Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations

A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 m channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz.     

Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (I_Dmax), the threshold voltage (V_th), the peak dc trans-conductance (g_m), and unity current gain cut-off frequency (f_T). The calculated values of f_T (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.     

10 Tera Hertz Operation in One-Dimensional Quantum Interference Transistor (1-D QUIT) Devices

A high performance quantum interference transistor (QUIT) realized using high mobility 1-D MODFET channels is presented. The operation of this 1-D QUIT is based on electrostatic Aharonov-Bohm quantum interference effect. The channel length of the device is smaller than the inelastic coherence length of the electrons in the quantum well wire channel, otherwise scattering will randomize electron's phase and destroy the quantum interference effect. Transport characteristics of the 0.2 m channel 1-D QUIT are calculated at 4.2 °K and compared with a two-dimensional QUIT device reported in literature. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with its two-dimensional counterpart. The maximum frequency of operation of the 1-D QUIT is in the Tera Hertz regime, which makes it very attractive device for high frequency applications.     

Self-Aligned SiGe MOS-Gate FET with Modulation-Doped Quantum Wire Channel for Millimeter Wave Application

This paper describes a self-aligned SiGe MOS-gate field-effect transistor (FET) having a modulation-doped (MOD) quantum wire channel. An analytical model based on modified charge control equations accounting for the quantum wire channel, is presented predicting the transport characteristics of the MOS-gate MODFET structure. In particular, transport characteristics of devices having strained SiGe layers, realized on Si or Ge substrates, are computed. The transconductance g_m and unity-current gain cutoff frequency (f_T) are also computed as a function of the gate voltage V_G. The calculated values of f_T suggest the operation of one-dimensional SiGe MODFETs to be around 200 GHz range at 77°K, and 120 GHz at 300°K.     

Some Questions of the Nevanlinna Theory for the Complex Half-Plane

In this paper we give variants of the logarithmic derivative lemma and the second main theorem for the complex half-plane. Here the second main theorem is a special case of a theorem concerning polynomial functions of the coordinates of a holomorphic curve f : C ₊ P ⁿ . This theorem is a variant for C ₊ of a theorem of A. Eremenko and M. Sodin, who considered an entire curve f : C ₊ P ⁿ . The proofs are realized because of the introduction of natural classes of subharmonic, -subharmonic, holomorphic, meromorphic functions in C ₊ . Such functions we shall call just functions.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

A rapid measurement of : The DECPMG sequence

The Driven-Equilibrium Carr–Purcell Meiboom–Gill (DECPMG) pulse sequence is a rapid method for obtaining the average ratio of longitudinal to transverse relaxation times T₁/T₂ as a function of T₂. Since this is a one-dimensional experiment, the T₁/T_2T2 ratio can be acquired, potentially, in just two scans; the second scan being a reference CPMG measurement. Conventionally, T₁/T₂ is determined from a two-dimensional T₁-T₂ relaxation correlation experiment. The method described here offers a significant reduction in experimental time without a reduction in signal-to-noise. The T₁/T₂ ratio is useful for comparing the behaviour of liquids in porous media. Here we demonstrate the application of the DECPMG sequence to the study of oil-bearing rocks by differentiating oil or water saturated rock cores, and by observing the relative strengths of surface interaction for water in two types of rock by measuring T₁/T₂ as a function of magnetic field strength.     

A two-channel model for transport across high T c bicrystal grain boundary junctions

This paper describes an investigation of the microscopic configuration of the barrier which exists at the boundary in high T _c grain boundary junctions. A model for describing the properties of bicrystal and biepitaxial grain boundary junctions is proposed. Two channels for transport currents are assumed, the supercurrent being carrier by one channel only. The measurable macroscopic parameters of a junction, (critical current density and normal state resistance) are computed in terms of the microscopic parameters that appear in this model. The model well describes major features of the characteristics observed for high T _c bicrystal junctions.     

