Γ to Xzelectron transfer times in type-II GaAs/AlAs superlattices due to emission of confined and interface phonons

We calculate the Γ →  X_zelectron transfer times due to the emission of confined and interface LO phonons in type-II GaAs–AlAs and AlGaAs–AlAs superlattices. A dielectric continuum model is employed to describe the electron–phonon interaction, and the electron envelope wavefunctions are obtained from a Kronig–Penney model. The calculated transfer times are in good agreement with available experimental results. We have used two different sets of AlAs X-valley effective masses obtained from different experiments and we show that the transfer times calculated with the heavier masses are in closer agreement with the measured data.     

Superconductivity in Nb2InC

In this work the Nb₂InC phase is investigated by X-ray diffraction, heat capacity, magnetic and resistivity measurements. Polycrystalline samples with Nb₂InC nominal compositions were prepared by solid state reaction. X-ray powder patterns suggest that all peaks can be indexed with the hexagonal phase of Cr₂AlC prototype. The electrical resistance as a function of temperature for Nb₂InC shows superconducting behavior below 7.5 K. The M(H) data show typical type-II superconductivity with H_C1 ～ 90 Oe at 1.8 K. The specific heat data are consistent with bulk superconductivity. The Sommerfeld constant is estimated as γ ～ 12.6 mJ mol^?1 K^?1.     

Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs1−xSbx Type-II Quantum Dots

Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs_1−xSb_x layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs_1−xSb_x layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs_1−xSb_x type-II QDs.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Reduction of thin-film ceria on Pt(111) by supported Pd nanoparticles probed with resonant photoemission

Local defects present in CeO_2 ? x films result in a mixture of Ce³⁺ and Ce⁴⁺ oxidation states. Previous studies of the Ce 3d region with XPS have shown that depositing metal nanoparticles on ceria films causes further reduction, with an increase in Ce³⁺ concentration. Here, we compare the use of XPS and resonant photoemission spectroscopy (RESPES) to estimate the concentration of Ce³⁺ and Ce⁴⁺ in CeO_2 ? x films grown on Pt (111), and the variation of this concentration as a function of Pd deposition. Due to the nature of the electronic structure of CeO_2 ? x, resonant peaks are observed for the 4d–4f transitions when the photon energy matches the resonant energy; (hν = 121.0 eV) for Ce³⁺ and (hν = 124.5 eV) for Ce⁴⁺. This results in two discrete resonant photoemission peaks in valence band spectra. The ratio of the difference of these peaks with off-resonance scans gives an indication of the relative contribution of Ce³⁺. Results from RESPES indicate reduction of CeO_2 ? x on deposition of Pd, confirming earlier findings from XPS studies.     

Thin films of molecule-based charge transfer complex cobalt tetracyanoethylene: In situ X-ray photoemission study

Thin films of molecule-based charge transfer magnet, cobalt tetracyanoethylene [Co(TCNE)_x, x ~ 2] consisting of the transition metal Co, and an organic molecule viz. tetracyanoethylene (TCNE) have been deposited by using physical vapor deposition method under ultra-high vacuum conditions at room temperature. X-ray photoelectron spectroscopy (XPS) technique has been used extensively to investigate the electronic properties of the Co(TCNE)_x thin films. The XPS measurements show that the prepared Co(TCNE)_x films are clean, and oxygen free. The stoichiometries of the films, based on atomic sensitive factors, are obtained, and yields a ~ 1:2 ratio between metal Co and TCNE for all films. Interestingly, the positive shift of binding energy position for Co(2p), and negative shifts for C(1s) and N(1s) peaks suggest a charge-transfer from Co to TCNE, and cobalt is assigned to its Co(II) valence state. In the valence band investigation, the highest occupied molecular orbital (HOMO) of Co(TCNE)_x is found to be at ~ 2.4 eV with respect to the Fermi level, and it is derived either from the TCNE^? singly occupied molecular orbital (SOMO) or Co(3d) states. The peaks located at ~ 6.8 eV and ~ 8.8 eV are due to TCNE derived electronic states. The obtained core level and valence band results of Co(TCNE)_x, films are compared with those of V(TCNE)_x thin film magnet: a well known system of M(TCNE)_x type of organic magnet, and important points regarding their electronic properties have been brought out.     

Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation

We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 μm at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600 cm^?1 exhibited superior performance with surface resistivity in excess of 10⁴ Ω cm, dark current density of 2.7 × 10^?3 A/cm², and specific detectivity improved by a factor of 5 compared to unpassivated devices (V_Bias =  ? 0.1 V, 77 K).     

