纳米ZnO薄膜的制备及其可见光催化降解甲基橙

采用溶胶-凝胶方法制备ZnO透明溶胶, 在铝箔上涂膜后经500 ℃处理制得具有可见光响应的纳米ZnO薄膜光催化剂. 以甲基橙模拟有机污染物, 在可见光下研究了薄膜的降解性能, 结果表明, 用一片有效面积为200 cm2的ZnO/Al薄膜作为催化剂, 甲基橙的降解率达到96.3％, 比ZnO负载在玻璃上制得的ZnO/glass薄膜催化剂活性高得多. 采用扫描电镜与原子力显微镜对ZnO/Al薄膜制备条件进行了表征, 结果发现多孔ZnO/Al薄膜比致密ZnO/Al薄膜具有更高的活性, 实验制备的具有高活性的ZnO/Al薄膜颗粒平均直径为52.2 nm. 采用本方法制备的ZnO/Al薄膜是一种具有应用前景的, 能在可见光下降解有机物的有效光催化剂.     

制备条件对铝掺杂氧化锌(AZO)薄膜结构和电学性质的影响

本文利用溶胶-凝胶法在玻璃基底上制备得到了AZO透明导电薄膜,就两种不同的热处理-退火方式对薄膜的结构与性质的影响做了比较,研究了掺杂浓度、退火温度对薄膜结构及性质的影响规律.结果表明,高温、分层退火、铝掺杂均有利于生成结晶度高、具有C轴优先取向的AZO薄膜;高温和分层退火有利于晶粒长大,相反铝掺杂却有碍晶粒长大;薄膜的电学性质随退火温度和铝掺杂量的变化呈现规律的变化.通过分析AZO薄膜内的晶体生长过程,本文认为主要是制备条件和AZO晶体的晶面习性导致了薄膜的结晶度、晶体生长取向性和晶粒尺寸等方面的差异.     

溶胶-凝胶法在聚酰亚胺衬底上制备c轴取向ZnO薄膜

通过溶胶-凝胶工艺, 采用两步加热法在聚酰亚胺表面制备了具有c轴取向的ZnO薄膜. 通过差式扫描量热-热重分析(DSC-TGA)得出最佳的前热处理温度和后热处理温度分别为300和390 ℃. 通过X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜的晶体取向和表面形貌进行了分析, 描述了ZnO薄膜在聚酰亚胺上的生长过程. 拉伸实验结果表明, ZnO薄膜与聚酰亚胺衬底有较强的附着力.     

ZnO及其含锌混合氧化物薄膜的充放电性能研究

从充放电性能、晶体结构等方面考察了包括粉末状的ZnO、脉冲激光沉积方法制备的ZnO薄膜和含锌混合氧化物薄膜的电化学性质.结果表明,ZnO粉末制备的电极的嵌入容量随退火温度的升高而增大,掺入其他氧化物可以明显改善ZnO薄膜的电化学性能,在Ar气氛中,基片温度为400℃时,沉积的靶子成分为Zn:B:P:Al=1:1:0.5:0.5(摩尔比)的含锌混合氧化物薄膜具有较高的可逆容量,且循环性能良好.     

退火温度对PLD法制备ZnO:Eu3+,Li+薄膜结构和发光性质的影响

采用脉冲激光沉积(PLD)法在Si(111)衬底上制备了Eu3+,Li+共掺杂的ZnO薄膜,分别在450,500,550和600℃条件下进行退火,退火气氛为真空。利用X射线衍射(XRD)仪和荧光分光光度计研究了退火温度对薄膜结构和光致发光(PL)的影响。研究结果表明,Eu3+,Li+共掺杂的ZnO薄膜具有c轴择优取向,Eu3+,Li+没有单独形成结晶的氧化物,均以离子形式掺入ZnO晶格中。PL谱中有较宽的ZnO基质缺陷发光,ZnO基质与稀土Eu3+之间存在能量传递,但没有有效的能量传递。随着退火温度的增加,薄膜发光先增强后减弱,退火温度为550℃时发光最强。当用395 nm的激发光激发样品时,仅观察到稀土Eu3+在594 nm附近的特征发光峰,但发光强度随退火温度变化不明显。     

ZnO-TiO2和WO3-TiO2复合薄膜光催化剂的制备与性能

采用溶胶一凝胶法在多孔钛片上制备了 ZnO-TiO₂和WO₃-TiO₂复合半导体光催化剂,用甲基橙的光催化降解反应对所得薄膜的催化活性进行评价,并通过XRD和DTA等手段对样品进行了表征.结果表明,ZnO和WO₃的掺入降低了TiO₂的相转变温度,ZnO适宜掺杂量为0.1 mol%, WO₃适宜掺杂量为0.5 mol%, ZnO-TiO₂和WO₃-TiO₂复合薄膜比纯TiO₂薄膜光催化活性分別高出77.0%和96.7%.     

