Investigation of gas sensor based on In2O3:Ga2O3 film

We have fabricated a LPG and butane sensor whose sensitive element is a nanosize In₂O₃:Ga₂O₃ (96:4 weight %) film covered with a thin palladium catalytic layer. Technology of deposition of these films on a glassceramic substrate by the method of rf magnetron sputtering was elaborated. The surfaces of fabricated films were studied with use of a scanning electron microscope and the thickness of films was measured. The sensitivity of sensors based on the glassceramic/In₂O₃:Ga₂O₃ (96:4 weight %)/Pd structure depending on the thickness and sizes of film grains was studied. We revealed technological regimes of sputtering providing fabrication of films with the best parameters.     

Effect of thermal treatment on the electrotransport properties of thin-film In<Subscript>2</Subscript>O<Subscript>3</Subscript>, ZnO materials and the multilayer (In<Subscript>2</Subscript>O<Subscript>3</Subscript>/ZnO)<Subscript>83</Subscript> heterostructure

The effect heat treatment has on the electrotransport mechanisms in films of ZnO and In₂O₃, and in a multilayer (In₂O₃/ZnO)₈₃ structure obtained via ion-beam sputtering, is studied. It is shown that there is a mechanism of weak electron localization in the In₂O₃ and (In₂O₃/ZnO)₈₃ samples. The relaxation processes that occur during the heat treatment of In₂O₃ films are found to increase the length of elastic electron scattering, but to reduce this parameter in multilayer heterostructures.     

Methane sensor based on SnO<Subscript>2</Subscript>/In<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript> nanostructure

Two sets of samples of SnO₂/In₂O₃/TiO₂ system have been fabricated with different concentrations of component materials. In the first set TiO₂ with rutile structure was used, while in the second set it has the structure of anatase. Thin films (up to 50 nm) of obtained mixtures were deposited. Their sensitivity and selectivity with respect to methane (CH4) were studied. Nanostructure on the basis of 70%SnO₂ — 10%In₂O₃ — 20%TiO₂(anatase) exhibits sufficient sensitivity to methane.     

Application of MEH-PPV/SnO<Subscript>2</Subscript> bilayer as hybrid solar cell

The effects of oxygen content in the sputtering gas on the crystallographic and optoelectronic properties of 210 nm-thick Zr–doped In₂O₃ (Zr–In₂O₃) films by rf magnetron sputtering were initially studied. The results of X-ray diffraction show that the Zr–In₂O₃ films grown on glass substrates exhibit mixed crystallographic orientations. Moreover, the Zr–In₂O₃ film grown in an Ar atmosphere promotes the appearance of crystallographic orientation of (222). The surface of the Zr–In₂O₃ film becomes rougher as the oxygen content in the sputtering gas decreases; the current images obtained by conductive atomic force microscopy reveal that the surfaces of the Zr–In₂O₃ films exhibit a distribution of coexisting conducting and nonconducting regions, and that the area of the nonconducting surface increases with the oxygen content in the sputtering gas. The resistivity is minimized to 3.51×10⁻⁴ Ω cm when the Zr–In₂O₃ film is grown in an Ar atmosphere and the average transmittance in the visible light region is ∼85%. The optical band gap decreases as the oxygen content in the sputtering gas increases.     

Influence of a dopant source on the structural and optical properties of Mn doped ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

Thin films of ZnGa₂O₄:Mn²⁺ were deposited on quartz substrates using an rf magnetron sputtering technique. The sputtering target, ZnGa₂O₄ doped with 2 at. % manganese, was synthesized by a high temperature solid state reaction. Two different dopant sources were used to incorporate the dopant ions into the target, namely, manganese acetate and manganese oxide. The structural and optical properties of the thin films were studied using XRD, PL and transmission spectra. Polycrystalline ZnGa₂O₄:Mn with a spinel structure could be grown at an optimized substrate–target distance even at room temperature. No luminescence was observed in the as-deposited films grown using (CH₃COO)₂Mn as the dopant source in the target. Substrate heating or post-deposition annealing in the reducing ambient didn’t impart any luminescence to the films, ruling out the possibility of Mn²⁺ incorporation in the films. However, when using MnO as the manganese source in the target, the as-deposited films exhibited green photoluminescent emission (peak maximum at 508 nm) for substrate temperatures at and above 500 °C. This suggests that, in thin films, Mn incorporation and subsequent luminescent outcome is strongly influenced by the dopant source, which is quite different from the bulk phosphor behavior. PACS 81.15.Cd; 78.55.-m; 85.60.-q     

Interaction of carbon monoxide with In<Subscript>2</Subscript>O<Subscript>3</Subscript> and In<Subscript>2</Subscript>O<Subscript>3</Subscript>-Au nanocomposite

This is an IR spectroscopic study of the interaction of CO with In₂O₃ and the nanocomposite In₂O₃-Au. A mechanism for low-temperature detection of CO on nanocomposite In₂O₃-Au can be determined from these data. This process includes catalytic oxidation of CO through formation of intermediate complexes involving hydroxyl groups of In₂O₃.     

