Synthesis and characterization of thermoluminescent glass-ceramics Li2O-Al2O3-SiO2:CeO2

Vitroceramic powders of Li₂O-Al₂O₃-SiO₂ systems (LAS), doped with 1% (LAS:1Ce) and 10% (LAS:10Ce) molar of cerianite (CeO₂) were synthesized by means of the gelification technique of metal formates of aluminum and lithium, in the presence of tetraethoxy silane and CeO₂. The gels obtained were dried (120 °C, 2.5 h), calcined (480 °C, 5 h) and sinterized (1250 °C, 30 min). The sinterized samples were characterized by X-ray difraction (XRD), scanning electron microscopy (SEM) and microchemical analysis (EDS). There is evidence for a mixture of two phases of 64% β-spodumene (Li₂O-Al₂O₃-4SiO₂) and 36% β-eucryptite (Li₂O-Al₂O₃-2SiO₂). The LAS:1Ce system was enriched in aluminum, the LAS:10Ce system showed areas of heterogeneous composition; some regions with a shortage of CeO₂, while others zones with cerium cumulus. From the microscopy images it was found that CeO₂ acts as a densificant agent in LAS system, favoring the sintering in the host. The chemical route and the sintering processes utilized allow the production of samples exhibiting an acceptable linear correlation between total thermoluminescent emission intensity and the irradiation dose when the CeO₂ concentration is low (less than 1%), opening the possibility of using this kind of glass-ceramic in dosimetry.     

Formation of alumina-ceria mixed oxide in model systems

Interaction of aluminium with cerium oxide was studied by photoelectron spectroscopy of Al/CeO₂(1 1 1) and CeO₂/Al(1 1 1) model systems. It was found in both cases that metallic aluminium was immediately oxidized, CeO₂ was partially reduced and a mixed oxide with cerium present as Ce³⁺ was formed. The compound is probably cerium aluminate CeAlO₃ mixed with Al₂O₃ or Ce₂O₃. In both cases the intermixing was limited by the diffusion of aluminium into ceria. The excess of deposited material above this limit formed AlO_x and CeO₂ overlayers on the top of the mixed oxide + aluminate/CeO₂ and mixed oxide + aluminate/Al films, respectively.     

Effect of CeO2 buffer layer thickness on the structures and properties of YBCO coated conductors

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO₂ was deposited as a buffer layer prior to YBCO growth. CeO₂ layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scans, pole-figure, ?-scans and rocking curves of Ω angles. The significant influence of the CeO₂ thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T_c = 91 K and J_c = 5.5 × 10⁵ A/cm² were obtained on YBCO films with optimal CeO₂ thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO₂ buffer layers are discussed.     

Synthesis and photoluminescence of single-crystal GaN nanorods prepared by sol-gel method

A new method was applied to prepare GaN nanorods. In this method, gallium oxide (Ga₂O₃) gel was firstly formed by a sol-gel processing using gallium ethanol, Ga(OC₂H₅)₃, as a new precursor. GaN nanorods were successfully synthesized after annealing of the Ga₂O₃ gel at 1000 °C for 20 min in flowing ammonia. The as-prepared nanorods were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) displayed that the GaN nanorods were straight and smooth, with diameters ranging from 200 nm to 1.8 μm and lengths typically up to several tens of microns. When excited by 280 nm light at room temperature, the GaN nanorods had a strong ultraviolet luminescence peak located at 369 nm and a blue luminescence peak located at 462 nm, attributed to GaN band-edge emission and the existence of the defects or surface states, respectively.     

Preparation and characterization of SrSnO3 nanorods

Perovskite strontium stannate (SrSnO₃) nanorods were prepared by annealing the precursor SnSr(OH)₆ nanorods at 600 °C for 3 h. The precursor nanorods were hydrothermally synthesized at 160 °C for 16 h using Sr(NO₃)₂ and SnCl₄·5H₂O as starting materials in the presence of surfactant cetyltrimethyl ammonium bromide (CTAB). As-prepared samples were characterized by X-ray diffraction (XRD), thermogravimetric-differential thermal analysis (TG-DTA), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and infrared ray spectroscopy (IR). The results show that the as-synthesized powders are made of SrSnO₃ one-dimensional nanorods of about 0.2-1 μm length and 100-150 nm diameter. Possible formation mechanism of SrSnO₃ with nanorod structure under certain conditions was preliminarily analyzed, in which it was thought that CTAB played an important role in the formation process of the nanorod structure. Electrochemical performance of the samples versus Li metal was also evaluated for possible use in lithium-ion batteries.     

