Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

In this work, we investigate the effect of the δ-Si doping on the barrier and the spacer thickness on the electronic properties of AlGaAs/GaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. Photoluminescence measurements as function of the temperature are used to determine the relaxation processes of the electron and the hole in the channel. The photoluminescence characterizations of Si-delta-doped AlGaAs/GaAs HEMTs structures have been studied in the 10–300 K temperature range. Low temperature PL spectra show the optical transition (E_e–h) that occurs between the fundamental states of electrons to holes in the GaAs channel. Increase of the Si-δ-doping density and decrease of the spacer width improve the two-dimensional electron gas confinement and decrease defects densities in the canal. The band structure of Si-delta-doped AlGaAs/GaAs HEMTs structures at T = 10 K has been studied theoretically using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation.     

Theoretical ultraslow bright and dark optical solitons in cascade-type GaAs/AlGaAs multiple quantum wells

We show the formation of ultraslow bright and dark optical solitons in a cascade-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) structure based on the biexciton coherence in the transient optical response, and study analytically and numerically with Maxwell–Schrödinger equations. The calculated velocity of bright and dark optical solitons are V_g = 2.7 × 10⁴ ms^? 1 and V_g = 8.91 × 10⁴ ms^? 1, respectively. Such investigation of ultraslow optical solitons in MQWs may provide practical applications such as high-fidelity optical delay lines and optical buffers in semiconductor quantum wells structure, because of its flexible design.     

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T =  10 K) on GaAs/Al_0.3Ga_0.7As quantum-well wires with effective wire widths ofL =  100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο_L10 =  285.6 cm⁻¹forL =  11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al_0.3Ga_0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.     

Influence of the antireflection,window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules

In order to well study the influence of the thickness and doping concentration on optical properties of transmission-mode GaAs photocathode, three exponential-doping and one uniform-doping photocathode modules were prepared by molecular beam epitaxy with a structure of glass/Si₃N₄/Ga_1 ? xAl_xAs/GaAs. By use of the spectrophotometer, the optical properties were separately measured including the reflectivity and transmissivity curves. Based on thin film optical principles, the optical properties and their integral values are calculated by matrix formula for the four-layer photocathode module. The result shows that the antireflection and window layers affect the peak and valley of the optical property curves and the active layer influences the absorptivity values of the transmission-mode cathode modules. The photocathode module has high absorptivity within the response waveband when the optimal module has the Si₃N₄ antireflection layer of 0.1 μm, the Ga_1 ? xAl_xAs window layer of more than 0.4 μm, and the GaAs active layer of 1.5 μm–2 μm and low average doping concentration.     

Photonic crystal nanocavities in GaAs/AlGaAs with oxidised bottom cladding

We present a solution to the difficult task of removing an oxide-based hard mask from a photonic crystal fabricated in the GaAs/AlGaAs system. We use a polymer backfill technique to seal the AlGaAs layer, thereby making it inaccessible to the wet-etch solution. This allows us to use a GaAs active layer for the photonic crystal placed on an oxidised AlGaAs layer which provides mechanical and thermal support. Using this technique, we fabricated GaAs-based photonic crystal cavities and measured respectable quality factors (Q ≈ 2200) despite the intrinsic asymmetry of the system. The technique presents a viable method for producing electrically injected photonic crystal cavities for operation on a mechanically stable and thermally conducting buffer layer.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

Mid-wave QWIPs for the [3–4.2 μm] atmospheric window

We report two approaches using Quantum Well Infrared Photodetectors for detection in the [3–4.2 μm] atmospheric window. Taking advantage of the large band gap discontinuity we demonstrated a strained AlInAs/InGaAs heterostructure on InP. The optical coupling in this structure has been experimentally and numerically investigated. The results show that the coupling is mainly due to guided modes. The second approach is based on double barrier strained AlGaAs/AlAs/GaAs/InGaAs active layers on GaAs. The segregation of the elements III in these structures has been investigated using a transmission electron microscope. The results show a strong modification of the conduction band profile. We demonstrate peak wavelengths at 3.9 μm for the InP based detector and 4.0 μm for the GaAs based detector. We report a background limited peak detectivity (2π field of view, 300 K background) at 4.0 μm of about 2 × 10¹¹ cm Hz^1/2 W^?1 at 77 K, and 1.5 × 10¹¹ cm Hz^1/2 W^?1 at 100 K.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

