铁磁半导体/d波超导结的自旋极化输运

考虑到铁磁半导体和d波超导体中空穴的有效质量和费米速度错配,运用推广了的B londer-Tinkham-K lapw ijk(BTK)理论模型,研究了铁磁半导体/d波超导隧道结的电导谱。研究表明:(1)铁磁半导体和d波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)铁磁半导体的磁交换能对Andreev反射有抑制作用。     

Electron and phonon cooling in a superconductor-normal-metal-superconductor tunnel junction

We present evidence for the cooling of normal-metal phonons, in addition to the well-known electron cooling, by electron tunneling in a superconductor-normal-metal-superconductor tunnel junction. The normal-metal electron temperature is extracted by comparing the device current-voltage characteristics to the theoretical prediction. We use a quantitative model for the heat transfer that includes the electron-phonon coupling in the normal metal and the Kapitza resistance between the substrate and the metal. It gives a very good fit to the data and enables us to extract an effective phonon temperature in the normal metal.     

声发射监测隧道围岩活动性

目的是确定隧道围岩变形破裂的活动性，保证上方近距离高层大楼的安全使用，采用EAE－04声电测试系统，以测试大楼及隧道围岩的活动性，采用声发射（AE）和电磁辐射（EME）信号上升沿时间和持续时间的关系，排除噪音等的影响，确定有效信号；采用AE频度和能量率的变化规律，EME脉冲数的变化规律，来分析隧道周围岩体的活动性并进行实时检测，为大楼及隧道的稳定性评价提供了依据。     

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.     

Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schr?dinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.     

Theoretical study of the relation between interfacial imperfection and transport properties in magnetic tunnel junctions

The ab initio electronic structure of model Co/Al₂O₃ heterojunctions with varying interface quality is investigated. It is evidenced that the metal-induced gap states determine the position of the Fermi level relative to the bottom of the conduction band which defines the effective barrier height for tunnel transport. This introduces a new origin for barrier height fluctuations related to the interfaces.     

Delta-doped quantum wire tunnel junction for highly concentrated solar cells

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration.The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.     

Electronic cooling in superconducting tunnel junctions

The cooling power provided by the current through a superconductor/insulator/superconductor tunnel junction is studied theoretically. The influence of non-equilibrium distributions of the quasi-particles on the heat flow is analysed within a simple relaxation model. A superconducting gap enhancement can be explained within the equilibrium as well as the non-equilibrium model.     

Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to . If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.     

Design and performance of a small-scale aeroacoustic wind tunnel

The D5 aeroacoustic wind tunnel at Beihang University is a newly commissioned small-scale closed-circuit wind tunnel with low turbulence intensity and low background noise. The wind tunnel is built to study both aerodynamic and aeroacoustic performance of aircraft components or scaled models. The wind tunnel has two types of test sections, the closed type test section is used for aerodynamic tests while the open type test section is mainly used for aeroacoustic experiments. Both types of test section are 1 m in height and 1 m in width, and the maximum wind velocity in the test section can be up to 80 m/s. An anechoic chamber is built surrounding the test section to provide the non-reflecting condition. This paper provides an overview of design criteria and performance of the small-scale wind tunnel. The layout of the wind tunnel and some critical design treatments to improve aerodynamic and acoustic performance are discussed in detail. Some experiments are conducted to verify the performance of D5 wind tunnel, results confirm that the turbulence intensity is less than 0.08% in the core of test section and the background noise is comparable with other aeroacoustic wind tunnels. A scaled simplified nose landing gear model is also measured as a benchmark test, results reveal that noise radiated from the model is adequately higher than the background noise for a wide frequency range and remarkably consistent with other results from literatures.     

Coherent multiple charge transfer in a superconducting NbN tunnel junction

We measured shot noise and submillimeter-wave response in a superconducting NbN tunnel junction that had a subharmonic gap structure on the current-voltage (I-V) curve. We found that the observed effective charge, defined from the noise-current ratio, tends to a steplike function of voltage. In the presence of submillimeter-wave radiation of frequency v, novel step structures spaced by hv/2e below and above the half-gap voltage clearly appeared on the I-V curve, overlapping the ordinary photon-assisted tunneling steps spaced by hv/e. Observation of these features provides clear evidence that coherent multiple Andreev reflection processes occur in the NbN tunnel junction with low barrier transparency.     