Polishing behavior of PS/CeO2 hybrid microspheres with controlled shell thickness on silicon dioxide CMP

Organic-inorganic composite microspheres with PS as a core and CeO₂ nanoparticles as a shell were synthesized by in situ decomposition reaction of Ce(NO₃)₃ on the surfaces of PS microspheres prepared through soap-free emulsion polymerization. The shell thickness of the composite microspheres could be turned by varying the concentration of Ce(NO₃)₃ in the reaction solution. The whole process required neither surface treatment for PS microspheres nor additional surfactant or stabilizer. The as-synthesized PS/CeO₂ composite microsphere samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and thermogravimetric analysis (TGA). Oxide chemical mechanical polishing (CMP) performance of the PS/CeO₂ composite abrasives with different shell thickness was characterized by atomic force microscopy (AFM). The results indicated that the as-prepared core-shell structured composite microspheres (220-260 nm in diameter) possessed thin shell (10-30 nm) composed of CeO₂ nanoparticles (particle diameter of 5-10 nm), and the final CeO₂ contents of the composite microspheres ranged from 10 to 50 wt%. A possible mechanism for the formation of PS/CeO₂ composite microspheres was discussed also. The CMP test results confirmed that the novel core-shell structured composite abrasives are useful to improve oxide CMP performance. In addition, there is an obvious effect of shell thickness of the composite abrasives on oxide CMP performance.     

Sr2CeO4:Eu and Sr2CeO4:5 mol% Eu, 3 mol% Dy microphosphors: Wet chemistry synthesis from hybrid precursor and photoluminescence properties

In this article, Sr₂CeO₄:x mol% Eu³⁺ and Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors were synthesized from assembling hybrid precursors by wet chemical method. As-prepared samples present uniform grain-like morphology and the particle size is about 0.2 μm. The luminescence spectra of Sr₂CeO₄:x mol% Eu³⁺ have been measured to examine the influence of the intensity of red emission lines for Eu³⁺ on the concentration of Eu³⁺, showing that the intensity of the red emission increases with an increase of the concentration from 1 to 5 mol%. Additionally, from the emission spectra of Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors, the characteristic lines of Dy³⁺ have also been observed. This result indicates that there also exists an energy transfer process between Sr₂CeO₄ and Dy³⁺.     

Preparation and characterization of cerium oxide doped TiO2 nanoparticles

A mixed oxide consisting of TiO₂ as the major phase and CeO_2−y (0<y<0.5) as the dopant phase was prepared via the sol-gel reaction of Ti(i-OC₃H₇)₃ in an aqueous solution of Ce(NO₃)₃. The resulting oxide powders with different CeO_2−y contents were all composed of nano-sized spheres. The CeO_2−y phase was identified to have retarding effect on the phase transition from anatase TiO₂ to rutile TiO₂ at calcinations temperature as high as 800 °C, which would otherwise be a thorough conversion. The CeO_2−y-TiO₂ powders could apparently shift the UV-absorption band of TiO₂ toward visible range, and there was an optimal CeO_2−y content in association with the maximum absorbance. This effect is interpreted as the existence of an n-type impurity band, due to the substitution of Ti⁴⁺ for Ce^3+/4+ at the interface between the two oxides, in the gap of TiO₂. According to X-ray photoelectron spectroscopy (XPS) investigation, the Ti element mainly existed as the chemical state of Ti⁴⁺ and the Ce oxide doping did not affect the peak position of Ti 2p. The Ce 3d spectrum of CeO_2−y-doped TiO₂ sample basically denotes a mixture of Ce^3+/4+ oxidation states giving rise to a myriad of peaks.     