LARGE-SCALE PATHOLOGY OF UNIVERSES WITH VII0×VIII ISOMETRIES

The goal of this paper is to show somewhat unexpected globally pathologic properties in universes described by a class of static planary symmetric exact solutions with G ₆-group of motion. In order to achieve this aim, the Killing vectors, the null geodesics and the Penrose diagrams corresponding to different expressions of g ₄₄=–e ^2f(z), with f(z) solutions of Einstein's equations, have been employed. Finally, woking in a particular gauge, we focus on the behaviour of the radiating electromagnetic modes and derive the observable components of E and B and the expressions of the essential component of the Umov-Poynting vector.     

Unusual Pathways of Triplet State Dynamic Relaxation in Meso-Aryl-Substituted Porphyrins and Their Chemical Dimers at 295 K

It was found that mono- and di-meso-phenyl substitution in octaethylporphyrins (OEP)and their chemical dimers with the phenyl ring as a spacer manifests itself in the dramatical shortening of T₁ state lifetimes at 295 K (from 1.5 ms down to 2–5 s in degassed toluene solutions). On the other hand, this substitution does not influence spectral-kinetic parameters of S₀ and S₁ states. The enhancement of the T₁ state non-radiative deactivation is explained by torsional librations of the phenyl ring around a single C-C bond in sterically encumbered OEP molecules leading to non-planar dynamic distorted conformations in the excited T₁ states. For these compounds with electron-accepting NO₂-groups in the meso-phenyl ring the strong non-radiative deactivation of S₁ and T₁ states (by 2–3 orders of magnitude) is observed upon the displacement of NO₂-group from para-to ortho-position of the phenyl ring. The S₁ state quenching is caused by the direct intramolecular electron transfer to low-lying CT state of the radical ion pair (the normal region, non-adiabatic case presumably, V = 130–190 cm^–1 in dimethylformamide). The additional deactivation of the T₁ state is connected with thermally activated transitions to upper-lying CT states as well as the strengthening of intersystem crossing probabilities.     

Kinetics of reversible polymerization

This paper extends the kinetic theory of irreversible polymerization (Smoluchowski's equation) by including fragmentation effects in such a way, that the most probable (equilibrium) size distribution from the classical polymerization theories is contained in our theory as the stationary distribution. The time-dependent cluster size distributionc _k (a(t)) in Flory's polymerization modelsRA _f andA _f RB _g , expressed in terms of the extent of reaction, has the same canonical form as in equilibrium, and the time dependence of(t) is determined from a macroscopic rate equation. We show that a gelation transition may or may not occur, depending on the value of the fragmentation strength, and, in case a phase transition takes place, we give Flory- and Stockmayer-type postgel distributions.Inspec numbers: 0550, 6460, 8235, 6475.     

Equilibrium ring formation in polymer solutions

This paper delivers a flexible formalism for handling equilibrium ring formation. Based on graphical models of polymerization, it includes as special cases the Flory-StockmayerRA _f model, the FloryA _f RB _g model, and Gordon's branching process formalism. When simple ring formation occurs in equireactive systems, it also includes the Jacobson-StockmayerRA ₂ and HoeveRA _f models. The formalism is built from first principles in statistical mechanics and all assumptions are clearly stated. All parameters are given in terms of thermodynamic variables. With ring weights generalizing the Jacobson-Stockmayer Gaussian random walk, the formalism yields results for branchingRA _f ,A _f RB _g , andRA _f -RB _g polymer models. Equireactivity then gives explicit solutions. The equireactiveRA _f -RB _g model compares favorably with data from gel-point vs. dilution experiments. With the exception of the Spanning Tree Approximation, graphical models of polymerization suffer from combinations of the following defects: equireactivity assumptions, restrictions to one type of monomer or bond, absence of rings, or absence of fused rings. This paper provides a promising exact approach to handling all of these problems simultaneously.     

High Performance (fT~500GHZ) In0.52Al0.48As/In0.53Ga0.47As/InP Quantum Wire MODFETs Employing Asymmetric Coupled-Well Channels

A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of V_g, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 m long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In_0.52Al_0.48As/In_0.53Ga_0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (I_d-V_d) and frequency responses (f_T-V_g) of the proposed structures.     