基于PSD的风洞模型姿态角光学测量技术研究

开发了一种基于光电探测技术的风洞模型姿态角光学测量技术,实现了对姿态角的精确、实时、非接触测量。对激光探测头、模拟试验平台进行了优化设计,编写了功能齐全的实验软件,模拟了风洞试验运行实况,深入开展了一维和二维角度测量实验和分辨率测试实验。实验结果表明,该技术可对模型变化角度进行实时精确测量,测量范围达到了-10°～10°,测量精密度为0.0023°,测量准确度为0.0026°,分辨率可达到0.001°。该光学测量技术在风洞模型的角度测量和振动测量实验中切实可行,为测量风洞试验模型的姿态及振动提供了一种简洁有效的测量方法。     

Continuous-wave tunnel ring fiber laser

The continuous-wave oscillation of a tunnel ring fiber laser is demonstrated. The high losses encountered in tunneling systems are compensated for by a high-gain amplifying medium from barrier widths for 0 to lambda/2. The experimental observations are in good agreement with a simple theoretical model. This near-field probe system allows one to detect small displacements in the picometer range.     

Model experiment and analysis of pressure waves emitted from portals of a tunnel with a branch

A model experiment was performed to investigate pressure waves generated by a train passing by a branch and pulse waves radiated from portals of a main tunnel and the branch. For the experiment, the train speed was set as 400–500 km/h. The cross-sectional area ratio of the branch to the main tunnel was 0–0.5. The cross-sectional area ratio of the branch to the main tunnel was identified as a dominant factor in determining the magnitude of the pressure waves in the tunnel and the pulse waves radiated from the portals. Closed form expressions for the magnitude of the pressure changes generated by a train passing by a branch were derived using low Mach number approximation. Correlation between the pressure waves in the tunnel and the pulse waves radiated from the portals was clarified using simple acoustic theory. The overall tendency of the experimental results is explainable based on analytical results.     

Effect of tunnel resonances on fluxon radiation loss in a long S-I-S tunnel junction with weak structural disorder in the I layer

The expression for the density of the bias current, which compensates for the radiation loss of a fluxon moving in an S-I-S (superconductor-insulator-superconductor) tunnel junction with tunnel resonances-quantum resonant percolation trajectories (quantum jumpers), randomly formed in the disordered I layer [1], has been derived. The substantial physical difference between the described model and the model with microjumpers in the I layer [2] is that radiation friction acts on fluxon only in the narrow energy range of tunnel resonances.     

Magnetic-field dependence of tunnel couplings in carbon nanotube quantum dots

By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization.     

Room-temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier

Electron spin-polarized tunneling is observed through an ultrathin layer of the molecular organic semiconductor tris(8-hydroxyquinolinato)aluminum (Alq3). Significant tunnel magnetoresistance (TMR) was measured in a Co/Al2O3/Alq3/NiFe magnetic tunnel junction at room temperature, which increased when cooled to low temperatures. Tunneling characteristics, such as the current-voltage behavior and temperature and bias dependence of the TMR, show the good quality of the organic tunnel barrier. Spin polarization (P) of the tunnel current through the Alq3 layer, directly measured using superconducting Al as the spin detector, shows that minimizing formation of an interfacial dipole layer between the metal electrode and organic barrier significantly improves spin transport.     

正常金属-绝缘层-铁磁/超导结微分电导峰的Zeeman劈裂

通过求解Bogoliubov-de Gennes(BdG)方程，利用推广的Blonder-Tinkham-Klapwijk(BTK)理 论，计算了考虑结界面粗糙散射情况下正常金属-绝缘层-铁磁超导结（N/I/FS）的微分电导 .研究表明，铁磁超导态中的磁交换能E_h能使微分电导峰产生Zeeman劈裂， 劈裂峰的 能量间隔为2E_h，结界面势垒散射和结界面粗糙散射降低了隧道结的微分电导峰 值. 关键词： N/I/FS超导结 铁磁超导共存态 微分电导 Zeeman劈裂     

Magnetization reversal mechanism of magnetic tunnel junctions

Using the ion-beam-sputtering technique,we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs).We have observed double-peaked shapes of curves,which have a level summit and a symmetrical feature,showing the magnetoresistance of the junction as a function of applied field.We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses.We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance.The microstructures of hard-and soft-magnetic layers and interfaces of ferromagnets and insulators were probed.Analysing the influence of MJT microstructures,including those having clusters or/and granules in magnetic and non-magnetic films,a magnetization reversal mechanism(MRM) is proposed,which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles.We discuss the influence of MTJ microstructures,including those with clusters or/and granules in the ferromagnetic and non-magnetic films,on the MRM.     

Tunneling magnetothermopower in magnetic tunnel junction nanopillars

We study tunneling magnetothermopower (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by an electric heater line. Thermopower voltages up to a few tens of μV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence the thermal gradient. The thermopower signal varies by up to 10 μV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100 μV/K and a large TMTP change of the tunnel junction of up to 90%.