Critical properties of superconducting Ba1−xKxFe2As2

Magnetisation and magneto-resistance measurements have been carried out on superconducting Ba_1?xK_xFe₂As₂ samples with x = 0.40 and 0.50. From high field magnetization hysteresis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The J_C determined from the high field data is >10⁴ A/cm² at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 T. From the variation of the T_C onset with applied field, dH_C2/dT at T_C was obtained to be ?7.708 T/K and ?5.57 T/K in the samples with x = 0.40 and 0.50.     

Enhanced ionization of perpendicularly aligned H2 in intense laser fields

Using three-dimensional classical ensembles, we have investigated the enhancement of double ionization of perpendicularly aligned H₂ molecules by a 800 nm laser pulse with intensity ranging from 1 × 10¹⁴ W/cm² to 6 × 10¹⁴ W/cm². The simulated results show that double ionization probability of H₂ strongly depends on R and reaches a maximum at an intensity independent critical distance R_C ≈ 5 a.u. Furthermore, the enhancement of double ionization is more pronounced in the cases of weaker or stronger fields. These results, a well indication of the influence of molecular structures and laser–molecule interactions on double ionization of diatomic molecules, are analyzed in detail and qualitatively explained based on the field-induced barrier suppression model and back analysis.     

Proton dynamics in Cs3(HSO4)2(HPO4) studied by 1H NMR

Proton dynamics in Cs₃(HSO₄)₂(H₂PO₄) has been studied by means of ¹H solid-state NMR as well as thermal analyses. The thermal analysis shows an endothermic peak at 408 K, which corresponds to a superprotonic transition. Above the transition temperature a mass loss is observed in a dry atmosphere, which is easily recovered in a conventional dry atmosphere below the transition temperature. The ¹H magic-angle-spinning NMR spectra at room temperature show two peaks at 13.5 and 15.8 ppm, and a shoulder at 11.3 ppm from tetramethylsilane, demonstrating a presence of several inequivalent proton sites. Translational diffusion of protons takes place in both a room-temperature phase (RT) and a high-temperature phase (HT). In both phases reorientation of the SO₄/PO₄ tetrahedron limits the rate of the proton transport. The ¹H mean residence times are estimated as E_a = 33 kJ mol^− 1 and τ₀ = 0.97 × 10^− 9 s for phase RT from the second moment analysis and as E_a = 20 kJ mol^− 1 and τ₀ = 5.0 × 10^− 12 s for phase HT from the analysis of the ¹H T₁ results.     

Thermoluminescence,photoluminescence and EPR studies on Mn2+ activated yttrium aluminate (YAlO3) perovskite

Thermoluminescence (TL) measurements were carried out on undoped and Mn²⁺ doped (0.1 mol%) yttrium aluminate (YAlO₃) nanopowders using gamma irradiation in the dose range 1–5 kGy. These phosphors have been prepared at furnace temperatures as low as 400 °C by using the combustion route. Powder X-ray diffraction confirms the orthorhombic phase. SEM micrographs show that the powders are spherical in shape, porous with fused state and the size of the particles appeared to be in the range 50–150 nm. Electron Paramagnetic Resonance (EPR) studies reveal that Mn ions occupy the yttrium site and the valency of manganese remains as Mn²⁺. The photoluminescence spectrum shows a typical orange-to-red emission at 595 nm and suggests that Mn²⁺ ions are in strong crystalline environment. It is observed that TL intensity increases with gamma dose in both undoped and Mn doped samples. Four shouldered TL peaks at 126, 240, 288 and 350 °C along with relatively resolved glow peak at 180 °C were observed in undoped sample. However, the Mn doped samples show a shouldered peak at 115 °C along with two well defined peaks at ～215 and 275 °C. It is observed that TL glow peaks were shifted in Mn doped samples. The kinetic parameters namely activation energy (E), order of kinetics (b), frequency factor (s) of undoped, and Mn doped samples were determined at different gamma doses using the Chens glow peak shape method and the results are discussed in detail.     

Conductivity and dielectric relaxation phenomena in (NH4)2SO4 single crystal

AC impedance measurements have been carried out on (NH₄)₂SO₄ single crystals for the temperatures from 300 to 473 K and frequency range between 100 Hz and 4 MHz. The results reveal two distinct relaxation processes in the sample crystal. One is the dipolar relaxation with a peak at frequency slightly higher than 4 × 10⁶ Hz. The other is the charge carrier relaxation at lower frequencies. The frequency dependence of conductivity is described by the relation σ(ω) = Bωⁿ, and n = 1.32 is obtained at temperatures below 413 K. This value drops to 0.2 and then decreases slightly with increasing temperature. The dipolar response of the (NH₄)₂SO₄ single crystal under an ac field is attributed to the reorientation of dipoles. The contribution of charge carriers is increasing substantially with increasing temperature at temperatures above 413 K. The temperature variation of conductivity relaxation peaks follows the Arrhenius relation. The obtained activation energy for migration of the mobile ions for (NH₄)₂SO₄ single crystal was 1.24 eV in the temperature range between 433 and 468 K in this intrinsic region. It is proposed that the NH₄⁺ in the sample crystal has the contribution to the electrical conduction.     