Efficient heteronuclear dipolar decoupling in solid-state NMR using frequency-swept SPINAL sequences

Aiming to improve heteronuclear spin decoupling efficiency in NMR spectroscopy of solids and liquid crystals, we have modified the original Small Phase Incremental ALteration (SPINAL) sequence by incorporating a frequency sweep into it. For the resulting sequence, termed SW_f-SPINAL, the decoupling performance of a large number of sweep variants was explored by both numerical simulations and NMR experiments. It is found that introducing a frequency sweep generally increases both the ‘on-resonance’ decoupling performance and the robustness towards parameter offsets compared to the original SPINAL sequence. This validates the concept of extending the range of efficient decoupling by introducing frequency sweeps, which was recently suggested in the context of the frequency-swept SW_f-TPPM method. The sequence found to be best performing among the SW_f-SPINAL variants consists of fully swept 16 pulse pairs and is designated (32)-SPINAL-32. Its good decoupling performance for rigid spin systems is confirmed by numerical simulations and also experimentally, by evaluating the CH₂ resonance of a powder sample of l-tyrosine under MAS. For moderate MAS frequencies, the new sequence matches the decoupling achieved with SW_f-TPPM, and outperforms all other tested sequences, including TPPM and SPINAL-64. (32)-SPINAL-32 also shows excellent decoupling characteristics for liquid crystalline systems, as exemplified by experiments on the 5CB liquid crystal.     

Ge组分对应变Si1-xGe x 沟道p-MOSFET电学特性影响

利用二维数值模拟方法,研究了不同Ge组分应变Si_1-xGe _x 沟道p-MOSFET的电容-电压特性以及阈值电压的变化情况.计算结果表明:提高应变Si_1-xGe _x 沟道层中的Ge组分,器件亚阈值电流明显增大;栅电容在器件进入反型状态时产生显著变化;阈值电压的改变量与Ge组分基本成线性关系.通过改变Si_1-xGe _x 沟道的长度,并结 关键词： 1-xGe _x 沟道')" href="#">应变Si_1-xGe _x 沟道 p-MOSFET 空穴迁移率 栅电容     

Effect of Nd on the Superconductivity of Nd1+x Ba2-x Cu3O y with 0.1 ≤ x ≤ 0.35

The effect of Nd substitution at the Ba sites has been studied in Nd_1+x Ba_2-x Cu₃O _y system for 0.1 x 0.35. Orthorhombic to tetragonal structural phase transition occurs at about x = 0.17. With the increase of Nd, the T _c value decreases and T increases, where T is the difference between the onset and critical temperatures and indicates the sharpness of the transition. These changes are explained by ac-susceptibility measurements on Nd_1.1Ba_1.9Cu₃O_7.12 at 0.10 Oe. The susceptibility curves show the presence of about four phases, which are not detectable by X-ray diffraction technique.     

Thermodynamical properties and defect energetics of an n-body potential adapted to Cu3Au

By using molecular statics, molecular dynamics, and Monte Carlo techniques we validate a previously developed empirical n-body potential adapted to Cu₃Au. At T=0 K, predicted cohesive energies, lattice parameters, and elastic constants in CuAu and CuAu₃ as well as the formation energy of vacancies in Cu₃Au are in good agreement with experimental data. A satisfactory behavior is also obtained at T 0 K in Cu₃Au, for atomic mean-square displacements and elastic moduli. However, this model underestimates the vacancy migration energy and the order-disorder critical temperature when the latter is evaluated by Monte Carlo including both exchanges between atoms of different species and atomic moves simulating vibrations.     

Specific heat of the non-centrosymmetric superconductor Re3W

The alloys of non-centrosymmetric superconductor, Re 3 W, which were reported to have an α-Mn structure [P. Greenfield and P. A. Beck, J. Metals, N. Y. 8, 265 (1959)] with T c = 9 K, are prepared by arc melting. The values of ac susceptibility and the low-temperature specific heat of these alloys are measured. It is found that there are two superconducting phases coexisting in the samples with T c1 ≈ 9 K and T c2 ≈ 7 K, which are both non-centrosymmetric in structure as reported previously. By analysing the specific heat data measured in various magnetic fields down to a temperature of 1.8 K, we find that the absence of the inversion symmetry does not lead to an obvious deviation from an s-wave pairing symmetry in Re 3 W.