An efficient Schottky-varactor frequency multiplier at millimeter waves. Part I: Doubler

The efficiency of millimeter wave doublers with a wide tunable bandwidth was studied. The efficiency depends on the varactor parameters and the embedding impedances seen by the diode at fundamental and harmonic frequencies. Millimeter wave doublers were simulated with a nonlinear analysis program to find optimum embedding impedances for a given diode. Also the sensitivity of the efficiency to various diode and circuit parameters was evaluated. A scaled model was constructed in order to experimentally optimize the impedances. For experimental verification a doubler from 40–58 GHz to 80–116 GHz was constructed. The highest efficiency measured was 45% at 94 GHz with 5 mW input power. The highest efficiency obtained with 20 mW input power was 38%.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part III. Quadrupler

In this research the efficiency of a millimeter-wave Schottky-varactor quadrupler was studied. Theoretical simulations were carried out by using a nonlinear analysis program to find the optimum embedding impedances for a given diode. Emphasis was placed on the study of optimum idlers at the 2nd and 3rd harmonics, which are essential for a high quadrupling efficiency. For experimental verification a quadrupler for 140–155 GHz output frequency range with fixed idler terminations was constructed. This quadrupler was tested with different output configurations. A 10% tunable bandwidth was obtained with output power in the range of 1.5–2.7 mW whenP _in =40 mW. The highest efficiency measured was 11.3% at 148 GHz with 10 mW input power.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part IV. Quintupler

The multiplication efficiency of a millimeter-wave Schottky-varactor quintupler with fixed idler terminations was studied. The highest efficiency measured was 4.2% at 168 GHz with 10 mW input power and 3.3% with 40 mW input power. Over the range from 165 GHz to 170 GHz the output power was 0.7–1.3 mW withp _in =40 mW.     

基于CSMRC结构和容性肖特基二极管的220GHz三倍频器

设计了基于容性肖特基二极管的220 GHz非平衡三倍频器。首先对容性肖特基二极管进行测试和关键参数提取,建立了肖特基二极管的等效电路模型,以此为基础进行三倍频电路设计;在倍频电路设计中通过引入紧凑悬置微带谐振单元(CSMRC)滤波结构来减小信号传输损耗;由于三倍频电路设计中难以实现全波阻抗匹配,因此采用了整体电路结构谐波平衡调匹配方法设计倍频电路,最后对制备出的倍频器进行测试和分析;实验测试结果表明:倍频器在213.1~221.6 GHz范围内输出功率大于10 mW,倍频效率大于5%,最高输出功率为18.7 mW@218.6 GHz,最高倍频效率为8.24%@217.9 GHz。     

A frequency doubler for 200 GHz with a planar Schottky varactor

A frequency doubler for 200 GHz utilising a planar surface channel Schottky varactor was designed, constructed and tested. The doubler employes novel split-waveguide mount design with two sliding backshorts at both input and output waveguides. The theoretical maximum efficiency of the doubler is 44.0 % with input power level of 32 mW and the maximum output power is 16.5 mW with input power level of 50 mW. The measured maximum efficiency of the doubler was 7.1 % and the maximum output power was 2.6 mW     

Reflectivity Characteristics of Resonant Four Wave Mixing Generated in Erbium-Doped Optical Fibers

Resonant four-wave mixing (RFWM) based on the photo-induced refractive index change in erbium-doped optical fibers is demonstrated experimentally. The erbium-doped fibers act as a saturable absorber at 1.536 μm pump wavelength. Dependence of efficiency of RFWM on the pump power, the dopant concentration, the fiber length, and the signal modulation frequency are analyzed using three types of erbium-doped fibers differing in dopant concentration. It is found that a signal modulation frequency higher than 10 kHz is required for the correct measurement. The RFWM efficiency is improved with an increase in the input pump power in a range up to 1.5 mW and the highest reflectivity of 5.1% is attained. The highest RFWM efficiency is achieved at αgsL ∼ 5 dB, which is in good agreement with the theory.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology

In this Paper, we present a fully integrated millimeter wave LC voltage-controlled oscillator (VCO), which employs a novel topology, operating at dual-band frequency of 53.22 GHz-band and 106.44 GHz-band. The low-phase noise performance of –107.3 dBc/Hz and –106.1 dBc/Hz at the offset frequency of 600 kHz, –111.8 dBc/Hz and –110.6 dBc/Hz at the offset frequency of 1 MHz around 53.22 GHz and 106.44 GHz are achieved using IBM BiCMOS-6HP technology, respectively. Two tuning ranges, of 52.7 - 53.8 GHz and 105.4 - 107.6 GHz for the proposed LC VCO are obtained. The output voltage swing of this VCO is around 1.8 V_p-p at the operation frequency of 53.22 GHz and 0.45 V_p-p at 106.44 GHz; the total power consumption is about 16.5 mW. To our knowledge, this is the first oscillator which operates at dual-band frequency above 50 GHz with the best preformance.     

Q-switched NYAB laser end-pumped by a high-power diode-laser array

A diode-laser array end-pumped acousto-optically Q-switched NYAB laser operating at both 1.06 and 0.53 μm has been demonstrated. An average output power of 1.3 W at 1.06 μm at a pulse repetition frequency (PRF) of 60 kHz was obtained with an optical conversion efficiency of 18.1% and a slope efficiency of 21.3%. At the incident pump power of 6.1 W, the 1.06 μm shortest laser pulse was reached at PRF of 20 kHz with FWHM width measured to be 32 ns, yielding a largest pulse energy of 30 μJ, and a highest peak power of 938 W. The attainable maximum average green power was found to be 185 mW, with an optical conversion efficiency of 3%.     

Phase Locking of 2-mm Wave Sources Upon High-Order IMPATT Multipliers

We describe experiments resulting in the phase locking of two electrically tunable 2-mm wave sources based on active high-order IMPATT multipliers. Phase locking modes were tested on a pair of identical multiplying sources (master and slave) with the tuning ranges 138.5+/–1.5 GHz (master) and 140.0+/– GHz (slave). The phase lock loop (PLL) system is used to lock the slave source to the master source. The multipliers of this type can translate the spectra of highly stable centimeter-wave oscillators to any part of the millimeter range with the output power 100÷20 mW over the 30 to 140 GHz range without additional amplification. The phase locked sources operate over a 3% frequency band with low phase noise and rapid frequency tuning. The amplitude-frequency characteristics of the sources are presented with the locking-mode signal spectra.     

Output optimization of a high-repetition-rate diode-pumped Q-switched intracavity optical parametric oscillator at 1.57 μm

The output optimization of a high-repetition-rate diode-pumped Q-switched intracavity optical parametric oscillator at 1573 nm with a type-II non-critically phase-matched x-cut KTP is experimentally and theoretically studied. The optimum output reflectivity is found to be 85–90% for the maximum average power. The average conversion efficiency from diode-laser input power to OPO signal output power is up to 15% at a pulse repetition of 80 kHz. However, the optimum output reflectivity for the maximum peak power is found to be 60–70%; the overall peak power amounts to 3–4 kW at a pulse repetition of 80 kHz. PACS 42.60.Gd;42.65.Yj;42.55.Xi     

Design of W-Band Tripler

This paper describes a high performance W-band tripler with a novel structure. Input frequency is 25-36.7 GHz, output frequency 75-110 GHz, input power is 20dBm and conversion loss 16 dB. It can extend microwave signal to W-band (adding in Ka-band doubler). In the design, we give some approaches to achieve high band performances.     

Output characteristics of a cataphoresis He–Sr recombination laser

A cataphoresis discharge tube of 7 mm inner diameter and 38 cm active length was designed and made for the He–Sr⁺ laser. The cataphoretic input of uniform distribution of strontium vapor concentrations along the active region was realized by the cataphoresis effect and the slow flowing (0.5 nl/h) of helium buffer gas. The strontium ionic recombination laser at 430.5 nm and the R–M transition laser at 1.03 μm were obtained with the modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The laser components are concentrated on the 430.5 nm wavelength. Dependences of working parameters such as the pulse frequency, the supply voltage, and the helium pressure on laser output characteristics were measured and discussed. The maximum laser output power of 819 mW and specific power of 56 mW/cm³ were obtained, respectively.     

Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode

Efficient second-harmonic power extraction was demonstrated recently with GaAs tunnel injection transit-time (TUNNETT) diodes up to 235 GHz and with InP Gunn devices up to 325 GHz. This paper discusses the latest theoretical and experimental results from second-harmonic power extraction at submillimeter-wave frequencies and explores the potential of using power extraction at higher harmonic frequencies to generate continuous-wave radiation with significant power levels at frequencies above 325 GHz. Initial experimental results include output power levels of more than 50 W at 356 GHz from a GaAs TUNNETT diode in a third-harmonic mode and at least 0.2–5 W in the frequency range 400–560 GHz from InP Gunn devices in a third or higher harmonic mode. The spectral output of these submillimeter-wave sources was analyzed with a simple Fourier-transform terahertz spectrometer and, up to 426 GHz, with a spectrum analyzer and appropriate harmonic mixers. Initial experimental results from a GaAs/AlAs superlattice electronic device at D-band (110–170 GHz) and J-band (170–325 GHz) frequencies are also included.     

Passive Q-switching at 1.54 μm of an Er–Yb: GdCa4O(BO3)3 laser with a Co2+: MgAl2O4 saturable absorber

We report, for the first time to our knowledge, efficient passive Q-switching of the 1.54-μm laser transition in an Er–Yb-doped crystalline medium. The laser configuration is a compact microchip design that is suitable for a range of practical applications such as range finding and lidar. The slope efficiency of 11.6%, pulse duration of 5–6 ns and average output power of 88 mW are all comparable with standard Er–Yb:glass lasers.     

A simple extended cavity diode laser for spectroscopy around 640 nm

We report on an extended cavity diode laser for operation near 640 nm. The laser is continuously tunable in 10 GHz ranges with a maximum output power of 3 mW. The laser system has been constructed using off-the-shelf optoelectronic components and easily machinable mechanical parts. The constructed system has been used to study the saturated absorption of the closed 1s₅–2p₉ neon transition in a radio-frequency discharge that can be maintained at neon pressures down to 10⁻² Pa.     

Improved analysis for SRS- and XPM-induced crosstalk in SCM-WDM transmission link in the presence of HOD

In this paper, the improved analysis for SRS- and XPM-induced crosstalk has been reported. The modified expression for XPM-induced crosstalk has been obtained and SRS- and XPM-induced crosstalks have been reported at varied walkoff parameter, modulation frequency, input optical power and transmission distance. It has been observed that there is exponent decrease in SRS-induced crosstalk with the increase in modulation frequency from 0 to 2.0 GHz. It varies with the increase in length and lie in the range of (−114 to −122.4) dB and (−115.5 to −124.4) dB at 20 and 100 km, respectively. Moreover, it increases exponentially with the increase in input optical power and lies in the range of (−121.6 to −130.6) dB at 10 mW and grows exponentially up to the range of (−114 to −122.8) dB at 60 mW optical powers at walkoff parameter of (13.6, 27.2, 54.4 and 81.6) ps/km. It has been observed that the XPM-induced crosstalk increases exponentially with the increase in transmission distance and modulation frequency for 2OD and 3OD. Furthermore, it has been found that the total SRS- and XPM-induced crosstalk rises exponentially with fluctuations with the increase in modulation frequency and transmission length in the presence of combined effect of 2OD and 3OD at varied walkoff parameters.     

Efficient frequency upconversion of coherent radiation from 10.26 to 1.187 μm in a GaSe crystal

Frequency upconversion of laser pulses at 10.26 μm to those at 1.187 μm was achieved in the presence of Nd:YAG laser pulses based on difference-frequency generation in a 10 mm-long GaSe crystal. The highest power conversion efficiency for the parametric conversion was determined to be 20.9%, corresponding to the photon conversion efficiency of 2.42%. This value is two orders of magnitude higher than the highest value reported on GaSe in the literature. The saturation of the output power at 1.187 μm as the input power at 10.26 μm was increased, due to the back conversion, i.e. 1.187 μm + 10.26 μm → 1.064 μm, was clearly evidenced. Such a parametric process has potential for achieving sensitive detections of mid-infrared radiation.