Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Anisotropy of nonlinear absorption in Co<Superscript>2+</Superscript>:MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystal

Anisotropy of the nonlinear absorption of Co²⁺ ions in MgAl₂O₄ single crystal at the wavelengths of 1.35 and 1.54 μm has been experimentally demonstrated. The experimental data are analyzed in the framework of a phenomenological model when the Co²⁺ ions are described as three sets of linear dipoles oriented along the crystallographic axes. Ground-state and excited state absorption cross-sections at 1.35 and 1.54 μm are evaluated to be σ_gsa=(4.0±0.3)×10^-19, σ_esa=(3.6±0.4)×10^-20 cm² and σ_gsa=(5.1±0.3)×10^-19, σ_esa=(4.6±0.4)×10^-20 cm², respectively. PACS 42.55.Rz; 71.20.Be     

Infrared absorption spectra of pure and doped YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystals

Several weak absorption bands have been observed in the optical absorption spectra of pure and rare-earth-doped YAl₃(BO₃)₄ single crystals in the 3350– 3650 cm⁻¹ wave number region. Two of them, peaking at about 3377 cm⁻¹ and 3580 cm⁻¹ in the 8 K spectra, appear in most of the samples. They are tentatively attributed to the stretching mode of OH⁻ ions incorporated in the crystal during the growth. An additional absorption band at about 5250 cm⁻¹ at 8 K has also been detected in almost all samples. The temperature and polarization dependences of these bands, and their possible origin, are discussed.     

Nonlinear optical characterization of LaEr(MoO<Subscript>4</Subscript>)<Subscript>3</Subscript> thin films using the <Emphasis Type="BoldItalic">Z</Emphasis> -scan technique

The nonlinear optical properties of thin films of LaEr(MoO₄)₃ were studied using a ∼30 ps Nd:YAG laser at 532 nm with a repetition rate of 250 Hz. Closed aperture Z-scan measurement revealed a negative nonlinearity in the LaEr(MoO₄)₃. The nonlinear refractive index γ=1.38×10^-10 cm²/W and nonlinear absorption coefficient β=16.8×10^-6 cm/W were calculated from the Z-scan data. The fluorescent upconversion spectra were recorded with 980 nm excitation. An optical switching mechanism based on nonlinear absorption is also presented experimentally. PACS 81.15.Fg; 77.84.Bw; 33.50.Dq; 42.70.Mp     

The mechanism of dielectric relaxation and proton conductivity in an α-LiIO<Subscript>3</Subscript> nanostructure

Thermostimulated depolarization currents are studied and analyzed. As a result, a mechanism of dielectric relaxation is developed for α-LiIO₃ crystals with the interatomic distance about 0.55 nm. This mechanism is due to formation of the Н₃О⁺ and OН⁻ defects resulting from the displacement of a proton along the valence bond in water molecules and its following migration through tunneling both inside the IO₃⁻ ions and between these ions in the neighboring layers. In addition, the НIO₃ and НI₃О₈ impurities can serve as proton donors. The negative maximum of thermostimulated depolarization currents caused by false hysteresis loops due to a conductivity lag is explained. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 46–50, March, 2009.     

Dynamics of two-photon picosecond absorption in ZnWO<Subscript>4</Subscript> and PbWO<Subscript>4</Subscript> crystals

A method has been proposed to analyze the dynamics of interband two-photon absorption in a nonlinear medium excited by a sequence of picosecond laser pulses of variable intensity and continuous probe radiation. Induced absorption leading both to hysteresis in the dependence of the absorption on the intensity of laser pump radiation and to the opacity of crystals at the pump wavelength has been revealed in initially transparent ZnWO₄ and PbWO₄ crystals irradiated by a train of 523.5-nm pulses with a duration of 20 ps at pump intensities of 5 to 140 GW/cm². The kinetics of an increase in absorption and its subsequent relaxation at a 523.5-nm picosecond excitation of the crystals have been measured with continuous 633-nm probe radiation. An exponential component of the increase in absorption with the time constant τ = 2−3.5 and 8–9.5 μs depending on the direction of the linear polarization of pump radiation has been revealed at 300 K in ZnWO₄ and PbWO₄ crystals, respectively. The absorption relaxation kinetics in the crystals are complicated and approach an exponential at a late stage with the constant τ = 40−130 and 12–80 ms for the ZnWO₄ and PbWO₄ crystals, respectively.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Polarization of Luminescence in the Nanostructure Si/CaF<Subscript>2</Subscript> Upon Polarization of the Nuclear Spins of Fluorine

