graphene can be controlled across the quantum critical region by gating. We propose that the vicinity of the Kondo quantum critical point can be directly accessed with scanning tunneling probes and gating.