Dielectric properties of thin ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> films deposited by thermal evaporation

The structure, microstructure, and temperature and field dependences of the dielectric properties of thin (0.5–8.0μm) Sn₂P₂S₆ ferroelectric films deposited onto glass and aluminum foil substrates by thermal vacuum evaporation in a quasi-closed volume are studied. The film-thickness and frequency dependences of the dielectric properties and the unipolarity of the C–V characteristics are explained by the presence of near-surface Schottky-type barrier layers.     

Lithiated c-V<Subscript>2</Subscript>O<Subscript>5</Subscript> thin-film as positive electrode for rocking-chair solid-state lithium microbattery

We report for the first time the use of lithiated crystalline V₂O₅ thin films as positive electrode in all-solid-state microbatteries. Crystalline Li_xV₂O₅ films (x ≈ 0.8 and 1.5) are obtained by vacuum evaporation of metallic lithium deposited on sputtered c-V₂O₅. An all-solid-state lithium microbattery of Li_1.5V₂O₅/LiPON/Li exhibited a typical reversible capacity of 50 μAh/cm² in the potential range 3.8/2.15 V which exceeds by far the results known on all-solid-state lithium batteries using amorphous V₂O₅ films and lithiated amorphous Li_xV₂O₅ thin films as positive electrode. Hence, the present work opens the possibility of using high performance crystalline lithiated V₂O₅ thin films in rocking-chair solid-state microbatteries.     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Structural and electrical properties of pure and H<Subscript>2</Subscript>SO<Subscript>4</Subscript> doped (PVA)<Subscript>0.7</Subscript>(NaI)<Subscript>0.3</Subscript> solid polymer electrolyte

Solid polymer electrolytes (SPE) based on poly-(vinyl alcohol) (PVA)_0.7 and sodium iodide (NaI)_0.3 complexed with sulfuric acid (SA) at different concentrations were prepared using solution casting technique. The structural properties of these electrolyte films were examined by X-ray diffraction (XRD) studies. The XRD data revealed that sulfuric acid disrupt the semi-crystalline nature of (PVA)_0.7(NaI)_0.3 and convert it into an amorphous phase. The proton conductivity and impedance of the electrolyte were studied with changing sulfuric acid concentration from 0 to 5.1 mol/liter (M). The highest conductivity of (PVA)_0.7(NaI)_0.3 matrix at room temperature was 10⁻⁵ S cm⁻¹ and this increased to 10⁻³ S cm⁻¹ with doping by 5.1 M sulfuric acid. The electrical conductivity (σ) and dielectric permittivity (ε′) of the solid polymer electrolyte in frequency range (500 Hz–1 MHz) and temperature range (300–400) K were carried out. The electrolyte with the highest electrical conductivity was used in the fabrication of a sodium battery with the configuration Na/SPE/MnO₂. The fabricated cells give open circuit voltage of 3.34 V and have an internal resistance of 4.5 kΩ.     

a-Si/SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> multilayered light absorber for solar cell

40 alternate a-Si/SiN _x multilayer are incorporated as an absorber layer in a p–i–n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN _x layers. The a-Si and SiN _x layers have thickness of ~3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of ~2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current–voltage (I–V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p–i–n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V _OC). The increment of bandgap energy in PL and high V _OC of the device is attributed to the quantum confinement effect (QCE).     

Electromagnetic wave absorption properties of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> octahedral nanocrystallines in gigahertz range

Large-scale octahedral Fe₃O₄ nanocrystallines with crystalline size of 100−500 nm were synthesized by a facile solvent-thermal method for electromagnetic wave application. The Fe₃O₄ nanocrystallines showed a higher saturation magnetization (M _s ) value of 86.8 emu/g and larger coercivity (H _cj ) value of 255 Oe than that of magnetite polycrystallines because of their good crystallization and dispersion. The epoxy resin composites with 40 vol% Fe₃O₄ powders provided good electromagnetic wave absorption performance (RL < −20 dB) in the range of 2.0–4.3 GHz over the absorber thicknesses of 3.5–6.8 mm. A minimum RL value of −47 dB was observed at 3.1 GHz with a thickness of 4.8 mm.     

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO₂ films and the effects of structural and native defects of the ZrO₂ films on the electrical and dielectric properties were investigated. For preparing ZrO₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO₂(∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.     

Investigation on optical properties of Bi<Subscript>2.85</Subscript>La<Subscript>0.15</Subscript>TiNbO<Subscript>9</Subscript> thin films by prism coupling technique

Layered-perovskite ferroelectric Bi_2.85La_0.15TiNbO₉ (LBTN) optical waveguiding thin films were grown on fused silica substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) revealed that the film is highly (00l) textured. We observed sharp and distinct transverse electric (TE) and transverse magnetic (TM) multimodes and measured the refractive indices of LBTN thin films at 632.8 nm. The ordinary and extraordinary refractive indices were calculated to be n _TE=2.358 and n _TM=2.464, respectively. The film homogeneity and the film-substrate interface were analyzed using an improved version of the inverse Wentzel–Kramer–Brillouin (iWKB) method. The refractive index of the film remains constant at n ₀ within the waveguiding layer. The average transmittance of the film is 70% in the wavelength range of 400–1400 nm and the optical waveguiding properties were evaluated by the optical prism coupling method. Our results showed that the LBTN films are very good electro-optical active material.     