Electro-absorption modulator using a type-II quantum well in the InxGa1 − xAs/InAlAs/InP system

In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile strained (x =  0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the tensile layer and in the LM layer. This study allows us to deduce an accurate determination of the conduction band offset in the In_0.3Ga_0.7As/In_0.53Ga_0.47As/InP system. Moreover, we include the previous type-II structure between InAlAs barriers in order to confine both electrons and holes. This structure has potential applications in electro-optical modulators. We simulate its optical modulation by solving the Schrödinger equation using the envelope function approximation and calculating the absorption spectrum taking into account excitonic effects.     

Thermoluminescence,infrared reflectivity and electron paramagnetic resonance properties of hemimorphite

Silicate mineral hemimorphite has been investigated concerning its TL, IR and EPR properties. A broad TL peak around 180 °C and a weaker and narrower peak around 360 °C were found in a sample annealed at 600 °C for 1 h and then irradiated. The deconvolution using the CGCD method revealed peaks around 132, 169, 222 and 367 °C. The reflectivity measurements showed several bands in the NIR region due to H₂O, OH and Al–OH complexes. No band was observed in the visible region. The thermal treatments were carried out from ∼110 to 940 °C and dehydration was observed, first causing a diminishing optical absorption in general and the disappearance of water and hydroxyl absorption bands. The EPR spectrum of natural hemimorphite, presented Cu²⁺ signals at g = 2.4 and g = 2.1 plus E₁′ signal superposed to Fe³⁺ signal around g = 2.0.     

Effect of Li2CO3 addition on the structural,optical, ferroelectric,and electric-field-induced strain of lead-free BNKT-based ceramics

In this work, we reported the effect of Li₂CO₃ addition on the structural, optical, ferroelectric properties and electric-field-induced strain of Bi_0.5(Na,K)_0.5TiO₃ (BNKT) solid solution with CaZrO₃ ceramics. Both rhombohedral and tetragonal structures were distorted after adding Lithium (Li). The band gap values decreased from 2.91 to 2.69 eV for 5 mol% Li-addition. The maximum polarization and remanent polarization decreased from 49.66 μC/cm² to 27.11 μC/cm² and from 22.93 μC/cm² to 5.35 μC/cm² for un-doped and 5 mol% Li- addition BNKT ceramics, respectively. The maximum S_max/E_max value was 567 pm/V at 2 mol% Li₂CO₃ access. We expected this work will help to understand the role of A-site dopant in lead-free ferroelectric BNKT materials.     

High resolution emission spectroscopy of the E2Π–X2Σ+ transition of SrH and SrD

Emission spectra of SrH and SrD have been studied at high resolution using a Fourier transform spectrometer. The molecules have been produced in a high temperature furnace from the reaction of strontium metal vapor with H₂/D₂ in the presence of a slow flow of Ar gas. The spectra observed in the 18 000–19 500 cm^?1 region consist of the 0–0 and 1–1 bands of the E²Π–X²Σ⁺ transition of the two isotopologues. A rotational analysis of these bands has been obtained by combining the present measurements with previously available pure rotation and vibration–rotation measurements for the ground state, and improved spectroscopic constants have been obtained for the E²Π state. The present analysis provides spectroscopic constants for the E²Π state as ΔG(½) = 1166.1011(15) cm^?1, B_e = 3.805503(32) cm^?1, α_e = 0.098880(47) cm^?1, r_e = 2.1083727(89) Å for SrH, and ΔG(½) = 839.1283(23) cm^?1, B_e = 1.918564(15) cm^?1, α_e = 0.034719(23) cm^?1, r_e = 2.1121943(83) Å for SrD.     