Optical properties of GaAs/Ga 1-xAlxAs ridge quantum wire: Third-harmonic generation

In this paper, the third-harmonic generation (THG) in GaAs/Ga_1 ? xAl_xAs ridge quantum wires is studied in detail. An analytic expression for the THG is obtained using a compact density matrix approach and an iterative procedure. Numerical calculations are performed for the typical GaAs/Ga_1 ? xAl_xAs ridge quantum wire. The results show that the maximum THG over 10^? 9_? m²_?/V²_? can be obtained. Another important point is that the structural parameters have great influence on the THG in this system.     

The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(3 1 1)B substrate

We fabricated multiple stacked self-organized InGaAs quantum dots (QDs) on GaAs (3 1 1)B substrate by atomic hydrogen-assisted molecular beam epitaxy (H-MBE) to realize an ordered three-dimensional QD array. High quality stacked QDs with good size uniformity were achieved by using strain-compensation growth technique, in which each In_0.35Ga_0.65As QD layer was embedded by GaNAs strain-compensation layer (SCL). In order to investigate the effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs QDs, the thickness of GaNAs SCL was varied from 40 to 20 nm. We observed that QDs were vertically aligned in [3 1 1] direction when viewed along [0 1 −1], while the alignment was inclined when viewed along [−2 3 3] for all samples with different SCL thickness. This is due to their asymmetric shape along [−2 3 3] with two different dominant facets thereby the local strain field around QD extends further outward from the lower-angle facet. Furthermore, the inclination angle of vertical alignment QDs became monotonously smaller from 22° to 2° with decreasing SCL thickness from 40 to 20 nm. These results suggest that the strain field extends asymmetrically resulting in vertically tilted alignment of QDs for samples with thick SCLs, while the propagated local strain field is strong enough to generate the nucleation site of QD formation just above lower QD in the sample with thinner SCLs.     

Effect of interface roughness on I–V relation of AlGaAs/GaAs heterojunction field effect transistor

We have modelled the interface roughness by Al atoms protruding into the GaAs layer at the AlGaAs/GaAs heterointerface. The I_sd − V_sdrelation is calculated to study the effect of the interface roughness on the carrier transport in an AlGaAs/GaAs heterojunction field effect transistor. With ideal conduction, I_sd − V_sdrelation is linear. The current becomes saturated when the Fermi level in the drain drops below the conduction bandedge of the source. Electron waves become scattered by interface roughness and the current is decreased. However, the interface roughness effect is small due to small size of scattering centers.     

Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (1 1 1) crystal plane in alkaline KOH solution

In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness R_q is smaller than 15 nm when using ultrasonic agitation and R_q is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness R_q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R_q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process.     

Electrical characteristics and efficiency of organic light-emitting diodes depending on hole-injection layer

In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq₃)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10⁻⁶ Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq₃/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.     

Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

We have performed magneto-transport experiments in modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) measurements have been performed in the temperatures between 1.8 and 275 K, while quantum Hall effect measurements in the temperatures between 1.8 and 47 K and magnetic fields up to 11 T.The variations of Hall mobility and Hall carrier density with nitrogen mole fractions and temperature have been obtained from the classical magnetotransport measurements. The results are used to investigate the scattering mechanisms of electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. It is shown that the alloy disorder scattering is the major scattering mechanism at investigated temperatures.The quantum oscillations in Hall resistance have been used to determine the carrier density, effective mass, transport mobility, quantum mobility and Fermi energy of two-dimensional (2D) electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. The carrier density, in-plane effective mass and Fermi energy of the 2D electrons increases when the nitrogen mole fraction is increased from y=0.004 to 0.015. The results found for these parameters are in good agreement with those determined from the Shubnikov-de Haas effect in magnetoresistance.     

