低维半导体异质结中的量子相干红外发射机理理论研究

给出了一种在非粒子反转条件下量子阱和量子点激光器的红外发射机理.此种红外发射是基于在同一作用区产生并作为红外场相干源的两种带间跃迁激光场的共振非线性混合.这种频率下转换机理并不依赖于在半导体激活媒质中的长时相干假定条件,在室温和泵注入电流条件下仍然有效.频率下转换的固有效率可以达到相当于每个可见光子产生一个红外光子的量子极限值.根据红外发射的可参变特性,这种非粒子反转的方法尤其适用于长波红外工作范围.     

半导体带间级联激光器研究进展

半导体带间级联量子阱是实现3~5μm波段中红外激光器的重要前沿,其在半导体光电器件技术、气体检测、医学医疗以及自由空间光通信等诸多领域具有重要科学意义和应用价值。半导体带间级联量子阱发光机理是以二类量子阱中的电子与空穴的带间辐射复合发光为主导,再通过电子注入区与空穴注入区形成级联放大,实现多个量子阱周期内电子与空穴的重复利用。本文综述了半导体带间级联激光器从提出能带结构、外延材料到器件制备技术的发展历程,剖析了器件结构各功能区基本概念和工作原理,介绍了器件结构设计与制备工艺技术难点的里程碑突破,详细解释了载流子再平衡、分别限制层等设计,最后展望了半导体带间级联激光器的发展方向和趋势。     

相干长度可连续调谐的半导体激光器

实验利用光反馈的方法获得了相干长度连续可调的半导体激光光源.通过调节反馈强度及抽运电流,有效控制了光反馈半导体激光器的相干长度.其相干长度可由无反馈时的几米连续调至100 μm.同时,利用光反馈半导体激光器速率方程,数值模拟了反馈强度及抽运电流对半导体激光器相干长度的影响.实验及数值模拟均表明：通过调节反馈强度的大小可以有效控制半导体激光器的相干长度,光反馈半导体激光器的相干长度随反馈强度的增大而减小,而偏置电流对相干长度无明显影响.模拟结果与实验结果符合. 关键词： 光反馈半导体激光器 相干长度 反馈 混沌     

Tuning a conventional quantum well laser by nonresonant laser field dressing of the active layer

Tunable semiconductor lasers may be considered as a critical technology for optical communications. We investigate the theoretical feasibility of tuning a conventional GaAs/Al_0.2Ga_0.8As quantum well laser emitting at 825 nm by non-resonant laser-dressing of the active layer. Conduction and valence subbands are sensitive to the intense dressing field and this effect can be used to blueshift the active interband transition. The laser-dressed electron and hole states are calculated in the effective mass approximation by using the finite difference method. Emitted wavelength, threshold current and characteristic temperature are discussed as functions of the dressing laser parameter and cavity length.     

半导体激光器混沌输出的延时特征和带宽

外腔延时特征和带宽是影响混沌激光应用的两个重要参量.本文将一个单路光反馈的半导体激光器输出的激光部分地注入到另一个双路滤波光反馈的半导体激光器中,从而构成一个具有外光注入的双路滤波光反馈半导体激光器系统,即主从激光器系统,用于抑制混沌激光的延时特征并研究其带宽.数值研究了外光注入系数、反馈强度、抽运因子和滤波器带宽对系统输出混沌激光的延时特征的影响,然后将该系统对延时特征的抑制效果和具有外光注入的单路光反馈半导体激光器系统、具有外光注入的双路光反馈半导体激光器系统、具有外光注入的单路滤波光反馈半导体激光器系统以及无光注入双路滤波光反馈半导体激光器系统进行对比和分析,结果表明本文提出的方案对延时特征的抑制效果最好.然后在本文提出的具有外光注入的双路滤波光反馈半导体激光器系统中,延时特征被有效抑制的参数条件下研究系统输出混沌激光的带宽,结果表明,通过适当选择参数的取值,本文提出的方案可以提高系统输出混沌激光的带宽.     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

链式互耦合半导体激光器的实时混沌同步

通过在互耦合外腔半导体激光器之间增加中继激光器,建立了一种链式互耦合半导体激光器混沌同步系统模型.理论分析了系统的实时混沌同步条件,数值研究了注入电流、互耦合条件、反馈条件等对系统实时混沌同步品质的影响,揭示了同步质量在反馈强度和互耦合强度二维参数空间的分布规律.结果表明:注入电流较大时,满足互耦合强度和反馈强度相同,互耦合延时和反馈延时相等,系统中所有激光器之间可同时实现稳定高品质实时混沌同步;中心激光器和边激光器之间的稳定实时混沌同步分布在在互耦合强度和反馈强度较小的区域以及互耦合强度和反馈强度相近的区域;边激光器之间由于同时接收到中心激光器实施的相同注入,能够较容易的实现稳定高品质的实时混沌同步.该系统可进一步扩展成为实现远距离的双向实时混沌同步或阵列激光器系统的实时混沌同步.     

