Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.     

Synthesis of β-Ga2O3 nanowires through microwave plasma chemical vapor deposition

In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga₂O₃) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H₂O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H₂O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga₂O₃ nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga₂O₃ nanowires was controlled by vapor-solid (VS) crystal growth mechanism.     

Synthesis and characterization of GaN nanowires

In this work, GaN nanowires were fabricated on Si substrates coated with NiCl₂ thin films using chemical vapor deposition (CVD) method by evaporating Ga₂O₃ powder at 1100 °C in ammonia gas flow. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum are used to characterize the samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanowires is also discussed.     

Elaboration and characterization of TiO2 nanoparticles incorporated in SiO2 host matrix

Nanometer-scale TiO₂ particles have been synthesized by sol-gel method. It was incorporated in a glass-based silica aerogel. The composite was characterized by various techniques such as particle size analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), infrared spectroscopy (IR) and photoluminescence (PL). The bulk glass presents a strong luminescence at wavelengths ranging from 750 to 950 nm. This PL was attributed to various non-bridging oxygen hole centers (NBOHCs) defects resulting from thermal treatment and crystallization of TiO₂ at the interface between titania nanoparticles and silica host matrix.     

Synthesis and characterization of Co3O4 nanorods by thermal decomposition of cobalt oxalate

Cobalt oxalate was used as a precursor to prepare Co₃O₄ nanorods by thermal decomposition. The combinations of triphenylphosphine and oleylamine were added as surfactants to control the morphology of the particles. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The diameters of Co₃O₄ nanorods are 20 nm and the average lengths are around 500 nm. The hysteresis loops of the obtained samples reveal the ferromagnetic behaviors, the enhanced coercivity (H_c) and decreased saturation magnetization (M_s) in contrast to their respective bulk materials. The study provides a simple and efficient route to synthesize Co₃O₄ nanorods at low temperature.     

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.     

A novel strategy to synthesize cobalt hydroxide and Co3O4 nanowires

Cobalt hydroxide ultra fine nanowires were prepared by a facile hydrothermal route using hydrogen peroxide. This method provides a simple, low cost, and large-scale route to produce β-cobalt hydroxide nanowires with an average diameter of 5 nm and a length of ca. 10 μm, which show a predominant well-crystalline hexagonal brucite-like phase. Their thermal decomposition produced highly uniform nanowires of cobalt oxide (Co₃O₄) under temperature 500 °C in the presence of oxygen gas. The produced cobalt oxide was characterized by X-ray diffraction, transmission electronic microscopy, and selected-area electron diffraction. The results indicated that cobalt oxide nanowires with an average diameter of 10 nm and a length of ca. 600 nm have been formed, which show a predominant well-crystalline cubic face-centered like phase.     

Synthesis and characterization of β-Ga2O3 nanorods

A novel method was applied to prepare β-Ga₂O₃ nanorods. In this method, β-Ga₂O₃ nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga₂O₃/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga₂O₃ with monoclinic structure. The β-Ga₂O₃ nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga₂O₃ nanorods is probably dominated by conventional vapor-solid (VS) mechanism.     

Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

Formation of aligned silicon-nanowire on silicon in aqueous HF/(AgNO3 + Na2S2O8) solution

Highly oriented silicon nanowire (SiNW) layer was fabricated by etching Si substrate in HF/(AgNO₃ + Na₂S₂O₈) solution at 50 °C. The morphology and the photoluminescence (PL) of the etched layer as a function of Na₂S₂O₈ concentration were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX). It was demonstrated that the morphology of the etched layers depends on the Na₂S₂O₈ concentration. Room-temperature photoluminescence (PL) from etched layer was observed. It was found that the utilisation of Na₂S₂O₈ decreases PL peak intensity. Finally, a discussion on the formation process of the silicon nanowires is presented.     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

Mesoporous TiO2-B nanowires synthesized from tetrabutyl titanate

Ultralong mesoporous TiO₂-B nanowires were synthesized via a hybrid hydrothermal-ion exchanging-thermal treatment using tetrabutyl titanate (TBOT) as a raw material. The phase transformations and porous structures of TiO₂-B nanowires were characterized and studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and N₂ adsorption-desorption measurement. Mesoporous TiO₂-B nanowires showed a length of several micrometers and diameter of about 25 nm. The porous structures of obtained TiO₂-B nanowires were demonstrated by BJH pore distribution measurement. The wirelike morphologies and porous structures of monodisperse nanowires calcined at 600 °C showed little change, which indicated that such nanowires possessed high thermal stability. The formation mechanism of TiO₂-B nanowires with mesoporous structures were also discussed based on our experimental results.     