The laws governing polarization of luminescence in the nanostructure Si/CaF₂ upon polarization of the spins of the fluorine nuclei by means of optical excitation of charge carriers are considered theoretically. The possibility of studying experimentally the properties of nuclear spins in analyzing luminescence is shown. The polarization of luminescence is most informative in the range of excitation rates of charge carriers from 3⋅10⁷ to 3⋅ 10⁸ sec⁻¹ with the CaF₂ layer of thickness from 0.6 to 0.8 nm and optical excitation polarization degree of 0.1. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 524–529, July–August, 2005.     

Longitudinal dynamics of <Superscript>197</Superscript>Au<Superscript>32+</Superscript> and <Superscript>197</Superscript>Au<Superscript>79+</Superscript> ions in NICA injection chain

The main objective of the NICA project developed at the Joint Institute for Nuclear Research (JINR) is to conduct experimental studies with colliding heavy ion beams in an energy range of 1–4.5 GeV/nucleonucleon with luminosity on the level of 1 × 10²⁷ cm⁻² s⁻¹. In this paper the operation regime of the collider injection chain providing the bunch with experimentally desirable parameters at the output of the Nuclotron is considered for gold ions as an example.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

Kinetics of radiation-induced segregation in 12Cr-MoWSiVNbB steel after Ni<Superscript>++</Superscript> and He<Superscript>+</Superscript> ion irradiation

Ferritic-martensitic 12Cr-MoWSiVNbB (EP-823) steel was irradiated with 7 MeV Ni⁺⁺ ions within fluence interval 5 × 10¹⁸−5.4 × 10¹⁹ ions/m² and with 30 and 70 keV He⁺ ions within fluence interval 10²⁰–10²¹ ions/m² at 500°C. Results from a comparative analysis of Cr and Si radiation-induced segregation profiles near the surface are presented. Dependence of the amount of surface segregation on damage dose, displacement generation rate, and radiation-induced point defects concentration is established.     

Formation and growth of embedded indium nanoclusters by In<Superscript>2<Emphasis Type="Bold">+</Emphasis></Superscript> implantation in silica

Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In²⁺) with energy of 890 keV are implanted on silica to fluences in the range of 3×10¹⁶–3×10¹⁷ cm^-2. The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. PACS 85.40.Ry; 78.67.Bf; 73.20.Mf; 82.75.Fq     

Microstructure of Cu<Subscript>60</Subscript>Zr<Subscript>20</Subscript>Ti<Subscript>20</Subscript> bulk metallic glass rolled at different strain rates

The structural evolution of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass during rolling at different strain rates and cryogenic temperature was investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and high-resolution transmission electron microscopy (HRTEM). It is revealed that the deformation-induced transformation is strongly dependent on the strain rate. At the lowest experimental strain rate of 1.0×10⁻⁴ s⁻¹, no phase transformation occurs until the highest deformation degree reaches 95%. In a strain rate range of 5.0×10⁻⁴−5.0×10⁻² s⁻¹, phase separation occurs in a high deformation degree. As the strain rate reaches 5.0×10⁻¹ s⁻¹, phase separation and nanocrystallization concur. The critical deformation degree for occurrence of phase transformation decreases with the strain rate increasing. Supported by the National Natural Science Foundation of China (Grant No. 50471016)     

Crystal growth,spectroscopic characterization and laser performance of Nd:Lu<Subscript>0.33</Subscript>Y<Subscript>0.36</Subscript>Gd<Subscript>0.3</Subscript>VO<Subscript>4</Subscript> crystal