Experimental study of minimum ignition energy of lean H2-N2O mixtures

Ignition energies for short duration (<50 ns) spark discharges were measured for undiluted and nitrogen-diluted H₂-N₂O mixtures of equivalence ratios ? = 0.15 and 0.2, dilution of 0% and 20% N₂, and initial pressures of 15–25 kPa. The ignition events were analyzed using statistical tools and the probability of ignition versus spark energy density (spark energy divided by the spark length) was obtained. The simple cylindrical ignition kernel model was compared against the results from the present study. Initial pressure has a significant effect on the width of the probability distribution, ranging from a broad (P = 15 kPa) to a narrow (P = 25 kPa) probability distribution indicating that the statistical variation of median spark energy density increases as initial pressure of the mixture decreases. A change in the equivalence ratio from 0.15 to 0.2 had a small effect on the median spark energy density. The addition of 20% N₂ dilution caused a significant increase in the median spark energy density when compared to no dilution. The extrapolation of the present results to atmospheric pressure, stoichiometric H₂-N₂O indicates that the electrostatic discharge ignition hazards are comparable to or greater than H₂-O₂ mixtures.     

Bi-assisted chemical etching of silicon in HF/Co(NO3)2 solution

The morphology and the photoluminescence (PL) of Bi-assisted electroless etched p-type silicon in HF–Co(NO₃)₂–H₂O solution as a function of etching time were studied. The scanning electron microscopy (SEM) observations have shown that the morphology of etched layers strongly depends on the etching time and it was observed that macropores filled with silicon crystallites are formed for etching time higher than 50 min. Moreover, it was found that the PL spectra show a red emission with a peak centred at 640 nm. The PL peak intensity reaches a maximum for etching time of 50 min, and then it decreases with increasing etching time. The Fourier transform infrared (FTIR) measurements have shown a strong increase in intensities of the relevant Si–H and in the amount of oxide (absorption band at 1070 cm^?1) for long etching time which was ascribed to an increase in the number of Si crystallites formed in the macropores.     

Dry etch chemistries for TiO2 thin films

Several different plasma chemistries were investigated for dry etching of TiO₂ thin films. Fluorine-based discharges produced the fastest etch rates (∼2000 Å min⁻¹) and selectivities >1 for Si over TiO₂. Chlorine-based discharges also showed a chemical enhancement over pure Ar sputtering and had selectivities <1 for Si over TiO₂ for a range of plasma conditions. Methane–hydrogen discharges produced very slow etch rates, below those obtained with Ar sputtering. The etched surface morphologies of TiO₂ were excellent in all three types of plasma chemistry. Small concentrations (2 at.%) of chlorine- or fluorine-containing residues were identified on the TiO₂ surface after Cl₂/Ar or SF₆/Ar etching, but these residues were water soluble.     

The structure and extinction of nonpremixed methane/nitrous oxide and ethane/nitrous oxide flames

Knowledge of combustion of hydrocarbon fuels with nitrogen-containing oxidizers is a first step in understanding key aspects of combustion of hypergolic and gun propellants. Here an experimental and kinetic-modeling study is carried out to elucidate aspects of nonpremixed combustion of methane (CH₄) and nitrous oxide (N₂O), and ethane (C₂H₆) and N₂O. Experiments are conducted, at a pressure of 1 atm, on flames stabilized between two opposing streams. One stream is a mixture of oxygen (O₂), nitrogen (N₂), and N₂O, and the other a mixture of CH₄ and N₂ or C₂H₆ and N₂. Critical conditions for extinction are measured. Kinetic-modeling studies are performed with the San Diego Mechanism. Experimental data and results of kinetic-modeling show that N₂O inhibits the flame by promoting extinction. Analysis of the flame structure shows that H radicals are produced in the overall chain-branching step 3H₂ + O₂ ? 2H₂O + 2H, in which molecular hydrogen is consumed. Hydrogen is also consumed in the overall step N₂O + H₂ ? N₂ + H₂O where stable products are formed. Inhibition of the flames by N₂O is attributed to competition between these two overall steps.     

Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures

Zinc delta-doped GaAs and pseudomorphic GaAs/In}_0.2Ga_0.8As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (full-width at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1 × 10¹³cm⁻²) By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility.