Tunneling-induced ultraslow bright and dark solitons in quantum wells

We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantumwell structure based on the tunneling induced transparency.In this semiconductor structure,the pump field is replaced by the electron-tunneling coupling,which can be modulated by a static electric field.With appropriate conditions,we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.     

Electromagnetically induced transparency and enhanced self-Kerr nonlinearity in a four-level scheme

We analyze the interaction of three laser fields with a four-level quantum system in a tripod configuration. We obtain an analytical expression for the linear susceptibility and nonlinear susceptibility of a weak-probe field and show that the properties of double electromagnetically induced transparency and the self-Kerr nonlinearity can be modified significantly by changing the ratio of the two coupling fields. We also show that a coherently prepared tripod scheme can be used for a giant self-Kerr nonlinearity generation with vanishing absorption in the case of optimal ratio. We present a physical understanding of our numerical results using the dressed-state approach and analytical explanation.     

Resonant enhancement of tunneling magnetoresistance in double-barrier magnetic heterostructures

We show that spin-dependent resonant tunneling can dramatically enhance tunneling magnetoresistance. We consider double-barrier structures comprising a semiconductor quantum well between two insulating barriers and two ferromagnetic electrodes. By tuning the width of the quantum well, the lowest resonant level can be moved into the energy interval where the density of states for minority spins is zero. This leads to a great enhancement of the magnetoresistance, which exhibits a strong maximum as a function of the quantum well width. We demonstrate that magnetoresistance exceeding 800% is achievable in GaMnAs/AlAs/GaAs/AlAs/GaMnAs double-barrier structures.     

Resonantly enhanced tunneling of Bose-Einstein condensates in periodic potentials

We report on measurements of resonantly enhanced tunneling of Bose-Einstein condensates loaded into an optical lattice. By controlling the initial conditions of our system we were able to observe resonant tunneling in the ground and the first two excited states of the lattice wells. We also investigated the effect of the intrinsic nonlinearity of the condensate on the tunneling resonances.     

Effect of frequency dependent electron-electron interaction on resonant tunneling

In electron resonant tunneling through a double barrier structure, we show that dynamical electron-electron interactions in the resonant well can give rise to additional tunneling satellites due to collective electronic excitations. We present a first principle treatment for frequency-dependent electron-electron interactions in the resonant tunneling problem. The result confirms the previously proposed plasmon assisted resonant tunneling mechanism. We also find that the particle-hole excitation has very little effect on resonant tunneling. Our result can be applied to study the effects of various electronic excitations on the resonant tunneling of electrons.     

Control of light in a quantized four level graphene atomic system via self and cross-Kerr nonlinearity

We investigate self and cross-Kerr nonlinearity in a four level quantized graphene atomic medium. The absorption, dispersion, transmission and subluminal/superluminal behaviors of a probe light field are studied. An amplification of the probe light field is observed in the absorption spectrum. The normal and anomalous slope of dispersion is also investigated at the positive/negative absorption region. It is shown that Kerr nonlinearity invert and enhance the subluminal/superluminal behaviors of the pulse and self-Kerr effect is found to be more subluminal/superluminal as compared to cross-Kerr effect. The results show significant applications in information storage, self and cross phase modulation and lasing without inversion.     

Gate-tunable valley-filter based on suspended graphene with double magnetic barrier structures

We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley. The valley-filtering effect is expected to be measurable by strain engineering. The proposed system can be used to fabricate a graphene valley filter with the large valley polarization almost 100%.     

Macroscopic quantum tunneling induced by a spontaneous field in intrinsic Josephson junctions

We theoretically study macroscopic quantum tunneling (MQT) in capacitively coupled Josephson junctions in the case that one of the junctions is in the finite voltage state. We find that the system can be mapped into a one dimensional model with a spontaneous periodic perturbation and calculate the MQT rate by using the time-dependent WKB method. Then the MQT rate is found to be resonantly enhanced and the enhancement of MQT rate is found even off the resonant point.     

Coupling effects of layers on spin transport in ZnSe/Zn 1 - x Mn x Se heterostructures

By use of the scattering matrix method, we investigate the coupling effects of layers on spin-polarized transport through semimagnetic semiconductor heterostructures with triple paramagnetic layers. Due to the coupling between double non-magnetic layers or among triple paramagnetic layers, spin tunneling exhibits interesting and complex features, which are determined by the structural configuration, the external fields as well as the spin orientations. It is shown that for electrons with either spin orientation tunneling through the symmetric or asymmetric heterostructures with triple paramagnetic layers, transmission resonances can approach the optimum under several biases. Moreover, for asymmetric structures, the resonant enhancement can occur under both several positive and negative biases. The spin-dependent resonant enhancement is also clearly reflected in the current density. In addition, for spin electrons traversing the multilayer heterostructure, the resonant splitting occurs in the transmission, which shows rich variations with the bias. These interesting results may be helpful to the development of spintronic devices. Received 28 April 2001     

Resonant tunneling mediated by resonant emission of intersubband plasmons

We study tunneling through resonant tunneling diodes (RTD) with very long emitter drift regions (up to 2 microm). In such diodes, charge accumulation occurs near the double barrier on the emitter side, in a self-induced potential pocket. This leads to a substantial enhancement of the wave function overlap between states of the pocket and the RTD, and, consequently, to increased off-resonant current mediated by various scattering processes. For RTD with the longest drift region (2 microm), an additional strong current peak is observed between the first and the second resonant peaks. We attribute this pronounced feature to the intersubband transitions mediated by resonant emission of intersubband plasmons.     

