Planarity and stability of shock driven directly by the ninth laser beam from “Shenguang-II" laser facility

Using the ninth laser beam (converted to 2ω) of “Shenguang-II” laser facility and the beam smoothing technology of lens-array [Appl. Opt. 25, 377 (1986); Phys. Plasmas. 9, 3201 (1995)], a shock wave with 700 μm (the root-mean-square of shock breakout time (RMS) RMS ≈ 6.32 ps) flat top was created. An Al-Al four-step target was designed to do research on shock wave stability in an Al target. And the shock stability experiment with the Al-Al four-step target indicated that the shock wave steadily propagated in the Al target of thickness of about 20–45 μm under the power density of ~ 1.0×10¹⁴ W/cm².     

On the technique of absolutization of diffuse scattering intensity measurements based on thermal diffuse scattering measurements

Features of microdefect (MD) formation in GaAs(Si) single crystals grown by horizontally oriented crystallization were studied by X-ray diffuse scattering (XRDS). Measurements were performed at room temperature (∼298 K) and near the liquid nitrogen evaporation temperature (∼85 K) using an open-flow cooling nitrogen cryostat. A practical technique for measuring XRDS using a triple-axis X-ray diffractometer was developed and applied to separate scattering on defects and thermal diffuse scattering. For a crystal with n = 2.0 × 10¹⁸ cm⁻³, the radius of detected nonspherical MDs was determined as ∼0.2 μm; thermal diffuse scattering (TDS) was experimentally separated. For a crystal with n = 3.9 × 10¹⁸ cm⁻³, nonspherical MDs ∼0.5 μm in radius were detected; TDS was found to be a negligible fraction of total XRDS. At the same time, in the case of coinciding crystal orientations and identical experimental conditions, TDS measurement data for one crystal can be used for other GaAs(Si) crystals with the same orientation.     

Observation of the plasma channel dynamics and Coulomb explosion in the interaction of a high-intensity laser pulse with a He gas jet

We report the first interferometric observations of the dynamics of electron-ion cavitation of relativistically self-focused intense 4 TW, 400 fs laser pulse in a He gas jet. The electron density in a channel 1 mm long and 30 μm in diameter drops by a factor of approximately 10 from the maximum value of ∼8×10¹⁹ cm⁻³. A high radial velocity of the plasma expansion, ∼3.8×10⁸ cm/s, corresponding to an ion energy of about 300 keV, is observed. The total energy of fast ions is estimated to be 6% of the laser pulse energy. The high-velocity radial plasma expulsion is explained by a charge separation due to the strong ponderomotive force. This experiment demonstrates a new possibility for direct transmission of a significant portion of the energy of a laser pulse to ions. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 12, 787–792 (25 December 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10⁻¹⁰ W/Hz^1/2. With estimated frequency dependent antenna effective area S_est for contact wires considered as antennas, the estimated possible noise equivalent power NEP_pos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of ν ∼55–78 GHz reaching NEP_pos ≈10⁻¹² W/Hz^1/2.     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

We report the device characteristics of the metal–dielectric high-reflectivity (HR) coated 1.55 μm laterally coupled distributed feedback (DFB) laser with metal surface gratings by using holographic lithography. The HR coating films are composed of Au/Ti/SiO₂. It provides a variety of advantages compared to the uncoated DFB laser on the same processed wafer while there is no degradation on current–voltage characteristics. For 3 μm wide and 300 μm long HR coated DFB laser, it exhibits a maximum output power of ∼17 mW and a threshold current of 14.2 mA at 20°C under continuous-wave mode. It is clear that the threshold current and slope efficiency are improved by 36% and 96%, respectively, due to the reduction of mirror loss. The metal–dielectric HR coating on one facet of DFB laser is found to have significantly increased characteristic temperature (i.e., T ₀∼88 K). Furthermore, the stable single-mode operation with an increased single-mode suppression ratio was achieved.     

