Investigation of luminescence spectra of the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> and Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single-crystal films

The luminescence spectra of single-crystal films and bulk crystals of yttrium-aluminum garnet Y₃Al₅O₁₂ and Ce³⁺-activated Y₃Al₅O₁₂ were investigated. It was shown that the room-temperature luminescence intensity of the Ce³⁺-free single-crystal Y₃Al₅O₁₂ film was considerably lower than that of the bulk crystals, while the luminescence intensity of the Ce³⁺ ions in the Y₃Al₅O₁₂:Ce films was considerably higher than that one for the corresponding bulk crystal.     

Luminescence of excitons and antisite defects in Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce³⁺ ion) in phosphors based on Lu₃Al₅O₁₂:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the Lu _Al ³⁺ type and vacancy-type defects. The luminescence band with λ_max = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λ_max = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λ_max = 253.5 nm occurs predominantly near Lu _Al ³⁺ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λ_max = 325 nm (τ = 540 ns), which is excited in the band with λ_max = 175 nm, is due to the radiative recombination of electrons with holes localized near Lu _Al ³⁺ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce³⁺ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce³⁺ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce³⁺ ions with λ_max = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce³⁺ ions is significantly smaller due to a low concentration of these types of defects.     

Location of the energy levels of the rare-earth ions in BaF<Subscript>2</Subscript> and CdF<Subscript>2</Subscript>

The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF₂ and CdF₂ crystals is determined. The role of RE ³⁺ and RE ²⁺ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF₂: RE and CdF₂: RE is associated with the location of the excited energy levels in the band diagram of the crystals.     

Luminescence and electronic excitations in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>: Ce<Superscript>3+</Superscript> crystals

This paper reports on a study of the luminescence emitted by Li₆Gd(BO₃)₃: Ce³⁺ crystals under selective photoexcitation to lower excited states of the host ion Gd³⁺ and impurity ion Ce³⁺ within the 100–500-K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10–15-fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd³⁺ ions and vibrational energy relaxation between the ⁶ I _j and ⁶ P _j levels. It has been shown that radiative transitions in Ce³⁺ ions from the lower excited state 5d ¹ to ² F _5/2 and ² F _7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Luminescence and thermally stimulated recombination processes in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>:Ce<Superscript>3+</Superscript> crystals

The luminescence and thermally stimulated recombination processes in lithium borate crystals Li₆Gd(BO₃)₃ and Li₆Gd(BO₃)₃:Ce have been studied. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence), temperature dependences of the intensity of steady-state X-ray luminescence (XL), and thermally stimulated luminescence (TSL) spectra of these compounds have been investigated in the temperature range of 90–500 K. The intrinsic-luminescence 312-nm band, which is due to the ⁶ P _J → ⁸ S _7/2 transitions in Gd³⁺ matrix ions, dominates in the X-ray luminescence spectra of these crystals; in addition, there is a wide complex band at 400–420 nm, which is due to the d → f transitions in Ce³⁺ impurity ions. It is found that the steady-state XL intensity in these bands increases several times upon heating from 100 to 400 K. The possible mechanisms of the observed temperature dependence of the steady-state XL intensity and their correlation with the features of electronic-excitation energy transfer in these crystals are discussed. The main complex TSL peak at 110–160 K and a number of minor peaks, whose composition and structure depend on the crystal type, have been found in all crystals studied. The nature of the shallow traps that are responsible for TSL at temperatures below room temperature and their relation with defects in the lithium cation sublattice are discussed.     

Luminescence properties of phosphors based on Tb<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> (TbAG) terbium-aluminum garnet

The processes of excitation energy transfer in phosphors based on single-crystal Tb₃Al₅O₁₂:Ce (TbAG:Ce) and Tb₃Al₅O₁₂:Ce,Eu (TbAG:Ce,Eu) garnet films have been investigated. These films are considered to be promising materials for screens for X-ray images and luminescence converters of blue LED radiation. The conditions for excitation energy transfer from the matrix (Tb³⁺ cations) to Ce³⁺ and Eu³⁺ ions in TbAG:Ce and TbAG:Ce,Eu phosphors have been analyzed in detail. It is established that a cascade process of excitation energy transfer from Tb³⁺ ions to Ce³⁺ and Eu³⁺ ions and from Ce³⁺ ions to Eu³⁺ ions is implemented in TbAG:Ce,Eu via dipole-dipole interaction and through the Tb³⁺ cation sublattice.     