Magnetic and dielectric properties of Mn<Subscript>0.2</Subscript>Ni<Subscript>0.8</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanoparticles synthesized by PEG-assisted hydrothermal method

We present a systematic investigation on the structural and magnetic properties of Mn_0.2Ni_0.8Fe₂O₄ nanoparticles synthesized by a polyethylene glycol (PEG)-assisted hydrothermal route. XRD, FT-IR, TEM and VSM were used for the structural, morphological, dielectric properties and magnetic investigation of the products, respectively. Average crystallite size of product was estimated using Line profile fitting as 6 ± 1 nm and particle size as 6.5 ± 1.0 nm from TEM micrographs. Magnetization measurements have shown that the particles have a blocking temperature of 134 K. Magnetization and the coercive field of the sample increase by decreasing the temperature. The conductivity measurements reveal the semiconducting behaviour for the sample. Temperature-dependent dielectric properties: dielectric permittivity (ε) and ac conductivity (σ_ac) for the sample were studied as a function of applied frequency in the range from 1 Hz to 3 MHz. These studies indicated that the dielectric dispersion curve for the sample showed usual dielectric dispersion which can be explained on the basis of Koop’s theory, which is based on the Maxwell–Wagner model for the interfacial polarization of homogeneous double structure.     

PLD and RF-PLD synthesis of Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films for electrically controlled devices

Ba_0.6Sr_0.4TiO₃ (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with size of spherical grains up to 150 nm. The capacitance–voltage (C–V) characteristics of the BST films were performed by applying a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been measured at room temperature.     

Structure and dielectric properties of ultra-thin ZrO<Subscript>2</Subscript> films for high-<Emphasis Type="Italic">k</Emphasis> gate dielectric application prepared by pulsed laser deposition

ZrO₂ thin films have been prepared on Pt-coated silicon substrates and directly on n-Si(100) substrates by the pulsed laser deposition (PLD) technique using a ZrO₂ ceramic target under different deposition conditions. X-ray diffraction showed that the films prepared at 400 °C in 20 Pa oxygen ambient remained amorphous. Differential thermal analysis was carried out to study the crystallization behavior of ZrO₂. The dielectric constant of ZrO₂ was determined to be around 24 by measuring a Pt/ZrO₂/Pt capacitor structure. Sputtering depth profile X-ray photoelectron spectroscopy was used to investigate the interfacial characteristics of ZrO₂/n-Si stacks. A Zr silicate interfacial layer was formed between the ZrO₂ layer and the silicon substrate. The equivalent oxide thickness (EOT) and leakage current densities of the films with 6.6 nm physical thickness post-annealed in O₂ and N₂ ambient were investigated. An EOT of 1.65 nm with a leakage current of 36.2 mA/cm² at 1 V gate voltage for the film post-annealed in N₂ has been obtained. ZrO₂ thin films prepared by PLD have acceptable structure and dielectric properties required by a candidate material of high-k gate dielectrics. PACS 77.55.+f; 81.15.Fg; 73.40.Qv     

Excimer laser deposited CuO and Cu<Subscript>2</Subscript>O films with third-order optical nonlinearities by femtosecond <Emphasis Type="Italic">z</Emphasis>-scan measurement

By controlling the oxygen pressure, single-phase CuO and Cu₂O thin films have been obtained on quartz substrates using a pulsed laser deposition technique. The structure properties and linear optical absorption of the films were characterized by X-ray diffraction and UV–VIS spectroscopy. By performing z-scan measurements using a femtosecond laser (800 nm, 50 fs), the real and imaginary parts of the third-order nonlinear susceptibility, Re χ ⁽³⁾ and Im χ ⁽³⁾, of the films were determined. Both CuO and Cu₂O films exhibited large optical nonlinearities, which is comparable to those in some representative semiconductor films such as ZnO and GaN films using femtosecond laser excitation. Compared with Cu₂O films, the CuO films showed larger third-order nonlinear optical effects under off-resonance excitation. Furthermore, the mechanisms of the optical nonlinearities in CuO and Cu₂O films are explained in the main text. It was suggested that the reasons of the difference in their nonlinear refractive effects may be related to the different electronic structure in CuO and Cu₂O materials.     