Interband coherence induced correction to Thouless pumping: possible observation in cold-atom systems

In Thouless pump, the charge transport in a one-dimensional insulator over an adiabatic cycle is topologically quantized. For nonequilibrium initial states, however, interband coherence will induce a previously unknown contribution to Thouless pumping. Though not geometric in nature, this contribution is independent of the time scale of the pumping protocol. In this work, we perform a detailed analysis of our previous finding [H.L. Wang et al., Phys. Rev. B 91, 085420 (2015)] in an already available cold-atom setup. We show that initial states with interband coherence can be obtained via a quench of the system’s Hamiltonian. Adiabatic pumping in the post-quench system are then examined both theoretically and numerically, in which the interband coherence is shown to play an important role and can hence be observed experimentally. By choosing adiabatic protocols with different switching-on rates, we also show that the contribution of interband coherence to adiabatic pumping can be tuned. It is further proposed that the interband coherence induced correction to Thouless pumping may be useful in capturing a topological phase transition point. All our results have direct experimental interests.     

Theoretical analysis of optical pulse position modulation communication systems using semiconductor lasers

In this paper the performance of a pulse position modulation (PPM) optical system is analysed both for direct and coherent detection schemes taking into account time jitter of the semiconductor laser. This phenomenon can introduce a large sensitivity penalty if the system parameters are not accurately selected. In particular, the optimum value of the PPM order is strongly influenced by the laser time jitter, and the modulation index cannot be chosen below a threshold value that, with the assumed laser parameters, is about 0.7.     

Equilibrium circular photogalvanic effect in a hybrid superconductor-semiconductor system

A dc electric current can be induced in a hybrid semiconductor-superconductor system under illumination of it by a circularly polarized light with the frequency below the energy of semiconductor interband transitions. In conditions when the light beam is unable to create real electron-hole excitations, this phenomenon is reminiscent of the Meissner effect in the static magnetic field. Such an effect can be employed in systems combining cavity photons and superconducting quantum circuits.     

Relaxation Oscillation Enhancement and Coherence Collapse in Semiconductor Lasers with Optical Feedback

The dynamic characteristics of a semiconductor laser with optical feedback are strongly dependent on the injection current and the reflectivity and position of the external feedback reflector. We investigated the relaxation oscillation enhancement and coherence collapse state of the laser oscillation based on the laser rate equations. It is well known that laser output power jumps with increase of the injection current due to external mode transition. But here for the first we time demonstrate the existence of a chaotic scenario within successive laser power jumps. The results calculated by numerical simulations based on the rate equations are compared with those of the experiments and good coincidence between them is found.     

Microscopic analysis of the coherent optical generation and the decay of charge and spin currents in semiconductor heterostructures

The coherent optical injection and temporal decay of spin and charge currents in semiconductor heterostructures is described microscopically, including excitonic effects, many-body Coulomb correlations, and the carrier LO-phonon coupling on the second-order Born-Markov level, as well as nonperturbative light-field-induced intraband and interband excitations. A nonmonotonic dependence of the currents on the intensities of the laser beams is predicted. Enhanced damping of the spin current relative to the charge current is obtained as a consequence of Coulomb scattering.     

Single-mode operation of a laser-diode array with frequency-selective phase-conjugate feedback

A new technique for single-mode operation of laser-diode arrays is presented. A gain-guided GaAlAs laser diode array is coupled to an external frequency-selective phase-conjugate feedback system that contains a photorefractive barium titanate crystal, a Fabry-Perot etalon, and a spatial filter. The etalon is the key component, and it forces the array, which has low spatial and spectral coherence when it runs freely, to oscillate in a single spatial and a single longitudinal mode. At a drive current of two times the threshold current, the far-field pattern is reduced to only 1.4 times the diffraction limit, the spectral bandwidth is less than 0.02 nm, and the coherence length is increased by a factor of 70. The technique has general validity and can be applied to various other multimode laser systems.     

用半导体环形激光器产生混沌信号

提出了一种由一个分布式反馈激光器为主激光器和一个半导体环形激光器为从激光器组成的主从式激光混沌系统方案,主激光器产生的光单向注入到从激光器中,通过调整注入系数、主从激光器的失谐频率和从激光器的偏置电流,使从激光器工作在混沌状态,输出混沌信号。从基于光注入条件下的环形激光器的速率方程组入手,数值模拟了主从激光器的失谐频率、注入系数和从激光器的偏置电流3个工作参量对从激光器输出动态的影响。研究表明:外光注入条件下,半导体环形激光器可以产生混沌信号。通过分析得出:当失谐频率为3.9 GHz、注入系数为0.07、偏置电流为81 mA时,环形激光器可以产生功率谱平坦、带宽较宽的高质量混沌信号。     

Switching of a Semiconductor Laser with Multi-Detuned Optical Inputs by Controlling Injection Current

The multistability of a Fabry-Perot semiconductor diode laser for an injection current is presented when multi-optical inputs detuned from the cavity-resonant wavelength of a semiconductor laser are injected. m+1 Multi-stable states are shown to be produced in the optical output versus injection current characteristics for m detuned optical inputs. It is shown that optical output can be switched in any one of the optical input wavelengths in a relatively fast response time by applying injection current pulses. Analytical expression based on linear stability analysis is presented to predict the switching time to free oscillating mode, and larger optical input power and detuning are effective to shorten the switching time. The results here are believed to be useful to extend wavelength switching to a scope of electronic manipulation without modulation of optical inputs and can be applicable to actual devices.     