Telecom-grade fiber laser-based difference-frequency generation and ppb-level detection of benzene vapor in air around 3 μm

We report on the development of a field deployable compact laser instrument tunable over ∼232 cm⁻¹ from 3.16 to 3.41 μm (2932.5–3164.5 cm⁻¹) for chemical species monitoring at the ppb-level. The laser instrument is based on widely tunable continuous-wave difference-frequency generation (DFG), pumped by two telecom-grade fiber lasers. DFG power of ∼0.3 mW near 3.3 μm with a spectral purity of ∼3.3 MHz was achieved by using moderate pumping powers: 408 mW at 1062 nm and 636 mW at 1570 nm. Spectroscopic performance of the developed DFG-based instrument was evaluated with direct absorption spectra of ethylene at 3.23 μm (∼3094.31 cm⁻¹). Absorption spectra of vapor-phase benzene near 3.28 μm (∼3043.82 cm⁻¹) were recorded with Doppler-limited resolution. Line intensities of the most intense absorption lines of the ν ₁₂ band near 3043.8 cm⁻¹ were determined to support development of sensitive mid-infrared trace gas detection of benzene vapor in the atmosphere. Detection of benzene vapor in air at different concentration levels has been performed for the first time using multi-pass cell enhanced direct absorption spectroscopy at ∼3.28 μm with a minimum detectable concentration of 50 ppb (1σ).     

Formation of highly organised,periodic microstructures on steel surfaces upon pulsed laser irradiation

We present results on the growth of highly organised, reproducible, periodic microstructure arrays on a stainless steel substrate using multi-pulsed Nd:YAG (wavelength of 1064 nm, pulse duration of 7 ns, repetition rate of 25 kHz, beam quality factor of M ²∼1.5) laser irradiation in standard atmospheric environment (room temperature and normal pressure) with laser spot diameter of the target being ∼50 μm. The target surface was irradiated at laser fluence of ∼2.2 J/cm² and intensity of ∼0.31×10⁹ W/cm², resulting in the controllable generation of arrays of microstructures with average periods ranging from ∼30 to ∼70 μm, depending on the hatching overlap between the consecutive scans. The received tips of the structures were either below or at the level of the original substrate surface, depending on the experimental conditions. The peculiarity of our work is on the utilised approach for scanning the laser beam over the surface. A possible mechanism for the formation of the structures is proposed.     

Formation of conical microstructures upon laser evaporation of solids

The formation and development of the large-scale periodic structures on a single crystal Si surface are studied upon its evaporation by pulsed radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The development of structures occurs at a high number of laser shots (∼10⁴) at laser fluence of 1–2 J/cm² below optical breakdown in a wide pressure range of surrounding atmosphere from 1 to 10⁵ Pa. The structures are cones with angles of 25, which grow towards the laser beam and protrude above the initial surface for 20–30 μm. It is suggested that the spatial period of the structures (10–20 μm) is determined by the capillary waves period on the molten surface. The X-ray diffractometry reveals that the modified area of the Si substrate has a polycrystalline structure and consists of Si nanoparticles with a size of 40–70 nm, depending on the pressure of surrounding gas. Similar structures are also observed on Ge and Ti. Received: 12 February 2000 / Accepted: 28 March 2000 / Published online: 20 June 2001     

Thermal analysis of InP-based quantum cascade lasers for efficient heat dissipation

We have theoretically investigated the thermal characteristics of double-channel ridge–waveguide InGaAs/InAlAs/InP quantum cascade lasers (QCLs) using a two-dimensional heat dissipation model. The temperature distribution, heat flow, and thermal conductance (G _th) of QCLs were obtained through the thermal simulation. A thick electroplated Au around the laser ridges helps to improve the heat dissipation from devices, being good enough to substitute the buried heterostructure (BH) by InP regrowth for epilayer-up bonded lasers. The effects of the device geometry (i.e., ridge width and cavity length) on the G _th of QCLs were investigated. With 5 μm thick electroplated Au, the G _th is increased with the decrease of ridge width, indicating an improvement from G _th=177 W/K⋅cm² at W=40 μm to G _th=301 W/K⋅cm² at W=9 μm for 2 mm long lasers. For the 9 μm×2 mm epilayer-down bonded laser with 5 μm thick electroplated Au, the use of InP contact layer leads to a further improvement of 13% in G _th, and it was totally raised by 45% corresponding to 436 W/K⋅cm² compared to the epilayer-up bonded laser with InGaAs contact layer. It is found that the epilayer-down bonded 9 μm wide BH laser with InP contact layer leads to the highest G _th=449 W/K⋅cm². The theoretical results were also compared with available obtained experimentally data.     