Shock tube/laser absorption studies of the decomposition of methyl formate

Reaction rate coefficients for the major high-temperature methyl formate (MF, CH₃OCHO) decomposition pathways, MF → CH₃OH + CO (1), MF → CH₂O + CH₂O (2), and MF → CH₄ + CO₂ (3), were directly measured in a shock tube using laser absorption of CO (4.6 μm), CH₂O (306 nm) and CH₄ (3.4 μm). Experimental conditions ranged from 1202 to 1607 K and 1.36 to 1.72 atm, with mixtures varying in initial fuel concentration from 0.1% to 3% MF diluted in argon. The decomposition rate coefficients were determined by monitoring the formation rate of each target species immediately behind the reflected shock waves and modeling the species time-histories with a detailed kinetic mechanism [12]. The three measured rate coefficients can be well-described using two-parameter Arrhenius expressions over the temperature range in the present study: k₁ = 1.1 × 10¹³ exp(?29556/T, K) s^?1, k₂ = 2.6 × 10¹² exp(?32052/T, K) s^?1, and k₃ = 4.4 × 10¹¹ exp(?29 078/T, K) s^?1, all thought to be near their high-pressure limits. Uncertainties in the k₁, k₂ and k₃ measurements were estimated to be ±25%, ±35%, and ±40%, respectively. We believe that these are the first direct high-temperature rate measurements for MF decomposition and all are in excellent agreement with the Dooley et al. [12] mechanism. In addition, by also monitoring methanol (CH₃OH) and MF concentration histories using a tunable CO₂ gas laser operating at 9.67 and 9.23 μm, respectively, all the major oxygen-carrying molecules were quantitatively detected in the reaction system. An oxygen balance analysis during MF decomposition shows that the multi-wavelength laser absorption strategy used in this study was able to track more than 97% of the initial oxygen atoms in the fuel.     

Structural and magnetic properties of the double perovskite Sr2MnWO6

The nuclear and magnetic structure and the magnetic properties of the polycrystalline double perovskite Sr₂MnWO₆ have been studied. Rietveld analysis of neutron powder diffraction (NPD) data at T=295 K shows that the sample is tetragonal (space group P4₂/n, a=8.0119(4) Å, c=8.0141(8) Å). Some additional magnetic diffraction peaks were found in the NPD pattern at 10 K, which can be accounted for by antiferromagnetic ordering of spins at the Mn sites. The magnetic unit cell is doubled in all three unit axes directions (a=b=15.9984(8) Å, c=16.012(2) Å) and the manganese moments are coupled antiferromagnetically along the unit cell axes. The total magnetic moment of Mn²⁺ is found to be 2.27(7) μ_B. The antiferromagnetic behaviour was confirmed from magnetisation measurements. The transition from a paramagnetic to an antiferromagnetic state takes place at 13.0±0.1 K.     

Multi-species time-history measurements during high-temperature acetone and 2-butanone pyrolysis

High-temperature acetone and 2-butanone pyrolysis studies were conducted behind reflected shock waves using five species time-history measurements (ketone, CO, CH₃, CH₄ and C₂H₄). Experimental conditions covered temperatures of 1100–1600 K at 1.6 atm, for mixtures of 0.25–1.5% ketone in argon. During acetone pyrolysis, the CO concentration time-history was found to be strongly sensitive to the acetone dissociation rate constant k₁ (CH₃COCH₃ → CH₃ + CH₃CO), and this could be directly determined from the CO time-histories, yielding k₁(1.6 atm) = 2.46 × 10¹⁴ exp(?69.3 [kcal/mol]/RT) s^?1 with an uncertainty of ±25%. This rate constant is in good agreement with previous shock tube studies from Sato and Hidaka (2000) [3] and Saxena et al. (2009) [4] (within 30%) at temperatures above 1450 K, but is at least three times faster than the evaluation from Sato and Hidaka at temperatures below 1250 K. Using this revised k₁ value with the recent mechanism of Pichon et al. (2009) [5], the simulated profiles during acetone pyrolysis show excellent agreement with all five species time-history measurements. Similarly, the overall 2-butanone decomposition rate constant k_tot was inferred from measured 2-butanone time-histories, yielding k_tot(1.5 atm) = 6.08 × 10¹³ exp(?63.1 [kcal/mol]/RT) s^?1 with an uncertainty of ±35%. This rate constant is approximately 30% faster than that proposed by Serinyel et al. (2010) [11] at 1119 K, and approximately 100% faster at 1412 K. Using the measured 2-butanone and CO time-histories and an O-atom balance analysis, a missing removal pathway for methyl ketene was identified. The rate constant for the decomposition of methyl ketene was assumed to be the same as the value for the ketene decomposition reaction. Using the revised k_tot value and adding the methyl ketene decomposition reaction to the Serinyel et al. mechanism, the simulated profiles during 2-butanone pyrolysis show good agreement with the measurements for all five species.     

Exciton binding energy in a double quantum well: effect of the barrier shift

We have calculated the exciton binding energy in an Al _xGa_1 − x As  / GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton binding energy has been analysed. It has been observed that this shift induces significant changes of the exciton binding energy—even several meVs in the case of very thin barriers.