Experimental and theoretical determination of the stopping power of ZrO<Subscript>2</Subscript> films for protons and <Emphasis Type="Italic">α</Emphasis>-particles

We report the results of an experimental-theoretical study on the stopping power of ZrO₂ films for swift H and He ion beams. The experiments, using the Rutherford Backscattering technique, were done for protons with incident energies in the range 200–1500 keV and for α-particle beams with energies in the range 160–3000 keV. The theoretical calculations were done in the framework of the dielectric formalism using the MELF-GOS model to account for the ZrO₂ target electronic response. It is shown that for both ion beams, the agreement between theory and experiment is quite remarkable.     

Structural characteristics of ultra-low k SiO<Subscript>2</Subscript> thin films prepared using a molecular template

Nanoporous SiO₂ thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N₂ adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH₃ bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model.     

Microwave dielectric properties of the 5.5Li<Subscript>2</Subscript>O–Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>–7TiO<Subscript>2</Subscript> ceramics

A new Li₂O–Nb₂O₅–TiO₂ (LNT) ceramic with the Li₂O:Nb₂O₅:TiO₂ mole ratio of 5.5:1:7 was prepared by solid state reaction route. The phase and structure of the ceramic were characterized by X-ray diffraction and scanning electron microscopy (SEM). The microwave dielectric properties of the ceramics were studied using a network analyzer. The microwave dielectric ceramic has low sintering temperature (∼1075°C) and good microwave dielectric properties of ε _r=42, Q×f=16900 GHz (5.75 GHz), and τ _f =63.7 ppm/°C. The addition of B₂O₃ can effectively lower the sintering temperature from 1075 to 875°C and does not induce degradation of the microwave dielectric properties. Obviously, the LNT ceramics can be applied to microwave low temperature-cofired ceramics (LTCC) devices.     

Low-temperature synthesis of Cu-doped Li<Subscript>1.2</Subscript>V<Subscript>3</Subscript>O<Subscript>8</Subscript> as cathode for reversible lithium storage

Li_{1 .2}V₃O₈ and Cu-doped Li_1.2V₃O₈ were prepared at a temperature as low as 300 °C by a sol-gel method. The structure, morphology, and electrochemical performance of the as-prepared samples were characterized by means of X-ray diffraction, scanning electron microscopy, electrochemical impedance spectroscopy, and the galvanostatic discharge–charge techniques. It is found that the Cu-doped Li_1.2V₃O₈ sample exhibits less capacity loss during repeated cycling than the undoped one. The Cu-doped Li_1.2V₃O₈ sample demonstrates the first discharge capacity of 275.9 mAh/g in the range of 3.8–1.7 V at a current rate of 30 mA/g and remains at a stable discharge capacity of 264 mAh/g within 30 cycles. Furthermore, the possible role that copper plays in enhancing the cycleability of Li_1.2V₃O₈ has also been elucidated.     

Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO<Subscript>3</Subscript> films at low temperatures

Pulsed laser deposition (PLD) of (Pb,Sr)TiO₃ (PSrT) film on Pt/SiO₂/Si at low substrate temperatures (T_s), ranging from 300–450 °C, has been investigated. As T_s increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance–electric field (C–E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C. PACS 81.15.Fg; 77.22.Ch; 68.60.Dv     

FMR and TEM Studies of Co and Ni Nanoparticles Implanted in the SiO<Subscript>2</Subscript> Matrix

Fused silica plates have been implanted with 40 keV Co⁺ or Ni⁺ ions to high doses in the range of (0.25–1.0) × 10¹⁷ ions/cm², and magnetic properties of the implanted samples have been studied with ferromagnetic resonance (FMR) technique supplemented by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. The high-dose implantation with 3d-ions results in the formation of cobalt and nickel metal nanoparticles in the irradiated subsurface layer of the SiO₂ matrix. Co and Ni nanocrystals with hexagonal close packing and face-centered cubic structures have a spherical shape and the sizes of 4–5 nm (for cobalt) and 6–14 nm (for nickel) in diameter. Room-temperature FMR signals from ensembles of Co and Ni nanoparticles implanted in the SiO₂ matrix exhibit an out-of-plane uniaxial magnetic anisotropy that is typical for thin magnetic films. The dose and temperature dependences of FMR spectra have been analyzed using the Kittel formalism, and the effective magnetization and g-factor values have been obtained for Co- and Ni-implanted samples. Nonsymmetric FMR line shapes have been fitted by a sum of two symmetrical curves. The dependences of the magnetic parameters of each curve on the implantation dose and temperature are presented.     

Effect of oxygen partial pressure and VO<Subscript>2</Subscript> content on hexagonal WO<Subscript>3</Subscript> thin films synthesized by pulsed laser deposition technique

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO₃ thin films. XRD results show the hexagonal phase of deposited WO₃ thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO₃ thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO₂ content on structural, electrochemical, and optical properties of (WO₃)_1−x (VO₂) _x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO₂–WO₃ thin film electrode with higher VO₂ content (x ≥ 0.2). Increase of VO₂ content in (WO₃)_1−x (VO₂) _x films leads to red shift in optical band gap.