Anomalous burn-through of thin foils by high-intensity laser radiation

The paper presents results of experiments performed on the Pico facility in which foils were heated by laser radiation, and anomalously fast burn-through of foils by a structured laser beam was detected. Comparison with two-dimensional calculations has allowed us to suggest a tentative mechanism for the effect under investigation. The targets in the experiments were thin aluminum foils of thickness 3 to 40 μm. The flux density of laser radiation on the target surface varied between 10¹³ and 10¹⁴ W/cm². We detected a strong dependence of the transmitted energy on the foil thickness and the shortening of the transmitted laser pulse. Penetration of laser radiation through foils with thicknesses considerably larger than 3 μm has been observed, although it was stated in earlier publications [V. V. Ivanov, A. K. Knyazev, A. V. Kutsenko, et al., Kratk. Soobshch. Fiz. FIAN No. 7–8, 37 (1997)]; A. é. Bugrov, I. N. Burdonskii, V. V. Gol’tsov et al., Zh. éksp. Teor. Fiz. 111, 903 (1997) [JETP 84, 903 (1997)] that, at the laser radiation parameters used in our experiment, the evaporated layer of the foil could not be thicker than 2 μm. Two-dimensional calculations have allowed us to interpret this effect in terms of local “piercing” of the target at spots on the target surface where the radiation intensity has its peaks. The possibility of reducing these peaks by using a symmetrizing prepulse is discussed in the paper. Zh. éksp. Teor. Fiz. 116, 1287–1299 (October 1999)     

Depth distribution of point defects in Si bombarded by high-energy N5+ and Si5+ ions

Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N⁵⁺ (E=16 MeV) and Si⁵⁺ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×10¹⁵ cm⁻². It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. Fiz. Tverd. Tela (St. Petersburg) 40, 217–222 (February 1998)     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Large third-order nonlinear optical susceptibility of Au-Al2O3 composite films near the resonant frequency

2 O₃ composite films with high Au concentrations (30%–60% in volume fraction) were prepared by reactive co-sputtering and post rapidly thermal annealing. The structure of the films and the size distributions of the Au nanoclusters were examined by TEM, and the third-order nonlinear optical susceptibility χ⁽³⁾ was measured by degenerated four-wave mixing using a 70-ps pulse laser at 532 nm. The maximum value of the χ⁽³⁾ was about 1.2×10^-6 esu in the annealed films and occurred at around 45% Au concentration. The figure of merit, χ⁽³⁾/α (α is the absorption coefficient), has a value of 7×10^-12 esu cm over a wide range of Au concentrations. Received: 23 July 1997     

Pulsed electron-beam melting of a copper — steel 316 system: Evolution of the chemical composition,microstructure, and properties

The surface topography, chemical composition, microstructure, nanohardness, and tribological characteristics of a Cu (film, 512 nm)-stainless steel 316 (substrate) system subjected to pulsed melting by a low-energy (20–30 keV), high-current electron beam (2–3 μs, 2–10 J/cm²) were investigated. The film was deposited by sputtering a Cu target in the plasma of a microwave discharge in argon. To prevent local exfoliation of the film due to cratering, the substrate was multiply pre-irradiated with 8–10 J/cm². On single irradiation, the bulk of the film survived, and a diffusion layer containing the film and substrate components was formed at the interface. The thickness of this layer was 120–170 nm irrespective of the energy density. The diffusion layer consisted of subgrains of γ-Fe solid solution and nanosized particles of copper. In the surface layer of thickness 0.5–1 μm, which included the copper film quenched from melt and the diffusion layer, the nanohardness and the wear resistance nonmonotonicly varied with energy density, reaching, respectively, a maximum and a minimum in the range 4.3–6.3 J/cm². As the number of pulsed melting cycles was increased to five in the same energy density range, there occurred mixing of the film-substrate system and a surface layer of thickness ∼2 μm was formed which contained ∼20 at. % copper. Displacement of the excess copper during crystallization resulted in the formation of two-phase nanocrystal interlayers separating the γ-phase grains. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 6–13, December, 2005.     

Femtosecond fiber laser based methane optical clock

An optical clock based on an Er³⁺ fiber femtosecond laser and a two-mode He–Ne/CH₄ optical frequency standard (λ=3.39 μm) is realized. Difference-frequency generation is used to down convert the 1.5-μm frequency comb of the Er³⁺ femtosecond laser to the 3.4-μm range. The generated infrared comb overlaps with the He–Ne/CH₄ laser wavelength and does not depend on the carrier–envelope offset frequency of the 1.5-μm comb. In this way a direct phase-coherent connection between the optical frequency of the He–Ne/CH₄ standard and the radio frequency pulse repetition rate of the fiber laser is established. The stability of the optical clock is measured against a commercial hydrogen maser. The measured relative instability is 1×10⁻¹² at 1 s and for averaging times less than 50 s it is determined by the microwave standard, while for longer times a drift of the He–Ne/CH₄ optical standard is dominant.     