Comparative spectroscopic and laser properties of Yb<Superscript>3+</Superscript>-doped CaF<Subscript>2</Subscript>, SrF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> single crystals

We present the spectroscopic properties and room-temperature cw tunable laser operation of Yb³⁺-doped CaF₂, SrF₂ and BaF₂ single crystals grown and studied in the same conditions. Emission cross sections, lifetimes, laser thresholds, laser slope efficiencies and laser wavelength tuning ranges are compared. It appears that Yb³⁺-doped BaF₂ might be more promising for diode-pumped high power laser operation. PACS 42.55.Rz; 42.70.Hj     

VUV luminescence of Er<Superscript>3+</Superscript> ions in LiYF<Subscript>4</Subscript> and BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals

Vacuum ultraviolet luminescence of Er³⁺ ions in LiYF4 and BaY₂F₈ crystals has been investigated. It is revealed that under excitation by 193 nm radiation from an ArF excimer laser the interconfigurational 5d–4f radiative transitions in Er³⁺ ions are observed. It is shown that from the LiYF₄:Er crystal only the spin-forbidden luminescence (λ = 165 nm) is detected, whereas both the spin-forbidden (λ = 169 nm) and spin-allowed (λ = 160.5 nm) components are observed from the BaY₂F₈:Er crystal.     

Energy levels of rare-earth ions in Gd<Subscript>2</Subscript>O<Subscript>2</Subscript>S

The energies of the ground 4f ⁿ levels of tri- and divalent rare-earth ions with respect to the conduction and valence bands of Gd₂O₂S crystal has been determined. It is shown that the Pr³⁺, Tb³⁺, and Eu³⁺ ions can be luminescence centers in Gd₂O₂S. The levels of the Nd³⁺, Dy³⁺, Er³⁺, Tm³⁺, Sm³⁺, and Ho³⁺ ions lie in the valence band; therefore, these ions cannot play the role of activators. The ground 4f level of the Ce³⁺ ion is near the midgap, due to which Ce³⁺ effectively captures holes from the valence band and electrons from the conduction band and significantly decreases the afterglow level of the Gd₂O₂S:Pr and Gd₂O₂S:Tb phosphors.     

Cooperative down-conversion of UV light in disordered scheelitelike Yb-doped NaGd(MoO<Subscript>4</Subscript>)<Subscript>2</Subscript> and NaLa(MoO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystals

Concentration series of disordered scheelitelike Yb:NaGd(MoO₄)₂ and Yb:NaLa(MoO₄)₂ single crystals are grown by the Czochralski method. The actual concentrations of Yb³⁺ ions in the crystals are determined by optical-absorption spectroscopy. The luminescence of Yb³⁺ ions in these crystals in the region of 1 μm is studied under UV and IR excitation. In the case of UV excitation, this luminescence appears as a result of nonradiative excited state energy transfer from donor centers of unknown nature to ytterbium. The character of the concentration dependence of Yb³⁺ luminescence indicates that the energy transfer at high Yb concentrations occurs with active participation of a cooperative mechanism, according to which the excitation energy of one donor center is transferred simultaneously to two Yb³⁺ ions. In other words, the quantum yield of this transfer exceeds unity, which can be used to increase the efficiency of crystalline silicon (c-Si) solar cells.     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

EPR study of impurity iron ion clusters in BaF<Subscript>2</Subscript> crystals

Tetragonal paramagnetic centers with spin S = 7/2 were detected in x-ray-irradiated BaF₂: Fe (c_Fe ≈ 0.002 at. %) crystals using the EPR method. Electronic transitions between the |±1/2〉 states of a Kramers doublet were observed in the X and Q ranges. In the EPR spectra of the tetragonal centers, a ligand hyperfine structure (LHFS) was observed corresponding to the interaction of the electron magnetic moment of the tetragonal center with eight equivalent ligands. The large spin moment, significant anisotropy of the magnetic properties, and the characteristic LHFS indicate that the tetragonal center is a Fe^1.5+?Fe^1.5+ dimer in which the two iron ions are bound via superexchange interaction. It is assumed that, before crystal irradiation, this dimer was in the Fe³⁺(3d⁵)?Fe⁺(3d⁷) state.     