Conductivity of nanostructured India oxide films containing Co<Subscript>3</Subscript>O<Subscript>4</Subscript> or ZrO<Subscript>2</Subscript>

The effect of additives of cobalt and zirconium oxides on the conductivity of nanostructured composites based on indium oxide is studied. It is shown that addition of up to 20 wt % ZrO₂ to In₂O₃ leads to a sharp decrease in the conductivity of the composite. For the Co₃O₄?In₂O₃ system, the conductivity decreases up to a Co₃O₄ content of 60 wt %, after which it increases. At a Co₃O₄ content in the Co₃O₄?In₂O₃ system of up to 60 wt %, n-type conduction takes place, changing to p-type at 80 to 100 wt % Co₃O₄. Zirconium oxide exhibits practically no n-type conduction, so electric current in the ZrO₂?In₂O₃ system flows through In₂O₃ nanocrystals, i.e., n-type conduction takes place. Possible causes of the observed effects are considered.     

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y₃Al₅O₁₂ by the simultaneous ablation of two separate targets of Nd:Gd₃Ga₅O₁₂ (GGG) and Ga₂O₃. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.     

Sensor Properties of Nanostructured Systems Based on Indium Oxide with Co<Subscript>3</Subscript>O<Subscript>4</Subscript> or ZrO<Subscript>2</Subscript> Additives

The effect of Co₃O₄ and ZrO₂ additives on the sensory response of In₂O₃-based nanostructured composites to H₂ and CO is studied. It is shown that the addition of small amounts of Co₃O₄ or ZrO₂ to In₂O₃ leads to a sharp increase in the sensory response to hydrogen. The maximum sensory response of the ZrO₂?In₂O₃ composite to 1100 ppm of hydrogen increases from 80 to 270 as the ZrO₂ content changes 0 to 20 wt %. The response to CO varies only slightly. For Co₃O₄?In₂O₃ composites, the maximum response to H₂ and CO increases with the Co₃O₄ content within 0?10 wt %. A further increase in the Co₃O₄ content leads to a significant decrease in the response, with composites containing ～60 wt % Co₃O₄ being characterized by a very low efficiency. In the Co₃O₄?In₂O₃ system with a content of up to 60 wt % Co₃O₄, electronic conduction is realized, which changes to hole conduction at Co₃O₄ within 80?100 wt %. In the ZrO₂?In₂O₃ system, electric current flows through In₂O₃ nanocrystals, i.e., n-type conduction takes place. Possible reasons for the observed effects are discussed.     

Optical absorption by Nd<Superscript>3+</Superscript> and Gd<Superscript>3+</Superscript> ions in epitaxial films grown on Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> substrates from a lead-containing solution melt

Epitaxial films of composition (Gd,Nd)₃Ga₅O₁₂ or (Gd,Y,Nd)₃Ga₅O₁₂ with a neodymium content varying from 0.3 to 15 at. % are grown by liquid-phase epitaxy from a supercooled PbO-B₂O₃-based solution melt on Gd₃Ga₅O₁₂(111) substrates. The optical absorption spectra of the epitaxial films grown are measured in the wavelength range 0.2–1.0 µm. The results of interpreting the absorption bands observed in the spectra are used to construct the energy level diagrams of Nd³⁺ and Gd³⁺ ions in the matrices of the epitaxial films.     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

Structural and magnetic properties of layered Ca<Subscript>3</Subscript>Co<Subscript>4</Subscript>O<Subscript>9</Subscript> thin films

Layered cobalt oxides Ca₃Co₄O₉ thin films have been grown directly on c-cut sapphire substrates using pulsed laser deposition. X-ray diffraction and transmission electron microscopy characterizations show that the deposited films present the expected monoclinic structure and a texture along the direction perpendicular to the Al₂O₃(001) plane. The Ca₃Co₄O₉ structure presents six variants in the film plane. Rutherford backscattering spectroscopy shows that the films are stoichiometric and that the film thickness agrees with the nominal value. The susceptibility χ of the films, recorded along the c-axis of the substrate, after field cooling and zero field cooling in an applied field of 1 kOe shows two magnetic transitions at 19 and 370 K which agree well with previous findings on single crystal samples. In turn, at low temperature (5 K), the magnetization curve along the c-axis exhibits coercive field and remanent magnetization much smaller than those reported for bulk samples, which can be related to the influence of structural variants and structural defects.     