Effect of air pressure on the spatial and emission characteristics of an aluminum laser torch under subthreshold conditions of ablation

The spatial characteristic of an aluminum laser-induced plasma are studied at a laser radiation intensity of (3.8–4.8) × 10⁸ W/cm² and an air residual pressure of 6.7–133.3 Pa. It is found that the duration of the aluminum plasma glow is 50 μs and decreases with decreasing laser power output. The glow intensity reaches a maximum at t = 1.4 μs and rises with laser energy. Typical sizes of the emitting area on the laser torch are determined.     

Atomic frequency offset locking in a Λ type three-level Doppler broadened Cs system

We here present a comparative study of frequency stabilities of pump and probe lasers coupled at a frequency offset generated by coherent photon-atom interaction. Pump-probe spectroscopy of the Λ configuration in D₂ transition of cesium is carried out to obtain sub-natural (∼2 MHz) electromagnetically induced transparency (EIT) and sub-Doppler (∼10 MHz) Autler-Townes (AT) resonance. The pump laser is locked on the saturated absorption spectrum (SAS, ∼13 MHz) and the probe laser is successively stabilized on EIT and AT signals. Frequency stabilities of pump and probe lasers are calculated in terms of Allan variance σ(2,τ) by using the frequency noise power spectrum. It is found that the frequency stability of the probe stabilized on EIT is superior (σ∼2×10⁻¹³) to that of SAS locked pump laser (σ∼10⁻¹²), whereas the performance of the AT stabilized laser is inferior (σ∼6×10⁻¹²). This contrasting behavior is discussed in terms of the theme of conventional master-slave offset locking scheme and the mechanisms underlying the EIT and sub-Doppler AT resonances in a Doppler broadened atomic medium.     

Molecular Stark effect spectroscopy of diflavonol and inhomogeneous broadening of its electronic spectra in erythrocyte membranes

Using spectroscopy of the molecular Stark effect and fluorescence spectroscopy, we study the characteristics of diflavonol 3,7-dihydroxy-2,8-di(4-dimethylaminophenyl)-4H,6H-pyrano[3,2-g]chromene-4,6-dione (DFME), which demonstrates intramolecular charge and proton phototransfer. In the ground state, this dye has only one form and, in the excited state, it has two forms, i.e., normal and phototautomeric. We found that, for the normal form of DFME, the transition dipole moment that is responsible for the absorption (m _a ), the dipole moment in the equilibrium ground state (μ _g ), and the change of the dipole moment upon transition of the molecule in the excited Franck-Condon state (Δ ^a μ) are parallel. In the ground equilibrium state, the dipole moments in 1,4-dioxane and cyclohexane are equal to μg = 12.2 × 10⁻³⁰ C m and μ _g = 11.0 × 10⁻³⁰ C m, respectively. Upon excitation, they increase by Δ ^a μ = 61 × 10⁻³⁰ C m and Δ ^a μ = 50.2 × 10⁻³⁰ C m in these solvents. We study the spectral characteristics of DFME in organic solvents and erythrocyte membranes. A spectral inhomogeneity of DFME in erythrocyte ghosts is found. The inhomogeneous broadening of fluorescence spectra is manifested as a long-wavelength shift of the band of the normal form of DFME by 1640 cm⁻¹ upon excitation at the red edge of the absorption spectrum.     

Modelling of a simple Dy<Superscript>3+</Superscript> doped chalcogenide glass fibre laser for mid-infrared light generation

A simple Dy³⁺-doped chalcogenide glass fibre laser design for mid-infrared light generation is studied using a one dimensional rate equation model. The fibre laser design employs the concept of cascade lasing. The results obtained demonstrate that efficient cascade lasing may be achieved in practice without the need for fibre grating fabrication, as a sufficient level of feedback for laser action is provided by Fresnel light reflection at chalcogenide glass fibre–air interfaces. Further enhancement of the laser efficiency can be achieved by terminating one of the fibre ends with a mirror. A numerical analysis of the effect of the Dy³⁺ doping concentration and fibre loss on the laser operation shows that with 5 W of pump power, at 1.71 μm wavelength, output powers above 100 mW at ∼ 4.5 μm wavelength can be achieved with Dy³⁺ ion concentrations as low as 3 × 10¹⁹ cm⁻³, when fibre loss is of the order 1dB/m.