Spectral properties of Nd<Superscript>3+</Superscript> ions in samples of transparent Y<Subscript>2</Subscript>O<Subscript>3</Subscript> ceramics

The spectral and luminescent characteristics of samples of Y₂O₃:Nd³⁺ ceramics obtained from different precursors under different preparation conditions (the concentration of an HfO₂ compacting additive, the temperature and time of synthesis) are studied at 300 and 77 K. It is shown that the spectral positions of absorption and luminescence lines of ceramics correspond to those of a Y₂O₃:Nd³⁺ single crystal. At the same time, the absorption and luminescence spectra show an inhomogeneous broadening, characteristic of disordered crystals and glass. The energies of the ⁴ I _9/2 and ⁴ F _3/2 Stark states of the Nd³⁺ ion are calculated. The calculation results nearly coincide with the data from the literature for the Y₂O₃:Nd³⁺ single crystal and transparent ceramics. Samples containing the compacting additive show additional lines, whose intensities correlate with its concentration and the method of preparation of Y₂O₃:Nd³⁺ ultradispersed powders. It is assumed that these lines are related to the fact that either Nd³⁺ ions enter the composition of the HfO₂ compacting additive or Hf⁴⁺ ions are present in the nearest environment of Nd³⁺ ions at the boundaries of granules enriched with HfO₂.     

Exciton and intracenter luminescence in Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Exciton luminescence and intracenter luminescence (IL) of Mn²⁺ ions in Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te structures with quantum wells (QWs) 7, 13, and 26 monolayers thick were studied. It was established that in QWs the intensity of exciton luminescence with respect to that of IL is a few orders of magnitude higher than that in bulk crystals. The spectral position of manganese IL profile changes noticeably in going from a bulk crystal to a QW of the same composition. The nonexponential parts of the IL decay curves are determined by excitation migration and the cooperative upconversion process, whose contribution is high under strong excitation and efficient migration. At 77 K, the IL decay constant τ within the exponential region increases with decreasing QW thickness. The decay constant τ in a QW, unlike in a bulk Cd_0.5Mn_0.5Te crystal, decreases substantially under cooling from 77 to 4 K.     

Optical properties of Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Emission spectra of three Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te superlattices with Cd_0.6Mn_0.4Te quantum-well (QW) widths of 7, 13, and 26 monolayers, respectively, and the same thickness (46 monolayers) of the Cd_0.5Mg_0.5Te barriers have been studied. The QW width affects the shape and spectral position of the Mn²⁺ intracenter luminescence (IL) band as a result of the crystal field being dependent on the position of the manganese ion with respect to the interface. Measured in identical experimental conditions, the exciton luminescence as compared to the IL is substantially higher in intensity in a QW than in a bulk CdMnTe crystal. Some samples of superlattices and bulk crystals exhibit, in addition to the conventional IL band near 2.0 eV, a weaker band at about 1.45 eV. This band apparently derives from intracenter transitions in the Mn²⁺ ions in the regions where the crystal lattice has the rock-salt rather than the conventional zinc blende structure.     

铈离子掺杂浓度对氯化镧(LaCl_3:Ce)闪烁晶体发光性能的影响

本文采用垂直Bridgman法,分别生长了未掺杂LaCl3和掺有不同浓度CeCl3的LaCl3闪烁晶体,并对它们的透光性质、发光性质和光衰减特性进行了测试和对比分析.发现未掺杂LaCl3晶体的吸收边位于215 nm附近,本征发射峰为405 nm,衰减时间在1μs以上.该发光属于纯氯化镧晶体的自陷激子发射,但随着CeCl3掺杂浓度的提高,源于自陷激子(STE)的本征发射强度逐渐降低,LaCl3:Ce晶体中的吸收边逐渐红移至300nm,由Ce3+中心所产生的5d→4f发射逐渐增强,其衰减时间加快至～20 ns.这种现象被解释为LaCl3晶格中的自陷激子向Ce3+离子发光中心的能量传递作用所致.     

Nonlinear rotation of the polarization of the intense femtosecond laser radiation in BaF<Subscript>2</Subscript>

The dependence of the polarization plane rotation angle in the BaF₂ crystal on the intensity of the femtosecond laser radiation with 0.62 μm wavelength in the ω = ω + ω ? ω process on cubical nonlinearity χ⁽³⁾ is investigated. An anomalous increase in the efficiency of the cross-polarized radiation generation at I > 2 × 10¹² W cm² is observed for the first time. The 10% efficiency of the orthogonal component generation at the ～3 × 10¹² W cm² intensity is obtained.     

Determination of the charge state of chromium in Cr:Bi<Subscript>12</Subscript>GeO<Subscript>20</Subscript> single crystals by spectral luminescence methods

The valence state and structural localization of Cr ions in Cr:Bi₁₂GeO₂₀ single crystals grown by the Czochralski method in air and annealed in argon or UV-irradiated have been determined in the spectral luminescence study. It is established that chromium is in the state of tetrahedrally coordinated Cr⁴⁺ ions in the samples studied. Octahedrally coordinated Cr²⁺ and Cr³⁺ ions and tetrahedrally coordinated Cr⁵⁺ ions were not revealed.