Catalytic growth and characterization of Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires

β-Ga₂O₃ nanowires have been synthesized using Ga metal and H₂O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga₂O₃ nanowires are achieved by separation of Ga metal and H₂O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga₂O₃ nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature. Received: 27 June 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +886-6/234-4496, E-mail: wujj@mail.ncku.edu.tw     

Evolution in shapes of a series of (111)-based In<Subscript>2</Subscript>O<Subscript>3</Subscript> particles

In₂O₃ particles with different morphology were controllably synthesized on silicon substrates by thermal evaporation of In grains at 900 °C. The structure and morphology of the In₂O₃ particles were evaluated using X-ray diffraction, and scanning and transmission electron microscopies. The evolution in shapes as the ratio of {100} relative to {111} increases is clearly observed. The photoluminescence spectrum of the obtained In₂O₃ structures exhibits UV emission centered at about 378 nm and wide-band emission covering the green and orange regions with three peaks around 525, 572, and 604 nm. PACS 81.05.Hd; 81.07.Bc; 81.16.-c; 61.46.-w; 81.40.Gh     

Photoluminescence behavior of pulsed laser deposited ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin-film phosphors grown on various substrates

ZnGa₂O₄ thin-film phosphors have been grown on Si(100), Al₂O₃(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series of ZnGa₂O₄ films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity and photoluminescence (PL) of the ZnGa₂O₄ films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate. The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during deposition. The PL properties of pulsed laser deposited ZnGa₂O₄ thin films have indicated that Al₂O₃(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa₂O₄ thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending from 350 to 600 nm and peaking at 460 nm. Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr     

The study of optical properties of amorphous thin films of mixed oxides In<Subscript>2</Subscript>O<Subscript>3</Subscript>—SnO<Subscript>2</Subscript> system,deposited by co-evaporation

A discussion of optical properties of mixed oxides In₂O₃—SnO₂ system is presented. Film thickness, substrate temperature, composition (in molar %) and annealing have a profound effect on the structure and optical properties of these films. Initially the increase in band gap with the increase of SnO₂ content in In₂O₃ is due to the increase in carrier density as a result of donor electrons from tin. The decrease in band gap above the critical Sn content is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in band gap with film thickness is caused by the increase in free carrier density which is generated by (i) Sn atom substitution of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. The decrease in band gap with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorate the film properties and reduce the mobility of the carriers, or to the formation of indium species of lower oxidation state (In²⁺).     

Multinuclear MAS NMR Investigation of Sol-Gel and Ball-Milled Nanocrystalline Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

⁷¹Ga magic-angle spinning (MAS) nuclear magnetic resonance (NMR) has been used to characterize the structural evolution of nanocrystalline Ga₂O₃ samples prepared by sol-gel and ball-milling techniques. ²⁹Si and ²⁷Al MAS NMR have also been used to characterize silica and alumina Zener pinning phases. ⁷¹Ga NMR parameters are reported for the α- and β-Ga₂O₃ phases, and more tentatively for the δ-Ga₂O₃ phase. By simulating the octahedrally coordinated gallium NMR line of β-Ga₂O₃ using Gaussian distributions in χ_Q, the extent of disorder in the Ga₂O₃ crystallites has been quantified. The ball-milled samples contain much more inherent disorder than the sol-gel samples in the nano-phase, which was observed from simulations of the ⁷¹Ga MAS NMR spectra. The silica pinning phase produced highly crystalline and densely aggregated nanocrystalline Ga₂O₃, as well as the smallest nanocrystal sizes. Authors' address: Mark E. Smith, Department of Physics, University of Warwick, Coventry CV4 7AL, UK     

Magnetic properties of Co/Pd multilayered films on porous Al<Subscript>2</Subscript>O<Subscript>3</Subscript> templates with developed cell substructure

We studied the structure and magnetic properties of porous multilayered Co/Pd films deposited on the templates of anodized Al₂O₃ with a specific surface morphology that is characterized by a cellular–porous structure with several pores inside each cell. X-ray diffraction analysis and reflectometry are used to study the peculiarities of the formation of phases in deposited films. The effect of morphological features of porous Co/Pd films on their magnetoanisotropic properties and magnetization reversal processes (magnetization reversal mechanisms, domain structure of films, and coercive field H _c ) is revealed by SQUID magnetometry and magnetic force microscopy.     

An investigation into ultra-thin pseudobinary oxide (TiO<Subscript>2</Subscript>)<Subscript>x</Subscript>(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>1-x</Subscript> films as high-<Emphasis Type="Italic">k</Emphasis> gate dielectrics

As potential gate dielectric materials, pseudobinary oxide (TiO₂)_x(Al₂O₃)_1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 °C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO₂ and Al₂O₃. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO₂)_0.4(Al₂O₃)_0.6 film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications. PACS 77.55.+f; 73.40.Qv; 81.15.Fg     

Magnetic State of Iron Impurity Ions in In<Subscript>2</Subscript>O<Subscript>3</Subscript>

X-ray photoelectron spectroscopy and electronic structure calculations in the framework of the coherent potential approach show that impurity Fe³⁺ ions substituting In in iron-doped In₂O₃ indium oxide(III) are in a paramagnetic state in the absence of oxygen vacancies.