Synthesis of nanocrystalline and mesoporous zinc sulphide from a single precursor Zn(SOCCH3)2Lut2 complex

We report the formation of mesoporous zinc sulphide, composed by the fine network of nanoparticles, which was formed via a single precursor Zn(SOCCH₃)₂Lut₂ complex. The complex was chemically synthesized using zinc carbonate basic, 3,5-lutidine and thioacetic acid, in air. The metal precursor complex was characterized using different conventional techniques. Thermogravimetric analysis (TGA) result indicates that the decomposition of the complex starts at 100 °C and continues up to 450 °C, finally yielding ZnS. ZnS nanocrystals were characterized by powder X-ray diffraction (XRD) technique, field emission scanning electron microscopy (FESEM), N₂-sorption isotherm, UV-vis spectroscopy and photoluminescence (PL) spectroscopy. The grain diameter of nanocrystals was found to be 4-5 nm. The material followed Type-IV N₂-sorption isotherm, which is the characteristic of mesoporous materials. The band gap energy, as obtained from optical measurements was around 3.8 eV.     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

Synthesis and photoluminescence of single-crystal GaN nanorods prepared by sol-gel method

A new method was applied to prepare GaN nanorods. In this method, gallium oxide (Ga₂O₃) gel was firstly formed by a sol-gel processing using gallium ethanol, Ga(OC₂H₅)₃, as a new precursor. GaN nanorods were successfully synthesized after annealing of the Ga₂O₃ gel at 1000 °C for 20 min in flowing ammonia. The as-prepared nanorods were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) displayed that the GaN nanorods were straight and smooth, with diameters ranging from 200 nm to 1.8 μm and lengths typically up to several tens of microns. When excited by 280 nm light at room temperature, the GaN nanorods had a strong ultraviolet luminescence peak located at 369 nm and a blue luminescence peak located at 462 nm, attributed to GaN band-edge emission and the existence of the defects or surface states, respectively.     

Direct synthesis of beta gallium oxide nanowires, nanobelts, nanosheets and nanograsses by microwave plasma

In this study, beta-gallium oxide (β-Ga₂O₃) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H₂O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20-30 nm were several tens of microns long and the nanobelts with thickness of about 20-30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of β-Ga₂O₃ nanostructures could easily occur directly out of liquid gallium exposed to appropriate H₂O and Ar in the gas phase. The growth process of β-Ga₂O₃ nanostructures may be dominated by VS (vapor-solid) mechanism.     

Growth of single-crystal magnetite nanowires from Fe3O4 nanoparticles in a surfactant-free hydrothermal process

Single-crystal magnetite nanowires with average diameter of ca. 20 nm and length of up to several micrometers were prepared by a simple alkaline surfactant-free hydrothermal process. The crystallinity, purity, morphology, and structural features of the as-prepared magnetite nanowires were investigated by powder X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction. The composition and length of nanowires depends on the pH, with higher pH favoring longer nanowires composed entirely of Fe₃O₄. A mechanism for nanowire growth is proposed.     

Self-assembly of Sb2O3 nanowires into microspheres: Synthesis and characterization

Sb₂O₃ nanowires with diameters of ∼233 nm and microspheres assembled by these nanowires were successfully synthesized by a simple poly-(vinylpyrrolidone) (PVP) assisted hydrothermal method. The morphologies, nano/microstructures and optical properties of the as-grown nanowires and microspheres were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-vis diffuse reflection spectrum. It has been found that the experimental parameters, such as mineralizers, played crucial roles in the morphological control of Sb₂O₃ nanowires. The possible growth mechanism of microspheres has been proposed.     

A facile and environmentally friendly chemical route for the synthesis of metastable VO2 nanobelts

Metastable VO₂ nanobelts, designated as VO₂ (B), were successfully fabricated by a facile hydrothermal route in the presence of V₂O₅ and glucose. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) techniques. The main synthesis parameters such as temperature, reaction time and molar ratio of the starting materials have been also discussed. The results showed that pure B phase VO₂ nanobelts with high crystallinity can be prepared easily at 180 °C in 24 h at the molar ratio of V₂O₅:glucose=1:1. Typically, the belt-like products were 0.6-1.2 μm long, 80-150 nm wide and 20-30 nm thick. It is noted that the whole process is free of any harmful reducing reagents and surfactants, and valuable gluconic acid can be formed as the main by-product. From an economic and environmental point of view, the present approach is particularly fit for the synthesis of VO₂ (B) nanobelts on a large scale.