Enhancement of Kerr nonlinearity by multiphoton coherence

We propose a new method of resonant enhancement of optical Kerr nonlinearity that uses multilevel atomic coherence. The enhancement is accompanied by suppression of the other linear and nonlinear susceptibility terms of the medium. We show that the effect results in a modification of the nonlinear Faraday rotation of light propagating in an 87Rb vapor cell by changing the ellipticity of the light.     

Controlling self-Kerr nonlinearity with an external magnetic field in a degenerate two-level inhomogeneously broadened medium

The magnitude and sign of self-Kerr nonlinear coefficient in a degenerate two-level inhomogeneously broadened medium are simply controlled by an external magnetic field. By changing the external magnetic field we can switch a negative peak of Kerr nonlinear coefficient into a positive peak and vice versa, and transform a zero value of Kerr nonlinear coefficient into a positive or negative peak in resonant region. Such a controllable Kerr nonlinear coefficient can be used to manipulate the working characteristics of photonic devices such as optical switches and bistable elements.     

半导体量子器件物理讲座第四讲 共振隧穿器件及其电路应用

当一个电子的能量低于势垒高度时,它仍可以隧穿通过势垒,在一定条件下,双势垒结构中电子的隧穿几率甚至可以接近1,利用这种共振隧穿现象可以做成共振隧穿二极管,它的电流－电压特性曲线中会出现负微分电阻,利用这种负阻效应可以做成高频振荡器和倍频器等电子器件,双势垒结构与通常的双极晶体管结合可以做成共振隧穿双极晶体管,它们可以用来做成多态记忆器和模数转换器等器件。     

Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters

We have used scanning tunneling microscopy and scanning tunneling spectroscopy at liquid helium temperature to study the electronic structure of in situ cleaved, (110) oriented surfaces of InAs single crystals. Both unperturbed, atomically flat areas and areas with an atomic-size defect cluster have been investigated. We show that the anomalous behavior of the local tunneling conductivity, which indicates a pronounced enhancement of the semiconductor band gap for the flat areas, is consistent with band bending induced by charges localized at the apex of the tip. Atomic-size defect clusters contain additional charges which modify the band bending; this explains the different behavior of the tunneling conductivity near the defect cluster. The experimentally observed oscillations of the tunneling conductivity near the band gap edges can be directly related to resonant tunneling through quantized surface states which appear because of the band bending. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 130–135 (25 January 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Current rectification through a single-barrier resonant tunneling quantum structure

We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band profile, electrons undergo resonant tunneling when the bias creates a band-profile triangular well which can contain a resonant state aligned to the emitter Fermi energy. A diode with an active layer of ≈ 100Å, realized by AlGaAs/GaAs, has a Rectification Ratio, calculated at the current-peak bias at resonance, of ≈ 100. This value can be enhanced by putting in series several elements of this kind.     

Theory of extraordinary optical transmission through subwavelength hole arrays

We present a fully three-dimensional theoretical study of the extraordinary transmission of light through subwavelength hole arrays in optically thick metal films. Good agreement is obtained with experimental data. An analytical minimal model is also developed, which conclusively shows that the enhancement of transmission is due to tunneling through surface plasmons formed on each metal-dielectric interface. Different regimes of tunneling (resonant through a "surface plasmon molecule," or sequential through two isolated surface plasmons) are found depending on the geometrical parameters defining the system.     

Inter-Well Coupling and Resonant Tunneling Modes of MultipleGraphene Quantum Wells

We investigate the inter-well coupling of multiple graphene quantum well structures consisting of graphene superlattices with different periodic potentials. The general form of the eigenlevel equation for the bound states of the quantum well is expressed in terms of the transfer matrix elements. It is found that the electronic transmission exhibits resonant tunneling peaks at the eigenlevels of the bound states and shifts to the higher energy with increasing the incident angle. If there are N coupled quantum wells, the resonant modes have N-fold splitting. The peaks of resonant tunneling can be controlled by modulating the graphene barriers.     

Quantum dots in photonic crystals: From quantum information processing to single photon nonlinear optics

Quantum dots in photonic crystals are interesting both as a testbed for fundamental cavity quantum electrodynamics (QED) experiments and as a platform for quantum and classical information processing. We describe a technique to coherently access the QD-cavity system by resonant light scattering. Among other things, the coherent access enables a giant optical nonlinearity associated with the saturation of a single quantum dot strongly coupled to a photonic crystal cavity. We explore this nonlinearity to implement controlled phase and amplitude modulation between two modes of light at the single photon level—a nonlinearity observed so far only in atomic physics systems. We also measured the photon statistics of the reflected beam at various detunings with the QD/cavity system. These measurements reveal effects such as photon blockade and photon-induced tunneling, for the first time in solid state. These demonstrations lie at the core of a number of proposals for quantum information processing, and could also be employed to build novel devices, such as optical switches controlled at the single photon level.     

Bright spatial solitons in defocusing Kerr media supported by cascaded nonlinearities

We show that resonant wave mixing that is due to quadratic nonlinearity can support stable bright spatial solitons, even in the most counterintuitive case of a bulk medium with defocusing Kerr nonlinearity. We analyze the structure and stability of such self-guided beams and demonstrate that they can be generated from a Gaussian input beam, provided that its power is above a certain threshold.