ZnO/Ag复合膜的制备及其润湿性转换研究

利用溶胶-凝胶技术制备了ZnO/Ag复合膜. 采用X射线粉末衍射和扫描电子显微镜对其物相组成、 晶型结构以及表面形貌进行了表征, 采用接触角测试仪对其润湿性进行了表征, 并研究了紫外光照射下Ag的掺杂量对ZnO薄膜润湿性的影响. 结果表明, 当Ag掺杂量(摩尔分数)为5%时, 所得膜的润湿性转换速率最快, 紫外光照3 h后, 其润湿性由超疏水性转换为亲水性, 黑暗中放置5 d后, 亲水性再次转换为超疏水, 实现了润湿性的可逆转换.     

TiO2-SiO2二维大孔薄膜的制备及其光催化活性研究

本文采用改进的溶胶-凝胶法制备了具有锐钛矿晶型结构和较小晶粒尺寸的TiO₂-SiO₂溶胶,并以聚苯乙烯(PS)小球为模板,采用旋涂法制备了新型大孔TiO₂-SiO₂复合薄膜,探究了煅烧温度、不同硅钛比以及溶胶添加量对所制备的大孔薄膜形貌及光催化活性的影响,并考察了该薄膜真空活化前后(Ti³⁺掺杂后)在紫外及模拟太阳光下光催化降解有机污染物罗丹明B的活性。通过Raman、DRS、SEM、EPR等方法对薄膜进行表征,发现制备的复合薄膜具有高透明度、良好附着力及优异的光催化活性。     

镧掺杂纳米TiO2覆膜陶瓷的光催化自洁净和抗菌性能

采用溶胶-凝胶法制备了掺镧纳米TiO2薄膜,并用浸渍提拉法覆膜在陶瓷表面.最佳工艺条件为:覆膜层数为3,焙烧温度为500℃,掺镧量为La3 /TiO2=0.003(摩尔比).用XRD、SEM等方法研究了薄膜的结构与形貌.陶瓷覆膜镧掺杂纳米TiO,具有良好的亲水性能,抗菌率高达99%.     

气相沉积法制备多孔ZnO薄膜及其光伏特性

通过气相沉积法, 在大气环境下退火, 制备了多孔ZnO薄膜. 这种多孔ZnO薄膜的制备方法具有成膜过程简单且工艺可精确控制等特点. 将多孔ZnO薄膜用胶体CdSe量子点来敏化获得太阳能电池, 具有1.01%的能量转换效率.     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

RF magnetron sputtering of ZnO and Al-doped ZnO films from ceramic and nanopowder targets: a comparative study

Undoped zinc oxide (ZnO) and aluminium-doped zinc oxide (ZAO) thin films have been prepared on glass substrates by RF magnetron sputtering from ceramic and nanopowder targets at room temperature (RT). The effects of target nature on the properties of the films have been studied. The X-ray diffraction (XRD) patterns show that ZnO and Al-doped ZnO thin films are highly textured along the c-axis perpendicular to the surface of the substrate from either nanopowder or ceramic targets. From the SEM images, it appears that the surface morphologies of ZAO films exhibit difference from that of undoped ZnO films. All films exhibit a transmittance higher than 80% in the visible region. The optical band gap (E_g) of ZnO and ZAO films obtained from nanopowder target is higher than those prepared using ceramic target. In two cases, Al-doping leads to a larger optical band gap (E_g) of the films.     

Synthesis of colloidal Mn2+:ZnO quantum dots and high-TC ferromagnetic nanocrystalline thin films

We report the synthesis of colloidal Mn(2+)-doped ZnO (Mn(2+):ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn(2+):ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in DMSO under atmospheric conditions. Synthesis was monitored by electronic absorption and electron paramagnetic resonance (EPR) spectroscopies. Zn(OAc)(2) was found to strongly inhibit oxidation of Mn(2+) by O(2), allowing the synthesis of Mn(2+):ZnO to be performed aerobically. Mn(2+) ions were removed from the surfaces of as-prepared nanocrystals using dodecylamine to yield high-quality internally doped Mn(2+):ZnO colloids of nearly spherical shape and uniform diameter (6.1 +/- 0.7 nm). Simulations of the highly resolved X- and Q-band nanocrystal EPR spectra, combined with quantitative analysis of magnetic susceptibilities, confirmed that the manganese is substitutionally incorporated into the ZnO nanocrystals as Mn(2+) with very homogeneous speciation, differing from bulk Mn(2+):ZnO only in the magnitude of D-strain. Robust ferromagnetism was observed in spin-coated thin films of the nanocrystals, with 300 K saturation moments as large as 1.35 micro(B)/Mn(2+) and T(C) > 350 K. A distinct ferromagnetic resonance signal was observed in the EPR spectra of the ferromagnetic films. The occurrence of ferromagnetism in Mn(2+):ZnO and its dependence on synthetic variables are discussed in the context of these and previous theoretical and experimental results.     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

Preparation and characterization of nanocomposite ZnO–Ag thin film containing nano-sized Ag particles: influence of preheating,annealing temperature and silver content on characteristics