Instantaneous frequency measurement applied to semiconductor laser relaxation oscillations

The frequency of relaxation oscillations in the output power of lasers, particularly semiconductor lasers, is an important parameter which can be used to inform other fundamental laser variables, for comparison with expected theory, and to show the effect of external influences, such as optical feedback, by a change in value. Thus, precision measurement of the relaxation frequency is important. Instantaneous frequency measurement algorithms are applied to experimental semiconductor laser relaxation-oscillation signals to determine whether reliable values can be extracted, for an extended range of injection current, as compared to direct measurement and fast Fourier transform techniques. Improvement is achieved but, more importantly, the technique clearly shows when other oscillations, such as those due to packaging, connectorization and power supply, dominate the oscillatory component of the output power, at low injection currents. The work further supports the finding that only mid-range injection currents can be used for reliable precision relaxation oscillation frequency measurement.     

可调谐半导体激光器的瞬时光谱测量方法研究

可调谐半导体激光器在调谐过程中的瞬时光谱特性,如瞬时的波长、调谐率、功率、线型和线宽等参数影响着以激光器为光源的光学测量和光相干通信系统的精度。然而,能够同时测量这些瞬变参数的技术至今未见报道。提出了一个基于时频分析的测量半导体激光器在调谐过程中瞬时光谱参数的方法,利用一个短时延外差测量系统,利用激光器瞬时光谱参数与差拍信号瞬时参数的关系,最终获得了半导体激光器在连续电流调谐过程中的瞬时光谱。测量系统采用了10 cm光程差的Mach-Zehnder干涉仪,调谐电流是幅度为20~120 mA、频率是1 kHz的锯齿波,差拍信号可视为直流信号、载波信号与噪声的叠加,按照短时延相干光测量原理,差拍信号中的直流分量幅度的大小反映了激光器输出光信号的功率;载波信号是一种多项式相位信号,由其频率可以推算激光器输出光谱的中心频率或波长;噪声信号则与激光器输出光谱的线型和线宽相关,通过对噪声信号进行时频分析,可以获知激光器在连续电流调谐过程中每一时刻或每个电流下的瞬时线型、线宽。采用了趋势局部均值分解方法对差拍信号进行了准确分离,并对分离信号分别进行处理,同时获知了半导体激光器在调谐过程中的瞬时输出光功率、光波长、调谐率及线型、线宽。在去掉弛豫部分后截取的整周期差拍信号对应的调谐电流60~115 mA变化范围内,半导体激光器(FRL15DDR0A31-18950, Furukawa)瞬时输出光功率变化范围是5.16~10.6 mW,瞬时光波长变化范围为1 579.2~1 579.6 nm;激光器的瞬时调谐率在0.004 8~0.011 5 nm·mA-1范围内单调变化;线宽是852.55~954.95 kHz,呈非线性随机分布。基于短时延、局部均值分解和时频分析方法的瞬时光谱参数测量系统可以准确得到各瞬时光谱参数,测量结果与激光器的静特性相符,且测量系统结构简单,使我们更深入地理解激光器的工作原理,具有广阔的应用前景。     

Generation of regular femtosecond pulses in AlGaInP semiconductor laser

It is shown experimentally that stable ~ 200 fs regular pulses and optical frequency comb spectrum containing ~ 70 discrete frequencies can be achieved using semiconductor injection laser working in the conditions of superfluorescence under dc pumping current, which is lower than the threshold of laser action.     

Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current.     

光注入提高半导体激光器混沌载波发射机的带宽

外光反馈下的半导体激光器可视为混沌载波发射机.数值研究发现，外部强光注入可以显著提高混沌载波发射机的带宽，带宽提高的程度在一定范围内与注入光的强度成正比.当外部光注入系数k_inj=0.39时，混沌载波的带宽由无光注入时的2.7GHz增大到14.5GHz，提高了5倍多.研究还发现，在相同的注入强度条件下，当注入光的频率比半导体激光器的中心频率高2—4GHz时，可实现最大限度的带宽增强.此外，适当提高半导体激光器的偏置电流也可以在一定程度上提高其产生的混沌载波的带宽. 关键词： 半导体激光器 混沌 带宽