Luminescent and morphological study of Sr2CeO4 blue phosphor prepared from oxalate precursors

Luminescent and morphological studies of Sr₂CeO₄ blue phosphor prepared from cerium-doped strontium oxalate precursor are reported. Powder samples were prepared from 5 and 25 mol% Ce³⁺-doped strontium oxalate as well as from a mechanical mixture of strontium oxalate and cerium oxalate at a 4:1 ratio, respectively. All the samples were characterized by XRD, IR, PLS, and SEM. The luminescent and structural properties of the Sr₂CeO₄ material are little affected by the SrCO₃ remaining from precursors. The Sr₂CeO₄ material consists in one-dimensional chains of edge-sharing CeO₆ octahedra that are linked together by Sr²⁺ ions. The carbonate ion might be associated with oxygen ions of the linear chain, and also with the oxygen atoms located in the equatorial position, which consequently affects the charge transfer bands between O²⁻ and Ce⁴⁺. As observed by SEM, the morphological changes are related to each kind of precursor and thermal treatment, along with irregular powder particles within the size range 0.5-2 μm.     

Synthesis and characterization of nanocrystalline cerium oxide powders by two-stage non-isothermal precipitation

Nanocrystalline CeO₂ particles were firstly prepared by two-stage non-isothermal precipitation, i.e. precipitating at 70 °C and aging at another temperature. Experimental results showed that the intermediates at the end of precipitation stage were needle-like mixtures of Ce³⁺-Ce⁴⁺ compounds. The subsequent aging temperature played an important role on the shape and size of final products. As the aging temperature suddenly reduced to 0 °C, the resultant particles retained their original needle-like structure via the topotactic mechanism, which cannot be obtained by isothermal precipitation. As raising the aging temperature above 50 °C, the products were hexagonal and grown up with increasing temperature via the dissolution-recrystallization mechanism. Moreover, all products were cubic-fluorite structured CeO₂ with negligible Ce³⁺ content. As compared to the nanohexagons (aged at 90 °C), the nanoneedles (aged at 0 °C) exhibited an unordinary red shift in the UV absorption and possessed a smaller bandgap energy.     

Reactivity and XAFS study on (1−x)CeO2-xNiO (x=0.025-0.3) system in the two-step water-splitting reaction for solar H2 production

The redox reaction of Ce⁴⁺-Ce³⁺ promoted by the catalytic function of nickel ions in a (1−x)CeO₂-xNiO solid solution was investigated for solar H₂ production by the two-step water-splitting reaction. By irradiation using an infrared imaging lamp as a solar simulator, the O₂-releasing reaction with (1−x)CeO₂-xNiO solid solution proceeded at 1673-1873 K, and its reduced form was produced. The amounts of H₂ gas evolved by the reduced form were 1.2-2.5 cm³/g and the evolved gases amounts ratio of H₂/O₂ was nearly 2, which is equal to the stoichiometric value of the water-splitting reaction (H₂O=H₂+1/2O₂). The maximum amounts of evolved H₂ and O₂ gases were obtained at the Ce:Ni mole ratio of 0.95:0.05 (x=0.05) in the (1−x)CeO₂-xNiO system. The X-ray absorption fine structure (XAFS) measurement showed that the O₂-releasing and H₂-generation reactions with (1−x)CeO₂-xNiO solid solution were repeatable with the redox system of Ce⁴⁺-Ce³⁺, which was enhanced by the catalytic function of Ni²⁺-Ni⁰.     

Synthesis process and the luminescence properties of rare earth doped NaLa(WO4)2 nanoparticles

Rare earth doped NaLa(WO₄)₂ nanoparticles have been prepared by a simply hydrothermal synthesis procedure. The X-ray diffraction (XRD) pattern shows that the Eu³⁺-doped NaLa(WO₄)₂ nanoparticles with an average size of 10-30 nm can be obtained via hydrothermal treatment for different time at 180 °C. The luminescence intensity of Eu³⁺-doped NaLa(WO₄)₂ nanoparticles depended on the size of the nanoparticles. The bright upconversion luminescence of the 2 mol% Er³⁺ and 20 mol% Yb³⁺ codoped NaLa(WO₄)₂ nanoparticles under 980 nm excitation could also be observed. The Yb³⁺-Er³⁺ codoped NaLa(WO₄)₂ nanoparticles prepared by the hydrothermal treatment at 180 °C and then heated at 600 °C shows a 20 times stronger upconversion luminescence than those prepared by hydrothermal treatment at 180 °C or by hydrothermal treatment at 180 °C and then heated at 400 °C.     

Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

CeO₂ films were prepared on LaMnO₃/MgO/Gd₂Zr₂O₇ multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P_L) from 46 to 101 W. Epitaxial (1 0 0) CeO₂ films were prepared at P_L = 46-93 W (deposition temperature, T_dep = 705-792 K). Epitaxial CeO₂ films had rectangular-shaped grains at P_L = 46-77 W (T_dep = 705-754 K), while square-shaped grains were obtained at P_L = 85-93 W (T_dep = 769-792 K). CeO₂ films showed a columnar microstructure. Epitaxial (1 0 0) CeO₂ films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and ?-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO₂ films had a maximum of 4.6 μm h⁻¹ at P_L = 77 W (T_dep = 754 K).     

Growth of ultra-thin cerium oxide layers on Cu(1 1 1)

The reactive vacuum deposition of CeO₂ on Cu(1 1 1) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. We find that Ce oxide on the Cu(1 1 1) grows initially in the form of islands giving sharp hexagonal LEED pattern of the CeO₂(1 1 1) structure corresponding to the (1.5 × 1.5) structure. The CeO₂-Cu(1 1 1) films exhibited mixed valence states and temperature dependent CeO₂-Ce₂O₃ transition above 900 K due to the vacuum annealing. The transition progressed more rapidly at the surface, probably by formation of oxygen vacancies.     

Direct conversion of a metal organic compound to epitaxial Sb-doped SnO2 film on a (0 0 1) TiO2 substrate using a KrF laser, and its resulting electrical properties

Epitaxial Sb-doped SnO₂ (0 0 1) thin film on a TiO₂ (0 0 1) substrate was successfully prepared by laser-assisted metal organic deposition at room temperature. The effects of the precursor thin film and laser fluence on the resistivity, carrier concentration, and mobility of the Sb-doped SnO₂ film were investigated. The resistivity of the Sb-doped SnO₂ film prepared by direct irradiation to metal organic film is one order of magnitude lower than that of film prepared by irradiation to amorphous Sb-doped SnO₂ film. From an analysis of Hall measurements, the difference between the resistivity of the Sb-doped SnO₂ film prepared using the metal organic precursor film and that of amorphous precursor film appears to be caused by the mobility. Direct conversion of the metal organic compound by excimer laser irradiation was found to be effective for preparing epitaxial Sb-doped SnO₂ film with low resistivity.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Long-length IBAD-MgO buffer layers for high performance RE-123 coated conductors by a large ion beam source

In Fujikura, a large-scale ion-beam-assisted deposition (IBAD) system with a large ion source has been employed to fabricate biaxially textured MgO films. The large-scale IBAD system has multiple deposition lanes where substrate tapes move, and therefore we have to optimize experimental conditions at each lane. We selected an appropriate deposition area and, finally, we successfully fabricated a 1 km-length IBAD-MgO film at a production rate of 1 km/h. We also studied pulsed-laser-deposited (PLD) CeO₂ films directly on the IBAD-MgO films in spite of a large lattice mismatch between CeO₂ and MgO. From transmission electron microscope (TEM) observations at an interface between MgO and CeO₂ films, it is revealed that there is domain-matching-epitaxy relationship between MgO and CeO₂ films. We also fabricated thin (1.0 μm) and thick (3.7 μm) PLD – GdBa₂Cu₃O_7−x (GdBCO) film on the long-length CeO₂/MgO substrate (over 150 m). Critical currents (I_c) and current density (J_c) were over 300 A and 3 MA/cm² respectively for the thin GdBCO film and were about 645 A and 1.7 MA/cm² for the thick GdBCO film at 77 K in self-field.     