Nanocomposite ZnO–Ag thin film containing nano-sized Ag particles have been grown on glass substrate by spin-coating technique using zinc acetate dihydrate as starting precursor in 2-propanol as solvent and monoethanolamine as stabilizer. Silver nanoparticles were added in the ZnO sol using silver nitrate dissolved in ethanol-acetonitrile. Their structural, electrical, crystalline size and optical properties were investigated as a function of preheating, annealing temperature and silver content. The results indicated that the crystalline phase was increased with increase of annealing temperature up to 550 °C at optimum preheating temperature of 275 °C. Thermal gravimetric differential thermal analysis results indicated that the decomposition of pure ZnO and nanocomposite ZnO–Ag precursors occurred at 225 and 234 °C, respectively with formation of ZnO wurtzite crystals. The scanning electron microscopy and atomic force microscopy revealed that the surface structure (the porosity and grain size) of the ZnO–Ag thin film (the film thickness is about 379 nm) was changed compared to pure ZnO thin film. The result of transmission electron microscopy showed that Ag particles were about 5 nm and ZnO particles 58 nm with uniform silver nanoclusters. Optical absorption results indicated that optical absorption of ZnO–Ag thin films decreased with increase of annealing temperature. Nanocomposite ZnO–Ag thin films with [Ag] = 0.068 M and [Ag] = 0.110 M showed an intense absorption band, whose maximum signals appear at 430 nm which is not present in pure ZnO thin films. The result of X-ray photoelectron spectroscopy revealed that the binding energy of Ag 3d_5/2 for ZnO–Ag shifts remarkably to the lower binding energy compared to the pure metallic Ag due to the interaction between Ag and ZnO.     

ZnO纳米薄膜的制备及其气敏性质研究

纳米氧化锌薄膜具有光电、压电、压敏和气敏等多种性质,使其在透明导体、发光元件、太阳能电池窗口、光波导器、单色场发射显示器、高频压电转换器、微传感器等方面具有广泛的用途.     

Structure and morphology of nanostructured zinc oxide thin films Prepared by dip-vs. spin-coating methods

In this study, we use dipping and spinning methods to coat glass slides with sol-gel ZnO thin films, composed of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol. The effect of the annealing temperature on the structural morphology and optical properties of these films is investigated. These ZnO films were preheated at 275 °C for 10 min and annealed either at 350, 450 or 550 °C for 60 min. As-deposited films, formed by amorphous zinc oxide-acetate submicron particles, are transformed into a highly-oriented ZnO after thermal treatment. The surface morphology, phase structure and optical properties of the thin films were investigated by scanning electron microscopy, X-ray diffraction (XRD) and optical transmittance. Both techniques produced nanostructured ZnO thin films with well-defined orientation. The annealed films were transparent in the visible range with an absorption edge at about 375 nm and a transmittance of ca 85–90% with an average diameter of 40 nm. XRD results show the film was composed of polycrystalline wurtzite, with a preferential c-axis orientation of (002) and a single sharp XRD peak at 34.40, corresponding to the hexagonal ZnO. The grain size is increased by the annealing temperature. Both coating techniques create sol-gel ZnO films with the potential for application as transparent electrodes in optic and electronic devices.     

水热合成Fe3+掺杂ZnO复合材料及其光催化活性

以Zn(Ac)2·2H2O、Fe(NO3)3·9H2O和NaOH为原料,采用水热法合成了Fe3+掺杂ZnO复合材料. 并用X射线衍射和扫描电子显微镜测试技术对合成样品的结构和形貌进行了表征. 结果表明,Fe3+掺杂ZnO合成产物为直棒状,直径为500 nm,长度为3 μm左右. 样品的紫外可见漫反射分析结果表明,在300～500 nm紫外可见光区域均有强的吸收. Fe3+掺杂ZnO作为光催化剂降解有机染料性能优于纯ZnO材料.     

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

ZnO thin films were successfully deposited on SiO₂/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.     

Optical and structural characteristics of yttrium doped ZnO films using sol–gel technology

Yttrium-doped ZnO gel was spin-coated on the SiO₂/Si substrate. The as-prepared ZnO:Y (YZO) thin films then underwent a rapid thermal annealing (RTA) process conducted at various temperatures. The structural and photoluminescence characteristics of the YZO films were discussed thereafter. Our results indicated that the grain size of YZO thin films being treated with various annealing temperatures became smaller as compared to the ones without being doped with yttrium. Furthermore, unlike other ZnO films, the grains of YZO thin films appeared to separate from one another rather than aggregating together as both types of the films were annealed under the same environment. The photoluminescence characteristic measured showed that the UV emission was the only radiation obtained. However, the UV emission intensity of YZO thin film was much stronger than that of the ZnO thin film after annealing them with the same condition. It was also found that the intensity increased with an increase in the annealing temperature, which was caused by the exciton generated and the texture surface of the YZO thin film.