A new three-matrix mixed vanadate crystal Nd:Lu_0.33Y_0.36Gd_0.3VO₄ (Nd:LuYGdVO₄) crystal was grown by the Czochralski method. Room temperature absorption and fluorescence spectra of the Nd:LuYGdVO₄ crystals were measured and the spectroscopic parameters were calculated by the Judd-Ofelt theory. The intensity parameters of the Nd:LuYGdVO₄ crystal were Ω₂ = 9.736 × 10⁻²⁰ cm², Ω₄ = 4.179 × 10⁻²⁰ cm², Ω₆ = 8.020 × 10⁻²⁰ cm² and the stimulate emission cross section was 5.3 × 10⁻¹⁹ cm². Diodepumped actively Q-switched and passively Q-switched Nd:LuYGdVO₄ and Nd:Lu_0.14Y_0.86VO₄ lasers at 1.06 μm were demonstrated. The results indicate that, for both actively and passively Q-switched lasers, the Nd:LuYGdVO₄ lasers can generate shorter pulse width with higher peak power than the Nd:Lu_0.14Y_0.86VO₄ lasers at the same cavity conditions.     

Direct calculation of transition intensities in LiYF<Subscript>4</Subscript>: Nd<Superscript>3+</Superscript>

Duan’s simple model is extended to analyze the mixing of the 4f ^{N − 1}5d configuration with the 4f ^N states. The explicit static coupling and traditional dynamic coupling are considered, and the parameters are fitted according to the absorption spectrum in LiYF₄: Nd³⁺. The parameter values obtained are as follows: T ₃₂ = −28i × 10⁻⁷, T ₅₂ = −1151i × 10⁻⁷, A ₃₂² = 192i × 10⁻¹² cm, A ₅₂⁴ = i × 10⁻¹² cm, A ₇₂⁶ = 54i × 10⁻¹² cm, and A ₇₆⁶ = −680i × 10⁻¹² cm. Compared to the experimental measurements, the present model yields better results than those obtained from the Judd-Ofelt theory. The text was submitted by the authors in English.     

Optical spectra and excited state relaxation dynamics of Sm<Superscript>3+</Superscript> in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript> single crystal

Single crystals of gadolinium orthosilicate Gd₂SiO₅ containing 0.5 at% and 5 at% of Sm³⁺ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the ⁴G_5/2→⁶H_J (J=5/2–11/2) transitions of Sm³⁺ in the visible and near infrared region the ⁴G_5/2 →⁶H_7/2 one has the highest intensity with a peak emission cross section of 3.54×10⁻²¹ cm² at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd₂SiO₅:0.5 at% Sm³⁺ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the ⁴G_5/2 radiative lifetime τ _rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd₂SiO₅:5 at% Sm³⁺ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm³⁺–Sm³⁺ energy transfer C _da=1.264×10⁻⁵² cm⁶×s⁻¹.     

Optical properties of the ternary compound Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se:Co

We present the results of experimental studies of the optical properties of cobalt-doped Cd _x H_1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·10¹⁸, 5·10¹⁹, and 1·10²⁰ cm⁻³ at T = 90 K and 300 K. The composition (x = 0.18) of the Cd _x Hg_1−x Se solid solution was selected so that the hypothetical resonance level is found on the bottom of the conduction band. We show that the cobalt ions in the mercury selenide can form a resonance donor level only for cobalt concentrations N_Co < 5·10¹⁸ cm⁻³. For N_Co ∼ 5·10¹⁸ cm⁻³, the cobalt ions substitute for mercury atoms, forming a solid solution and leading to an increase in the bandgap width and a change in the physical properties. The solubility of cobalt in the HgSe lattice can be greater than 5%–10%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 73–77, January–February, 2007.     

Relaxation of the conductivity of CsI-Tl after excitation by subnanosecond electron pulses

The pulsed conductivity is investigated for a CsI-Tl crystal having a Tl⁺ concentration N=8×10¹⁷cm⁻³ and excited by an electron beam (0.2 MeV, 50 ps, 10²–10⁴ A/cm ²). It is shown that the amplitude of the conduction current pulse is almost an order of magnitude lower than for “pure” CsI crystals irradiated under like conditions. The conduction current relaxation time is preserved up to τ=100 ps in this case. Under the experimental conditions, therefore, the lifetime of electrons in the conduction band is controlled by trapping at Tl⁺ centers. The electron capture cross section at a Tl⁺ center is determined: σ=7×10⁻¹⁶ cm², which agrees in order of magnitude with estimates of the capture cross section for a neutral trapping center. Fiz. Tverd. Tela (St. Petersburg) 40, 66–67 (January 1998)