The surface properties and the activities in catalytic wet air oxidation over CeO2-TiO2 catalysts

No-noble metal CeO₂-TiO₂ catalysts prepared by sol-gel method were developed and examined for catalytic wet air oxidation (CWAO) of acetic acid. The structure of the catalysts was measured by BET, SEM, XRD, XPS and DTA-TG. We investigated the effect of the interactions of Ce and Ti on the structure of CeO₂-TiO₂ catalysts. The mechanisms of the relationships between the different content of Ti and the activity of CeO₂-TiO₂ catalysts were discussed. The results showed that the average crystal size of CeO₂ decreased and the surface areas increased; the low valence of Ce³⁺ increase, and the chemisorbed oxygen slightly decreased with the increase of Ti content on the surface of CeO₂-TiO₂ catalysts. The order of the activity in CWAO of acetic acid followed: Ce/Ti 1/1 > Ce/Ti 3/1 > Ce/Ti 1/3 > Ce/Ti 5/1 > CeO₂ > TiO₂ > no catalyst. In CWAO of acetic acid, the optimal atomic ratio of Ce and Ti was 1, and the highest COD removal was over 64% at 230 °C, 5 MPa and 180 min reaction time over Ce/Ti 1/1 catalyst. The excellent activity and stability of CeO₂-TiO₂ catalysts was observed in our study.     

Selective MOCVD of titanium oxide and zirconium oxide thin films using single molecular precursors on Si(1 0 0) substrates

Titanium oxide (TiO₂) and zirconium oxide (ZrO₂) thin films have been deposited on modified Si(1 0 0) substrates selectively by metal-organic chemical vapor deposition (MOCVD) method using new single molecular precursor of [M(OⁱPr)₂(tbaoac)₂] (M=Ti, Zr; tbaoac=tertiarybutyl-acetoacetate). For changing the characteristic of the Si(1 0 0) surface, micro-contact printing (μCP) method was adapted to make self-assembled monolayers (SAMs) using an octadecyltrichlorosilane (OTS) organic molecule which has -CH₃ terminal group. The single molecular precursors were prepared using metal (Ti, Zr) isopropoxide and tert-butylacetoacetate (tbaoacH) by modifying standard synthetic procedures. Selective depositions of TiO₂ and ZrO₂ were achieved in a home-built horizontal MOCVD reactor in the temperature range of 300-500 °C and deposition pressure of 1×10⁻³-3×10⁻² Torr. N₂ gas (5 sccm) was used as a carrier gas during film depositions. TiO₂ and ZrO₂ thin films were able to deposit on the hydrophilic area selectively. The difference in surface characteristics (hydrophobic/hydrophilic) between the OTS SAMs area and the SiO₂ or Si-OH layer on the Si(1 0 0) substrate led to the site-selectivity of oxide thin film growth.     

Characterization of Pd-CeOx interaction on α-Al2O3 support

The Pd-Ce interaction was studied over CeO₂ (0.3-2.5 wt.%)-Pd (1 wt.%)/α-Al₂O₃ catalysts used in the reforming reaction of CH₄ with CO₂. The samples were characterized by using high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS). The activity and selectivity behavior was in good agreement with that of other supported metal catalysts (Ni and Pd) modified with different promoters. The preliminary results of HRTEM would indicate that the CeO_x forms small crystallites around the Pd particle. The XPS analysis for the regions of Ce 3d and Pd 3d, gives an account of Ce being present mostly as Ce³⁺ and a high binding energy for Pd 3d_5/2 (335.3 eV), an evidence of Pd-Ce chemical interaction. The Pd/Al XPS intensity ratios vs. the Pd average particle size, determined by TEM, show an excellent correlation for fresh and used catalyst. These results indicate that the diminution of the Pd/Al ratios was due to Pd sintering. Consequently, the small amounts of CeO_x species do not cover the Pd particle, in agreement with the HRTEM results. The overall results stand for the promoter action mechanism of the CeO_x for the reforming reaction with CO₂.